Utilisation of microsystems technology in radio frequency and microwave applications

The market trends of the rapidly growing communication systems require new product architectures and services that are only realisable by utilising technologies beyond that of planar integrated circuits. Microsystems technology (MST) is one such technology which can revolutionise radio frequency (RF) and microwave applications. This article discusses the enabling potential of the MST to meet the stringent requirements of modern communication systems. RF MST fabrication technologies and actuation mechanisms empower conventional processes by alleviating the substrate effects on passive devices and provide product designers with high quality versatile microscale components which can facilitate system integration and lead to novel architectures with enhanced robustness and reduced power consumption. An insight on the variety of components that can be fabricated using the MST is given, emphasizing their excellent electrical performance and versatility. Research issues that need to be addressed are also discussed. Finally, this article discusses the main approaches for integrating MST devices in RF and microwave applications together with the difficulties that need to be overcome in order to make such devices readily available for volume-production.peer-reviewe

Manufacture and Characterization of High Q-Factor Inductors Based on CMOS-MEMS Techniques

A high Q-factor (quality-factor) spiral inductor fabricated by the CMOS (complementary metal oxide semiconductor) process and a post-process was investigated. The spiral inductor is manufactured on a silicon substrate. A post-process is used to remove the underlying silicon substrate in order to reduce the substrate loss and to enhance the Q-factor of the inductor. The post-process adopts RIE (reactive ion etching) to etch the sacrificial oxide layer, and then TMAH (tetramethylammonium hydroxide) is employed to remove the silicon substrate for obtaining the suspended spiral inductor. The advantage of this post-processing method is its compatibility with the CMOS process. The performance of the spiral inductor is measured by an Agilent 8510C network analyzer and a Cascade probe station. Experimental results show that the Q-factor and inductance of the spiral inductor are 15 at 15 GHz and 1.8 nH at 1 GHz, respectively

Micro electromechanical relays and their application in variable inductor networks

A family of microrelay devices together with integrated inductor networks has been designed, simulated, fabricated and experimental characterized. These switched networks utilize microelectromechanical systems (MEMS) as a fabrication technology and take advantage of the economies of semiconductor cleanroom batch-processing. A new type of microrelay has been developed using a suspended TaSi2/SiO2 bimorph cantilever beam, gold-to-gold electrical contact, aluminum as sacrificial layer, and a combined thermal and electrostatic means of actuation. For the first time a micro variable inductor network which is digitally controlled by microrelays has been demonstrated. A test structure for electrical micro contact characterization has been designed, built and characterized as a support task in this research. The microrelay design has utilized the Rayleigh-Ritz method to simulate the actuation and the electrical contact force. The cantilever structure of the microrelay contains a specially-shaped area which provides a symmetric force to the electrical contact region and thus reduces the electrical contact resistance. The required thermal power and electrostatic voltage for the combined actuation of microrelays were measured typically as II mW and 30 - 40 volts, respectively. The electrical contact resistance was typically 0.6 to 0.8 Ohms. The maximum operation frequency was 10 KHz and the microrelay closure and opening time were typically 12 µS. A limited number of lifetime tests were performed indicating the device lifetime to be about 106 cycles. A micro variable inductor network consisting of a 16-turn rectangular spiral coil and four controlling microrelays was designed and fabricated. A larger coil structure was divided into four segments. Each inductor segment had a microrelay connected with it in parallel. The network inductance values were determined by combinations of switching states of microrelays. Sixteen different inductance values ranging from 2.5 nH to 324.8 nH were obtained. The silicon substrate underneath the inductor region was etched out to reduce the substrate loss. The minimum self-resonant frequency was measured 1.9 GHz

Above-IC RF MEMS devices for communication applications

Wireless communications are showing an explosive growth in emerging consumer and military applications of radiofrequency (RF), microwave, and millimeter-wave circuits and systems. Applications include wireless personal connectivity (Bluetooth), wireless local area networks (WLAN), mobile communication systems (GSM, GPRS, UMTS, CDMA), satellite communications and automotive electronics. Future cell phones and ground communication systems as well as communication satellites will require more and more sophisticated technologies. The increasing demand for size and weight reduction, cost savings, low power consumption, increased frequency and higher functionality and reconfigurability as part of multiband and multistandard operation is necessitating the use of highly integrated RF front-end circuits. Chip scaling has made a major contribution to this goal, but today a situation has been reached where the presence of numerous off-chip passive RF components imposes a critical bottleneck to further integration and miniaturization of wireless transceivers. Microelectromechanical systems (MEMS) technology is a rapidly emerging enabling technology that is intended to replace the discrete passives by their integrated counterparts. In this thesis, an original metal surface micromachining process, which is compatible with CMOS post-processing, for above-IC integration of RF MEMS tunable capacitors and suspended inductors is presented. A detailed study on SF6 inductively coupled plasma (ICP) releasing has been performed in order to ascertain the optimal process parameters. This study has emphasized the fact that temperature plays an important role in this process by limiting silicon dioxide etching. Moreover, the optimized recipe has been found to be independent of the sacrificial layer used (amorphous or polycrystalline silicon) and its thickness. Using this recipe, 15.6 µm/min Si underetch rate with high Si: SiO2 selectivity (> 20000: 1) has been obtained. Single-air-gap and double-air-gap parallel-plate MEMS tunable capacitors have been designed, fabricated and characterized in the pF range, from 1 MHz to 13.5 GHz. It has been shown that an optimized design of the suspended membrane and direct symmetrical current feed at both ports can significantly improve the quality factor and increase the self-resonant frequency, pushing it to 12 GHz and beyond. The maximum capacitance tuning range obtained for a single-air-gap capacitor is 29% for a bias voltage of 20 V. The maximum capacitance tuning range obtained for a double-air-gap capacitor is 207% for a bias voltage of 70 V. The post-processing of X-FAB BiCMOS wafers has been successfully demonstrated to fabricate monolithically integrated VCOs with above-IC MEMS LC tank. Comparing a suspended inductor and the X-FAB inductor with the same design, it has been shown that increasing the thickness of the spiral from 2.3 to 4 µm and having the spiral suspended 3 µm above the passivation layers lead to an improvement factor of 2 for the peak quality factor and a shift of the self-resonant frequency beyond 15 GHz. No significant variation on bipolar and MOS transistors characteristics due to the post-processing has been observed and we conclude that the variation due to post-processing is in the same range as the wafer-to-wafer variation. Based on our metal surface micromachining process, coplanar waveguide (CPW) MEMS shunt capacitive switches and variable true-time delay lines (V-TTDLs) have been designed, fabricated and characterized in the 1 - 20 GHz range. A novel MEMS device architecture: the SG-MOSFET, which combines a solid-state MOS transistor and a metal suspended gate has been proposed as DC current switch. The corresponding fabrication process using polysilicon as a sacrificial layer has been developed to release metal gate suspended over gate oxide by SF6 plasma. Very abrupt current switches have been demonstrated with subthreshold slope better than 10 mV/decade (better than the theoretical solid-state bulk or SOI MOSFET limit of 60 mV/decade) and ultra-low gate leakage (less than 0.001 pA/µm2) due to the air-gap

Microfabricated Implantable Parylene-Based Wireless Passive Intraocular Pressure Sensors

This paper presents an implantable parylene-based wireless pressure sensor for biomedical pressure sensing applications specifically designed for continuous intraocular pressure (IOP) monitoring in glaucoma patients. It has an electrical LC tank resonant circuit formed by an integrated capacitor and an inductor coil to facilitate passive wireless sensing using an external interrogating coil connected to a readout unit. Two surface-micromachined sensor designs incorporating variable capacitor and variable capacitor/inductor resonant circuits have been implemented to realize the pressure-sensitive components. The sensor is monolithically microfabricated by exploiting parylene as a biocompatible structural material in a suitable form factor for minimally invasive intraocular implantation. Pressure responses of the microsensor have been characterized to demonstrate its high pressure sensitivity (> 7000 ppm/mmHg) in both sensor designs, which confirms the feasibility of pressure sensing with smaller than 1 mmHg of resolution for practical biomedical applications. A six-month animal study verifies the in vivo bioefficacy and biostability of the implant in the intraocular environment with no surgical or postoperative complications. Preliminary ex vivo experimental results verify the IOP sensing feasibility of such device. This sensor will ultimately be implanted at the pars plana or on the iris of the eye to fulfill continuous, convenient, direct, and faithful IOP monitoring

High quality factor copper inductors integrated in deep dry-etched quartz substrates

This paper reports on an inductor fabrication method capable to deliver high quality factor (Q) and high self-resonance frequency (SRF) devices using quartz insulating substrates and thick high-conductivity copper lines. Inductors are key devices in RF circuits that, when fabricated on traditional semiconductor substrates, suffer from poor RF performances due to thin metallization and substrate related losses. Many previous works revealed that RF performances are strongly dependent on the limited metallization thickness and on the conductivity of the substrate. In this paper we demonstrate a new fabrication process to improve the Q factor of spiral inductors by patterning thick high conductive metal layers directly in a dielectric substrate. Moreover, we develop and validate accurate equivalent circuit modeling and parameter extraction for the characterization of the fabricated device

Design, Optimization and Fabrication of Amorphous Silicon Tunable RF MEMS Inductors and Transformers

High performance inductors are playing an increasing role in modern communication systems. Despite the superior performance offered by discrete components, parasitic capacitances from bond pads, board traces and packaging leads reduce the high frequency performance and contribute to the urgency of an integrated solution. Embedded inductors have the potential for significant increase in reliability and performance of the IC. Due to the driving force of CMOS integration and low costs of silicon-based IC fabrication, these inductors lie on a low resistivity silicon substrate, which is a major source of energy loss and limits the frequency response. Therefore, the quality factor of inductors fabricated on silicon continues to be low. The research presented in this thesis investigates amorphous Si and porous Si to improve the resistivity of Si substrates and explores amorphous Si as a structural material for low temperature MEMS fabrication. Planar inductors are built-on undoped amorphous Si in a novel application and a 56% increase in quality factor was measured. Planar inductors are also built-on a porous Si and amorphous Si bilayer and showed 47% improvement. Amorphous Si is also proposed as a low temperature alternative to polysilicon for MEMS devices. Tunable RF MEMS inductors and transformers are fabricated based on an amorphous Si and aluminum bimorph coil that is suspended and warps in a controllable manner. The 3-D displacement is accurately predicted by thermomechanical simulations. The tuning of the devices is achieved by applying a DC voltage and due to joule heating the air gap can be adjusted. A tunable inductor with a 32% tuning range from 5.6 to 8.2 nH and a peak Q of 15 was measured. A transformer with a suspended coil demonstrated a 24% tuning range of the mutual coupling between two stacked windings. The main limitation posed by post-CMOS integration is a strict thermal budget which cannot exceed a critical temperature where impurities can diffuse and materials properties can change. The research carried out in this work accommodates this temperature restriction by limiting the RF fabrication processes to 150°C to facilitate system integration on silicon

Metal-embedded SU-8 Slab Techniques for Low-resistance Micromachined Inductors

This work presents a new fabrication technique for micro power inductors by using metal-embedded SU-8 slab molding techniques. The proposed technique uses X-ray lithography to fabricate high-aspect-ratio LIGA-like microstructures in form of embedded structures in the SU-8 slab. This process was applied to fabricate an inductor’s windings with an aspect ratio of 10, which can provide very low resistance but still preserve a small form factor and low profile. Inductors were designed as pot-core structures with overall heights of 370 μm and embedded with 250-μm-thick windings. From the advantage of metal embedded SU-8 slab techniques, 8 μm-thick permalloy core could be fabricated by electroplating around the winding in a single step that could help simplify the process. Four types of inductors were fabricated with 3, 5, 10, and 16 turns in the area of 1.8 to 9.5 mm2. The measured inductance was in the range of 70 nH to 1.3 μH at 1 MHz and DC resistance of 30–336 mΩ for 3–16 turns, respectively. The DC resistance of fabricated inductor was low, as expected, and showed good result compared with the results in literature