18 research outputs found

    Semiconductor Nanowires for Thermoelectric Applications

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    Ph.DDOCTOR OF PHILOSOPH

    Improving processor efficiency through thermal modeling and runtime management of hybrid cooling strategies

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    One of the main challenges in building future high performance systems is the ability to maintain safe on-chip temperatures in presence of high power densities. Handling such high power densities necessitates novel cooling solutions that are significantly more efficient than their existing counterparts. A number of advanced cooling methods have been proposed to address the temperature problem in processors. However, tradeoffs exist between performance, cost, and efficiency of those cooling methods, and these tradeoffs depend on the target system properties. Hence, a single cooling solution satisfying optimum conditions for any arbitrary system does not exist. This thesis claims that in order to reach exascale computing, a dramatic improvement in energy efficiency is needed, and achieving this improvement requires a temperature-centric co-design of the cooling and computing subsystems. Such co-design requires detailed system-level thermal modeling, design-time optimization, and runtime management techniques that are aware of the underlying processor architecture and application requirements. To this end, this thesis first proposes compact thermal modeling methods to characterize the complex thermal behavior of cutting-edge cooling solutions, mainly Phase Change Material (PCM)-based cooling, liquid cooling, and thermoelectric cooling (TEC), as well as hybrid designs involving a combination of these. The proposed models are modular and they enable fast and accurate exploration of a large design space. Comparisons against multi-physics simulations and measurements on testbeds validate the accuracy of our models (resulting in less than 1C error on average) and demonstrate significant reductions in simulation time (up to four orders of magnitude shorter simulation times). This thesis then introduces temperature-aware optimization techniques to maximize energy efficiency of a given system as a whole (including computing and cooling energy). The proposed optimization techniques approach the temperature problem from various angles, tackling major sources of inefficiency. One important angle is to understand the application power and performance characteristics and to design management techniques to match them. For workloads that require short bursts of intense parallel computation, we propose using PCM-based cooling in cooperation with a novel Adaptive Sprinting technique. By tracking the PCM state and incorporating this information during runtime decisions, Adaptive Sprinting utilizes the PCM heat storage capability more efficiently, achieving 29\% performance improvement compared to existing sprinting policies. In addition to the application characteristics, high heterogeneity in on-chip heat distribution is an important factor affecting efficiency. Hot spots occur on different locations of the chip with varying intensities; thus, designing a uniform cooling solution to handle worst-case hot spots significantly reduces the cooling efficiency. The hybrid cooling techniques proposed as part of this thesis address this issue by combining the strengths of different cooling methods and localizing the cooling effort over hot spots. Specifically, the thesis introduces LoCool, a cooling system optimizer that minimizes cooling power under temperature constraints for hybrid-cooled systems using TECs and liquid cooling. Finally, the scope of this work is not limited to existing advanced cooling solutions, but it also extends to emerging technologies and their potential benefits and tradeoffs. One such technology is integrated flow cell array, where fuel cells are pumped through microchannels, providing both cooling and on-chip power generation. This thesis explores a broad range of design parameters including maximum chip temperature, leakage power, and generated power for flow cell arrays in order to maximize the benefits of integrating this technology with computing systems. Through thermal modeling and runtime management techniques, and by exploring the design space of emerging cooling solutions, this thesis provides significant improvements in processor energy efficiency.2018-07-09T00:00:00

    High-density thermoelectric power generation and nanoscale thermal metrology

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    Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2007.Includes bibliographical references (p. 299-305).Thermoelectric power generation has been around for over 50 years but has seen very little large scale implementation due to the inherently low efficiencies and powers available from known materials. Recent material advances appear to have improved the technology's prospects. In this work we show that significantly increased generated power densities are possible even for established material technologies provided that parasitic losses are controlled and effective strategies are found for handling the large resulting heat fluxes. We optimize the performance of a thermoelectric generator in this regime, and discuss fundamental performance limits in this context. We present a design of a thermoelectric generator using conventional material and a microchannel heat sink that we predict can generate many times the power of a conventional thermoelectric, at a comparable efficiency. A high temperature vacuum test station is used to characterize the power generation, efficiency, and material properties of thermoelectric materials and generators. The results of a series of studies on various bulk and thin-film materials are presented, as well as packaged generator performance. The method of CCD thermoreflectance imaging is pursued in this thesis as a quantitative means for making noncontact temperature measurements on solid-state samples at the micro- and nano-scale. We develop and test a theory of the instrument and the measurement process to rigorously characterize the accuracy and precision of the resulting thermal images. We experimentally demonstrate sub-micron spatial resolution and sub-20 mK temperature resolution with this tool. High-resolution thermal images of thermoelectric elements, polysilicon-gate field effect transistors, and other integrated electronic devices are presented.by Peter M. Mayer.Ph.D

    2020 NASA Technology Taxonomy

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    This document is an update (new photos used) of the PDF version of the 2020 NASA Technology Taxonomy that will be available to download on the OCT Public Website. The updated 2020 NASA Technology Taxonomy, or "technology dictionary", uses a technology discipline based approach that realigns like-technologies independent of their application within the NASA mission portfolio. This tool is meant to serve as a common technology discipline-based communication tool across the agency and with its partners in other government agencies, academia, industry, and across the world

    2์ฐจ์› ๊ธˆ์† ์นผ์ฝ”๊ฒ ํ™”ํ•ฉ๋ฌผ์˜ ํ•ฉ์„ฑ๊ณผ ์—ด ๋ฐ ์ „ํ•˜ ์šด์†ก ํŠน์„ฑ์— ๋Œ€ํ•œ ์—ฐ๊ตฌ

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    ํ•™์œ„๋…ผ๋ฌธ(๋ฐ•์‚ฌ)--์„œ์šธ๋Œ€ํ•™๊ต ๋Œ€ํ•™์› :๊ณต๊ณผ๋Œ€ํ•™ ํ™”ํ•™์ƒ๋ฌผ๊ณตํ•™๋ถ€,2020. 2. ์ •์ธ.Both the rapid growth of the global population and environmental problems ask to develop sustainably and environmentally friendly alternative energy resources. Thermoelectric technology is a good candidate because it directly converts heat into electric energy without releasing undesirable gaseous chemical residues. In order for this technology to be practically and broadly applied, the conversion efficiency of thermoelectrics should be improved, which is a main interest in the field. In this dissertation, I will discuss the new thermoelectric materials and their thermoelectric properties. Among many thermoelectric materials, I will focus on the Pb and Cl introduced n-type SnSe and Cu doped n-type Bi2Te3 based compounds. In addition, I discuss the performances of the thermoelectric device with a new metallization layer for minimal energy loss. First, I introduce both Cl and PbSe to induce n-type conduction in intrinsic p-type SnSe. PbSe alloying enhances power factor and suppresses lattice thermal conductivity at the same time, giving a highest thermoelectric figure of merit ZT of 1.2 at 823 K for n-type polycrystalline SnSe materials. The best composition is Sn0.90Pb0.15Se0.95Cl0.05. Samples prepared by solid state reaction show a high maximum ZT (ZTmax) ~1.1 and ~0.8 parallel and perpendicular to the press direction of spark plasma sintering, respectively. Remarkably, post ball-mill and annealing processes considerably reduce structural anisotropy, thereby leading to a ZTmax ~1.2 along both the directions. Hence, the direction giving a ZTmax is controllable for this system using the specialized preparation methods for specimens. Spherical aberration-corrected scanning transmission electron microscopic analyses reveal the presence of heavily dense edge dislocations and strain fields, not observed in the p-type counterparts, which contribute to decreasing lattice thermal conductivity. Second, I report an ultrahigh carrier mobility โˆผ467 cm2 Vโˆ’1 sโˆ’1 and power factor ~45 ฮผW cmโˆ’1 Kโˆ’2 in a new n-type Bi2Te3 system with the nominal composition CuxBi2Te3.17 (x = 0.02, 0.04, and 0.06). It is obtained by reacting Bi2Te3 with surplus Cu and Te and subsequently pressing powder products by spark plasma sintering (SPS). SPS discharges excess Te but stabilizes the high extent of Cu in the structure, giving unique SPS CuxBi2Te3.17 samples. The analyzed composition is close to CuxBi2Te3. Their charge transport properties are highly unusual. Hall carrier concentration and mobility simultaneously increase with the higher mole fraction of Cu contrary to the typical carrier scattering mechanism. As a consequence, the electrical conductivity is considerably enhanced with Cu incorporation. The Seebeck coefficient is nearly unchanged by increasing the Cu content in contrast to the general understanding of inverse relationship between electrical conductivity and Seebeck coefficient. These effects synergistically lead to a record high power factor among all polycrystalline n-type Bi2Te3-based materials. Third, the most reported thermoelectric modules suffer from considerable power loss due to high electrical and thermal resistivity arising at the interface between thermoelectric legs and metallic contacts. I devised the metallization layer of Fe-Ni alloy seamlessly securing skutterudite materials and metallic electrodes, allowing for a minimal loss of energy transferred from the former. It is applied to an 8 couple thermoelectric module that consists of n-type (Mm,Sm)yCo4Sb12 (ZTmax = 0.9) and p-type DDyFe3CoSb12 (ZTmax = 0.7) skutterudite materials. It performs as a diffusion barrier suppressing chemical reactions to produce a secondary phase at the interface. Consequent high thermal stability of the module results in the lowest reported electrical contact resistivity of 2.2โ€“2.5 ฮผC cm2 and one of the highest thermoelectric power density of 2.1 W cmโ€“2 for a temperature difference of 570 K. Employing a scanning transmission electron microscope equipped with an energy dispersive X-ray spectroscope detector, we confirmed that it is negligible for atomic diffusion across the interface and resulting formation of a detrimental secondary phase to energy transfer and thermal stability of the thermoelectric module.์ตœ๊ทผ ์„ธ๊ณ„ ์ธ๊ตฌ์˜ ๋น ๋ฅธ ์„ฑ์žฅ๊ณผ ์‹ฌ๊ฐํ•œ ํ™˜๊ฒฝ ์˜ค์—ผ ๋ฌธ์ œ๋กœ ์ธํ•ด ์ง€์† ๊ฐ€๋Šฅํ•˜๊ณ  ํ™˜๊ฒฝ ์นœํ™”์ ์ธ ๋Œ€์ฒด ์—๋„ˆ์ง€ ๊ธฐ์ˆ  ๊ฐœ๋ฐœ์ด ์š”๊ตฌ ๋˜๊ณ  ์žˆ๋‹ค. ์—ด์ „ ๊ธฐ์ˆ ์€ ์›ํ•˜์ง€ ์•Š๋Š” ํ™”ํ•™ ์ž”๋ฅ˜๋ฌผ์„ ๋ฐฉ์ถœํ•˜์ง€ ์•Š๊ณ  ์—ด์„ ์ „๊ธฐ ์—๋„ˆ์ง€๋กœ ์ง์ ‘ ๋ณ€ํ™˜ํ•  ์ˆ˜ ์žˆ๋Š” ์ข‹์€ ๋Œ€์ฒด ์—๋„ˆ์ง€ ๊ธฐ์ˆ  ์ค‘ ํ•˜๋‚˜์ด๋‹ค. ํ•ด๋‹น ๊ธฐ์ˆ ์ด ๋ณด๋‹ค ์‹ค์šฉ์ ์ด๊ณ  ๊ด‘๋ฒ”์œ„ํ•˜๊ฒŒ ์ ์šฉ๋˜๊ธฐ ์œ„ํ•ด์„œ๋Š” ์—ด์ „ ์†Œ์žฌ์˜ ์„ฑ๋Šฅ ํ–ฅ์ƒ์ด ํ•„์ˆ˜์ ์ด๋‹ค. ๋ณธ ํ•™์œ„ ๋…ผ๋ฌธ์€ ๊ณ ํšจ์œจ ์—ด์ „ ์†Œ์žฌ ๊ฐœ๋ฐœ์„ ์œ„ํ•œ ์ƒˆ๋กœ์šด ํ•ฉ์„ฑ๋ฒ• ๊ฐœ๋ฐœ ๋ฐ ๊ฐœ๋ฐœ๋œ ์†Œ์žฌ์˜ ์—ด์ „ ํŠน์„ฑ์— ๋Œ€ํ•˜์—ฌ ๊ธฐ์ˆ ํ•˜์˜€๋‹ค. ๋ณธ ๋…ผ๋ฌธ์€ ๋ณด๊ณ ๋œ ๋‹ค์–‘ํ•œ ์—ด์ „ ์†Œ์žฌ ์ค‘์—์„œ nํ˜• SnSe ์™€ nํ˜• Bi2Te3 ์†Œ์žฌ์— ๋Œ€ํ•œ ์—ฐ๊ตฌ ๋ฐ ์ƒˆ๋กœ์šด ๊ธˆ์† ์ธต์ด ๋„์ž…๋œ ์—ด์ „ ์†Œ์ž์˜ ํšจ์œจ์— ๋Œ€ํ•ด์„œ ๋…ผ์˜ํ•˜๊ณ ์ž ํ•œ๋‹ค. ๋จผ์ €, ๊ณ ์œ ํ•œ pํ˜• ์ „๋„ ํŠน์„ฑ์„ ๋ณด์ด๋Š” SnSe ๋ฐ˜๋„์ฒด์— nํ˜• ์ „๋„ ํŠน์„ฑ์„ ์œ ๋„ํ•˜๊ธฐ ์œ„ํ•ด Cl๊ณผ PbSe๋ฅผ ๋™์‹œ์— ๋„์ž…ํ•˜์˜€๋‹ค. PbSe ํ•ฉ๊ธˆ์€ ์—ญ๋ฅ (power factor)์„ ํ–ฅ์ƒ์‹œํ‚ฌ ๋ฟ๋งŒ ์•„๋‹ˆ๋ผ ๋™์‹œ์— ๊ฒฉ์ž ์—ด์ „๋„๋„๋ฅผ ์–ต์ œํ•˜์—ฌ 823 K ์—์„œ 1.2์˜ ์ตœ๊ณ  ZT ๊ฐ’์„ ์–ป์„ ์ˆ˜ ์žˆ์—ˆ๋‹ค. ๋†€๋ž๊ฒŒ๋„, ์ถ”๊ฐ€์ ์ธ ๋ณผ๋ฐ€ ๋ฐ ์–ด๋‹๋ง ๊ณต์ •์„ ํ†ตํ•ด์„œ ๊ตฌ์กฐ์  ์ด๋ฐฉ์„ฑ์„ ์ƒ๋‹นํžˆ ๊ฐ์†Œ์‹œํ‚ฌ ์ˆ˜ ์žˆ์—ˆ๊ณ , ๊ทธ ๊ฒฐ๊ณผ ์–‘๋ฐฉํ–ฅ์—์„œ ๋น„์Šทํ•œ ZTmax ~1.2 ๋ฅผ ๋ณด์ด๋Š” ๊ฒƒ์„ ํ™•์ธํ•˜์˜€๋‹ค. ์ฆ‰, ํ•ด๋‹น ์‹œ์Šคํ…œ์—์„œ ๋†’์€ ์—ด์ „ ํšจ์œจ์„ ๋ณด์ด๋Š” ๋ฐฉํ–ฅ์„ ํŠน๋ณ„ํ•œ ํ•ฉ์„ฑ ๋ฐฉ๋ฒ•์„ ํ†ตํ•ด ์กฐ์ ˆํ•  ์ˆ˜ ์žˆ์—ˆ๋‹ค. ๋˜ํ•œ, ๊ตฌ๋ฉด์ˆ˜์ฐจ๋ณด์ • ์ฃผ์‚ฌํˆฌ๊ณผ์ „์žํ˜„๋ฏธ๊ฒฝ ๋ถ„์„์„ ํ†ตํ•ด์„œ ๊ฒฉ์ž ์—ด์ „๋„๋„๋ฅผ ๋‚ฎ์ถ”๋Š”๋ฐ ๊ธฐ์—ฌํ•˜๋Š” ๋งค์šฐ ์กฐ๋ฐ€ํ•œ edge dislocation๊ณผ strain field ๋ฅผ ๊ด€์ธกํ•  ์ˆ˜ ์žˆ์—ˆ๋‹ค. ๋‘๋ฒˆ์งธ๋กœ, ์ƒˆ๋กœ์šด n ํ˜• Bi2Te3 ์‹œ์Šคํ…œ์—์„œ ์ „ํ•˜ ์ด๋™๋„๊ฐ€ 467 cm2 V-1 s-1 ๋ฐ ์—ญ๋ฅ ์ด ~ 45 ฮผW cm-1 K-2 ๊ฐ’์„ ๊ฐ€์ง€๋Š” ์†Œ์žฌ๋ฅผ ๊ฐœ๋ฐœํ•˜์˜€๋‹ค. ํ•ด๋‹น ์†Œ์žฌ๋Š” Bi2Te3์™€ ๊ณผ๋Ÿ‰์˜ Cu ๋ฐ Te์„ ํ•จ๊ป˜ ๋ฐ˜์‘์‹œํ‚จ ํ›„ ์ŠคํŒŒํฌ ํ”Œ๋ผ์ฆˆ๋งˆ ์†Œ๊ฒฐ (SPS) ์žฅ๋น„๋ฅผ ํ†ตํ•ด ๋ถ„๋ง ์ƒ์„ฑ๋ฌผ์„ ๊ฐ€์••ํ•จ์œผ๋กœ์จ ์–ป์„ ์ˆ˜ ์žˆ๋‹ค. SPS ๊ณผ์ •์—์„œ ๊ณผ๋Ÿ‰์˜ Te์€ ๋ฐฉ์ถœ๋˜์ง€๋งŒ ๋†’์€ ํ•จ๋Ÿ‰์˜ Cu๋ฅผ ๊ตฌ์กฐ ๋‚ด์— ์•ˆ์ •ํ™” ์‹œํ‚ค๋Š” ์ค‘์š”ํ•œ ์—ญํ• ์„ ํ•œ๋‹ค. ๊ทธ ๊ฒฐ๊ณผ ๋ถ„์„๋œ ์กฐ์„ฑ์€ "CuxBi2Te3"์— ๊ฐ€๊นŒ์šฐ๋ฉฐ, ๋…ํŠนํ•œ ์ „ํ•˜ ์šด์†ก ํŠน์„ฑ์„ ๋ณด์ธ๋‹ค. ์ „ํ˜•์ ์ธ ์ „ํ•˜ ์‚ฐ๋ž€ ๋ฉ”์ปค๋‹ˆ์ฆ˜๊ณผ๋Š” ๋‹ค๋ฅด๊ฒŒ ์ „ํ•˜ ๋†๋„ ๋ฐ ์ด๋™๋„๊ฐ€ Cu์˜ ํ•จ๋Ÿ‰์— ๋”ฐ๋ผ ๋™์‹œ์— ์ฆ๊ฐ€ํ•˜๋Š” ๊ฒƒ์„ ํ™•์ธํ•˜์˜€๋‹ค. ๊ทธ ๊ฒฐ๊ณผ, ์ „๊ธฐ ์ „๋„๋„๊ฐ€ Cu ๋„์ž…์„ ํ†ตํ•ด ์ƒ๋‹นํžˆ ํ–ฅ์ƒ๋˜์—ˆ๋‹ค. ํ•˜์ง€๋งŒ ์ „๊ธฐ ์ „๋„๋„์™€ ์ œ๋ฒก ๊ณ„์ˆ˜ ์‚ฌ์ด์˜ ์ผ๋ฐ˜์ ์ธ ์ดํ•ด์™€๋Š” ๋ฐ˜๋Œ€๋กœ Cu ํ•จ๋Ÿ‰์ด ์ฆ๊ฐ€ํ•จ์— ๋”ฐ๋ผ ์ œ๋ฒก ๊ณ„์ˆ˜๋Š” ๊ฑฐ์˜ ๋ณ€ํ•˜์ง€ ์•Š์•˜๋‹ค. ์ด๋Ÿฌํ•œ ํšจ๊ณผ๋“ค์ด ํ˜‘๋ ฅ์ ์œผ๋กœ ์ž‘์šฉํ•˜์—ฌ ๋งค์šฐ ๋†’์€ ๊ณก๋ฅ ์„ ์–ป์„ ์ˆ˜ ์žˆ์—ˆ์œผ๋ฉฐ, ์ด ๊ฐ’์€ ๋‹ค๊ฒฐ์ • nํ˜• ๋น„์Šค๋ฌด์Šค ํ…”๋ฃจ๋ผ์ด๋“œ ์ค‘ ๊ฐ€์žฅ ๋†’์€ ๊ฐ’์ด๋‹ค. ๋งˆ์ง€๋ง‰์œผ๋กœ, ๋ณด๊ณ  ๋œ ๋Œ€๋ถ€๋ถ„์˜ ์—ด์ „ ์†Œ์ž์˜ ๊ฒฝ์šฐ ์—ด์ „ ์†Œ์žฌ์™€ ๊ธˆ์† ์ „๊ทน ์‚ฌ์ด์˜ ์ธํ„ฐํŽ˜์ด์Šค์—์„œ ๋ฐœ์ƒํ•˜๋Š” ๋†’์€ ์ „๊ธฐ ๋ฐ ์—ด ์ €ํ•ญ์œผ๋กœ ์ธํ•ด ์ƒ๋‹นํ•œ ์ „๋ ฅ ์†์‹ค์ด ๋ฐœ์ƒํ•œ๋‹ค. ๋ณธ ์—ฐ๊ตฌ์—์„œ๋Š” Skutterudite ์žฌ๋ฃŒ์™€ ๊ธˆ์† ์ „๊ทน์„ ์™„๋ฒฝํ•˜๊ฒŒ ๊ณ ์ •ํ•˜๋Š” Fe-Ni ํ•ฉ๊ธˆ์˜ ๊ธˆ์† ์ธต์„ ๊ณ ์•ˆํ•˜์—ฌ ์ „๋‹ฌ๋˜๋Š” ์—๋„ˆ์ง€ ์†์‹ค์„ ์ตœ์†Œํ™” ์‹œ์ผฐ๋‹ค. ๊ฐœ๋ฐœํ•œ ๊ธˆ์† ์ธต์€ ๊ณ„๋ฉด์—์„œ์˜ ํ™”ํ•™ ๋ฐ˜์‘์„ ์–ต์ œํ•˜๋Š” ํ™•์‚ฐ ๋ฐฉ์ง€๋ง‰ ์—ญํ• ์„ ํ•˜๋Š” ๊ฒƒ์„ ํ™•์ธํ•˜์˜€๋‹ค. ๊ฒฐ๊ณผ์ ์œผ๋กœ ๊ฐœ๋ฐœํ•œ ์†Œ์ž๋Š” ๋ณด๊ณ ๋œ ๊ฐ’ ์ค‘ ๊ฐ€์žฅ ๋‚ฎ์€ ์ „๊ธฐ ์ ‘์ด‰ ์ €ํ•ญ์„ ๊ฐ€์ง€๋ฉฐ (2.2โ€“2.5 ฮผC cm2), ์˜จ๋„ ์ฐจ์ด๊ฐ€ 570K ์—์„œ 2.1W cm-2 ์˜ ๋†’์€ ์—ด์ „ ์ „๋ ฅ ๋ฐ€๋„๋ฅผ ๋ณด์˜€๋‹ค. ์šฐ๋ฆฌ๋Š” ์—ด์ „ ๋ชจ๋“ˆ์˜ ์—๋„ˆ์ง€ ์ „๋‹ฌ๊ณผ ์—ด ์•ˆ์ •์„ฑ์— ์œ ํ•ดํ•œ 2์ฐจ์ƒ์˜ ํ˜•์„ฑ์ด ๋ฌด์‹œํ•  ์ˆ˜์ค€์ธ ๊ฒƒ์„ ์ฃผ์‚ฌํˆฌ๊ณผ์ „์žํ˜„๋ฏธ๊ฒฝ ๋ถ„์„์„ ํ†ตํ•ด ํ™•์ธํ•˜์˜€๋‹ค.Chapter 1. Introduction: High performance bulk thermoelectric materials and Dissertation Overview 1 1.1 Introduction of Thermoelectrics 1 1.2 General background 7 1.3 Advanced approaches for thermoelectric materials 12 1.3.1 Doping and alloying 12 1.3.2 Nanostructuring 16 1.3.3 All-scale hierarchical architecturing e 20 1.3.4 Discoveries of promising materials with intrinsically low thermal conductivity 24 1.3.5 Increasing the power factor through band engineering 30 1.4 Dissertation Overview 37 Chapter 2. High Thermoelectric Performance in n-Type Polycrystalline SnSe via Dual Incorporation of Cl and PbSe and Dense Nanostructures 50 2.1 Introduction 50 2.2 Experimental section 56 2.3 Resutls and discussion 61 2.4 Conclusion 109 2.5 References 111 Chapter 3. Ultrahigh Power Factor and Electron Mobility in nโ€‘Type Bi2Te3โˆ’x% Cu Stabilized under Excess Te Condition 121 3.1 Introduction 121 3.2 Experimental section 128 3.3 Resutls and discussion 133 3.4 Conclusion 172 3.5 References 173 Chapter 4. High Power Density Skutterudite-based Thermoelectric Modules with Ultralow Contact Resistivity Using Fe-Ni Metallization Layers 184 4.1 Introduction 184 4.2 Experimental section 189 4.3 Resutls and discussion 193 4.4 Conclusion 214 4.5 References 216 Biblography 227 ๊ตญ๋ฌธ ์ดˆ๋ก (Abstract in Korean) 229Docto

    Understanding the Global Energy Crisis

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    Central issues in global energy are discussed through interdisciplinary dialogue between experts from both North America and Europe with overview from historical, political, and socio-cultural perspectives, outlining the technology and policy issues facing the development of major conventional and renewable energy sources. We are facing a global energy crisis caused by world population growth, an escalating increase in demand, and continued dependence on fossil-based fuels for generation. It is widely accepted that increases in greenhouse gas concentration levels, if not reversed, will result in major changes to world climate with consequential effects on our society and economy. This is just the kind of intractable problem that Purdue Universityโ€™s Global Policy Research Institute seeks to address in the Purdue Studies in Public Policy series by promoting the engagement between policy makers and experts in fields such as engineering and technology

    Emerging semiconductor nanostructure materials for single-photon avalanche diodes

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    Detecting of light at the single photon level has a far-reaching impact that enables a broad range of applications. In sensing, advances in single-photon detection enable low light applications such as night-time operation, rapid satellite communication, and long-range three-dimensional imaging. In biomedical engineering, advancing single-photon detection technologies positively impacts patient care through important applications like singlet oxygen detection for dose monitoring in cancer treatment. In industry, impacts are made on state-of-the-art technologies like quantum communication which relies on the efficient detection of light at the fundamental limit. While the high impact of single-photon detection technologies is clear, the potential for improvement and challenges faced by prominent single-photon detection technologies remains. Superconducting single-photon detectors push the bounds of performance, but their high cost and lack of portability limits their prospect for far reaching applicability. Single-photon avalanche diodes (SPADs) are a promising alternative which can be made portable, absent of the need for cryogenic cooling, but they generally lack the performance of superconducting detectors. The materials in SPAD designs dictate operation, and conventional materials implemented being defined according to intrinsic material properties, limits SPAD performance. However, new classes of advanced materials are being realized which exhibit modified electromagnetic properties from the engineered arrangement of subwavelength structural units and low-dimensional properties. Such materials include metamaterials and low-dimensional materials, and they have been shown to enhance optoelectrical properties that are critical to avalanche photodiodes, like rapid photo response, enhanced absorption, and reduced dark current. In this work, the application of such advanced materials in SPADs is explored. Tapered nanowires and nanowire arrays are optimized for enhanced absorption and shown experimentally at room temperature to demonstrate high speed near-unity absorptance response at the single-photon level. In the metamaterial and nanowire devices, the gain and timing jitter are shown to be significantly improved over conventional bulk-based designs. Furthermore, the modelling of metamaterials in a SPAD device design and its operation with external single-photon detection circuitry is studied. The analysis is further shown to extend down to single nanowire devices which offers an elegant approach for integrated photonic circuits
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