Thick-Film and LTCC Passive Components for High-Temperature Electronics

At this very moment an increasing interest in the field of high-temperature electronics is observed. This is a result of development in the area of wide-band semiconductors’ engineering but this also generates needs for passives with appropriate characteristics. This paper presents fabrication as well as electrical and stability properties of passive components (resistors, capacitors, inductors) made in thick-film or Low-Temperature Co-fired Ceramics (LTCC) technologies fulfilling demands of high-temperature electronics. Passives with standard dimensions usually are prepared by screen-printing whereas combination of standard screen-printing with photolithography or laser shaping are recommenced for fabrication of micropassives. Attainment of proper characteristics versus temperature as well as satisfactory long-term high-temperature stability of micropassives is more difficult than for structures with typical dimensions for thick-film and LTCC technologies because of increase of interfacial processes’ importance. However it is shown that proper selection of thick-film inks together with proper deposition method permit to prepare thick-film micropassives (microresistors, air-cored microinductors and interdigital microcapacitors) suitable for the temperature range between 150°C and 400°C

Design, processing and testing of LSI arrays, hybrid microelectronics task

Mathematical cost models previously developed for hybrid microelectronic subsystems were refined and expanded. Rework terms related to substrate fabrication, nonrecurring developmental and manufacturing operations, and prototype production are included. Sample computer programs were written to demonstrate hybrid microelectric applications of these cost models. Computer programs were generated to calculate and analyze values for the total microelectronics costs. Large scale integrated (LST) chips utilizing tape chip carrier technology were studied. The feasibility of interconnecting arrays of LSU chips utilizing tape chip carrier and semiautomatic wire bonding technology was demonstrated

Partial Discharge in Electronic Equipments

Tato disertační práce se věnuje studiu částečných výbojů (PD) způsobených poklesem spolehlivosti a životnosti elektronických zařízení a systémů. Diagnostika PD je dnes známá metoda pro vysoké napětí u vysoko-výkonných zařízení. V případě elektronických zařízení PD testování není ale běžně používáná metoda, přestože je zde také potenciál pro vysoké elektrické zatížení vzhledem k velmi krátké vzdálenosti. Tato práce je zaměřena na vyšetřování PD činnosti u elektronických zařízení. Bylo navrženo a provedeno pracoviště pro diagnostiku PD v elektronických zařízeních. Pracovní frekvence se pohybuje od několika stovek Hz až 100 kHz. Maximální amplituda PD testovaného napětí je vyšší než 10 kV. Navzdory jednoduché konstrukci toto zařízení přináší vysokou spolehlivost měření. Více než 300 PD testů bylo provedeno na různých elektronických zařízeních a elektronických součástí,např. na planárních transformátorech a elektronických komponentách používaných při vysoko-napěťových měničíchThis dissertation thesis is devoted to study of partial discharge (PD) caused decrease of reliability and lifetime of electronic equipments and systems. PD diagnostic is nowadays well known method for high voltage high power equipments but in case of electronic devices PD testing it is not used routinely despite that there is also a potential for high electric load due to extremely short distances. The risk of PD caused failure is here extremely high because of high working frequency and consequently high repetition rate of PD events. Therefore, this work is focused on investigation of PD activity in electronic equipments. The workplace for PD diagnostic in electronic devices based on switched power supply was designed and made. Working frequency ranges from several hundreds of Hertz up to 100 kHz. The maximal amplitude of PD testing voltage is higher than 10 kV. Despite the simple design this equipment brings high repeatability and reliability of measurement. More than 300 PD tests were made on different electronic devices and electronic components, on planar transformers, and on components for voltage gate drivers for use in high voltage power converters. Possibilities of PD tools in investigation and engineering ofd insulation systems were demonstrated.

Thermomechanical Characterization And Modeling For TSV Structures

Continual scaling of devices and on-chip wiring has brought significant challenges for materials and processes beyond the 32-nm technology node in microelectronics. Recently, three-dimensional (3-D) integration with through-silicon vias (TSVs) has emerged as an effective solution to meet the future technology requirements. Among others, thermo-mechanical reliability is a key concern for the development of TSV structures used in die stacking as 3-D interconnects. This paper presents experimental measurements of the thermal stresses in TSV structures and analyses of interfacial reliability. The micro-Raman measurements were made to characterize the local distribution of the near-surface stresses in Si around TSVs. On the other hand, the precision wafer curvature technique was employed to measure the average stress and deformation in the TSV structures subject to thermal cycling. To understand the elastic and plastic behavior of TSVs, the microstructural evolution of the Cu vias was analyzed using focused ion beam (FIB) and electron backscattering diffraction (EBSD) techniques. Furthermore, the impact of thermal stresses on interfacial reliability of TSV structures was investigated by a shear-lag cohesive zone model that predicts the critical temperatures and critical via diameters.Microelectronics Research Cente

NASA guidelines on report literature

NASA seeks for inclusion in its Scientific and Technical Information System research reports, conference proceedings, meeting papers, monographs, and doctoral and post graduate theses which relate to the NASA mission and objectives. Topics of interest to NASA are presented