11 research outputs found

    Piin läpivientien luotettavuus ja elinikä termisessä rasituksessa

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    Through-silicon via (TSV) is one of the key technologies for three-dimensional (3D) integrated circuits (ICs). TSVs enable vertical electrical connections between components which greatly reduces interconnection lengths. Regardless of all the promise the technique has shown, there are still major obstacles surrounding reliability and the cost of fabrication of the TSV structure. The first part of the thesis is a literature survey that focuses on different failure mechanisms of TSVs. In addition, different fabrication and design choices of TSVs are presented with the focus being on their effect on reliability. The experimental part of the thesis presents reliability and lifetime assessment of tapered partially copper-filled blind TSVs under thermal cycling. The reliability test was carried out with nine samples. Six of them had 420 vias and three of them had 1400 vias in a daisy chain structure. Finite element method (FEM) was used to predict the critical failure locations of the TSV structure. Lifetime was predicted by Weibull analysis. The cross-sections of the test samples were prepared by molding, mechanical grinding and polishing and analyzed by scanning electron microscope (SEM). Electrical measurements showed almost constant resistance increase in the samples before failures were noticed. The first failed sample was noticed after 200 cycles and the last at 4000 cycles. Lifetime of TSVs under thermal cycling was proven to be acceptable with used failure criterion. According to Weibull analysis, about 10 % of the samples with 420 vias will break after 1000 cycles. Sample preparation for imaging was deemed sufficient although the grinding caused artifacts. The simulation results were compared with SEM micrographs. The images showed that the failures were located at the maximum stress areas, identified with FEM simulations, at the bottom of the via. From the SEM images, it was deduced that the defects initiated from the fabrication process and propagated due to maximum localized stress.Piin läpivienti -rakenteet ovat keskeisessä osassa kolmiulotteisten integroitujen piirien kehityksessä. Piin läpiviennit mahdollistavat komponenttien vertikaalin yhdistämisen toisiinsa, mikä lyhentää huomattavasti niiden välistä etäisyyttä. Kaikista hyvistä puolista huolimatta tekniikalla on vielä haasteita edessään. Niistä suurimmat liittyvät rakenteen luotettavuuteen ja valmistuskustannuksiin. Diplomityön kirjallisessa osuudessa keskitytään piin läpivientien erilaisiin vauriomekanismeihin. Sen lisäksi tutkitaan valmistus- ja suunnitteluratkaisujen vaikutusta läpivientien luotettavuuteen. Kokeellisen osan tarkoituksena on osittain kuparitäytettyjen kaventuvien piin läpivientien luotettavuuden ja eliniän määrittäminen termisessä syklaustestissä. Luotettavuustestaus suoritettiin yhdeksällä näytteellä, joista kuudessa oli 420 läpivientiä ja kolmessa 1400 läpivientiä ketjurakenteessa. Elementtimallintamisen avulla määritettiin kriittiset vauriokohdat läpivientirakenteessa ja elinikä määritettiin Weibull-analyysillä. Näytteiden poikkileikkauksien valmistamiseen käytettiin muovaamista, mekaanista hiomista ja kiillotusta ja analysointi suoritettiin pyyhkäisyelektronimikroskoopilla. Näytteiden resistanssi nousi tasaisesti ennen rikkoutumisten havaitsemista. Ensimmäinen rikkoutuminen huomattiin 200 syklin jälkeen ja viimeinen 4000 syklin kohdalla. Näytteiden luotettavuus osoittautui hyväksi käytetyillä kriteereillä. Weibull-analyysin mukaan 10 % 420 läpiviennin näytteistä rikkoutuu 1000 syklin jälkeen. Karkea arvio voidaan tehdä, että satunnainen läpivienti rikkoutuu 0,024 % todennäköisyydellä 1000 syklin jälkeen. Pyyhkäisyelektronimikroskoopin kuvien perusteella havaittiin, että näytteet rikkoutuivat maksimaalisen rasituksen alueella läpivientien alaosassa. Kuvien perusteella päädyttiin johtopäätökseen, että näytteiden rikkoutumisen aiheuttivat virheet, jotka ovat peräisin valmistusprosessista ja jotka etenivät rakenteessa termisen rasituksen vaikutuksesta

    Placement for fast and reliable through-silicon-via (TSV) based 3D-IC layouts

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    The objective of this research is to explore the feasibility of addressing the major performance and reliability problems or issues, such as wirelength, stress-induced carrier mobility variation, temperature, and quality trade-offs, found in three-dimensional integrated circuits (3D ICs) that use through-silicon vias (TSVs) at placement stage. Four main works that support this goal are included. In the first work, wirelength of TSV-based 3D ICs is the main focus. In the second work, stress-induced carrier mobility variation in TSV-based 3D ICs is examined. In the third work, temperature inside TSV-based 3D ICs is investigated. In the final work, the quality trade-offs of TSV-based 3D-IC designs are explored. In the first work, a force-directed, 3D, and gate-level placement algorithm that efficiently handles TSVs is developed. The experiments based on synthesized benchmarks indicate that the developed algorithm helps generate GDSII layouts of 3D-IC designs that are optimized in terms of wirelength. In addition, the impact of TSVs on other physical aspects of 3D-IC designs is also studied by analyzing the GDSII layouts. In the second work, the model for carrier mobility variation caused by TSV and STI stresses is developed as well as the timing analysis flow considering the stresses. The impact of TSV and STI stresses on carrier mobility variation and performance of 3D ICs is studied. Furthermore, a TSV-stress-driven, force-directed, and 3D placement algorithm is developed. It exploits carrier mobility variation, caused by stress around TSVs after fabrication, to improve the timing and area objectives during placement. In addition, the impact of keep-out zone (KOZ) around TSVs on stress, carrier mobility variation, area, wirelength, and performance of 3D ICs is studied. In the third work, two temperature-aware global placement algorithms are developed. They exploit die-to-die thermal coupling in 3D ICs to improve temperature during placement. In addition, a framework used to evaluate the results from temperature-aware global placements is developed. The main component of the framework is a GDSII-level thermal analysis that considers all structures inside a TSV-based 3D IC while computing temperature. The developed placers are compared with several state-of-the-art placers published in recent literature. The experimental results indicate that the developed algorithms help improve the temperature of 3D ICs effectively. In the final work, three block-level design styles for TSV-based die-to-wafer bonded 3D ICs are discussed. Several 3D-IC layouts in the three styles are manually designed. The main difference among these layouts is the position of TSVs. Finally, the area, wirelength, timing, power, temperature, and mechanical stress of all layouts are compared to explore the trade-offs of layout quality.PhDCommittee Chair: Lim, Sung Kyu; Committee Member: Bakir, Muhannad; Committee Member: Kim, Hyesoon; Committee Member: Mukhopadhyay, Saibal; Committee Member: Swaminathan, Madhava

    Heurísticas bioinspiradas para el problema de Floorplanning 3D térmico de dispositivos MPSoCs

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    Tesis inédita de la Universidad Complutense de Madrid, Facultad de Informática, Departamento de Arquitectura de Computadores y Automática, leída el 20-06-2013Depto. de Arquitectura de Computadores y AutomáticaFac. de InformáticaTRUEunpu

    Multiphysics modeling and simulation for large-scale integrated circuits

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    This dissertation is a process of seeking solutions to two important and challenging problems related to the design of modern integrated circuits (ICs): the ever increasing couplings among the multiphysics and the large problem size arising from the escalating complexity of the designs. A multiphysics-based computer-aided design methodology is proposed and realized to address multiple aspects of a design simultaneously, which include electromagnetics, heat transfer, fluid dynamics, and structure mechanics. The multiphysics simulation is based on the finite element method for its unmatched capabilities in handling complicate geometries and material properties. The capability of the multiphysics simulation is demonstrated through its applications in a variety of important problems, including the static and dynamic IR-drop analyses of power distribution networks, the thermal-ware high-frequency characterization of through-silicon-via structures, the full-wave electromagnetic analysis of high-power RF/microwave circuits, the modeling and analysis of three-dimensional ICs with integrated microchannel cooling, the characterization of micro- and nanoscale electrical-mechanical systems, and the modeling of decoupling capacitor derating in the power integrity simulations. To perform the large-scale analysis in a highly efficient manner, a domain decomposition scheme, parallel computing, and an adaptive time-stepping scheme are incorporated into the proposed multiphysics simulation. Significant reduction in computation time is achieved through the two numerical schemes and the parallel computing with multiple processors

    Integrating specification and test requirements as constraints in verification strategies for 2D and 3D analog and mixed signal designs

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    Analog and Mixed Signal (AMS) designs are essential components of today’s modern Integrated Circuits (ICs) used in the interface between real world signals and the digital world. They present, however, significant verification challenges. Out-of-specification failures in these systems have steadily increased, and have reached record highs in recent years. Increasing design complexity, incomplete/wrong specifications (responsible for 47% of all non functional ICs) as well as additional challenges faced when testing these systems are obvious reasons. A particular example is the escalating impact of realistic test conditions with respect to physical (interface between the device under test (DUT) and the test instruments, input-signal conditions, input impedance, etc.), functional (noise, jitter) and environmental (temperature) constraints. Unfortunately, the impact of such constraints could result in a significant loss of performance and design failure even if the design itself was flawless. Current industrial verification methodologies, each addressing specific verification challenges, have been shown to be useful for detecting and eliminating design failures. Nevertheless, decreases in first pass silicon success rates illustrate the lack of cohesive, efficient techniques to allow a predictable verification process that leads to the highest possible confidence in the correctness of AMS designs. In this PhD thesis, we propose a constraint-driven verification methodology for monitoring specifications of AMS designs. The methodology is based on the early insertion of test(s) associated with each design specification. It exploits specific constraints introduced by these planned tests as well as by the specifications themselves, as they are extracted and used during the verification process, thus reducing the risk of costly errors caused by incomplete, ambiguous or missing details in the specification documents. To fully analyze the impact of these constraints on the overall AMS design behavior, we developed a two-phase algorithm that automatically integrates them into the AMS design behavioral model and performs the specifications monitoring in a Matlab simulation environment. The effectiveness of this methodology is demonstrated for two-dimensional (2D) and three-dimensional (3D) ICs. Our results show that our approach can predict out-of-specification failures, corner cases that were not covered using previous verification methodologies. On one hand, we show that specifications satisfied without specification and test-related constraints have failed in the presence of these additional constraints. On the other hand, we show that some specifications may degrade or even cannot be verified without adding specific specification and test-related constraints

    Physical parameter-aware Networks-on-Chip design

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    PhD ThesisNetworks-on-Chip (NoCs) have been proposed as a scalable, reliable and power-efficient communication fabric for chip multiprocessors (CMPs) and multiprocessor systems-on-chip (MPSoCs). NoCs determine both the performance and the reliability of such systems, with a significant power demand that is expected to increase due to developments in both technology and architecture. In terms of architecture, an important trend in many-core systems architecture is to increase the number of cores on a chip while reducing their individual complexity. This trend increases communication power relative to computation power. Moreover, technology-wise, power-hungry wires are dominating logic as power consumers as technology scales down. For these reasons, the design of future very large scale integration (VLSI) systems is moving from being computation-centric to communication-centric. On the other hand, chip’s physical parameters integrity, especially power and thermal integrity, is crucial for reliable VLSI systems. However, guaranteeing this integrity is becoming increasingly difficult with the higher scale of integration due to increased power density and operating frequencies that result in continuously increasing temperature and voltage drops in the chip. This is a challenge that may prevent further shrinking of devices. Thus, tackling the challenge of power and thermal integrity of future many-core systems at only one level of abstraction, the chip and package design for example, is no longer sufficient to ensure the integrity of physical parameters. New designtime and run-time strategies may need to work together at different levels of abstraction, such as package, application, network, to provide the required physical parameter integrity for these large systems. This necessitates strategies that work at the level of the on-chip network with its rising power budget. This thesis proposes models, techniques and architectures to improve power and thermal integrity of Network-on-Chip (NoC)-based many-core systems. The thesis is composed of two major parts: i) minimization and modelling of power supply variations to improve power integrity; and ii) dynamic thermal adaptation to improve thermal integrity. This thesis makes four major contributions. The first is a computational model of on-chip power supply variations in NoCs. The proposed model embeds a power delivery model, an NoC activity simulator and a power model. The model is verified with SPICE simulation and employed to analyse power supply variations in synthetic and real NoC workloads. Novel observations regarding power supply noise correlation with different traffic patterns and routing algorithms are found. The second is a new application mapping strategy aiming vii to minimize power supply noise in NoCs. This is achieved by defining a new metric, switching activity density, and employing a force-based objective function that results in minimizing switching density. Significant reductions in power supply noise (PSN) are achieved with a low energy penalty. This reduction in PSN also results in a better link timing accuracy. The third contribution is a new dynamic thermal-adaptive routing strategy to effectively diffuse heat from the NoC-based threedimensional (3D) CMPs, using a dynamic programming (DP)-based distributed control architecture. Moreover, a new approach for efficient extension of two-dimensional (2D) partially-adaptive routing algorithms to 3D is presented. This approach improves three-dimensional networkon- chip (3D NoC) routing adaptivity while ensuring deadlock-freeness. Finally, the proposed thermal-adaptive routing is implemented in field-programmable gate array (FPGA), and implementation challenges, for both thermal sensing and the dynamic control architecture are addressed. The proposed routing implementation is evaluated in terms of both functionality and performance. The methodologies and architectures proposed in this thesis open a new direction for improving the power and thermal integrity of future NoC-based 2D and 3D many-core architectures
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