The impact of transistor aging on the reliability of level shifters in nano-scale CMOS technology

On-chip level shifters are the interface between parts of an Integrated Circuit (IC) that operate in different voltage levels. For this reason, they are indispensable blocks in Multi-Vdd System-on-Chips (SoCs). In this paper, we present a comprehensive analysis of the effects of Bias Temperature Instability (BTI) aging on the delay and the power consumption of level shifters. We evaluate the standard High-to-Low/Low-to-High level shifters, as well as several recently proposed level-shifter designs, implemented using a 32 nm CMOS technology. Through SPICE simulations, we demonstrate that the delay degradation due to BTI aging varies for each level shifter design: it is 83.3% on average and it exceeds 200% after 5 years of operation for the standard Low-to-High and the NDLSs level shifters, which is 10 × higher than the BTI-induced delay degradation of standard CMOS logic cells. Similarly, we show that the examined designs can suffer from an average 38.2% additional power consumption after 5 years of operation that, however, reaches 180% for the standard level-shifter and exceeds 163% for the NDLSs design. The high susceptibility of these designs to BTI is attributed to their differential signaling structure, combined with the very low supply voltage. Moreover, we show that recently proposed level-up shifter design employing a voltage step-down technique are

Yield-driven power-delay-optimal CMOS full-adder design complying with automotive product specifications of PVT variations and NBTI degradations

We present the detailed results of the application of mathematical optimization algorithms to transistor sizing in a full-adder cell design, to obtain the maximum expected fabrication yield. The approach takes into account all the fabrication process parameter variations specified in an industrial PDK, in addition to operating condition range and NBTI aging. The final design solutions present transistor sizing, which depart from intuitive transistor sizing criteria and show dramatic yield improvements, which have been verified by Monte Carlo SPICE analysis

Cross-Layer Resiliency Modeling and Optimization: A Device to Circuit Approach

The never ending demand for higher performance and lower power consumption pushes the VLSI industry to further scale the technology down. However, further downscaling of technology at nano-scale leads to major challenges. Reduced reliability is one of them, arising from multiple sources e.g. runtime variations, process variation, and transient errors. The objective of this thesis is to tackle unreliability with a cross layer approach from device up to circuit level

Age-Acknowledging Reliable Multiplier Design with Adaptive Hold Logic

Digital multipliers are among the most critical arithmetic functional units. The overall performance of these systems depends on the throughput of the multiplier. Meanwhile, the negative bias temperature instability effect occurs when a pMOS transistor is under negative bias (Vgs = −Vdd), increasing the threshold voltage of the pMOS transistor, and reducing multiplier speed. A similar phenomenon, positive bias temperature instability, occurs when an nMOS transistor is under positive bias. Both effects degrade transistor speed, and in the long term, the system may fail due to timing violations. Therefore, it is important to design reliable high performance multipliers. In this paper, we propose an aging-aware multiplier design with novel adaptive hold logic (AHL) circuit. The multiplier is able to provide higher throughput through the variable latency and can adjust the AHL circuit to mitigate performance degradation that is due to the aging effect. Moreover, the proposed architecture can be applied to a column- or row-bypassing multiplier. The experimental results show that our proposed architecture with 16 ×16 and 32 ×32 column-bypassing multipliers can attain up to 62.88% and 76.28% performance improvement, respectively, compared with 16×16 and 32×32 fixed-latency column-bypassing multipliers. Furthermore, our proposed architecture with 16 × 16 and 32 × 32 row-bypassing multipliers can achieve up to 80.17% and 69.40% performance improvement as compared with 16×16 and 32 × 32 fixed-latency row-bypassing multipliers

Scheduled voltage scaling for increasing lifetime in the presence of NBTI

to an error at the time of submission and it was against the policy of the conference to later add him to the author list. Abstract — Negative Bias Temperature Instability (NBTI) is a leading reliability concern for integrated circuits (ICs). It gradually increases the threshold voltages of PMOS transistors, thereby increasing delay. We propose scheduled voltage scaling, a technique that gradually increases the operating voltage of the IC to compensate for NBTI-related performance degradation. Scheduled voltage scaling has the potential to increase IC lifetime by 46 % relative to the conventional approach using guard banding for ICs fabricated using a 45 nm process. I

Minimization of NBTI performance degradation using internal node control

Abstract—Negative Bias Temperature Instability (NBTI) is a significant reliability concern for nanoscale CMOS circuits. Its effects on circuit timing can be especially pronounced for circuits with standby-mode equipped functional units because these units can be subjected to static NBTI stress for extended periods of time. This paper proposes internal node control, in which the inputs to individual gates are directly manipulated to prevent this static NBTI fatigue. We give a mixed integer linear program formulation for an optimal solution to this problem. The optimal placement of internal node control yields an average 26.7 % reduction in NBTI-induced delay over a ten year period for the ISCAS85 benchmarks. We find that the problem is NP-complete and present a linear-time heuristic that can be used to quickly find near-optimal solutions. The heuristic solutions are, on average, within 0.17 % of optimal and all were within 0.60% of optimal. I

DESIGN OF AN EFFICIENT GETTING OLDER-AWARE NONTOXIC MULTIPLIER

An identical phenomenon, positive bias temperature instability, happens when an nMOS transistor is under positive bias. Both effects degrade transistor speed, as well as in the lengthy term, the machine may fail because of timing violations. Digital multipliers are some of the most important arithmetic functional models. The general performance of those systems is dependent around the throughput from the multiplier. Meanwhile, the negative bias temperature instability effect happens whenever a pMOS transistor is under negative bias, growing the brink current from the pMOS transistor, and reducing multiplier speed. Therefore, you should design reliable high-performance multipliers. Within this paper, we advise a maturing-aware multiplier design having a novel adaptive hold logic circuit. The multiplier has the capacity to provide greater throughput with the variable latency and may adjust the AHL circuit to mitigate performance degradation that is a result of the maturing effect. Furthermore, the suggested architecture does apply to some column- or row-bypassing multiplier. The throughput of those programs is dependent on multipliers, and when the multipliers are extremely slow, the performance of entire circuits will disappear