Drift-diffusion model for spin-polarized transport in a non-degenerate 2DEG controlled by a spin-orbit interaction

We apply the Wigner function formalism to derive drift-diffusion transport equations for spin-polarized electrons in a III-V semiconductor single quantum well. Electron spin dynamics is controlled by the linear in momentum spin-orbit interaction. In a studied transport regime an electron momentum scattering rate is appreciably faster than spin dynamics. A set of transport equations is defined in terms of a particle density, spin density, and respective fluxes. The developed model allows studying of coherent dynamics of a non-equilibrium spin polarization. As an example, we consider a stationary transport regime for a heterostructure grown along the (0, 0, 1) crystallographic direction. Due to the interplay of the Rashba and Dresselhaus spin-orbit terms spin dynamics strongly depends on a transport direction. The model is consistent with results of pulse-probe measurement of spin coherence in strained semiconductor layers. It can be useful for studying properties of spin-polarized transport and modeling of spintronic devices operating in the diffusive transport regime.Comment: 16 pages, 3 figure

Spintronics: Fundamentals and applications

Spintronics, or spin electronics, involves the study of active control and manipulation of spin degrees of freedom in solid-state systems. This article reviews the current status of this subject, including both recent advances and well-established results. The primary focus is on the basic physical principles underlying the generation of carrier spin polarization, spin dynamics, and spin-polarized transport in semiconductors and metals. Spin transport differs from charge transport in that spin is a nonconserved quantity in solids due to spin-orbit and hyperfine coupling. The authors discuss in detail spin decoherence mechanisms in metals and semiconductors. Various theories of spin injection and spin-polarized transport are applied to hybrid structures relevant to spin-based devices and fundamental studies of materials properties. Experimental work is reviewed with the emphasis on projected applications, in which external electric and magnetic fields and illumination by light will be used to control spin and charge dynamics to create new functionalities not feasible or ineffective with conventional electronics.Comment: invited review, 36 figures, 900+ references; minor stylistic changes from the published versio

Spin Electronics and Spin Computation

We review several proposed spintronic devices that can provide new functionality or improve available functions of electronic devices. In particular, we discuss a high mobility field effect spin transistor, an all-metal spin transistor, and our recent proposal of an all-semiconductor spin transistor and a spin battery. We also address some key issues in spin-polarized transport, which are relevant to the feasibility and operation of hybrid semiconductor devices. Finally, we discuss a more radical aspect of spintronic research--the spin-based quantum computation and quantum information processing.Comment: 17 pages, 3 figure

Monte Carlo Modeling of Spin FETs Controlled by Spin-Orbit Interaction

A method for Monte Carlo simulation of 2D spin-polarized electron transport in III-V semiconductor heterojunction FETs is presented. In the simulation, the dynamics of the electrons in coordinate and momentum space is treated semiclassically. The density matrix description of the spin is incorporated in the Monte Carlo method to account for the spin polarization dynamics. The spin-orbit interaction in the spin FET leads to both coherent evolution and dephasing of the electron spin polarization. Spin-independent scattering mechanisms, including optical phonons, acoustic phonons and ionized impurities, are implemented in the simulation. The electric field is determined self-consistently from the charge distribution resulting from the electron motion. Description of the Monte Carlo scheme is given and simulation results are reported for temperatures in the range 77-300 K.Comment: 18 pages, 7 figure

Modeling for Semiconductor Spintronics

We summarize semiclassical modeling methods, including drift-diffusion, kinetic transport equation and Monte Carlo simulation approaches, utilized in studies of spin dynamics and transport in semiconductor structures. As a review of the work by our group, several examples of applications of these modeling techniques are presented.Comment: 31 pages, 9 figure

Theory of spin-polarized bipolar transport in magnetic p-n junctions

The interplay between spin and charge transport in electrically and magnetically inhomogeneous semiconductor systems is investigated theoretically. In particular, the theory of spin-polarized bipolar transport in magnetic p-n junctions is formulated, generalizing the classic Shockley model. The theory assumes that in the depletion layer the nonequilibrium chemical potentials of spin up and spin down carriers are constant and carrier recombination and spin relaxation are inhibited. Under the general conditions of an applied bias and externally injected (source) spin, the model formulates analytically carrier and spin transport in magnetic p-n junctions at low bias. The evaluation of the carrier and spin densities at the depletion layer establishes the necessary boundary conditions for solving the diffusive transport equations in the bulk regions separately, thus greatly simplifying the problem. The carrier and spin density and current profiles in the bulk regions are calculated and the I-V characteristics of the junction are obtained. It is demonstrated that spin injection through the depletion layer of a magnetic p-n junction is not possible unless nonequilibrium spin accumulates in the bulk regions--either by external spin injection or by the application of a large bias. Implications of the theory for majority spin injection across the depletion layer, minority spin pumping and spin amplification, giant magnetoresistance, spin-voltaic effect, biasing electrode spin injection, and magnetic drift in the bulk regions are discussed in details, and illustrated using the example of a GaAs based magnetic p-n junction.Comment: 36 pages, 11 figures, 2 table