983 research outputs found

    DFT and BIST of a multichip module for high-energy physics experiments

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    Engineers at Politecnico di Torino designed a multichip module for high-energy physics experiments conducted on the Large Hadron Collider. An array of these MCMs handles multichannel data acquisition and signal processing. Testing the MCM from board to die level required a combination of DFT strategie

    Transient Analysis of Lossy Transmission Lines: an Efficient Approach Based on the Method of Characteristics

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    This paper is devoted to transient analysis of lossy transmission lines characterized by frequency-dependent parameters. A public dataset of parameters for three line examples (a module, a board, and a cable) is used, and a new example of on-chip interconnect is introduced. This dataset provides a well established and realistic benchmark for accuracy and timing analysis of interconnect analysis tools. Particular attention is devoted to the intrinsic consistency and causality of these parameters. Several implementations based on generalizations of the well-known method-of-characteristics are presented. The key feature of such techniques is the extraction of the line modal delays. Therefore, the method is highly optimized for long interconnects characterized by significant propagation delay. Nonetheless, the method is also successfully applied here to a short high/loss on-chip line, for which other approaches based on lumped matrix rational approximations can also be used with high efficiency. This paper shows that the efficiency of delay extraction techniques is strongly dependent on the particular circuit implementation and several practical issues including generation of rational approximations and time step control are discussed in detail

    Advanced information processing system for advanced launch system: Hardware technology survey and projections

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    The major goals of this effort are as follows: (1) to examine technology insertion options to optimize Advanced Information Processing System (AIPS) performance in the Advanced Launch System (ALS) environment; (2) to examine the AIPS concepts to ensure that valuable new technologies are not excluded from the AIPS/ALS implementations; (3) to examine advanced microprocessors applicable to AIPS/ALS, (4) to examine radiation hardening technologies applicable to AIPS/ALS; (5) to reach conclusions on AIPS hardware building blocks implementation technologies; and (6) reach conclusions on appropriate architectural improvements. The hardware building blocks are the Fault-Tolerant Processor, the Input/Output Sequencers (IOS), and the Intercomputer Interface Sequencers (ICIS)

    Many-core and heterogeneous architectures: programming models and compilation toolchains

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    1noL'abstract è presente nell'allegato / the abstract is in the attachmentopen677. INGEGNERIA INFORMATInopartially_openembargoed_20211002Barchi, Francesc

    JTEC Panel report on electronic manufacturing and packaging in Japan

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    This report summarizes the status of electronic manufacturing and packaging technology in Japan in comparison to that in the United States, and its impact on competition in electronic manufacturing in general. In addition to electronic manufacturing technologies, the report covers technology and manufacturing infrastructure, electronics manufacturing and assembly, quality assurance and reliability in the Japanese electronics industry, and successful product realization strategies. The panel found that Japan leads the United States in almost every electronics packaging technology. Japan clearly has achieved a strategic advantage in electronics production and process technologies. Panel members believe that Japanese competitors could be leading U.S. firms by as much as a decade in some electronics process technologies

    Overcoming the Challenges for Multichip Integration: A Wireless Interconnect Approach

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    The physical limitations in the area, power density, and yield restrict the scalability of the single-chip multicore system to a relatively small number of cores. Instead of having a large chip, aggregating multiple smaller chips can overcome these physical limitations. Combining multiple dies can be done either by stacking vertically or by placing side-by-side on the same substrate within a single package. However, in order to be widely accepted, both multichip integration techniques need to overcome significant challenges. In the horizontally integrated multichip system, traditional inter-chip I/O does not scale well with technology scaling due to limitations of the pitch. Moreover, to transfer data between cores or memory components from one chip to another, state-of-the-art inter-chip communication over wireline channels require data signals to travel from internal nets to the peripheral I/O ports and then get routed over the inter-chip channels to the I/O port of the destination chip. Following this, the data is finally routed from the I/O to internal nets of the target chip over a wireline interconnect fabric. This multi-hop communication increases energy consumption while decreasing data bandwidth in a multichip system. On the other hand, in vertically integrated multichip system, the high power density resulting from the placement of computational components on top of each other aggravates the thermal issues of the chip leading to degraded performance and reduced reliability. Liquid cooling through microfluidic channels can provide cooling capabilities required for effective management of chip temperatures in vertical integration. However, to reduce the mechanical stresses and at the same time, to ensure temperature uniformity and adequate cooling competencies, the height and width of the microchannels need to be increased. This limits the area available to route Through-Silicon-Vias (TSVs) across the cooling layers and make the co-existence and co-design of TSVs and microchannels extreamly challenging. Research in recent years has demonstrated that on-chip and off-chip wireless interconnects are capable of establishing radio communications within as well as between multiple chips. The primary goal of this dissertation is to propose design principals targeting both horizontally and vertically integrated multichip system to provide high bandwidth, low latency, and energy efficient data communication by utilizing mm-wave wireless interconnects. The proposed solution has two parts: the first part proposes design methodology of a seamless hybrid wired and wireless interconnection network for the horizontally integrated multichip system to enable direct chip-to-chip communication between internal cores. Whereas the second part proposes a Wireless Network-on-Chip (WiNoC) architecture for the vertically integrated multichip system to realize data communication across interlayer microfluidic coolers eliminating the need to place and route signal TSVs through the cooling layers. The integration of wireless interconnect will significantly reduce the complexity of the co-design of TSV based interconnects and microchannel based interlayer cooling. Finally, this dissertation presents a combined trade-off evaluation of such wireless integration system in both horizontal and vertical sense and provides future directions for the design of the multichip system

    Integrated sensors for process monitoring and health monitoring in microsystems

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    This thesis presents the development of integrated sensors for health monitoring in Microsystems, which is an emerging method for early diagnostics of status or “health” of electronic systems and devices under operation based on embedded tests. Thin film meander temperature sensors have been designed with a minimum footprint of 240 m × 250 m. A microsensor array has been used successfully for accurate temperature monitoring of laser assisted polymer bonding for MEMS packaging. Using a frame-shaped beam, the temperature at centre of bottom substrate was obtained to be ~50 ºC lower than that obtained using a top-hat beam. This is highly beneficial for packaging of temperature sensitive MEMS devices. Polymer based surface acoustic wave humidity sensors were designed and successfully fabricated on 128° cut lithium niobate substrates. Based on reflection signals, a sensitivity of 0.26 dB/RH% was achieved between 8.6 %RH and 90.6 %RH. Fabricated piezoresistive pressure sensors have also been hybrid integrated and electrically contacted using a wire bonding method. Integrated sensors based on both LiNbO3 and ZnO/Si substrates are proposed. Integrated sensors were successfully fabricated on a LiNbO3 substrate with a footprint of 13 mm × 12 mm, having multi monitoring functions for simultaneous temperature, measurement of humidity and pressure in the health monitoring applications

    Reconfigurable Adaptive Multiple Transform Hardware Solutions for Versatile Video Coding

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    Computer aided design is nowadays a must to quickly provide optimized circuits, to cope with stringent time to market constraints, and to be able to guarantee colliding constrained requirements. Design automation is exploited, whenever possible, to speed up the design process and relieve the developers from error prone customization, optimization and tuning phases. In this work we study the possibility of adopting automated algorithms for the optimization of reconfigurable multiple constant multiplication circuits. In particular, an exploration of novel reconfigurable Adaptive Multiple Transform circuital solutions adoptable in video coding applications has been conducted. These solutions have also been compared with the unique similar work at the state of the art, revealing to be beneficial under certain constraints. Moreover, the proposed approach has been generalized with some guidelines helpful to designers facing similar problems

    Glass multilayer bonding for high density interconnect substrates

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    The aim of this research was the investigation of bonding borosilicate glass sheets, its trade mark CMZ, 100μm thickness, to create multilayer substrates capable of supporting high-density electrical interconnections. CMZ glass was chosen as it has a coefficient of thermal expansion that is close to that of silicon, thereby minimising thermal stresses in assemblies generated by manufacturing processes or service conditions. Two different methods of bonding the glass were used in this study; pressure assisted low temperature bonding (PALTB), and water glass bonding, using Sodium Trisilicate (Na2Si3O7) solution. These two bonding methods have already been applied in electronics manufacturing applications, such as silicon wafer bonding and multichip modules (MCMs). However, glass-to-glass bonding is a relatively new subject and this study is an attempt to standardise bonding processes. Additionally, the concept of using glass as a multilayer substrate provides a foundation for further exploration by other investigators. Initial tests that were carried out before standardising the procedures for these two methods showed that a two-stage bonding process provided optimum results. A preliminary stage commenced by placing the cleaned (using Decon 90 solution) samples in a vacuum oven for 15 minutes, then heating at 100oC for 1hr. The permanent stage was then achieved by heating the samples in a conventional oven at temperatures from 200 to 400oC, for different periods. At this stage, the main difference between the two methods was the application of pressure (1-2MPa) during heating of the PALTB samples. To evaluate the quality of the bonds, qualitative tests such as visual, optical microscope and dye penetrant were used. In addition, to estimate the strength and the rigidity of the interlayer bonds, two quantitative tests, comprising of deflection under cyclic stresses and crack opening were used. Thermal cycling and humidity tests were also used to assess resistance of the bonds to environmental effects. The results showed that heating to 100oC was insufficient to enhance the bonds, as occasionally a sudden increase of deflection was observed indicating slippage/delamination. These bonds were enhanced during the permanent bonding stage by heating to 300oC in PALTB, under a pressure of 1-2MPa. The crack-opening test showed that the delamination distances of the bonds in the permanent stage were lower than that for preliminary bonding in both bonding methods. The delamination distances from the crack opening tests were used to calculate the strain energy release rate (GIC) and fracture toughness (KIC) values of the interlayers. The results showed that the KIC values of the permanent PALTB and water glass interlayers were higher than 1MPa.m0.5, while the KIC value of the CMZ glass, determined by linear elastic fracture mechanics, was around 0.8MPa.m0.5. The optical observations revealed that the prepared bonded sheets did not delaminate or break after thermal cycling and humidity tests

    Materials for high-density electronic packaging and interconnection

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    Electronic packaging and interconnections are the elements that today limit the ultimate performance of advanced electronic systems. Materials in use today and those becoming available are critically examined to ascertain what actions are needed for U.S. industry to compete favorably in the world market for advanced electronics. Materials and processes are discussed in terms of the final properties achievable and systems design compatibility. Weak points in the domestic industrial capability, including technical, industrial philosophy, and political, are identified. Recommendations are presented for actions that could help U.S. industry regain its former leadership position in advanced semiconductor systems production
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