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High-Efficiency Triple-Junction Amorphous Silicon Alloy Photovoltaic Technology; Annual Technical Progress Report, 6 March 1998--5 March 1999
This report describes the research performed during Phase I of this three-phase, three-year program. The research program is intended to expand, enhance, and accelerate knowledge and capabilities for developing high-performance, two-terminal multijunction amorphous silicon (a-Si) alloy cells and modules with low manufacturing cost and high reliability. To improve efficiency, United Solar uses a spectral-splitting, triple-junction cell structure. In this configuration, the top cell uses an amorphous silicon alloy of {approx}1.8 eV bandgap to absorb the blue photons. The middle cell uses an amorphous silicon germanium alloy ({approx}20% germanium) of {approx}1.6 eV bandgap to capture the green photons. The bottom cell has {approx}40% germanium to reduce the bandgap to {approx}1.4 eV to capture the red photons. The cells are deposited on stainless steel with a predeposited silver/zinc oxide back reflector to facilitate light trapping. A thin layer of antireflection coating is applied to the top of the cell to reduce reflection loss. During this year, research activities were carried out in the following four areas: (1) fundamental studies to improve our understanding of materials and devices, (2) small-area cell research to obtain the highest cell efficiency, (3) deposition of small-area cells using a modified very high frequency (MVHF) technique to obtain higher deposition rates, and (4) large-area cell research to obtain the highest module efficiency
Development of Advanced Thin Films by PECVD for Photovoltaic Applications
Compared to wafer based solar cells, thin film solar cells greatly reduce material cost and thermal budget due to low temperature process. Monolithically manufacturing allows large area fabrication and continuous processing. In this work, several photovoltaic thin films have been developed by rf-PECVD including a-Si:H and μc-Si, both intrinsic and doped on Corning 4 inch glass substrate at low temperature. The conductivity of n type and p type μc-Si at 180ºC was 17S/cm and 7.1E-2S/cm, respectively. B dopants either in a-Si:H or μc-Si films require higher plasma power to get active doping. The B2H6-to-SiH4 flow ratio for p type μc-Si lies from 0.01 to 0.025. Chamber conditions have critical effect on film quality. Repeatable and superior results require a well-established cleaning passivation procedure.
Moreover, μc-Si films have been deposited from pure silane on glass substrate by modified rf-ICP-CVD. The deposition rate has been dramatically increased to 5Å/s due to little H2 dilution with crystalline fraction was around 69%, and 6.2Å/s with crystalline fraction 45%. Microstructure started to form at 150ºC with a thin incubation layer on the glass substrate, and became fully dense conical conglomerates around 300nm where conductivity and crystallinity saturated. Additionally, a-SiGe:H films have been developed by modified rf-ICP-CVD. The optical band gaps have been varied from 1.25 to 1.63eV by changing SiH4-to-GeH4 ratio. Also high temperature resulted in low bandgap. Cross-section TEM showed some microcrystllites appeared near interface region. Heterojunction solar cells on p type c-Si wafer have been fabricated using films developed in this thesis. Interference fringes in EQE disappeared on either textured substrate or cells with lift-off contacts. Maximum EQE was 87% around 700nm. I-V curves have also been studied where the interesting kink suggests a counter-diode has formed between emitter region and contacts
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