Memcapacitor and Meminductor Circuit Emulators: A Review

This research was funded by the Japanese KAKENHI through Grant Number JP18k04275 and Spanish Ministry of Education, Culture, and Sport (MECD), through Project TEC2017-89955-P and Grant Numbers: FPU16/01451 and FPU16/04043.In 1971, Prof. L. Chua theoretically introduced a new circuit element, which exhibited a different behavior from that displayed by any of the three known passive elements: the resistor, the capacitor or the inductor. This element was called memristor, since its behavior corresponded to a resistor with memory. Four decades later, the concept of mem-elements was extended to the other two circuit elements by the definition of the constitutive equations of both memcapacitors and meminductors. Since then, the non-linear and non-volatile properties of these devices have attracted the interest of many researches trying to develop a wide range of applications. However, the lack of solid-state implementations of memcapacitors and meminductors make it necessary to rely on circuit emulators for the use and investigation of these elements in practical implementations. On this basis, this review gathers the current main alternatives presented in the literature for the emulation of both memcapacitors and meminductors. Different circuit emulators have been thoroughly analyzed and compared in detail, providing a wide range of approaches that could be considered for the implementation of these devices in future designs.Ministry of Education, Culture, Sports, Science and Technology, Japan (MEXT) Japan Society for the Promotion of Science Grants-in-Aid for Scientific Research (KAKENHI) JP18k04275Spanish Ministry of Education, Culture, and Sport (MECD) TEC2017-89955-P FPU16/01451 FPU16/0404

Nonvolatile CMOS memristor, reconfigurable array and its application in power load forecasting

© 2023 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. This is the accepted manuscript version of a conference paper which has been published in final form at https://doi.org/10.1109/TII.2023.3341256The high cost, low yield, and low stability of nano-materials significantly hinder the application and development of memristors. To promote the application of memristors, researchers proposed a variety of memristor emulators to simulate memristor functions and apply them in various fields. However these emulators lack nonvolatile characteristics, limiting their scope of application. This paper proposes an innovative nonvolatile memristor circuit based on complementary metal-oxide-semiconductor (CMOS) technology, expanding the horizons of memristor emulators. The proposed memristor is fabricated in a reconfigurable array architecture using the standard CMOS process, allowing the connection between memristors to be altered by configuring the on-off state of switches. Compared to nano-material memristors, the CMOS nonvolatile memristor circuit proposed in this paper offers advantages of low manufacturing cost and easy mass production, which can promote the application of memristors. The application of the reconfigurable array is further studied by constructing an Echo State Network (ESN) for short-term load forecasting in the power system.Peer reviewe