Micro and Nano Structure of Electrochemically Etched Silicon Epitaxial Wafers

Silicon epitaxial wafers, consisting of 280 μm thick n-type substrate layer and 4–5 μm thick epitaxial layer, were electrochemically etched in hydrofluoric acid ethanol solution, to produce porous silicon samples. The resistivity of epitaxial layer was 1 Ω cm, while the substrate was much better conductor with resistivity 0.015 Ω cm. By varying the etching time, the micro- and nano-pores of different sizes were obtained within the epitaxial layer, and on the substrate surface. Due to the lateral etching the epitaxial layer was partially detached from the substrate and could be peeled off. The influence of etching time duration on the optical and structural properties of porous samples was investigated by Raman, infrared and photoluminescence spectroscopy. The samples were analysed immediately after the etching and six months later, while being stored in ambient air. The Raman spectra showed the shift in positions of transversal optical (TO) phonon bands, between freshly etched samples and the one stored in ambient air. Infrared spectra indicated the presence of SiHx species in the freshly etched samples, and appearance of oxidation after prolonged storage. Photoluminescence spectra were very weak in freshly etched samples, but their intensity has increased substantially in six month period. (doi: 10.5562/cca1971

Aspects of Silicon Solar Cells: Thin-Film Cells and LPCVD Silicon Nitride

This thesis discusses the growth of thin-film silicon layers suitable for solar cells using liquid phase epitaxy and the behaviour of oxide LPCVD silicon nitride stacks on silicon in a high temperature ambient.¶ The work on thin film cells is focussed on the characteristics of layers grown using liquid phase epitaxy. The morphology resulting from different seeding patterns, the transfer of dislocations to the epitaxial layer and the lifetime of layers grown using oxide compared with carbonised photoresist barrier layers are discussed. The second half of this work discusses boron doping of epitaxial layers. Simultaneous layer growth and boron doping is demonstrated, and shown to produce a 35um thick layer with a back surface field approximately 3.5um thick.¶ ..

Electrodeposited semiconductor nanostructures & epitaxial thin films for flexible electronics

Single-crystal Si is the bedrock of semiconductor devices due to the high crystalline perfection which minimizes electron-hole recombination, and the dense native silicon oxide which minimizes surface states. To expand the palette of electronic materials beyond planar Si, an inexpensive source of highly ordered material is needed that can serve as an inert substrate for the epitaxial growth of grain boundary-free semiconductors, photonic materials, and superconductors. There is also a need for a simple, inexpensive, and scalable fabrication technique for the growth of semiconductor nanostructures and thin films. This dissertation focuses on the fabrication of semiconducting nanowires (polycrystalline Ge & epitaxial ZnO) and epitaxial thin films (Au & Cu₂O) using electrodeposition from an aqueous solution at ambient conditions as a simple benchtop process. Paper I describes a simple one-step electrodeposition of Ge nanowires on an indium-tin oxide substrate decorated with In nanoparticles. An In metal acts both as a catalyst for electrodeposition and as a solvent for recrystallization of the nanowires at ambient conditions. Ge nanowires are an attractive anode material for Li-ion batteries, due to their larger theoretical capacity compared to graphite. Paper II presents a scheme for epitaxial electrodeposition of ultrathin Au films on Si as an inexpensive proxy for single crystal Au for the electrodeposition of epitaxial Cu₂O thin films. A detailed study of the epitaxial growth, morphology, junction characteristics, and crystallinity is performed for both the Au and Cu₂O thin films. Paper III describes a technique for epitaxial lift-off of wafer-scale Au foils as transparent, single-crystal and flexible substrates for flexible electronics. The Au foils offer the order of traditional single-crystal semiconductors without the constraint of a rigid substrate. An organic light emitting diode is presented to evaluate the flexibility and transparency of Au foils. To study the single crystal nature of Au foil an epitaxial Cu₂O thin film inorganic diode with an improved diode quality factor is demonstrated --Abstract, page iv

Electrodeposition of epitaxial metal thin films on silicon for energy conversion and flexible electronics

This research focuses on epitaxial electrodeposition of two coinage metals: Au and Ag thin films on the silicon surface and their applications in flexible electronics and energy conversion and storage. The first paper: Photoelectrochemistry of ultrathin, semi-transparent, and catalytic gold films electrodeposited epitaxially onto n-silicon (111) describes the epitaxial electrodeposition of Au thin films on n-type Si using a simple HAuCl4 bath and the photoelectrochemical properties of the Au-Si junction barrier. The effect of the Au layer on the interfacial energetics as well as the stability of the photoelectrode as a function of the Au coverage/thickness is determined in a regenerative cell. The second paper: Epitaxial lift-off of electrodeposited single-crystal gold foils for flexible electronics shows a technique for epitaxial lift-off of Au foils as semi-transparent, flexible and single crystal-like substrates for flexible electronics. A Au thin film is first deposited on Si and then photooxidation is performed followed by a lift-off process. The Au foils exhibit a low sheet resistance down to 7 ohms per square and show only a 4% increase in resistance after 4000 bending cycles. A flexible organic light-emitting diode that was spin-coated on a Au foil exploited the transmittance and flexibility of the foil. The third paper: Electrodeposition of nanometer-thick epitaxial films of silver onto single-crystal silicon wafers introduces the electrodeposition of epitaxial Ag thin films on n-type Si of three different low-index orientations from an acetate bath. A comparison of silver acetate electrolyte and cyanide electrolyte was also performed, showing advantages of the acetate bath over the cyanide bath for growth of epitaxial films of Ag on Si surfaces --Abstract, page iv

Ion beam irradiation induced fabrication of silicon photonics - from 2D to 3D

Ph.DDOCTOR OF PHILOSOPH

A thin film approach for SiC-derived graphene as an on-chip electrode for supercapacitors

© 2015 IOP Publishing Ltd. We designed a nickel-assisted process to obtain graphene with sheet resistance as low as 80 Ω square-1 from silicon carbide films on Si wafers with highly enhanced surface area. The silicon carbide film acts as both a template and source of graphitic carbon, while, simultaneously, the nickel induces porosity on the surface of the film by forming silicides during the annealing process which are subsequently removed. As stand-alone electrodes in supercapacitors, these transfer-free graphene-on-chip samples show a typical double-layer supercapacitive behaviour with gravimetric capacitance of up to 65 F g-1. This work is the first attempt to produce graphene with high surface area from silicon carbide thin films for energy storage at the wafer-level and may open numerous opportunities for on-chip integrated energy storage applications

Structured epitaxial graphene: growth and properties

graphene ; nano-structure ; electronic transport ; ballistic transportInternational audienceGraphene is generally considered to be a strong candidate to succeed silicon as an electronic material. However, to date, it actually has not yet demonstrated capabilities that exceed standard semiconducting materials. Currently demonstrated viable graphene devices are essentially limited to micron size ultrahigh frequency analog field effect transistors and quantum Hall effect devices for metrology. Nanoscopically patterned graphene tends to have disordered edges which severely reduce mobilities thereby obviating its advantage over other materials. Here we show that graphene grown on structured silicon carbide surfaces overcomes the edge roughness and promises to provide an inroad into nanoscale patterning of graphene. We show that high quality ribbons and rings can be made using this technique. We also report on progress towards high mobility graphene monolayers on silicon carbide for device applications