Ultra Small Antenna and Low Power Receiver for Smart Dust Wireless Sensor Networks

Wireless Sensor Networks have the potential for profound impact on our daily lives. Smart Dust Wireless Sensor Networks (SDWSNs) are emerging members of the Wireless Sensor Network family with strict requirements on communication node sizes (1 cubic centimeter) and power consumption (< 2mW during short on-states). In addition, the large number of communication nodes needed in SDWSN require highly integrated solutions. This dissertation develops new design techniques for low-volume antennas and low-power receivers for SDWSN applications. In addition, it devises an antenna and low noise amplifier co-design methodology to increase the level of design integration, reduce receiver noise, and reduce the development cycle. This dissertation first establishes stringent principles for designing SDWSN electrically small antennas (ESAs). Based on these principles, a new ESA, the F-Inverted Compact Antenna (FICA), is designed at 916MHz. This FICA has a significant advantage in that it uses a small-size ground plane. The volume of this FICA (including the ground plane) is only 7% of other state-of-the-art ESAs, while its efficiency (48.53%) and gain (-1.38dBi) are comparable to antennas of much larger dimensions. A physics-based circuit model is developed for this FICA to assist system level design at the earliest stage, including optimization of the antenna performance. An antenna and low noise amplifier (LNA) co-design method is proposed and proven to be valid to design low power LNAs with the very low noise figure of only 1.5dB. To reduce receiver power consumption, this dissertation proposes a novel LNA active device and an input/ouput passive matching network optimization method. With this method, a power efficient high voltage gain cascode LNA was designed in a 0.13um CMOS process with only low quality factor inductors. This LNA has a 3.6dB noise figure, voltage gain of 24dB, input third intercept point (IIP3) of 3dBm, and power consumption of 1.5mW at 1.0V supply voltage. Its figure of merit, using the typical definition, is twice that of the best in the literature. A full low power receiver is developed with a sensitivity of -58dBm, chip area of 1.1mm2, and power consumption of 2.85mW

Transformer based front-end for a low power 2.4 GHz transceiver

A low power transceiver architecture for the 2.4 GHz ISM band using a 1.0 V supply is presented. It employs a transformer to convert the 100 Ω antenna impedance to almost 1 kΩ and so facilitates a low power transmitter and receiver. The simulated post-layout output power of the differential class-E power amplifier is 2.0 dBm with a drain efficiency of 28.4%. The direct-conversion receiver achieves a very low power consumption of 420 μW and a noise figure of 15.0 dB.Ministerio de Ciencia e Innovación TEC2009-08447Junta de Andalucía TIC-0281

A Fully-Integrated Reconfigurable Dual-Band Transceiver for Short Range Wireless Communications in 180 nm CMOS

© 2015 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works.A fully-integrated reconfigurable dual-band (760-960 MHz and 2.4-2.5 GHz) transceiver (TRX) for short range wireless communications is presented. The TRX consists of two individually-optimized RF front-ends for each band and one shared power-scalable analog baseband. The sub-GHz receiver has achieved the maximum 75 dBc 3rd-order harmonic rejection ratio (HRR3) by inserting a Q-enhanced notch filtering RF amplifier (RFA). In 2.4 GHz band, a single-ended-to-differential RFA with gain/phase imbalance compensation is proposed in the receiver. A ΣΔ fractional-N PLL frequency synthesizer with two switchable Class-C VCOs is employed to provide the LOs. Moreover, the integrated multi-mode PAs achieve the output P1dB (OP1dB) of 16.3 dBm and 14.1 dBm with both 25% PAE for sub-GHz and 2.4 GHz bands, respectively. A power-control loop is proposed to detect the input signal PAPR in real-time and flexibly reconfigure the PA's operation modes to enhance the back-off efficiency. With this proposed technique, the PAE of the sub-GHz PA is improved by x3.24 and x1.41 at 9 dB and 3 dB back-off powers, respectively, and the PAE of the 2.4 GHz PA is improved by x2.17 at 6 dB back-off power. The presented transceiver has achieved comparable or even better performance in terms of noise figure, HRR, OP1dB and power efficiency compared with the state-of-the-art.Peer reviewe

A 24-GHz, +14.5-dBm fully integrated power amplifier in 0.18-μm CMOS

A 24-GHz +14.5-dBm fully integrated power amplifier with on-chip 50-[ohm] input and output matching is demonstrated in 0.18-μm CMOS. The use of substrate-shielded coplanar waveguide structures for matching networks results in low passive loss and small die size. Simple circuit techniques based on stability criteria derived result in an unconditionally stable amplifier. The power amplifier achieves a power gain of 7 dB and a maximum single-ended output power of +14.5-dBm with a 3-dB bandwidth of 3.1 GHz, while drawing 100 mA from a 2.8-V supply. The chip area is 1.26 mm^2

A Wideband 77-GHz, 17.5-dBm Fully Integrated Power Amplifier in Silicon

A 77-GHz, +17.5 dBm power amplifier (PA) with fully integrated 50-Ω input and output matching and fabricated in a 0.12-µm SiGe BiCMOS process is presented. The PA achieves a peak power gain of 17 dB and a maximum single-ended output power of 17.5 dBm with 12.8% of power-added efficiency (PAE). It has a 3-dB bandwidth of 15 GHz and draws 165 mA from a 1.8-V supply. Conductor-backed coplanar waveguide (CBCPW) is used as the transmission line structure resulting in large isolation between adjacent lines, enabling integration of the PA in an area of 0.6 mm^2. By using a separate image-rejection filter incorporated before the PA, the rejection at IF frequency of 25 GHz is improved by 35 dB, helping to keep the PA design wideband

A 10-bit Charge-Redistribution ADC Consuming 1.9 μW at 1 MS/s

This paper presents a 10 bit successive approximation ADC in 65 nm CMOS that benefits from technology scaling. It meets extremely low power requirements by using a charge-redistribution DAC that uses step-wise charging, a dynamic two-stage comparator and a delay-line-based controller. The ADC requires no external reference current and uses only one external supply voltage of 1.0 V to 1.3 V. Its supply current is proportional to the sample rate (only dynamic power consumption). The ADC uses a chip area of approximately 115--225 μm2. At a sample rate of 1 MS/s and a supply voltage of 1.0 V, the 10 bit ADC consumes 1.9 μW and achieves an energy efficiency of 4.4 fJ/conversion-step