181 research outputs found

    A Complementary Resistive Switch-based Crossbar Array Adder

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    Redox-based resistive switching devices (ReRAM) are an emerging class of non-volatile storage elements suited for nanoscale memory applications. In terms of logic operations, ReRAM devices were suggested to be used as programmable interconnects, large-scale look-up tables or for sequential logic operations. However, without additional selector devices these approaches are not suited for use in large scale nanocrossbar memory arrays, which is the preferred architecture for ReRAM devices due to the minimum area consumption. To overcome this issue for the sequential logic approach, we recently introduced a novel concept, which is suited for passive crossbar arrays using complementary resistive switches (CRSs). CRS cells offer two high resistive storage states, and thus, parasitic sneak currents are efficiently avoided. However, until now the CRS-based logic-in-memory approach was only shown to be able to perform basic Boolean logic operations using a single CRS cell. In this paper, we introduce two multi-bit adder schemes using the CRS-based logic-in-memory approach. We proof the concepts by means of SPICE simulations using a dynamical memristive device model of a ReRAM cell. Finally, we show the advantages of our novel adder concept in terms of step count and number of devices in comparison to a recently published adder approach, which applies the conventional ReRAM-based sequential logic concept introduced by Borghetti et al.Comment: 12 pages, accepted for IEEE Journal on Emerging and Selected Topics in Circuits and Systems (JETCAS), issue on Computing in Emerging Technologie

    FPSA: A Full System Stack Solution for Reconfigurable ReRAM-based NN Accelerator Architecture

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    Neural Network (NN) accelerators with emerging ReRAM (resistive random access memory) technologies have been investigated as one of the promising solutions to address the \textit{memory wall} challenge, due to the unique capability of \textit{processing-in-memory} within ReRAM-crossbar-based processing elements (PEs). However, the high efficiency and high density advantages of ReRAM have not been fully utilized due to the huge communication demands among PEs and the overhead of peripheral circuits. In this paper, we propose a full system stack solution, composed of a reconfigurable architecture design, Field Programmable Synapse Array (FPSA) and its software system including neural synthesizer, temporal-to-spatial mapper, and placement & routing. We highly leverage the software system to make the hardware design compact and efficient. To satisfy the high-performance communication demand, we optimize it with a reconfigurable routing architecture and the placement & routing tool. To improve the computational density, we greatly simplify the PE circuit with the spiking schema and then adopt neural synthesizer to enable the high density computation-resources to support different kinds of NN operations. In addition, we provide spiking memory blocks (SMBs) and configurable logic blocks (CLBs) in hardware and leverage the temporal-to-spatial mapper to utilize them to balance the storage and computation requirements of NN. Owing to the end-to-end software system, we can efficiently deploy existing deep neural networks to FPSA. Evaluations show that, compared to one of state-of-the-art ReRAM-based NN accelerators, PRIME, the computational density of FPSA improves by 31x; for representative NNs, its inference performance can achieve up to 1000x speedup.Comment: Accepted by ASPLOS 201

    Reliability Analysis of Memristor Crossbar Routers: Collisions and On/off Ratio Requirement

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    Memristors are commonly used in crossbar arrays as “in-memory computing” elements to solve the von-Neumann bottleneck problem. However, they can also be used as “in-memory routing” elements to configure on-chip interconnection schemes and route signals among computing elements in configurable multi-core neuromorphic processors. While there has been a significant focus on the use of memristive devices as in-memory computing elements, to date, studies on the fundamental reliability properties of memristors as routing elements are still missing. In this paper, we analyze the reliability issues of using these devices in routing crossbar arrays, caused by sharing routing resources (collisions), and undesired pulses due to the leakage paths (on/off ratio requirement). We show that there is a trade-off between routing collision probability and the degree of connectivity (i.e., fan-in) of the receivers sharing routing channels. We provide specifications and guidelines based on a theoretical analysis for engineering the properties of memristive devices, and for designing routing systems based on memristor crossbars

    MFPA: Mixed-Signal Field Programmable Array for Energy-Aware Compressive Signal Processing

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    Compressive Sensing (CS) is a signal processing technique which reduces the number of samples taken per frame to decrease energy, storage, and data transmission overheads, as well as reducing time taken for data acquisition in time-critical applications. The tradeoff in such an approach is increased complexity of signal reconstruction. While several algorithms have been developed for CS signal reconstruction, hardware implementation of these algorithms is still an area of active research. Prior work has sought to utilize parallelism available in reconstruction algorithms to minimize hardware overheads; however, such approaches are limited by the underlying limitations in CMOS technology. Herein, the MFPA (Mixed-signal Field Programmable Array) approach is presented as a hybrid spin-CMOS reconfigurable fabric specifically designed for implementation of CS data sampling and signal reconstruction. The resulting fabric consists of 1) slice-organized analog blocks providing amplifiers, transistors, capacitors, and Magnetic Tunnel Junctions (MTJs) which are configurable to achieving square/square root operations required for calculating vector norms, 2) digital functional blocks which feature 6-input clockless lookup tables for computation of matrix inverse, and 3) an MRAM-based nonvolatile crossbar array for carrying out low-energy matrix-vector multiplication operations. The various functional blocks are connected via a global interconnect and spin-based analog-to-digital converters. Simulation results demonstrate significant energy and area benefits compared to equivalent CMOS digital implementations for each of the functional blocks used: this includes an 80% reduction in energy and 97% reduction in transistor count for the nonvolatile crossbar array, 80% standby power reduction and 25% reduced area footprint for the clockless lookup tables, and roughly 97% reduction in transistor count for a multiplier built using components from the analog blocks. Moreover, the proposed fabric yields 77% energy reduction compared to CMOS when used to implement CS reconstruction, in addition to latency improvements

    Spiking Neural Networks for Inference and Learning: A Memristor-based Design Perspective

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    On metrics of density and power efficiency, neuromorphic technologies have the potential to surpass mainstream computing technologies in tasks where real-time functionality, adaptability, and autonomy are essential. While algorithmic advances in neuromorphic computing are proceeding successfully, the potential of memristors to improve neuromorphic computing have not yet born fruit, primarily because they are often used as a drop-in replacement to conventional memory. However, interdisciplinary approaches anchored in machine learning theory suggest that multifactor plasticity rules matching neural and synaptic dynamics to the device capabilities can take better advantage of memristor dynamics and its stochasticity. Furthermore, such plasticity rules generally show much higher performance than that of classical Spike Time Dependent Plasticity (STDP) rules. This chapter reviews the recent development in learning with spiking neural network models and their possible implementation with memristor-based hardware

    Energy efficient hybrid computing systems using spin devices

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    Emerging spin-devices like magnetic tunnel junctions (MTJ\u27s), spin-valves and domain wall magnets (DWM) have opened new avenues for spin-based logic design. This work explored potential computing applications which can exploit such devices for higher energy-efficiency and performance. The proposed applications involve hybrid design schemes, where charge-based devices supplement the spin-devices, to gain large benefits at the system level. As an example, lateral spin valves (LSV) involve switching of nanomagnets using spin-polarized current injection through a metallic channel such as Cu. Such spin-torque based devices possess several interesting properties that can be exploited for ultra-low power computation. Analog characteristic of spin current facilitate non-Boolean computation like majority evaluation that can be used to model a neuron. The magneto-metallic neurons can operate at ultra-low terminal voltage of ∼20mV, thereby resulting in small computation power. Moreover, since nano-magnets inherently act as memory elements, these devices can facilitate integration of logic and memory in interesting ways. The spin based neurons can be integrated with CMOS and other emerging devices leading to different classes of neuromorphic/non-Von-Neumann architectures. The spin-based designs involve `mixed-mode\u27 processing and hence can provide very compact and ultra-low energy solutions for complex computation blocks, both digital as well as analog. Such low-power, hybrid designs can be suitable for various data processing applications like cognitive computing, associative memory, and currentmode on-chip global interconnects. Simulation results for these applications based on device-circuit co-simulation framework predict more than ∼100x improvement in computation energy as compared to state of the art CMOS design, for optimal spin-device parameters
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