11,788 research outputs found
Dynamic modal analysis of monolithic mode-locked semiconductor lasers
We analyze the advantages and applicability limits of the mode-coupling approach to active, passive, hybrid, and harmonic mode-locking in diode lasers. A simple, computationally efficient numerical model is proposed and applied to several traditional and advanced laser constructions and regimes, including high-frequency pulse emission by symmetric and asymmetric colliding pulse mode-locking, and locking properties of hybrid modelocked Fabry–Perot and distributed Bragg reflector lasers
Noise equivalent circuit of a semiconductor laser diode
The noise equivalent circuit of a semiconductor laser diode is derived from the rate equations including Langevin noise sources. This equivalent circuit allows a straightforward calculation of the noise and modulation characteristics of a laser diode combined with electronic components. The intrinsic junction voltage noise spectrum and the light intensity fluctuation of a current driven laser diode are calculated as a function of bias current and frequency
Numerical Modeling of the Emission Characteristics of Semiconductor Quantum Dash Materials for Lasers and Optical Amplifiers
This paper deals with the simulation of the emission characteristics of self-assembled semiconductor quantum dash (QDash) active materials, characterized by high length-to-width and width-to-height ratios of the dash size and by a wide spreading of the dash dimensions. This significant size fluctuation requires to compute numerically the corresponding energy distribution of the electron and hole confined states. Furthermore, due to the long dash length, it is necessary to take into account the many longitudinal confined states that contribute to the emission spectrum. To implement a model that does not require excessive computation time, some simplifying assumptions have been introduced and validated numerically. Starting from good knowledge of the dash size, material composition, and optical waveguide dimensions, we have been able to simulate the amplified spontaneous emission and gain spectra of a quantum dash semiconductor optical amplifier with a good quantitative agreement with the measured data. As an application example, the model is used to predict the gain properties of different QDash ensembles having various size distributions
Judiciously distributing laser emitters to shape the desired far field patterns
The far-field pattern of a simple one-dimensional laser array of emitters
radiating into free space is considered. In the path of investigating the
inverse problem for their near fields leading to a target beam form,
surprisingly we found that the result is successful when the matrix of the
corresponding linear system is not well-scaled. The essence of our numerical
observations is captured by an elegant inequality defining the functional range
of the optical distance between two neighboring emitters. Our finding can
restrict substantially the parametric space of integrated photonic systems and
simplify significantly the subsequent optimizations
Classical solutions of drift-diffusion equations for semiconductor devices: the 2d case
We regard drift-diffusion equations for semiconductor devices in Lebesgue
spaces. To that end we reformulate the (generalized) van Roosbroeck system as
an evolution equation for the potentials to the driving forces of the currents
of electrons and holes. This evolution equation falls into a class of
quasi-linear parabolic systems which allow unique, local in time solution in
certain Lebesgue spaces. In particular, it turns out that the divergence of the
electron and hole current is an integrable function. Hence, Gauss' theorem
applies, and gives the foundation for space discretization of the equations by
means of finite volume schemes. Moreover, the strong differentiability of the
electron and hole density in time is constitutive for the implicit time
discretization scheme. Finite volume discretization of space, and implicit time
discretization are accepted custom in engineering and scientific
computing.--This investigation puts special emphasis on non-smooth spatial
domains, mixed boundary conditions, and heterogeneous material compositions, as
required in electronic device simulation
Q-factor and emission pattern control of the WG modes in notched microdisk resonators
Two-dimensional (2-D) boundary integral equation analysis of a notched
circular microdisk resonator is presented. Results obtained provide accurate
description of optical modes, free from the staircasing and discretization
errors of other numerical techniques. Splitting of the double degenerate
Whispering-Gallery (WG) modes and directional light output is demonstrated. The
effect of the notch depth and width on the resonance wavelengths, Q-factors,
and emission patterns is studied. Further improvement of the directionality is
demonstrated in an elliptical notched microdisk. Applications of the notched
resonators to the design of microdisk lasers, oscillators, and biosensors are
discussed.Comment: 7 pages with 11 figures; to appear in IEEE J. Select. Topics Quantum.
Electron., Jan/Feb 200
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