Real-time Analog Pixel-to-pixel Dynamic Frame Differencing with Memristive Sensing Circuits

In this paper, we propose an analog pixel differencing circuit for differentiating pixels between frames directly from CMOS pixels. The analog information processing at sensor is a topic of growing appeal to develop edge AI devices. The proposed circuit is integrated into a pixel-parallel and pixel-column architectures. The proposed system is design using TSMC $180nm$ CMOS technology. The power dissipation of the proposed circuit is $96.64mW$, and on-chip ares is $531.66 \mu m^2$. The architectures are tested for moving object detection application.Comment: IEEE SENSORS 201

Neuro-memristive Circuits for Edge Computing: A review

The volume, veracity, variability, and velocity of data produced from the ever-increasing network of sensors connected to Internet pose challenges for power management, scalability, and sustainability of cloud computing infrastructure. Increasing the data processing capability of edge computing devices at lower power requirements can reduce several overheads for cloud computing solutions. This paper provides the review of neuromorphic CMOS-memristive architectures that can be integrated into edge computing devices. We discuss why the neuromorphic architectures are useful for edge devices and show the advantages, drawbacks and open problems in the field of neuro-memristive circuits for edge computing

Application of Memristors in Microwave Passive Circuits

The recent implementation of the fourth fundamental electric circuit element, the memristor, opened new vistas in many fields of engineering applications. In this paper, we explore several RF/microwave passive circuits that might benefit from the memristor salient characteristics. We consider a power divider, coupled resonator bandpass filters, and a low-reflection quasi-Gaussian lowpass filter with lossy elements. We utilize memristors as configurable linear resistors and we propose memristor-based bandpass filters that feature suppression of parasitic frequency pass bands and widening of the desired rejection band. The simulations are performed in the time domain, using LTspice, and the RF/microwave circuits under consideration are modeled by ideal elements available in LTspice