Laser-induced forward transfer (LIFT) of water soluble polyvinyl alcohol (PVA) polymers for use as support material for 3D-printed structures

The additive microfabrication method of laser-induced forward transfer (LIFT) permits the creation of functional microstructures with feature sizes down to below a micrometre [1]. Compared to other additive manufacturing techniques, LIFT can be used to deposit a broad range of materials in a contactless fashion. LIFT features the possibility of building out of plane features, but is currently limited to 2D or 2½D structures [2–4]. That is because printing of 3D structures requires sophisticated printing strategies, such as mechanical support structures and post-processing, as the material to be printed is in the liquid phase. Therefore, we propose the use of water-soluble materials as a support (and sacrificial) material, which can be easily removed after printing, by submerging the printed structure in water, without exposing the sample to more aggressive solvents or sintering treatments. Here, we present studies on LIFT printing of polyvinyl alcohol (PVA) polymer thin films via a picosecond pulsed laser source. Glass carriers are coated with a solution of PVA (donor) and brought into proximity to a receiver substrate (glass, silicon) once dried. Focussing of a laser pulse with a beam radius of 2 µm at the interface of carrier and donor leads to the ejection of a small volume of PVA that is being deposited on a receiver substrate. The effect of laser pulse fluence , donor film thickness and receiver material on the morphology (shape and size) of the deposits are studied. Adhesion of the deposits on the receiver is verified via deposition on various receiver materials and via a tape test. The solubility of PVA after laser irradiation is confirmed via dissolution in de-ionised water. In our study, the feasibility of the concept of printing PVA with the help of LIFT is demonstrated. The transfer process maintains the ability of water solubility of the deposits allowing the use as support material in LIFT printing of complex 3D structures. Future studies will investigate the compatibility (i.e. adhesion) of PVA with relevant donor materials, such as metals and functional polymers. References: [1] A. Piqué and P. Serra (2018) Laser Printing of Functional Materials. Weinheim, Germany: Wiley-VCH Verlag GmbH & Co. KGaA. [2] R. C. Y. Auyeung, H. Kim, A. J. Birnbaum, M. Zalalutdinov, S. A. Mathews, and A. Piqué (2009) Laser decal transfer of freestanding microcantilevers and microbridges, Appl. Phys. A, vol. 97, no. 3, pp. 513–519. [3] C. W. Visser, R. Pohl, C. Sun, G.-W. Römer, B. Huis in ‘t Veld, and D. Lohse (2015) Toward 3D Printing of Pure Metals by Laser-Induced Forward Transfer, Adv. Mater., vol. 27, no. 27, pp. 4087–4092. [4] J. Luo et al. (2017) Printing Functional 3D Microdevices by Laser-Induced Forward Transfer, Small, vol. 13, no. 9, p. 1602553

Integration of Bulk Piezoelectric Materials into Microsystems.

Bulk piezoelectric ceramics, compared to deposited piezoelectric thin-films, provide greater electromechanical coupling and charge capacity, which are highly desirable in many MEMS applications. In this thesis, a technology platform is developed for wafer-level integration of bulk piezoelectric substrates on silicon, with a final film thickness of 5-100μm. The characterized processes include reliable low-temperature (200˚C) AuIn diffusion bonding and parylene bonding of bulk-PZT on silicon, wafer-level lapping of bulk-PZT with high-uniformity (±0.5μm), and low-damage micro-machining of PZT films via dicing-saw patterning, laser ablation, and wet-etching. Preservation of ferroelectric and piezoelectric properties is confirmed with hysteresis and piezo-response measurements. The introduced technology offers higher material quality and unique advantages in fabrication flexibility over existing piezoelectric film deposition methods. In order to confirm the preserved bulk properties in the final film, diaphragm and cantilever beam actuators operating in the transverse-mode are designed, fabricated and tested. The diaphragm structure and electrode shapes/sizes are optimized for maximum deflection through finite-element simulations. During tests of fabricated devices, greater than 12μmPP displacement is obtained by actuation of a 1mm2 diaphragm at 111kHz with <7mW power consumption. The close match between test data and simulation results suggests that the piezoelectric properties of bulk-PZT5A are mostly preserved without any necessity of repolarization. Three generations of resonant vibration energy harvesters are designed, simulated and fabricated to demonstrate the competitive performance of the new fabrication process over traditional piezoelectric deposition systems. An unpackaged PZT/Si unimorph harvester with 27mm3 active device volume produces up to 205μW at 1.5g/154Hz. The prototypes have achieved the highest figure-of-merits (normalized-power-density × bandwidth) amongst previously reported inertial energy harvesters. The fabricated energy harvester is utilized to create an autonomous energy generation platform in 0.3cm3 by system-level integration of a 50-80% efficient power management IC, which incorporates a supply-independent bias circuitry, an active diode for low-dropout rectification, a bias-flip system for higher efficiency, and a trickle battery charger. The overall system does not require a pre-charged battery, and has power consumption of <1μW in active-mode (measured) and <5pA in sleep-mode (simulated). Under 1g vibration at 155Hz, a 70mF ultra-capacitor is charged from 0V to 1.85V in 50 minutes.Ph.D.Electrical EngineeringUniversity of Michigan, Horace H. Rackham School of Graduate Studieshttp://deepblue.lib.umich.edu/bitstream/2027.42/91479/1/aktakka_3.pdfhttp://deepblue.lib.umich.edu/bitstream/2027.42/91479/2/aktakka_2.pdfhttp://deepblue.lib.umich.edu/bitstream/2027.42/91479/3/aktakka_1.pd

New Trends and Applications in Femtosecond Laser Micromachining

This book contains the scientific contributions to the Special Issue entitled: "New Trends and Applications in Femtosecond Laser Micromachining". It covers an array of subjects, from the basics of femtosecond laser micromachining to specific applications in a broad spectra of fields such biology, photonics and medicine

Light-assisted domain engineering, waveguide fabrication and microstructuring of lithium niobate

The thesis is focussing on the interaction of lithium niobate with UV and ultrafast laser radiation to achieve 1) ferroelectric domain inversion, 2) waveguide fabrication, and 3) surface microstructuring. Preferential ferroelectric domain inversion has been demonstrated by 'latent light-assisted poling' and 'inhibition of poling' using ultrafast laser irradiation at 400 nm and CW highly absorbed UV radiation (305..244 nm) respectively. The characteristics of the resultant domains have been experimentally investigated as a function of the fabrication conditions and a theoretical model have been proposed to explain the experimental observations. UV radiation in the 305 nm to 244 nm range have been used for the fabrication of optical waveguides in lithium niobate. The waveguiding characteristics and electro-optic response of the UV written optical channel waveguides have been investigated experimentally. Inhibition of poling and post processing has been used for the fabrication of ridge waveguide structures with enhanced refractive index change. Finally, a method for the fabrication of ultra-smooth lithium niobate single crystal photonic microstructures has been proposed. The method is based on surface tension reshaping of surface microstructures which are produced by preferential poling and subsequent etching. Whispering gallery mode resonators have been fabricated and characterised here

High coupling materials for thin film bulk acoustic wave resonators

Radio frequency (RF) filters based on bulk acoustic wave resonances in piezoelectric thin films have become indispensable components in mobile communications. The currently used material, AlN, exhibits many excellent properties for this purpose. However, its bandwidth is often a limiting factor. In addition, no tuning is possible with AlN. Ferroelectrics would offer both larger coupling to achieve larger bandwidths, and tunability. However, their acoustic properties are not well known, especially in the thin film case. The goal of this thesis is to investigate the potential and identify the limitations of ferroelectric thin films for thickness mode resonators in the 0.5 - 2 GHz range. The Pb(Zrx,Ti1-x)O3 (PZT) solid solution system is the main candidate, since it is known for its large piezoelectric constants and its growth is already well studied. As a main test vehicle, free standing thin film bulk acoustic resonator (TFBAR) structures with Pt/PZT/Pt/SiO2 membranes were successfully fabricated using silicon micro-machining techniques. The main drawback of ferroelectrics is the damping of acoustic waves by domain wall motion both in the RF electric field and in the pressure wave. For this reason films with varying orientations and compositions were investigated. From the device structures the electro-mechanical coupling constants kt2, the quality factors (Q-factors) and several materials parameters have been obtained. High coupling constants have been found for sol-gel Pb(Zr0.53,Ti0.47)O3 films with a {100} texture, kt2 is found to be 0.4 for a 1 µm thick film and 0.8 for a 3.8 µm thick film. However, the Q-factors of these films are low, 18 for the first film and 3 for the second film. The increase of kt2 and the decrease of the Q-factor with frequency indicates that the domains present in these films contribute to these characteristic parameters. It was generally observed that high coupling constant are associated to low Q-factors. This became evident when comparing films with 53/47 composition, where both tetragonal and rhombohedral phases are present, to tetragonal films as well as when comparing {100} textures with (111) textures. Both for the 53/47 composition and for the {100} texture, ferroelastic domain walls are thought to play a bigger role than for tetragonal compositions and (111) textures. The highest figure of merit (FOM) of about 15 was found when combining the composition leading to a high coupling constant (53/47) and the orientation leading to lower losses (111). However the losses even in this film are too high for RF-filter applications. On the other hand, films with low Q-factors but high coupling could prove very useful as transducers for ultrasonic imaging applications, where low Q-factors are desired. The stiffness coefficients of the studied PZT films were shown to be higher than expected from ceramics data. Most likely the stiffness of ceramics always contains domain contributions leading to softening. In contrast, in textured films the variety of domain orientation is very much reduced. In order to reduce losses due the presence of ferroelastic domains three different potential solutions were explored. The first idea was to manipulate the domain populations of the films deposited on silicon by using heat and vacuum treatments. Silicon substrates are known from previous works to be unfavourable for high c-domain fractions. It was discovered that an anneal in vacuum at 550 °C lead to a significant reduction of c-domains in tetragonal 30/70 PZT ({100}). On the contrary, if the sample was subjected to a compressive stress during cooling, the c-domain fraction could be increased. Analysis of the film stress versus temperature curves revealed a trend consistent with theoretical predictions, i.e. a phase boundary between the c/a/c/a and the a1/a2/a1/a2 domain patterns between room temperature and the Curie temperature θC. However, even though this method reveals interesting results, it can not be exploited as a method to achieve a sufficient c-domain population. The second idea explored was the implementation of a high thermal expansion material as a substrate. PZT films deposited on MgO are known to be compressive due to the difference in thermal expansion of the two materials. The compressive stress leads to highly c-axis oriented PZT films. Devices using MgO substrates were fabricated, however difficulties in the micro-machining of the MgO substrate inhibited a complete liberation of the membrane. Nevertheless, preliminary measurements indicate these devices could lead to both high coupling and high Q-factors, suggesting that further detailed study of this method is worthwhile. As a third method for avoiding ferroelastic domains, the uniaxial ferroelectric potassium lithium niobate (KLN) was explored. The unique ferroelectric axis in this material means that only 180° domain walls are present, which can theoretically be removed by poling. This material has been deposited in thin film form using pulsed laser deposition (PLD). KLN thin films with a {001} texture were deposited successfully on Pt/Si substrates. The films were piezoelectric with a d33,f value of around 10 pm/V and a dielectric constant of 250. This is the first time that piezoelectric properties were measured on KLN thin films. A columnar structure has been observed, however the small grain size and the rough surface currently make it difficult to apply this material to TFBAR's