Low-power CMOS front-ends for wireless personal area networks

The potential of implementing subthreshold radio frequency circuits in deep sub-micron CMOS technology was investigated for developing low-power front-ends for wireless personal area network (WPAN) applications. It was found that the higher transconductance to bias current ratio in weak inversion could be exploited in developing low-power wireless front-ends, if circuit techniques are employed to mitigate the higher device noise in subthreshold region. The first fully integrated subthreshold low noise amplifier was demonstrated in the GHz frequency range requiring only 260 μW of power consumption. Novel subthreshold variable gain stages and down-conversion mixers were developed. A 2.4 GHz receiver, consuming 540 μW of power, was implemented using a new subthreshold mixer by replacing the conventional active low noise amplifier by a series-resonant passive network that provides both input matching and voltage amplification. The first fully monolithic subthreshold CMOS receiver was also implemented with integrated subthreshold quadrature LO (Local Oscillator) chain for 2.4 GHz WPAN applications. Subthreshold operation, passive voltage amplification, and various low-power circuit techniques such as current reuse, stacking, and differential cross coupling were combined to lower the total power consumption to 2.6 mW. Extremely compact resistive feedback CMOS low noise amplifiers were presented as a cost-effective alternative to narrow band LNAs using high-Q inductors. Techniques to improve linearity and reduce power consumption were presented. The combination of high linearity, low noise figure, high broadband gain, extremely small die area and low power consumption made the proposed LNA architecture a compelling choice for many wireless applications.Ph.D.Committee Chair: Laskar, Joy; Committee Member: Chakraborty, Sudipto; Committee Member: Chang, Jae Joon; Committee Member: Divan, Deepakraj; Committee Member: Kornegay, Kevin; Committee Member: Tentzeris, Emmanoui

Design and Analysis of Low-power Millimeter-Wave SiGe BiCMOS Circuits with Application to Network Measurement Systems

Interest in millimeter (mm-) wave frequencies covering the spectrum of 30-300 GHz has been steadily increasing. Advantages such as larger absolute bandwidth and smaller form-factor have made this frequency region attractive for numerous applications, including high-speed wireless communication, sensing, material science, health, automotive radar, and space exploration. Continuous development of silicon-germanium heterojunction bipolar transistor (SiGe HBT) and associated BiCMOS technology has achieved transistors with fT/fmax of 505/720 GHz and integration with 55 nm CMOS. Such accomplishment and predictions of beyond THz performance have made SiGe BiCMOS technology the most competitive candidate for addressing the aforementioned applications. Especially for mobile applications, a critical demand for future mm-wave applications will be low DC power consumption (Pdc), which requires a substantial reduction of supply voltage and current. Conventionally, reducing the supply voltage will lead to HBTs operating close to or in the saturation region, which is typically avoided in mm-wave circuits due to expectated performance degradation and often inaccurate models. However, due to only moderate speed reduction at the forward-biased base-collector voltage (VBC) up to 0.5 V and the accuracy of the compact model HICUM/L2 also in saturation, low-power mm-wave circuits with SiGe HBTs operating in saturation offer intriguing benefits, which have been explored in this thesis based on 130 nm SiGe BiCMOS technologies: • Different low-power mm-wave circuit blocks are discussed in detail, including low-noise amplifiers (LNAs), down-conversion mixers, and various frequency multipliers covering a wide frequency range from V-band (50-75 GHz) to G-band (140-220 GHz). • Aiming at realizing a better trade-off between Pdc and RF performance, a drastic decrease in supply voltage is realized with forward-biased VBC, forcing transistors of the circuits to operate in saturation. • Discussions contain the theoretical analysis of the key figure of merits (FoMs), topology and bias selection, device sizing, and performance enhancement techniques. • A 173-207 GHz low-power amplifier with 23 dB gain and 3.2 mW Pdc, and a 72-108 GHz low-power tunable amplifier with 10-23 dB gain and 4-21 mW Pdc were designed. • A 97 GHz low-power down-conversion mixer was presented with 9.6 dB conversion gain (CG) and 12 mW Pdc. • For multipliers, a 56-66 GHz low-power frequency quadrupler with -3.6 dB peak CG and 12 mW Pdc, and a 172-201 GHz low-power frequency tripler with -4 dB peak CG and 10.5 mW Pdc were realized. By cascading these two circuits, also a 176-193 GHz low-power ×12 multiplier was designed, achieving -11 dBm output power with only 26 mW Pdc. • An integrated 190 GHz low-power receiver was designed as one receiving channel of a G-band frequency extender specifically for a VNA-based measurement system. Another goal of this receiver is to explore the lowest possible Pdc while keeping its highly competitive RF performance for general applications requiring a wide LO tuning range. Apart from the low-power design method of circuit blocks, the careful analysis and distribution of the receiver FoMs are also applied for further reduction of the overall Pdc. Along this line, this receiver achieved a peak CG of 49 dB with a 14 dB tunning range, consuming only 29 mW static Pdc for the core part and 171 mW overall Pdc, including the LO chain. • All designs presented in this thesis were fabricated and characterized on-wafer. Thanks to the accurate compact model HICUM/L2, first-pass access was achieved for all circuits, and simulation results show excellent agreement with measurements. • Compared with recently published work, most of the designs in this thesis show extremely low Pdc with highly competitive key FoMs regarding gain, bandwidth, and noise figure. • The observed excellent measurement-simulation agreement enables the sensitivity analysis of each design for obtaining a deeper insight into the impact of transistor-related physical effects on critical circuit performance parameters. Such studies provide meaningful feedback for process improvement and modeling development.:Table of Contents Kurzfassung . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ii Abstract . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . iv Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . vii 1 Introduction 1 1.1 Motivation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.2 Objectives . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 List of symbols and acronyms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 2 Technology 7 2.1 Fabrication Technologies . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 2.1.1 SiGe HBT performance . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 2.1.2 B11HFC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 2.1.3 SG13G2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 2.1.4 SG13D7 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2.2 Commonly Used Components . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2.2.1 Grounded-sidewall-shielded microstrip line . . . . . . . . . . . . . . . . . . 12 2.2.2 Zero-impedance Transmission Line . . . . . . . . . . . . . . . . . . . . . . 15 2.2.3 Balun . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 2.2.3.1 Active Balun . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 2.2.3.2 Passive Balun . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 2.3 Conclusion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 3 Low-power Low-noise Amplifiers 25 3.1 173-207 GHz Ultra-low-power Amplifier . . . . . . . . . . . . . . . . . . . . . . . 25 3.1.1 Topology Selection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 3.1.2 Bias Dependency of the Small-signal Performance . . . . . . . . . . . . . 27 3.1.2.1 Bias . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 3.1.2.2 Bias vs Gain . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 3.1.2.3 Bias vs Noise . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31 3.1.2.4 Bias vs Stability . . . . . . . . . . . . . . . . . . . . . . . . . . . 34 3.1.3 Bias selection and Device sizing . . . . . . . . . . . . . . . . . . . . . . . . 36 3.1.3.1 Bias Selection . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36 3.1.3.2 Device Sizing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37 3.1.4 Performance Enhancement Technologies . . . . . . . . . . . . . . . . . . . 41 3.1.4.1 Gm-boosting Inductors . . . . . . . . . . . . . . . . . . . . . . . 41 3.1.4.2 Stability Enhancement . . . . . . . . . . . . . . . . . . . . . . . 43 3.1.4.3 Noise Improvement . . . . . . . . . . . . . . . . . . . . . . . . . 45 3.1.5 Circuit Realization . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46 3.1.5.1 Layout Scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46 3.1.5.2 Inductors Design . . . . . . . . . . . . . . . . . . . . . . . . . . . 47 3.1.5.3 Dual-band Matching Network . . . . . . . . . . . . . . . . . . . 48 3.1.5.4 Circuit Implementation . . . . . . . . . . . . . . . . . . . . . . . 50 3.1.6 Results and Discussions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51 3.1.6.1 Measurement Setup . . . . . . . . . . . . . . . . . . . . . . . . . 51 3.1.6.2 Measurement Results . . . . . . . . . . . . . . . . . . . . . . . . 51 3.1.6.3 Analysis . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 54 3.2 72-108 GHz Low-Power Tunable Amplifier . . . . . . . . . . . . . . . . . . . . . . 55 3.2.1 Configuration, Sizing, and Bias Tuning Range . . . . . . . . . . . . . . . . 55 3.2.2 Regional Matching Network . . . . . . . . . . . . . . . . . . . . . . . . . . 57 3.2.2.1 Impedance Variation . . . . . . . . . . . . . . . . . . . . . . . . . 57 3.2.2.2 Regional Matching Network Design . . . . . . . . . . . . . . . . 60 3.2.3 Circuit Implementation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 3.2.4 Results and Discussion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 3.2.4.1 Results . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 3.2.4.2 Analysis . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 68 3.3 Conclusion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 71 4 Low-power Down-conversion Mixers 73 4.1 97 GHz Low-power Down-conversion Mixer . . . . . . . . . . . . . . . . . . . . . 74 4.1.1 Mixer Design and Implementation . . . . . . . . . . . . . . . . . . . . . . 74 4.1.1.1 Mixer Topology . . . . . . . . . . . . . . . . . . . . . . . . . . . 74 4.1.1.2 Bias Selection and Device Sizing . . . . . . . . . . . . . . . . . . 77 4.1.1.3 Mixer Implementation . . . . . . . . . . . . . . . . . . . . . . . . 79 4.1.2 Results and Discussion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80 4.1.2.1 Measurement Results . . . . . . . . . . . . . . . . . . . . . . . . 80 4.1.2.2 Analysis . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 82 4.2 Conclusion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83 5 Low-power Multipliers 87 5.1 General Design Flow . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 88 5.2 56-66 GHz Low-power Frequency Quadrupler . . . . . . . . . . . . . . . . . . . . 89 5.3 172-201 GHz Low-power Frequency Tripler . . . . . . . . . . . . . . . . . . . . . 93 5.4 176-193 GHz Low-power ×12 Frequency Multiplier . . . . . . . . . . . . . . . . . 96 5.5 Conclusion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 6 Low-power Receivers 101 6.1 Receiver Performance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 101 6.2 LO Chain (×12) Integrated 190 GHz Low-Power Receiver . . . . . . . . . . . . . 104 6.2.1 Receiver Architecture . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 105 6.2.2 Low-power Considerations . . . . . . . . . . . . . . . . . . . . . . . . . . . 107 6.2.3 Building Blocks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 108 6.2.3.1 LNA and LO DA . . . . . . . . . . . . . . . . . . . . . . . . . . 108 6.2.3.2 Tunable Mixer and IF BA . . . . . . . . . . . . . . . . . . . . . 111 6.2.3.3 65 GHz (V-band) Quadrupler . . . . . . . . . . . . . . . . . . . 116 6.2.3.4 G-band Tripler . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120 6.2.4 Receiver Results and Discussion . . . . . . . . . . . . . . . . . . . . . . . 123 6.2.5 Measurement Setup . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 124 6.2.6 Results . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 124 6.3 Conclusion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 131 7 Conclusions 133 7.1 Summaries . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 133 7.2 Outlook . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 134 Bibliography 135 List of Figures 149 List of Tables 157 A Derivation of the Gm 159 A.1 Gm of standard cascode stage . . . . . . . . . . . . . . . . . . . . . . . . . . . . 159 A.2 Gm of cascode stage with Lcas . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160 A.3 Gm of cascode stage with Lb . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 161 B Derivation of Yin in the stability analysis 163 C Derivation of Zin and Zout 165 C.1 Zin . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 165 C.2 Zout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 167 D Derivation of the cascaded oP1dB 169 E Table of element values for the designed circuits 17

Receiver Front-Ends in CMOS with Ultra-Low Power Consumption

Historically, research on radio communication has focused on improving range and data rate. In the last decade, however, there has been an increasing demand for low power and low cost radios that can provide connectivity with small devices around us. They should be able to offer basic connectivity with a power consumption low enough to function extended periods of time on a single battery charge, or even energy scavenged from the surroundings. This work is focused on the design of ultra-low power receiver front-ends intended for a receiver operating in the 2.4GHz ISM band, having an active power consumption of 1mW and chip area of 1mm². Low power consumption and small size make it hard to achieve good sensitivity and tolerance to interference. This thesis starts with an introduction to the overall receiver specifications, low power radio and radio standards, front-end and LO generation architectures and building blocks, followed by the four included papers. Paper I demonstrates an inductorless front-end operating at 915MHz, including a frequency divider for quadrature LO generation. An LO generator operating at 2.4GHz is shown in Paper II, enabling a front-end operating above 2GHz. Papers III and IV contain circuits with combined front-end and LO generator operating at or above the full 2.45GHz target frequency. They use VCO and frequency divider topologies that offer efficient operation and low quadrature error. An efficient passive-mixer design with improved suppression of interference, enables an LNA-less design in Paper IV capable of operating without a SAW-filter

Metodologia Per la Caratterizzazione di amplificatori a basso rumore per UMTS

In questo lavoro si presenta una metodologia di progettazione elettronica a livello di sistema, affrontando il problema della caratterizzazione dello spazio di progetto dell' amplificatore a basso rumore costituente il primo stadio di un front end a conversione diretta per UMTS realizzato in tecnologia CMOS con lunghezza di canale .18u. La metodologia è sviluppata al fine di valutare in modo quantititativo le specifiche ottime di sistema per il front-end stesso e si basa sul concetto di Piattaforma Analogica, che prevede la costruzione di un modello di prestazioni per il blocco analogico basato su campionamento statistico di indici di prestazioni del blocco stesso, misurati tramite simulazione di dimensionamenti dei componenti attivi e passivi soddisfacenti un set di equazioni specifico della topologia circuitale. Gli indici di prestazioni vengono successivamente ulizzati per parametrizzare modelli comportamentali utilizzati nelle fasi di ottimizzazione a livello di sistema. Modelli comportamentali atti a rappresentare i sistemi RF sono stati pertanto studiati per ottimizzare la scelta delle metriche di prestazioni. L'ottimizzazione dei set di equazioni atti a selezionare le configurazione di interesse per il campionamento ha al tempo stesso richiesto l'approfondimento dei modelli di dispositivi attivi validi in tutte le regioni di funzionamento, e lo studio dettagliato della progettazione degli amplificatori a basso rumore basati su degenerazione induttiva. Inoltre, il problema della modellizzazione a livello di sistema degli effetti della comunicazione tra LNA e Mixer è stato affrontato proponendo e analizzando diverse soluzioni. Il lavoro ha permesso di condurre un'ottimizzazione del front-end UMTS, giungendo a specifiche ottime a livello di sistema per l'amplificatore stesso

Integrated Circuit and Antenna Technology for Millimeter-wave Phased Array Radio Front-end

Ever growing demands for higher data rate and bandwidth are pushing extremely high data rate wireless applications to millimeter-wave band (30-300GHz), where sufficient bandwidth is available and high data rate wireless can be achieved without using complex modulation schemes. In addition to the communication applications, millimeter-wave band has enabled novel short range and long range radar sensors for automotive as well as high resolution imaging systems for medical and security. Small size, high gain antennas, unlicensed and worldwide availability of released bands for communication and a number of other applications are other advantages of the millimeter-wave band. The major obstacle for the wide deployment of commercial wireless and radar systems in this frequency range is the high cost and bulky nature of existing GaAs- and InP-based solutions. In recent years, with the rapid scaling and development of the silicon-based integrated circuit technologies such as CMOS and SiGe, low cost technologies have shown acceptable millimeter-wave performance, which can enable highly integrated millimeter-wave radio devices and reduce the cost significantly. Furthermore, at this range of frequencies, on-chip antenna becomes feasible and can be considered as an attractive solution that can further reduce the cost and complexity of the radio package. The propagation channel challenges for the realization of low cost and reliable silicon-based communication devices at millimeter-wave band are severe path loss as well as shadowing loss of human body. Silicon technology challenges are low-Q passive components, low breakdown voltage of active devices, and low efficiency of on-chip antennas. The main objective of this thesis is to investigate and to develop antenna and front-end for cost-effective silicon based millimeter-wave phased array radio architectures that can address above challenges for short range, high data rate wireless communication as well as radar applications. Although the proposed concepts and the results obtained in this research are general, as an important example, the application focus in this research is placed on the radio aspects of emerging 60 GHz communication system. For this particular but extremely important case, various aspects of the technology including standard, architecture, antenna options and indoor propagation channel at presence of a human body are studied. On-chip dielectric resonator antenna as a radiation efficiency improvement technique for an on-chip antenna on low resistivity silicon is presented, developed and proved by measurement. Radiation efficiency of about 50% was measured which is a significant improvement in the radiation efficiency of on-chip antennas. Also as a further step, integration of the proposed high efficiency antenna with an amplifier in transmit and receive configurations at 30 GHz is successfully demonstrated. For the implementation of a low cost millimeter-wave array antenna, miniaturized, and efficient antenna structures in a new integrated passive device technology using high resistivity silicon are designed and developed. Front-end circuit blocks such as variable gain LNA, continuous passive and active phase shifters are investigated, designed and developed for a 60GHz phased array radio in CMOS technology. Finally, two-element CMOS phased array front-ends based on passive and active phase shifting architectures are proposed, developed and compared

MILLIMETER-WAVE QUADRATURE RECEIVERS FOR ATMOSPHERIC SENSING AND RADIOMETRY

The objective of this research is to investigate the design challenges of millimeter wave (mm-wave) quadrature receivers for emerging applications and develop new ideas to ad- dress these challenges. Next-generation wireless networks, satellite communications, atmospheric sensing instruments, autonomous vehicle radars, and body scanners are targeting to operate at mm-wave frequencies, and high-performance electronics are needed to enable these technologies. In this research, we investigate novel circuit topologies to improve the performance of existing mm-wave quadrature receivers, particularly for radiometry and remote sensing applications. A transformer-based front-end switch is co- designed with an LNA where the transformer acts as the input matching network of the LNA, reducing the front-end loss and system noise figure. Broadband and low-loss quadrature signal generation networks are proposed to provide highly balanced quadrature signals to reject the image frequency content. In addition, a high-efficiency frequency multiplier topology is demonstrated, achieving superior performance compared to the state-of-the-art designs. Lastly, the reliability and noise performance of on-chip noise source devices (PN junctions) in a SiGe BiCMOS platform was characterized and compared. To confirm the advantages of our ideas, the measurement and simulation results of all fabricated circuits are presented and discussed.Ph.D

Integrated Antennas and Active Beamformers Technology for mm-Wave Phased-Array Systems

In this thesis, based on the indoor channel measurements and ray-tracing modeling for the indoor mm-wave wireless communications, the challenges of the design of the radio in this band is studied. Considering the recently developed standards such as IEEE 802.15.3c, ECMA and WiGig at 60 GHz, the link budget of the system design for different classes of operation is done and the requirement for the antenna and other RF sections are extracted. Based on radiation characteristics of mm-wave and the fundamental limits of low-cost Silicon technology, it is shown that phased-array is the ultimate solution for the radio and physical layer of the mobile millimeter wave multi-Gb/s wireless networks. Different phased-array configurations are studied and a low-cost single-receiver array architecture with RF phase-shifting is proposed. A systematic approach to the analysis of the overall noise-figure of the proposed architecture is presented and the component technical requirements are derived for the system level specifications. The proposed on-chip antennas and antenna-in-packages for various applications are designed and verified by the measurement results. The design of patch antennas on the low-cost RT/Duroid substrate and the slot antennas on the IPD technologies as well as the compact on-chip slot DRA antenna are explained in the antenna design section. The design of reflective-type phase shifters in CMOS and MEMS technologies is explained. Finally, the design details of two developed 60 GHz integrated phased-arrays in CMOS technology are discussed. Front-end circuit blocks such as LNA, continuous passive reflective-type phase shifters, power combiner and variable gain amplifiers are investigated, designed and developed for a 60 GHz phased-array radio in CMOS technology. In the first design, the two-element CMOS phased-array front-ends based on passive phase shifting architecture is proposed and developed. In the second phased-array, the recently developed on-chip dielectric resonator antenna in our group in lower frequency is scaled and integrated with the front-end

Research for Pseudo Millimeter Wave Circuit Design with 0.18μm CMOS Technology Node

九州工業大学博士学位論文 学位記番号:工博甲第405号 学位授与年月日:平成27年9月25日第一章：イントロダクション | 第二章：技術的課題 | 第三章：モデリング(ディエンベディング)手法 | 第四章：受動素子の設計とそのモデリング結果 | 第五章：K u - バンドの衛星放送受信機用低雑音ブロックに関する研究 | 第六章：K a - バンド周波数変調連続波変調用レーダに適したVCO の研究 | 第七章：結論九州工業大学平成27年

Extension of 0.18µm standard CMOS technology operating range to the microwave and millimetre-wave regime

There is an increasing interest in building millimetre-wave circuits on standard digital complementary metal oxide semiconductor (CMOS) technology for applications such as wireless local area networks (WLAN), automotive radar and remote sensing. This stems from the existing low cost, well-developed, high yield infrastructure for mass production. The overall aim of this thesis is to extend the operating range of 0.18um standard logic CMOS technology to millimetre-wave regime. To this end, microwave and millimetre-wave design, optimisation and modelling methodologies for active and passive devices and low noise circuit implementation are described. As part of the evaluation, new systematic and modular ways of making high performance passive and active devices such as spiral inductors, slow-wave coplanar waveguide (CPW) transmission lines, comb capacitors and NMOS transistors are proposed, designed, simulated, fabricated, modelled and analysed. Small-signal and noise de-embedding techniques are developed and verified up to 110 GHz, providing an increased accuracy in the device model, leading to a robust design at millimetre-wave frequencies. Reduced substrate losses resulting in increased quality factor are presented for optimised spiral inductor designs, featuring patterned floating shield (PFS), enabling improved matching network and a reduced chip area. Based on the proposed shielded slow-wave CPW, both the line attenuation and structure length are decreased, resulting in a more compact and simplified circuit design. An optimised transistor design, aimed at reducing the layout parasitic effects, was realised. The optimisation led to a significant improvement in the gain and noise performance of the transistor, extending its operation beyond the cut-off frequency (ft). By combining all the optimised components, low noise amplifiers (LNAs) operating at 25 GHz and 40 GHz were implemented and compared. These LNAs demonstrate state-of-the-art performance, with the 40 GHz LNA exhibiting the highest gain and lowest noise performance of any LNA reported using 0.18um CMOS technology. On the other hand, the 25 GHz LNA showed a comparable performance to other reported results in literature using several topologies implemented in CMOS technology. These findings will provide a framework for expansion to smaller CMOS technology nodes with the view of extending to sub millimetre-wave frequencies