14 research outputs found

    ΠŸΠΎΡΡ‚Ρ€ΠΎΠ΅Π½ΠΈΠ΅ ΠΈ ΠΏΡ€ΠΈΠΌΠ΅Π½Π΅Π½ΠΈΠ΅ ΠΌΠ°Ρ€ΡˆΠ΅Π²Ρ‹Ρ… тСстов для обнаруТСния ΠΊΠΎΠ΄ΠΎΡ‡ΡƒΠ²ΡΡ‚Π²ΠΈΡ‚Π΅Π»ΡŒΠ½Ρ‹Ρ… нСисправностСй Π·Π°ΠΏΠΎΠΌΠΈΠ½Π°ΡŽΡ‰ΠΈΡ… устройств

    Get PDF
    The urgency of the problem of testing storage devices of modern computer systems is shown. The mathematical models of their faults and the methods used for testing the most complex cases by classical march tests are investigated. Passive pattern sensitive faults (PNPSFk) are allocated, in which arbitrary k from N memory cells participate, where k << N, and N is the memory capacity in bits. For these faults, analytical expressions are given for the minimum and maximum fault coverage that is achievable within the march tests. The concept of a primitive is defined, which describes in terms of march test elements the conditions for activation and fault detection of PNPSFk of storage devices. Examples of march tests with maximum fault coverage, as well as march tests with a minimum time complexity equal to 18N are given. The efficiency of a single application of tests such as MATS ++, March Cβˆ’ and March PS is investigated for different number of k ≀ 9 memory cells involved in PNPSFk fault. The applicability of multiple testing with variable address sequences is substantiated, when the use of random sequences of addresses is proposed. Analytical expressions are given for the fault coverage of complex PNPSFk faults depending on the multiplicity of the test. In addition, the estimates of the mean value of the multiplicity of the MATS++, March Cβˆ’ and March PS tests, obtained on the basis of a mathematical model describing the problem of the coupon collector, and ensuring the detection of all k2k PNPSFk faults are given. The validity of analytical estimates is experimentally shown and the high efficiency of PNPSFk fault detection is confirmed by tests of the March PS type.ΠŸΠΎΠΊΠ°Π·Ρ‹Π²Π°Π΅Ρ‚ΡΡ Π°ΠΊΡ‚ΡƒΠ°Π»ΡŒΠ½ΠΎΡΡ‚ΡŒ Π·Π°Π΄Π°Ρ‡ΠΈ тСстирования Π·Π°ΠΏΠΎΠΌΠΈΠ½Π°ΡŽΡ‰ΠΈΡ… устройств соврСмСнных Π²Ρ‹Ρ‡ΠΈΡΠ»ΠΈΡ‚Π΅Π»ΡŒΠ½Ρ‹Ρ… систСм. Π˜ΡΡΠ»Π΅Π΄ΡƒΡŽΡ‚ΡΡ матСматичСскиС ΠΌΠΎΠ΄Π΅Π»ΠΈ нСисправностСй Π·Π°ΠΏΠΎΠΌΠΈΠ½Π°ΡŽΡ‰ΠΈΡ… устройств ΠΈ ΠΈΡΠΏΠΎΠ»ΡŒΠ·ΡƒΠ΅ΠΌΡ‹Π΅ ΠΌΠ΅Ρ‚ΠΎΠ΄Ρ‹ тСстирования Π½Π°ΠΈΠ±ΠΎΠ»Π΅Π΅ слоТных ΠΈΠ· Π½ΠΈΡ… Π½Π° Π±Π°Π·Π΅ классичСских ΠΌΠ°Ρ€ΡˆΠ΅Π²Ρ‹Ρ… тСстов. Π’Ρ‹Π΄Π΅Π»ΡΡŽΡ‚ΡΡ пассивныС ΠΊΠΎΠ΄ΠΎΡ‡ΡƒΠ²ΡΡ‚Π²ΠΈΡ‚Π΅Π»ΡŒΠ½Ρ‹Π΅ нСисправности (PNPSFk), Π² ΠΊΠΎΡ‚ΠΎΡ€Ρ‹Ρ… ΡƒΡ‡Π°ΡΡ‚Π²ΡƒΡŽΡ‚ ΠΏΡ€ΠΎΠΈΠ·Π²ΠΎΠ»ΡŒΠ½Ρ‹Π΅ k ΠΈΠ· N ячССк памяти, Π³Π΄Π΅ k << N, Π° N прСдставляСт собой Π΅ΠΌΠΊΠΎΡΡ‚ΡŒ памяти Π² Π±ΠΈΡ‚Π°Ρ…. Для этих нСисправностСй приводятся аналитичСскиС выраТСния минимальной ΠΈ максимальной ΠΏΠΎΠ»Π½ΠΎΡ‚Ρ‹ покрытия, ΠΊΠΎΡ‚ΠΎΡ€Ρ‹Π΅ достиТимы Π² Ρ€Π°ΠΌΠΊΠ°Ρ… ΠΌΠ°Ρ€ΡˆΠ΅Π²Ρ‹Ρ… тСстов. ΠžΠΏΡ€Π΅Π΄Π΅Π»ΡΠ΅Ρ‚ΡΡ понятиС ΠΏΡ€ΠΈΠΌΠΈΡ‚ΠΈΠ²Π°, ΠΎΠΏΠΈΡΡ‹Π²Π°ΡŽΡ‰Π΅Π³ΠΎ Π² Ρ‚Π΅Ρ€ΠΌΠΈΠ½Π°Ρ… элСмСнтов ΠΌΠ°Ρ€ΡˆΠ΅Π²ΠΎΠ³ΠΎ тСста условия Π°ΠΊΡ‚ΠΈΠ²ΠΈΠ·Π°Ρ†ΠΈΠΈ ΠΈ обнаруТСния нСисправностСй PNPSFk Π·Π°ΠΏΠΎΠΌΠΈΠ½Π°ΡŽΡ‰ΠΈΡ… устройств. ΠŸΡ€ΠΈΠ²ΠΎΠ΄ΡΡ‚ΡΡ ΠΏΡ€ΠΈΠΌΠ΅Ρ€Ρ‹ построСния ΠΌΠ°Ρ€ΡˆΠ΅Π²Ρ‹Ρ… тСстов, ΠΈΠΌΠ΅ΡŽΡ‰ΠΈΡ… ΠΌΠ°ΠΊΡΠΈΠΌΠ°Π»ΡŒΠ½ΡƒΡŽ ΠΏΠΎΠ»Π½ΠΎΡ‚Ρƒ покрытия, Π° Ρ‚Π°ΠΊΠΆΠ΅ ΠΌΠ°Ρ€ΡˆΠ΅Π²Ρ‹Ρ… тСстов с минимальной Π²Ρ€Π΅ΠΌΠ΅Π½Π½ΠΎΠΉ ΡΠ»ΠΎΠΆΠ½ΠΎΡΡ‚ΡŒΡŽ, Ρ€Π°Π²Π½ΠΎΠΉ 18N. Π˜ΡΡΠ»Π΅Π΄ΡƒΠ΅Ρ‚ΡΡ ΡΡ„Ρ„Π΅ΠΊΡ‚ΠΈΠ²Π½ΠΎΡΡ‚ΡŒ ΠΎΠ΄Π½ΠΎΠΊΡ€Π°Ρ‚Π½ΠΎΠ³ΠΎ примСнСния тСстов Ρ‚ΠΈΠΏΠ° MATS++, March Cβˆ’ ΠΈ March PS для Ρ€Π°Π·Π»ΠΈΡ‡Π½ΠΎΠ³ΠΎ количСства k ≀ 9 ячССк памяти, ΡƒΡ‡Π°ΡΡ‚Π²ΡƒΡŽΡ‰ΠΈΡ… Π² нСисправности PNPSFk. ΠžΠ±ΠΎΡΠ½ΠΎΠ²Ρ‹Π²Π°Π΅Ρ‚ΡΡ ΠΏΡ€ΠΈΠΌΠ΅Π½ΠΈΠΌΠΎΡΡ‚ΡŒ ΠΌΠ½ΠΎΠ³ΠΎΠΊΡ€Π°Ρ‚Π½ΠΎΠ³ΠΎ тСстирования с измСняСмыми адрСсными ΠΏΠΎΡΠ»Π΅Π΄ΠΎΠ²Π°Ρ‚Π΅Π»ΡŒΠ½ΠΎΡΡ‚ΡΠΌΠΈ, Π² качСствС ΠΊΠΎΡ‚ΠΎΡ€Ρ‹Ρ… прСдлагаСтся ΠΏΡ€ΠΈΠΌΠ΅Π½ΡΡ‚ΡŒ случайныС ΠΏΠΎΡΠ»Π΅Π΄ΠΎΠ²Π°Ρ‚Π΅Π»ΡŒΠ½ΠΎΡΡ‚ΠΈ адрСсов. ΠŸΡ€ΠΈΠ²ΠΎΠ΄ΡΡ‚ΡΡ аналитичСскиС выраТСния для ΠΏΠΎΠ»Π½ΠΎΡ‚Ρ‹ покрытия слоТных нСисправностСй PNPSFk Π² зависимости ΠΎΡ‚ кратности тСста. ΠšΡ€ΠΎΠΌΠ΅ Ρ‚ΠΎΠ³ΠΎ, Π΄Π°ΡŽΡ‚ΡΡ ΠΎΡ†Π΅Π½ΠΊΠΈ срСднСго значСния кратности тСстов MATS++, March Cβˆ’ ΠΈ March PS, ΠΏΠΎΠ»ΡƒΡ‡Π΅Π½Π½Ρ‹Π΅ Π½Π° основании матСматичСской ΠΌΠΎΠ΄Π΅Π»ΠΈ, которая описываСт Π·Π°Π΄Π°Ρ‡Ρƒ собиратСля ΠΊΡƒΠΏΠΎΠ½ΠΎΠ², ΠΈ ΠΎΠ±Π΅ΡΠΏΠ΅Ρ‡ΠΈΠ²Π°ΡŽΡ‰ΠΈΠ΅ ΠΎΠ±Π½Π°Ρ€ΡƒΠΆΠ΅Π½ΠΈΠ΅ всСх k2k нСисправностСй PNPSFk. Π­ΠΊΡΠΏΠ΅Ρ€ΠΈΠΌΠ΅Π½Ρ‚Π°Π»ΡŒΠ½ΠΎ показываСтся ΡΠΏΡ€Π°Π²Π΅Π΄Π»ΠΈΠ²ΠΎΡΡ‚ΡŒ аналитичСских ΠΎΡ†Π΅Π½ΠΎΠΊ ΠΈ подтвСрТдаСтся высокая ΡΡ„Ρ„Π΅ΠΊΡ‚ΠΈΠ²Π½ΠΎΡΡ‚ΡŒ обнаруТСния нСисправностСй PNPSFk тСстами Ρ‚ΠΈΠΏΠ° March PS

    Анализ ΠΈ синтСз ΠΌΠ°Ρ€ΡˆΠ΅Π²Ρ‹Ρ… тСстов Π·Π°ΠΏΠΎΠΌΠΈΠ½Π°ΡŽΡ‰ΠΈΡ… устройств

    Get PDF
    The paper shows the relevance of testing storage devices in modern computing systems. Mathematical models of memory device faults and the efficiency of their detection, in particular, complex pattern sensitive faults of the PNPSFk type, based on classical march memory tests are presented. Limit estimates are given for the completeness of coverage of such faults depending on the number of memory cells involved in the fault. The necessity of synthesis of memory march tests characterized by high efficiency of PNPSFk failure detection is substantiated. The concept of a primitive providing conditions for activation and detection of various types of PNPSFk is defined. Examples of analysis and synthesis of memory march tests with different coverage of PNPSFk faults are given. The March OP memory test is synthesized, which is characterized by the maximum completeness of PNPSFk fault coverage and has the lowest time complexity compared to the known memory march tests, which provide the same comprehensiveness of coverage of complex memory device faults.Π’ ΡΡ‚Π°Ρ‚ΡŒΠ΅ показываСтся Π°ΠΊΡ‚ΡƒΠ°Π»ΡŒΠ½ΠΎΡΡ‚ΡŒ тСстирования Π·Π°ΠΏΠΎΠΌΠΈΠ½Π°ΡŽΡ‰ΠΈΡ… устройств соврСмСнных Π²Ρ‹Ρ‡ΠΈΡΠ»ΠΈΡ‚Π΅Π»ΡŒΠ½Ρ‹Ρ… систСм. ΠŸΡ€Π΅Π΄ΡΡ‚Π°Π²Π»ΡΡŽΡ‚ΡΡ матСматичСскиС ΠΌΠΎΠ΄Π΅Π»ΠΈ нСисправностСй Π·Π°ΠΏΠΎΠΌΠΈΠ½Π°ΡŽΡ‰ΠΈΡ… устройств ΠΈ ΡΡ„Ρ„Π΅ΠΊΡ‚ΠΈΠ²Π½ΠΎΡΡ‚ΡŒ ΠΈΡ… обнаруТСния, Π² частности, слоТных ΠΊΠΎΠ΄ΠΎΡ‡ΡƒΠ²ΡΡ‚Π²ΠΈΡ‚Π΅Π»ΡŒΠ½Ρ‹Ρ… нСисправностСй Ρ‚ΠΈΠΏΠ° PNPSFk, Π½Π° Π±Π°Π·Π΅ классичСских ΠΌΠ°Ρ€ΡˆΠ΅Π²Ρ‹Ρ… тСстов. ΠŸΡ€ΠΈΠ²ΠΎΠ΄ΡΡ‚ΡΡ ΠΏΡ€Π΅Π΄Π΅Π»ΡŒΠ½Ρ‹Π΅ ΠΎΡ†Π΅Π½ΠΊΠΈ ΠΏΠΎΠ»Π½ΠΎΡ‚Ρ‹ покрытия ΠΏΠΎΠ΄ΠΎΠ±Π½Ρ‹Ρ… нСисправностСй Π² зависимости ΠΎΡ‚ количСства Π·Π°ΠΏΠΎΠΌΠΈΠ½Π°ΡŽΡ‰ΠΈΡ… ячССк, ΡƒΡ‡Π°ΡΡ‚Π²ΡƒΡŽΡ‰ΠΈΡ… Π² нСисправности. ΠžΠ±ΠΎΡΠ½ΠΎΠ²Ρ‹Π²Π°Π΅Ρ‚ΡΡ Π½Π΅ΠΎΠ±Ρ…ΠΎΠ΄ΠΈΠΌΠΎΡΡ‚ΡŒ синтСза ΠΌΠ°Ρ€ΡˆΠ΅Π²Ρ‹Ρ… тСстов, Ρ…Π°Ρ€Π°ΠΊΡ‚Π΅Ρ€ΠΈΠ·ΡƒΡŽΡ‰ΠΈΡ…ΡΡ высокой ΡΡ„Ρ„Π΅ΠΊΡ‚ΠΈΠ²Π½ΠΎΡΡ‚ΡŒΡŽ обнаруТСния PNPSFk нСисправностСй. ΠžΠΏΡ€Π΅Π΄Π΅Π»ΡΠ΅Ρ‚ΡΡ понятиС ΠΏΡ€ΠΈΠΌΠΈΡ‚ΠΈΠ²Π°, ΠΎΠ±Π΅ΡΠΏΠ΅Ρ‡ΠΈΠ²Π°ΡŽΡ‰Π΅Π³ΠΎ условия Π°ΠΊΡ‚ΠΈΠ²ΠΈΠ·Π°Ρ†ΠΈΠΈ ΠΈ обнаруТСния Ρ€Π°Π·Π»ΠΈΡ‡Π½Ρ‹Ρ… Π²ΠΈΠ΄ΠΎΠ² PNPSFk. ΠŸΡ€ΠΈΠ²ΠΎΠ΄ΡΡ‚ΡΡ ΠΏΡ€ΠΈΠΌΠ΅Ρ€Ρ‹ Π°Π½Π°Π»ΠΈΠ·Π° ΠΈ синтСза ΠΌΠ°Ρ€ΡˆΠ΅Π²Ρ‹Ρ… тСстов, ΠΈΠΌΠ΅ΡŽΡ‰ΠΈΡ… Ρ€Π°Π·Π»ΠΈΡ‡Π½ΡƒΡŽ ΠΏΠΎΠ»Π½ΠΎΡ‚Ρƒ покрытия PNPSFk нСисправностСй. БинтСзируСтся ΠΌΠ°Ρ€ΡˆΠ΅Π²Ρ‹ΠΉ тСст March OP, Ρ…Π°Ρ€Π°ΠΊΡ‚Π΅Ρ€ΠΈΠ·ΡƒΡŽΡ‰ΠΈΠΉΡΡ максимальной ΠΏΠΎΠ»Π½ΠΎΡ‚ΠΎΠΉ покрытия нСисправностСй PNPSFk ΠΈ ΠΈΠΌΠ΅ΡŽΡ‰ΠΈΠΉ ΠΌΠΈΠ½ΠΈΠΌΠ°Π»ΡŒΠ½ΡƒΡŽ Π²Ρ€Π΅ΠΌΠ΅Π½Π½ΡƒΡŽ ΡΠ»ΠΎΠΆΠ½ΠΎΡΡ‚ΡŒ ΠΏΠΎ ΡΡ€Π°Π²Π½Π΅Π½ΠΈΡŽ с извСстными ΠΌΠ°Ρ€ΡˆΠ΅Π²Ρ‹ΠΌΠΈ тСстами, ΠΎΠ±Π΅ΡΠΏΠ΅Ρ‡ΠΈΠ²Π°ΡŽΡ‰ΠΈΠΌΠΈ Ρ‚Π°ΠΊΡƒΡŽ ΠΆΠ΅ ΠΏΠΎΠ»Π½ΠΎΡ‚Ρƒ покрытия слоТных нСисправностСй Π·Π°ΠΏΠΎΠΌΠΈΠ½Π°ΡŽΡ‰ΠΈΡ… устройств.

    Анализ ΠΈ синтСз ΠΌΠ°Ρ€ΡˆΠ΅Π²Ρ‹Ρ… тСстов Π·Π°ΠΏΠΎΠΌΠΈΠ½Π°ΡŽΡ‰ΠΈΡ… устройств

    Get PDF
    Π’ ΡΡ‚Π°Ρ‚ΡŒΠ΅ показываСтся Π°ΠΊΡ‚ΡƒΠ°Π»ΡŒΠ½ΠΎΡΡ‚ΡŒ тСстирования Π·Π°ΠΏΠΎΠΌΠΈΠ½Π°ΡŽΡ‰ΠΈΡ… устройств соврСмСнных Π²Ρ‹Ρ‡ΠΈΡΠ»ΠΈΡ‚Π΅Π»ΡŒΠ½Ρ‹Ρ… систСм. ΠŸΡ€Π΅Π΄ΡΡ‚Π°Π²Π»ΡΡŽΡ‚ΡΡ матСматичСскиС ΠΌΠΎΠ΄Π΅Π»ΠΈ слоТных ΠΊΠΎΠ΄ΠΎΡ‡ΡƒΠ²ΡΡ‚Π²ΠΈΡ‚Π΅Π»ΡŒΠ½Ρ‹Ρ… нСисправностСй Ρ‚ΠΈΠΏΠ° PNPSFk, Π½Π° Π±Π°Π·Π΅ классичСских ΠΌΠ°Ρ€ΡˆΠ΅Π²Ρ‹Ρ… тСстов. ΠžΠΏΡ€Π΅Π΄Π΅Π»ΡΠ΅Ρ‚ΡΡ понятиС ΠΏΡ€ΠΈΠΌΠΈΡ‚ΠΈΠ²Π°, ΠΎΠ±Π΅ΡΠΏΠ΅Ρ‡ΠΈΠ²Π°ΡŽΡ‰Π΅Π³ΠΎ условия Π°ΠΊΡ‚ΠΈΠ²ΠΈΠ·Π°Ρ†ΠΈΠΈ ΠΈ обнаруТСния Ρ€Π°Π·Π»ΠΈΡ‡Π½Ρ‹Ρ… Π²ΠΈΠ΄ΠΎΠ² PNPSFk. БинтСзируСтся ΠΌΠ°Ρ€ΡˆΠ΅Π²Ρ‹ΠΉ тСст March OP Ρ…Π°Ρ€Π°ΠΊΡ‚Π΅Ρ€ΠΈΠ·ΡƒΡŽΡ‰ΠΈΠΉΡΡ максимальной ΠΏΠΎΠ»Π½ΠΎΡ‚ΠΎΠΉ покрытия нСисправностСй PNPSFk ΠΏΠΎ ΡΡ€Π°Π²Π½Π΅Π½ΠΈΡŽ с извСстными ΠΌΠ°Ρ€ΡˆΠ΅Π²Ρ‹ΠΌΠΈ тСстами, ΠΎΠ±Π΅ΡΠΏΠ΅Ρ‡ΠΈΠ²Π°ΡŽΡ‰ΠΈΠΌΠΈ Ρ‚Π°ΠΊΡƒΡŽ ΠΆΠ΅ ΠΏΠΎΠ»Π½ΠΎΡ‚Ρƒ покрытия слоТных нСисправностСй Π·Π°ΠΏΠΎΠΌΠΈΠ½Π°ΡŽΡ‰ΠΈΡ… устройств

    Universal Address Sequence Generator for Memory Built-in Self-test

    Get PDF
    This paper presents the universal ad-dress sequence generator (UASG) for memorybuilt-in-self-test. The studies are based on the proposed universal method for generating address se-quences with the desired properties for multirun march memory tests. As a mathematical model, a modification of the recursive relation for quasi-random sequence generation is used. For this model, a structural diagram of the hardware implementation is given, of which the basis is a storage device for storing so-called direction numbers of the generation matrix. The form of the generation matrix determines the basic properties of the generated ad-dress sequences. The proposed UASG generates a wide spectrum of different address sequences, including the stand-ard ones, such as linear, address com-plement, gray code, worst-case gate delay, 2i, next address, and pseudoran-dom. Examples of the use of the pro-posed methods are considered. The result of the practical implementation of the UASG is presented, and the main characteristics are evaluated

    Towards Data Reliable, Low-Power, and Repairable Resistive Random Access Memories

    Get PDF
    A series of breakthroughs in memristive devices have demonstrated the potential of memristor arrays to serve as next generation resistive random access memories (ReRAM), which are fast, low-power, ultra-dense, and non-volatile. However, memristors' unique device characteristics also make them prone to several sources of error. Owing to the stochastic filamentary nature of memristive devices, various recoverable errors can affect the data reliability of a ReRAM. Permanent device failures further limit the lifetime of a ReRAM. This dissertation developed low-power solutions for more reliable and longer-enduring ReRAM systems. In this thesis, we first look into a data reliability issue known as write disturbance. Writing into a memristor in a crossbar could disturb the stored values in other memristors that are on the same memory line as the target cell. Such disturbance is accumulative over time which may lead to complete data corruption. To address this problem, we propose the use of two regular memristors on each word to keep track of the disturbance accumulation and trigger a refresh to restore the weakened data, once it becomes necessary. We also investigate the considerable variation in the write-time characteristics of individual memristors. With such variation, conventional fixed-pulse write schemes not only waste significant energy, but also cannot guarantee reliable completion of the write operations. We address such variation by proposing an adaptive write scheme that adjusts the width of the write pulses for each memristor. Our scheme embeds an online monitor to detect the completion of a write operation and takes into account the parasitic effect of line-shared devices in access-transistor-free memristive arrays. We further investigate the use of this method to shorten the test time of memory march algorithms by eliminating the need of a verifying read right after a write, which is commonly employed in the test sequences of march algorithms.Finally, we propose a novel mechanism to extend the lifetime of a ReRAM by protecting it against hard errors through the exploitation of a unique feature of bipolar memristive devices. Our solution proposes an unorthodox use of complementary resistive switches (a particular implementation of memristive devices) to provide an ``in-place spare'' for each memory cell at negligible extra cost. The in-place spares are then utilized by a repair scheme to repair memristive devices that have failed at a stuck-at-ON state at a page-level granularity. Furthermore, we explore the use of in-place spares in lieu of other memory reliability and yield enhancement solutions, such as error correction codes (ECC) and spare rows. We demonstrate that with the in-place spares, we can yield the same lifetime as a baseline ReRAM with either significantly fewer spare rows or a lighter-weight ECC, both of which can save on energy consumption and area

    Scalable String and Suffix Sorting: Algorithms, Techniques, and Tools

    Get PDF
    This dissertation focuses on two fundamental sorting problems: string sorting and suffix sorting. The first part considers parallel string sorting on shared-memory multi-core machines, the second part external memory suffix sorting using the induced sorting principle, and the third part distributed external memory suffix sorting with a new distributed algorithmic big data framework named Thrill.Comment: 396 pages, dissertation, Karlsruher Instituts f\"ur Technologie (2018). arXiv admin note: text overlap with arXiv:1101.3448 by other author

    Kansas Farmer and Mail & Breeze, v. 57, no. 50 (December 13, 1919)

    Get PDF
    Published as: Kansas Farmer, Vol. 1, no. 1 (May 1, 1863)-v. 57, no. 49 (Dec. 6, 1919); Kansas Farmer and Mail & Breeze, Vol. 57, no. 50 (Dec 13, 1919)-v. 64, no. 9 (Feb 27, 1926); Kansas Farmer, Mail & Breeze, Vol. 64, no. 10 (Mar. 6, 1926)-v. 70, no. 1 (Jan. 9, 1932); Kansas Farmer Continuing Mail & Breeze, Vol. 70, no. 2 (Jan. 23, 1932)-v. 76, no. 8 (Apr. 22, 1939); Kansas Farmer, Mail & Breeze, Vol. 76, no. 9 (May 6, 1939)-v. 77, no. 20 (Oct. 5, 1940); Kansas Farmer Continuing Mail & Breeze, Vol. 77, no. 21 (Oct. 19, 1940)-v. 91, no. 3 (Feb. 6, 1954).Issued by Kansas Farmer Co., 1863-1919; Kansas Farmer and Mail & Breeze, 1919-1926; Kansas Farmer, 1926-1954.Missing issues and volumes arranged chronologically by date and journal name: Kansas Farmer: vol. 6, nos. 2-8, 10 and 12 (1869); vol. 9, no. 10 (1872); vol. 14, no. 50 (1876); vol. 18, nos. 1, 12 and 13 (1880); vol. 24. no. 16 (1886); vol. 35 (1897); vol. 38 (1900); vol. 41, nos. 52 and 53 (1903); vol. 42, nos. 17 and 35 (1904); vol. 48, nos. 11 and 53 (1910); vol. 50, nos. 45-50 (1912); vol. 53 (1915); vol. 56 (1918); vol. 49, no. 39 (1919); Kansas Farmer, Continuing Mail & Breeze: vol. 73 (1935); vol. 85, nos. 9-17 (1948); and The Farmers Mail and Breeze: vol. 49, no. 39 (1919).Call number: S544.3.K3 K3

    The Papers of Thomas A. Edison

    Get PDF
    This newest volume in the acclaimed Papers of Thomas A. Edison covers one year in the life of America's greatest inventorβ€”1878. That year Edison, whom a New York newspaper in the spring first called "the Wizard of Menlo Park," developed the phonograph, one of his most famous inventions; made a breakthrough in the development of telephone transmitters, which made the instrument commercially viable; and announced the advent of domestic electric lighting, with only a few weeks' worth of tinkering necessary to complete its design (the announcement sent gas-company stocks plummeting; the research and development went on for four years).These inventions brought Edison financial support for his work and attention from the public. In January investors in the Edison Speaking Phonograph Company agreed to fund development work on the phonograph. The invention made Edison internationally famous and in May he traveled to Washington, D.C., to show the phonograph at the National Academy of Sciences, to Congress, and to President Rutherford B. Hayes at the White House. That same month Western Union agreed to pay Edison an annual salary of $6,000 for his telephone inventions, although other support from the company declined following the death of its president, William Orton. The stress of unceasing public attention, including a trans-Atlantic dispute over the question of who invented the microphone, led an exhausted Edison to travel west during the summer to witness a solar eclipse but also to seek rest. His six-week trip took him to San Francisco and the Yosemite region of California. Edison began working on electric lighting after his return and in October the Edison Electric Light Company was formed to support his research

    Viet Nam Generation, Volume 7, Number 1-2

    Get PDF
    Edited by Dan Duffy and Kali Tal. Contributing editors: Renny Christopher. David DeRose, Alan Farrell. Cynthia Fuchs, William M. King. Bill Shields, Tony Williams, and David Willson

    Ben Jonson\u27s Volpone : A Critical Variorum edition

    Full text link
    Ben Jonson\u27s Volpone: A Critical Variorum provides modern scholars with a comprehensive bibliographic reference work devoted to Jonson\u27s early seventeenth-century dramatic comedy and its four hundred years of critical commentary. By joining together Jonson\u27s Volpone and the work\u27s full complement of editorial information and critical material, this Variorum edition illuminates the play\u27s entire history of critical reception and literary interpretation within a format that allows readers and researchers to follow the evolving lines of influence peculiar to the work\u27s critical tradition and to locate new areas of investigation. Based upon an authoritative copy of the 1607 quarto, the Variorum reprints Jonson\u27s primary text above a continuous subset of line-by-line annotations that reflects the history of glosses and notes produced by the play\u27s legion of editors and commentators. At a glance, readers may review each footnote\u27s chronological survey of the editorial insights and critical remarks related to either the elucidation of the text\u27s dramatic language or the identification of Jonson\u27s historical and literary allusions. Those early observations that have since developed into larger critical debates receive fuller treatments within the variorum\u27s extensive collection of appendices. Drawing upon printed materials ranging from the earliest contemporary allusions to established critical works to the latest journal articles, each subsection of the Appendix provides a chronological distillation of the most significant contributions made to the play\u27s long history of textual scholarship, literary interpretation, or theatrical evaluation. Among its expansive range of topics, the Variorum\u27s appendices compile and organize the critical material and textual information related to the play\u27s printing and editorial histories; Jonson\u27s source materials and literary influences; and literary studies of the play\u27s genre, themes, language, and characters. In addition to its footnoted annotations and fully developed appendices, this variorum edition also provides a complete bibliographic catalogue of critical materials and resources pertinent to the study of the text
    corecore