Low-Noise and High-Efficiency Near-IR SPADs in 110nm CIS Technology

Photon detection at longer wavelengths is much desired for LiDAR applications. Silicon photodiodes with deeper junctions and larger multiplication regions are in principle more sensitive to near-IR photons. This paper presents the complete electro-optical characterization of a P-well/ Deep N-well singlephoton avalanche diodes integrated in 110nm CMOS image sensor technology. The performance of time-of-flight image sensors is determined by the characteristics of the individual SPADs. In order to fully characterize this technology, devices with various sizes, shapes and guard ring widths have been fabricated and tested. The measured mean breakdown voltage is of 18V. The proposed structure has 0.4Hz/µm 2 dark count rate, 0.5% afterpulsing, 188ps FWHM (total) jitter and around 10% photon detection probability at 850nm wavelength. All figures have been measured at 3V excess voltage.Office of Naval Research (USA) N000141912156Junta de Andalucía P12-TIC 2338Ministerio de Economía y Competitividad RTI2018-097088-B-C3

Design of CMOS Digital Silicon Photomultipliers with ToF for Positron Emission Tomography

This thesis presents a contribution to the design of single-photon detectors for medical imaging. Specifically, the focus has been on the development of a pixel capable of single-photon counting in CMOS technology, and the associated sensor thereof. These sensors can work under low light conditions and provide timing information to determine the time-stamp of the incoming photons. For instance, this is particularly attractive for applications that rely either on time-of-flight measurements or on exponential decay determination of the light source, like positron emission tomography or fluorescence-lifetime imaging, respectively. This thesis proposes the study of the pixel architecture to optimize its performance in terms of sensitivity, linearity and signal to noise ratio. The design of the pixel has followed a bottom-up approach, taking care of the smallest building block and studying how the different architecture choices affect performance. Among the various building blocks needed, special emphasis has been placed on the following: • the Single-Photon Avalanche Diode (SPAD), a photodiode able to detect photons one by one; • the front-end circuitry of this diode, commonly called quenching and recharge circuit; • the Time-to-Digital Converter (TDC), which determines the timing performance of the pixel. The proposed architectural exploration provides a comprehensive insight into the design space of the pixel, allowing to determine the optimum design points in terms of sensor sensitivity, linearity or signal to noise ratio, thus helping designers to navigate through non-straightforward trade-offs. The proposed TDC is based on a voltage-controlled ring oscillator, since this architecture provides moderate time resolutions while keeping the footprint, the power, and conversion time relatively small. Two pseudo-differential delay stages have been studied, one with cross-coupled PMOS transistors and the other with cross-coupled inverters. Analytical studies and simulations have shown that cross-coupled inverters are the most appropriate to implement the TDC because they achieve better time resolution with smaller energy per conversion than cross-coupled PMOS transistor stages. A 1.3×1.3 mm2 pixel has been implemented in an 110 nm CMOS image sensor technology, to have the benefits of sub-micron technologies along with the cleanliness of CMOS image sensor technologies. The fabricated chips have been used to characterize the single-photon avalanche diodes. The results agree with expectations: a maximum photon detection probability of 46 % and a median dark count rate of 0.4 Hz/µm2 with an excess voltage of 3 V. Furthermore, the characterization of the TDC shows that the time resolution is below 100 ps, which agrees with post-layout simulations. The differential non-linearity is ±0.4LSB, and the integral non-linearity is ±6.1LSB. Photoemission occurs during characterization - an indication that the avalanches are not quenched properly. The cause of this has been identified to be in the design of the SPAD and the quenching circuit. SPADs are sensitive devices which maximum reverse current must be well defined and limited by the quenching circuit, otherwise unwanted effects like excessive cross-talk, noise, and power consumption may happen. Although this issue limits the operation of the implemented pixel, the information obtained during the characterization will help to avoid mistakes in future implementations

CMOS SPAD-based image sensor for single photon counting and time of flight imaging

The facility to capture the arrival of a single photon, is the fundamental limit to the detection of quantised electromagnetic radiation. An image sensor capable of capturing a picture with this ultimate optical and temporal precision is the pinnacle of photo-sensing. The creation of high spatial resolution, single photon sensitive, and time-resolved image sensors in complementary metal oxide semiconductor (CMOS) technology offers numerous benefits in a wide field of applications. These CMOS devices will be suitable to replace high sensitivity charge-coupled device (CCD) technology (electron-multiplied or electron bombarded) with significantly lower cost and comparable performance in low light or high speed scenarios. For example, with temporal resolution in the order of nano and picoseconds, detailed three-dimensional (3D) pictures can be formed by measuring the time of flight (TOF) of a light pulse. High frame rate imaging of single photons can yield new capabilities in super-resolution microscopy. Also, the imaging of quantum effects such as the entanglement of photons may be realised. The goal of this research project is the development of such an image sensor by exploiting single photon avalanche diodes (SPAD) in advanced imaging-specific 130nm front side illuminated (FSI) CMOS technology. SPADs have three key combined advantages over other imaging technologies: single photon sensitivity, picosecond temporal resolution and the facility to be integrated in standard CMOS technology. Analogue techniques are employed to create an efficient and compact imager that is scalable to mega-pixel arrays. A SPAD-based image sensor is described with 320 by 240 pixels at a pitch of 8μm and an optical efficiency or fill-factor of 26.8%. Each pixel comprises a SPAD with a hybrid analogue counting and memory circuit that makes novel use of a low-power charge transfer amplifier. Global shutter single photon counting images are captured. These exhibit photon shot noise limited statistics with unprecedented low input-referred noise at an equivalent of 0.06 electrons. The CMOS image sensor (CIS) trends of shrinking pixels, increasing array sizes, decreasing read noise, fast readout and oversampled image formation are projected towards the formation of binary single photon imagers or quanta image sensors (QIS). In a binary digital image capture mode, the image sensor offers a look-ahead to the properties and performance of future QISs with 20,000 binary frames per second readout with a bit error rate of 1.7 x 10-3. The bit density, or cumulative binary intensity, against exposure performance of this image sensor is in the shape of the famous Hurter and Driffield densitometry curves of photographic film. Oversampled time-gated binary image capture is demonstrated, capturing 3D TOF images with 3.8cm precision in a 60cm range