82 research outputs found
Memristor-based Synaptic Networks and Logical Operations Using In-Situ Computing
We present new computational building blocks based on memristive devices.
These blocks, can be used to implement either supervised or unsupervised
learning modules. This is achieved using a crosspoint architecture which is an
efficient array implementation for nanoscale two-terminal memristive devices.
Based on these blocks and an experimentally verified SPICE macromodel for the
memristor, we demonstrate that firstly, the Spike-Timing-Dependent Plasticity
(STDP) can be implemented by a single memristor device and secondly, a
memristor-based competitive Hebbian learning through STDP using a synaptic network. This is achieved by adjusting the memristor's
conductance values (weights) as a function of the timing difference between
presynaptic and postsynaptic spikes. These implementations have a number of
shortcomings due to the memristor's characteristics such as memory decay,
highly nonlinear switching behaviour as a function of applied voltage/current,
and functional uniformity. These shortcomings can be addressed by utilising a
mixed gates that can be used in conjunction with the analogue behaviour for
biomimetic computation. The digital implementations in this paper use in-situ
computational capability of the memristor.Comment: 18 pages, 7 figures, 2 table
Memristors
This Edited Volume Memristors - Circuits and Applications of Memristor Devices is a collection of reviewed and relevant research chapters, offering a comprehensive overview of recent developments in the field of Engineering. The book comprises single chapters authored by various researchers and edited by an expert active in the physical sciences, engineering, and technology research areas. All chapters are complete in itself but united under a common research study topic. This publication aims at providing a thorough overview of the latest research efforts by international authors on physical sciences, engineering, and technology,and open new possible research paths for further novel developments
Phenomenological Modeling of Memristive Devices
We present a computationally inexpensive yet accurate phenomenological model
of memristive behavior in titanium dioxide devices by fitting experimental
data. By design, the model predicts most accurately I-V relation at small
non-disturbing electrical stresses, which is often the most critical range of
operation for circuit modeling. While the choice of fitting functions is
motivated by the switching and conduction mechanisms of particular titanium
dioxide devices, the proposed modeling methodology is general enough to be
applied to different types of memory devices which feature smooth non-abrupt
resistance switching.Comment: 17 pages, 5 figure
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