MMIC technology for advanced space communications systems

The current NASA program for 20 and 30 GHz monolithic microwave integrated circuit (MMIC) technology is reviewed. The advantages of MMIC are discussed. Millimeter wavelength MMIC applications and technology for communications systems are discussed. Passive and active MMIC compatible components for millimeter wavelength applications are investigated. The cost of a millimeter wavelength MMIC's is projected

High Dynamic-Range and Very Low Noise K-Band p-HEMT LNA MMIC for LMDS and Satellite Communication

An excellent noise figure and high linearity, K-band p-HEMT LNA MMIC, that incorporates single-bias configuration and negative feedback circuit, has be en developed for LMDS (Local Multi-point Distribution Service) and satellite communication. The third order intercept point (IP3) of this MMIC is 20 dBm, while output power at 1-dB gain compression is 8.5 dBm. The IP3 and noise figure is 19.5 +/- 1 dBm and 1.8 +/- 0.2 dB, respectively, at frequencies between 24 and 32 GHz. The die size of the MMIC is 1.9 mm. This MMIC shows a potential reliable application in high-speed wireless access system

A design concept for an MMIC microstrip phased array

A conceptual design for a microstrip phased array with monolithic microwave integrated circuit (MMIC) amplitude and phase controls is described. The MMIC devices used are 20 GHz variable power amplifiers and variable phase shifters recently developed by NASA contractors for applications in future Ka band advanced satellite communication antenna systems. The proposed design concept is for a general NxN element array of rectangular lattice geometry. Subarray excitation is incorporated in the MMIC phased array design to reduce the complexity of the beam forming network and the number of MMIC components required. The proposed design concept takes into consideration the RF characteristics and actual phyical dimensions of the MMIC devices. Also, solutions to spatial constraints and interconnections associated with currently available packaging designs are discussed. Finally, the design of the microstrip radiating elements and their radiation characteristics are examined

Characterization of MMIC devices for active array antennas

Certain aspects of monolithic microwave integrated circuit (MMIC) interconnectivity were investigated. Considerations that lead to preserving the inherently reproducible characteristics of the MMIC are proposed. It is shown that at radio frequencies (RF) greater than 20 GHz, the transition from the MMIC device to other transmission media must be an accurate RF match. It is proposed that the RF match is sufficiently critical to include the transition as part of the delivered MMIC package. The model to analyze several transitions is presented. This model consists of a succession of abrupt discontinuities in printed circuit transmission lines. The analysis of these discontinuities is achieved by the Spectral Galerkin technique, to establish the modes and mode matching, to generate the generalized S parameters of the individual discontinuities. Preliminary results achieved with this method are presented. It is concluded that special effects should be coordinated by the active array antenna industry toward standardization of MMIC packaging and characterization

Multifunction MMIC For Miniaturized Solid State Switch Matrix

This paper describes a new multifunction MMIC expressly designed for a reconfiguration matrix equipment.This MMIC has been developed using a standard PHEMT process and includes two switches,a totally switchable-off amplifier and a temperature compensation circuit.The complete circuit has also been designed to interface a standard CMOS control level. Performed simulations and obtained results demonstrate the effectiveness of this approach in reaching compactness and reliability of satellite equipment

Cryogenic MMIC low noise amplifiers

Monolithic (MMIC) and discrete transistor (MIC) low noise amplifiers are compared on the basis of performance, cost, and reliability. The need for cryogenic LNA’s for future large microwave arrays for radio astronomy is briefly discussed and data is presented on a prototype LNA for the 1 to 10 GHz range along with a very wideband LNA for the 1 to 60 GHz range. A table of MMIC LNA and mixer designs under development for the frequencies up to 210 GHz is reported and data on cryogenic amplifiers in the 85 to 115 GHz is reviewed. The current status of the topics of transconductance fluctuations and cryogenic noise modeling will be briefly summarized

Correlation between the reliability of HEMT devices and that of a combined oscillator-amplifier

We evaluate an oscillator-amplifier MMIC submitted to high-temperature operating life time tests. To relate adequately these results with individual components’ results, it is important to realise that failure mechanisms in non-linear MMICs are governed by the maximally instantaneous voltages/currents and hence that comparisons should be conducted at equal instantaneous conditions

125 - 211 GHz low noise MMIC amplifier design for radio astronomy

To achieve the low noise and wide bandwidth required for millimeter wavelength astronomy applications, superconductor-insulator-superconductor (SIS) mixer based receiver systems have typically been used. This paper investigates the performance of high electron mobility transistor (HEMT) based low noise amplifiers (LNAs) as an alternative approach for systems operating in the 125 — 211 GHz frequency range. A four-stage, common-source, unconditionally stable monolithic microwave integrated circuit (MMIC) design is presented using the state-of-the-art 35 nm indium phosphide HEMT process from Northrop Grumman Corporation. The simulated MMIC achieves noise temperature (T_e) lower than 58 K across the operational bandwidth, with average T_e of 38.8 K (corresponding to less than 5 times the quantum limit (hf/k) at 170 GHz) and forward transmission of 20.5 ± 0.85 dB. Input and output reflection coefficients are better than -6 and -12 dB, respectively, across the desired bandwidth. To the authors knowledge, no LNA currently operates across the entirety of this frequency range. Successful fabrication and implementation of this LNA would challenge the dominance SIS mixers have on sub-THz receivers

Integrated Circuits Based on 300 GHz fT Metamorphic HEMT Technology for Millimeter-Wave and Mixed-Signal Applications

Advanced circuits based on metamorphic HEMT (MHEMT)technologies on 4 ”GaAs substrates for both millimeter-wave,and mixed- signal applications are presented.Extrinsic cut-off frequencies of ft =293 GHz and fmax =337 GHz were achieved for a 70 nm gate length metamorphic HEMT echnology.The MMIC process obtains high yield on transistor and circuit level.Single-stage low-noise amplifiers demonstrate a small signal gain of 13 dB and a noise figure of 2.8 dB at 94 GHz.An amplifier MMIC developed for D-Band operation features a gain of 15 dB at 160 GHz.The achieved results are comparable to state- of-the-art InP-based HEMT technologies.In order to realize 80 Gbit/s digital circuits,a process with 100 nm gate length enhancement type HEMTs with a transit frequency of 200 GHz is used.Three metalization layers are available for interconnects.The parasitic capacitance of the interconnects is kept low by using BCB and plated air bridge technology.Based on this process,static and dynamic frequency dividers achieve a maximu toggle frequency of 70 GHz and 108 GHz,respectively