Design and Analysis of a Fibre-Shaped Micro-Actuator for Robotic Gripping

A prototype of an automatic micropositioning system was developed. This prototype uses a shape memory alloy (SMA) actuator, a dedicated PI controller and a piece of software to command a desired motion profile for the actuator. The proposed micropositioning system is characterized by a 4 mm stroke, a 1 μm resolution and a 70 g nominal force and can be commanded directly from a personal computer and without human retroaction. The closed loop positioning resolution (1 μm) is obtained in spite of inaccurate system behaviour during its movement

Design and demonstration of digital pre-distortion using software defined radio

Abstract. High data rates for large number of users set tight requirements for signal quality measured in terms of error vector magnitude (EVM). In radio transmitters, nonlinear distortion dominated by power amplifiers (PAs) often limits the achievable EVM. However, the linearity can be improved by linearization techniques. Digital pre-distortion (DPD) is one of these widely used linearization techniques for an effective distortion reduction over a wide bandwidth. In DPD, the nonlinearity of the transmitter is pre-compensated in the digital domain to achieve linear output. Moreover, DPD is used to enable PAs to operate in the power-efficient region with a decent linearity. As we are moving towards millimetre-wave frequencies to enable the wideband communications, the design of the DPD algorithm must be optimized in terms of performance and power consumption. Moreover, continuous development of wireless infrastructure motivates to make research on programmable and reconfigurable platforms in order to decrease the demonstration cost and time, especially for the demonstration purposes. This thesis illustrates and presents how software defined radio (SDR) platforms can be used to demonstrate DPD. Universal software defined peripheral (USRP) X300 is a commercial software defined radio (SDR) platform. The chosen model, X300, has two independent channels equipped with individual transceiver cards. SIMULINK is used to communicate with the device and the two channels of X300 are used as transmitter and receiver simultaneously in full-duplex mode. Hence, a single USRP device is acting as an operational transmitter and feedback receiver, simultaneously. The implemented USRP design consists of SIMULINK based transceiver design and lookup table based DPD in which the coefficients are calculated in MATLAB offline. An external PA, i.e. ZFL-2000+ together with a directional coupler and attenuator are connected between the TX/RX port and RX2 port to measure the nonlinearity. The nonlinearity transceiver is measured with and without the external PA. The experimental results show decent performance for linearization by using the USRP platform. However, the results differ widely due to the used USRP transceiver parameterization and PA operational point. The 16 QAM test signal with 500 kHz bandwidth is fed to the USRP transmit chain. As an example, the DPD algorithm improves the EVM from 7.6% to 2.1% and also the ACPR is reduced around 10 dB with the 16 QAM input signal where approximately + 2.2 dBm input power applied to the external PA

Caracterização, modelação e compensação de efeitos de memória lenta em amplificadores de potência baseados em GAN HEMTS

Gallium nitride (GaN) high-electron-mobility transistors (HEMTs) have emerged as the most compelling technology for the transmission of highpower radio-frequency (RF) signals for cellular mobile communications and radar applications. However, despite their remarkable power capabilities, the deployment of GaN HEMT-based RF power amplifiers (PAs) in the mobile communications infrastructure is often ruled out in favor of alternative siliconbased technologies. One of the main reasons for this is the pervasiveness of nonlinear long-term memory effects in GaN HEMT technology caused by thermal and charge-trapping phenomena. While these effects can be compensated for using sophisticated digital predistortion algorithms, their implementation and model-extraction complexity—as well as the power necessary for their real-time execution—make them unsuitable for modern small cells and large-scale multiple-input multiple-output transceivers, where the power necessary for the linearization of each amplification element is of great concern. In order to address these issues and further the deployment of high-powerdensity high-efficiency GaN HEMT-based RF PAs in next-generation communications and radar applications, in this thesis we propose novel methods for the characterization, modeling, and compensation of long-term memory effects in GaN HEMT-based RF PAs. More specifically, we propose a method for the characterization of the dynamic self-biasing behavior of GaN HEMTbased RF PAs; multiple behavioral models of charge trapping and their implementation as analog electronic circuits for the accurate real-time prediction of the dynamic variation of the threshold voltage of GaN HEMTs; a method for the compensation of the pulse-to-pulse instability of GaN HEMT-based RF PAs for radar applications; and a hybrid analog/digital scheme for the linearization of GaN HEMT-based RF PAs for next-generation communications applications.Os transístores de alta mobilidade eletrónica de nitreto de gálio (GaN HEMTs) são considerados a tecnologia mais atrativa para a transmissão de sinais de radiofrequência de alta potência para comunicações móveis celulares e aplicações de radar. No entanto, apesar das suas notáveis capacidades de transmissão de potência, a utilização de amplificadores de potência (PAs) baseados em GaN HEMTs é frequentemente desconsiderada em favor de tecnologias alternativas baseadas em transístores de silício. Uma das principais razões disto acontecer é a existência pervasiva na tecnologia GaN HEMT de efeitos de memória lenta causados por fenómenos térmicos e de captura eletrónica. Apesar destes efeitos poderem ser compensados através de algoritmos sofisticados de predistorção digital, estes algoritmos não são adequados para transmissores modernos de células pequenas e interfaces massivas de múltipla entrada e múltipla saída devido à sua complexidade de implementação e extração de modelo, assim como a elevada potência necessária para a sua execução em tempo real. De forma a promover a utilização de PAs de alta densidade de potência e elevada eficiência baseados em GaN HEMTs em aplicações de comunicação e radar de nova geração, nesta tese propomos novos métodos de caracterização, modelação, e compensação de efeitos de memória lenta em PAs baseados em GaN HEMTs. Mais especificamente, nesta tese propomos um método de caracterização do comportamento dinâmico de autopolarização de PAs baseados em GaN HEMTs; vários modelos comportamentais de fenómenos de captura eletrónica e a sua implementação como circuitos eletrónicos analógicos para a previsão em tempo real da variação dinâmica da tensão de limiar de condução de GaN HEMTs; um método de compensação da instabilidade entre pulsos de PAs baseados em GaN HEMTs para aplicações de radar; e um esquema híbrido analógico/digital de linearização de PAs baseados em GaN HEMTs para comunicações de nova geração.Programa Doutoral em Telecomunicaçõe

High Temperature Characterization of Ge2Sb2Te5Thin Films for Phase Change Memory Applications

The recent proliferation of portable communication devices or data storage equipment is strongly related to the development of memory technology. Non-volatile semiconductor solid-state memories are needed for high-capacity storage media, high-speed operation and low power consumption, with stringent requirements of retention and endurance. Phase change memory (PCM) is currently seen as one of the most promising candidates for a future storage-class memory with the potential to be close to dynamic random-access memory (DRAM) in speed but with much longer retention times and as dense as flash memory. PCM devices utilize chalcogenide materials (most commonly Ge2Sb2Te5 or GST) that can be switched rapidly and reversibly between amorphous and crystalline phases with orders of magnitude difference in electrical resistivity. Since PCM devices operate at elevated (current-induced) temperatures and are significantly impacted by thermoelectric effects it is very important to determine the high temperature material properties of GST. Resistivity, carrier mobility, and carrier concentration in semiconducting materials are three key parameters indispensable for device modeling. In this work two measurement setups for high temperature thin film characterizations were developed, a Seebeck setup and a Hall setup. The Seebeck coefficient measurement setup is fully automated and uses resistive and inductive heaters to control the temperature gradient and can reach temperatures up to ~650 °C. The Hall measurement setup, developed based on the van der Paw method for characterization of semiconducting thin films, can measure thin film samples of a wide resistivity range from room temperature to ~500 °C. The resistivity, carrier concentration, and Hall carrier mobility are calculated from I-V measurements and the constant magnetic field applied in ‘up’ and ‘down’ directions. Measurement results on GST thin films with different thicknesses revealed interesting correlations between S-T and ρ-T characteristics and showed that GST behaves as a unipolar p-type semiconducting material from room temperature up to melting. The thermoelectric properties of the GST films were also correlated to the average grain sizes obtained from in-situ XRD measurements during crystallization. These studies show that the activation energy of carriers in mixed phase amorphous-fcc GST is a linear function of the Peltier coefficient. From these results and the ρ-T characteristics, the expected Seebeck coefficient of single crystal fcc GST is obtained. Using the experimental results for resistivity and Seebeck coefficient, together with a phase separation model, the temperature-dependent thermal conductivity of the mixed phase GST is extracted

Clock Jitter in Communication Systems

For reliable digital communication between devices, the sources that contribute to data sampling errors must be properly modeled and understood. Clock jitter is one such error source occurring during data transfer between integrated circuits. Clock jitter is a noise source in a communication link similar to electrical noise, but is a time domain noise variable affecting many different parts of the sampling process. Presented in this dissertation, the clock jitter effect on sampling is modeled for communication systems with the degree of accuracy needed for modern high speed data communication. The models developed and presented here have been used to develop the clocking specifications and silicon budgets for industry standards such as PCI Express, USB3.0, GDDR5 Memory, and HBM Memory interfaces

Doctor of Philosophy

dissertationRefractive errors of vision are very common in all human beings, namely myopia, hyperopia, presbyopia, and astigmatism. Worldwide, over 1 billion people were estimated to suffer from presbyopia with around 410 million of them suffering from near vision loss. The result of refractive errors is blurred vision, affecting our ability to focus on near or far objects. The utilization of conventional fixed, uniform, or graded power eyeglasses is generally unsatisfactory as fixed power eyepieces cannot provide any accommodation restoration. In this dissertation, we demonstrate compact tunable-focus liquid lenses suitable for ophthalmic adaptive eyeglasses. These lightweight, low footprint tunable-focus lenses augment the accommodation range of vision, thus restoring normal vision function. First, a tunable-focus large aperture liquid lens is constructed using shape memory alloy (SMA) springs as actuators. The lens mainly consists of a shallow liquid-filled cylindrical cavity bound by a thin compressible annular rim and encapsulated by a flexible circular membrane on the top of the rim and a rigid circular plate at the rim bottom. The lens optical power is adjusted by a controlled compression of the annular rim in vertical direction via actuation of the three shape memory alloy (SMA) springs. Second, we report a compact tunable-focus liquid lens with large aperture actuated by piezo-electric bimorph actuators. The lens consists of a rigid annular sealing rim encapsulated by two membranes forming a sealed chamber with a fixed volume of high index optical fluid filled in it. When a normal force is applied to the bottom piston via piezo-electric bimorph actuators, the shape of the top membrane is changed, causing the change of focal length. We did the simulation using Python to improve the lens optical quality, and lens parameters were determined from the simulation. While simulation and fabrication of the tunable-focus liquid lens using piezo-electric bimorph actuators, we noticed the effect of tension over lens membrane to determine lens optical power and optical quality. This gave us the idea of implementing tunable-focus liquid lens by changing the tension of the membrane. The theory, simulation, fabrication, and experimentation for these three different lenses are discussed in this dissertation

Concurrent Multi-Band Envelope Tracking Power Amplifiers for Emerging Wireless Communications

Emerging wireless communication is shifting toward data-centric broadband services, resulting in employment of sophisticated and spectrum efficient modulation and access techniques. This yields communication signals with large peak-to-average power ratios (PAPR) and stringent linearity requirements. For example, future wireless communication standard, such as long term evolution advanced (LTE-A) require adoption of carrier aggregation techniques to improve their effective modulation bandwidth. The carrier aggregation technique for LTE-A incorporates multiple carriers over a wide frequency range to create a wider bandwidth of up to 100MHz. This will require future power amplifiers (PAs) and transmitters to efficiently amplify concurrent multi-band signals with large PAPR, while maintaining good linearity. Different back-off efficiency enhancement techniques are available, such as envelope tracking (ET) and Doherty. ET has gained a lot of attention recently as it can be applied to both base station and mobile transmitters. Unfortunately, few publications have investigated concurrent multi-band amplification using ET PAs, mainly due to the limited bandwidth of the envelope amplifier. In this thesis, a novel approach to enable concurrent amplification of multi-band signals using a single ET PA will be presented. This thesis begins by studying the sources of nonlinearities in single-band and dual-band PAs. Based on the analysis, a design methodology is proposed to reduce the sources of memory effects in single-band and dual-band PAs from the circuit design stage and improve their linearizability. Using the proposed design methodology, a 45W GaN PA was designed. The PA was linearized using easy to implement, memoryless digital pre-distortion (DPD) with 8 and 28 coefficients when driven with single-band and dual-band signals, respectively. This analysis and design methodology will enable the design of PAs with reduced memory effects, which can be linearized using simple, power efficient linearization techniques, such as lookup table or memoryless polynomial DPD. Note that the power dissipation of the linearization engine becomes crucial as we move toward smaller base station cells, such as femto- and pico-cells, where complicated DPD models cannot be implemented due to their significant power overhead. This analysis is also very important when implementing a multi-band ET PA system, where the sources of memory effects in the PA itself are minimized through the proposed design methodology. Next, the principle of concurrent dual-band ET operation using the low frequency component (LFC) of the envelope of the dual-band signal is presented. The proposed dual-band ET PA modulates the drain voltage of the PA using the LFC of the envelope of the dual-band signal. This will enable concurrent dual-band operation of the ET PA without posing extra bandwidth requirements on the envelope amplifier. A detailed efficiency and linearity analysis of the dual-band ET PA is also presented. Furthermore, a new dual-band DPD model with supply dependency is proposed in this thesis, capable of capturing and compensating for the sources of distortion in the dual-band ET PA. To the best of our knowledge, concurrent dual-band operation of ET PAs using the LFC of the envelope of the dual-band signal is presented for the first time in the literature. The proposed dual-band ET operation is validated using the measurement results of two GaN ET PA prototypes. Lastly, the principle of concurrent dual-band ET operation is extended to multi-band signals using the LFC of the envelope of the multi-band signal. The proposed multi-band ET operation is validated using the measurement results of a tri-band ET PA. To the best of our knowledge, this is the first reported tri-band ET PA in literature. The tri-band ET PA is linearized using a new tri-band DPD model with supply dependency

Ferroelectrics

Ferroelectric materials exhibit a wide spectrum of functional properties, including switchable polarization, piezoelectricity, high non-linear optical activity, pyroelectricity, and non-linear dielectric behaviour. These properties are crucial for application in electronic devices such as sensors, microactuators, infrared detectors, microwave phase filters and, non-volatile memories. This unique combination of properties of ferroelectric materials has attracted researchers and engineers for a long time. This book reviews a wide range of diverse topics related to the phenomenon of ferroelectricity (in the bulk as well as thin film form) and provides a forum for scientists, engineers, and students working in this field. The present book containing 24 chapters is a result of contributions of experts from international scientific community working in different aspects of ferroelectricity related to experimental and theoretical work aimed at the understanding of ferroelectricity and their utilization in devices. It provides an up-to-date insightful coverage to the recent advances in the synthesis, characterization, functional properties and potential device applications in specialized areas

Skybridge: 3-D Integrated Circuit Technology Alternative to CMOS

Continuous scaling of CMOS has been the major catalyst in miniaturization of integrated circuits (ICs) and crucial for global socio-economic progress. However, scaling to sub-20nm technologies is proving to be challenging as MOSFETs are reaching their fundamental limits and interconnection bottleneck is dominating IC operational power and performance. Migrating to 3-D, as a way to advance scaling, has eluded us due to inherent customization and manufacturing requirements in CMOS that are incompatible with 3-D organization. Partial attempts with die-die and layer-layer stacking have their own limitations. We propose a 3-D IC fabric technology, Skybridge[TM], which offers paradigm shift in technology scaling as well as design. We co-architect Skybridge's core aspects, from device to circuit style, connectivity, thermal management, and manufacturing pathway in a 3-D fabric-centric manner, building on a uniform 3-D template. Our extensive bottom-up simulations, accounting for detailed material system structures, manufacturing process, device, and circuit parasitics, carried through for several designs including a designed microprocessor, reveal a 30-60x density, 3.5x performance per watt benefits, and 10X reduction in interconnect lengths vs. scaled 16-nm CMOS. Fabric-level heat extraction features are shown to successfully manage IC thermal profiles in 3-D. Skybridge can provide continuous scaling of integrated circuits beyond CMOS in the 21st century.Comment: 53 Page