A 1.2-V 10- µW NPN-Based Temperature Sensor in 65-nm CMOS With an Inaccuracy of 0.2 °C (3σ) From 70 °C to 125 °C

An NPN-based temperature sensor with digital output transistors has been realized in a 65-nm CMOS process. It achieves a batch-calibrated inaccuracy of ±0.5 ◦C (3¾) and a trimmed inaccuracy of ±0.2 ◦C (3¾) over the temperature range from −70 ◦C to 125 ◦C. This performance is obtained by the use of NPN transistors as sensing elements, the use of dynamic techniques, i.e. correlated double sampling and dynamic element matching, and a single room-temperature trim. The sensor draws 8.3 μA from a 1.2-V supply and occupies an area of 0.1 mm2

Design And Implementation Of Up-Conversion Mixer And Lc-Quadrature Oscillator For IEEE 802.11a WLAN Transmitter Application Utilizing 0.18 Pm CMOS Technology [TK7871.99.M44 H279 2008 f rb].

Perlumbaan implementasi litar terkamil radio, dengan kos yang rendah telah menggalakkan penggunaan teknologi CMOS. The drive for cost reduction has led to the use of CMOS technology for highly integrated radios

Analog integrated circuit design in ultra-thin oxide CMOS technologies with significant direct tunneling-induced gate current

The ability to do mixed-signal IC design in a CMOS technology has been a driving force for manufacturing personal mobile electronic products such as cellular phones, digital audio players, and personal digital assistants. As CMOS has moved to ultra-thin oxide technologies, where oxide thicknesses are less than 3 nm, this type of design has been threatened by the direct tunneling of carriers though the gate oxide. This type of tunneling, which increases exponentially with decreasing oxide thickness, is a source of MOSFET gate current. Its existence invalidates the simplifying design assumption of infinite gate resistance. Its problems are typically avoided by switching to a high-&kappa/metal gate technology or by including a second thick(er) oxide transistor. Both of these solutions come with undesirable increases in cost due to extra mask and processing steps. Furthermore, digital circuit solutions to the problems created by direct tunneling are available, while analog circuit solutions are not. Therefore, it is desirable that analog circuit solutions exist that allow the design of mixed-signal circuits with ultra-thin oxide MOSFETs. This work presents a methodology that develops these solutions as a less costly alternative to high-&kappa/metal gate technologies or thick(er) oxide transistors. The solutions focus on transistor sizing, DC biasing, and the design of current mirrors and differential amplifiers. They attempt to minimize, balance, and cancel the negative effects of direct tunneling on analog design in traditional (non-high-&kappa/metal gate) ultra-thin oxide CMOS technologies. They require only ultra-thin oxide devices and are investigated in a 65 nm CMOS technology with a nominal VDD of 1 V and a physical oxide thickness of 1.25 nm. A sub-1 V bandgap voltage reference that requires only ultra-thin oxide MOSFETs is presented (TC = 251.0 ppm/°C). It utilizes the developed methodology and illustrates that it is capable of suppressing the negative effects of direct tunneling. Its performance is compared to a thick-oxide voltage reference as a means of demonstrating that ultra-thin oxide MOSFETs can be used to build the analog component of a mixed-signal system

NEGATIVE BIAS TEMPERATURE INSTABILITY STUDIES FOR ANALOG SOC CIRCUITS

Negative Bias Temperature Instability (NBTI) is one of the recent reliability issues in sub threshold CMOS circuits. NBTI effect on analog circuits, which require matched device pairs and mismatches, will cause circuit failure. This work is to assess the NBTI effect considering the voltage and the temperature variations. It also provides a working knowledge of NBTI awareness to the circuit design community for reliable design of the SOC analog circuit. There have been numerous studies to date on the NBTI effect to analog circuits. However, other researchers did not study the implication of NBTI stress on analog circuits utilizing bandgap reference circuit. The reliability performance of all matched pair circuits, particularly the bandgap reference, is at the mercy of aging differential. Reliability simulation is mandatory to obtain realistic risk evaluation for circuit design reliability qualification. It is applicable to all circuit aging problems covering both analog and digital. Failure rate varies as a function of voltage and temperature. It is shown that PMOS is the reliabilitysusceptible device and NBTI is the most vital failure mechanism for analog circuit in sub-micrometer CMOS technology. This study provides a complete reliability simulation analysis of the on-die Thermal Sensor and the Digital Analog Converter (DAC) circuits and analyzes the effect of NBTI using reliability simulation tool. In order to check out the robustness of the NBTI-induced SOC circuit design, a bum-in experiment was conducted on the DAC circuits. The NBTI degradation observed in the reliability simulation analysis has given a clue that under a severe stress condition, a massive voltage threshold mismatch of beyond the 2mV limit was recorded. Bum-in experimental result on DAC proves the reliability sensitivity of NBTI to the DAC circuitry

A Low Power Integrated Circuit for Implantable Biosensor Incorporating an On-Chip FSK Modulator

Medical care has been significantly improved in recent years due to tremendous technological advancement in the field of CMOS technology. Among those improvements, integrated circuit design and sensing techniques have brought to the doctors more flexibility and accuracy of examinations of their patients. For example, a diabetic patient needs to visit a hospital on a regular basis for the examination and proper treatment. However, with the tremendous advancement in electronic technology, a patient can soon monitor his or her own blood glucose level at home or at office with an implantable sensor which can also trigger insulin pump attached to the body. The insulin delivery system can be precisely controlled by the electronics embedded in the implantable device. In this thesis, a low power integrated circuit for the implantable biosensor incorporating an on-chip FSK modulator is presented. This design has been fabricated using AMI 0.5-μm CMOS process available through MOSIS. The simulation and test results are also presented to verify its operation

A 0.82V supply and 23.4 ppm/0C current mirror assisted bandgap reference

Traditional BGR circuits require a 1.05V supply due to the VBE of the BJT. Deep submicron CMOS technologies are limiting the supply voltage to less than 940mV. Hence there is a strong motivation to design them at lower supply voltages. The supply voltage limitation in conventional BGR is described qualitatively in this paper. Further, a current mirror-assisted technique has been proposed to enable BGR operational at 0.82V supply. A prototype was developed in 65nm TSMC CMOS technology and post-layout simulation results were performed. A self-bias opamp has been exploited to minimize the systematic offset. Proposed BGR targeted at 450mV works from 0.82-1.05V supply without having any degradation in the performance while keeping the integrated noise of 15.2µV and accuracy of 23.4ppm/0C. Further, the circuit consumes 21µW of power and occupies 73*32µm2 silicon area

A Low-Voltage Mobility-Based Frequency Reference for Crystal-Less ULP Radios

The design of a 100 kHz frequency reference based on the electron mobility in a MOS transistor is presented. The proposed low-voltage low-power circuit requires no off-chip components, making it suitable for application in wireless sensor networks (WSN). After a single-point calibration, the spread of its output frequency is less than 1.1% (3 ) over the temperature range from -22 C to 85 C. Fabricated in a baseline 65 nm CMOS technology, the frequency reference circuit occupies 0.11 mm

Design of adaptive analog filters for magnetic front-end read channels

Esta tese estuda o projecto e o comportamento de filtros em tempo contínuo de muito-alta-frequência. A motivação deste trabalho foi a investigação de soluções de filtragem para canais de leitura em sistemas de gravação e reprodução de dados em suporte magnético, com custos e consumo (tamanho total inferior a 1 mm2 e consumo inferior a 1mW/polo), inferiores aos circuitos existentes. Nesse sentido, tal como foi feito neste trabalho, o rápido desenvolvimento das tecnologias de microelectrónica suscitou esforços muito significativos a nível mundial com o objectivo de se investigarem novas técnicas de realização de filtros em circuito integrado monolítico, especialmente em tecnologia CMOS (Complementary Metal Oxide Semiconductor). Apresenta-se um estudo comparativo a diversos níveis hierárquicos do projecto, que conduziu à realização e caracterização de soluções com as características desejadas. Num primeiro nível, este estudo aborda a questão conceptual da gravação e transmissão de sinal bem como a escolha de bons modelos matemáticos para o tratamento da informação e a minimização de erro inerente às aproximações na conformidade aos princípios físicos dos dispositivos caracterizados. O trabalho principal da tese é focado nos níveis hierárquicos da arquitectura do canal de leitura e da realização em circuito integrado do seu bloco principal – o bloco de filtragem. Ao nível da arquitectura do canal de leitura, apresenta-se um estudo alargado sobre as metodologias existentes de adaptação de sinal e recuperação de dados em suporte magnético. Este desígnio aparece no âmbito da proposta de uma solução de baixo custo, baixo consumo, baixa tensão de alimentação e baixa complexidade, alicerçada em tecnologia digital CMOS, para a realização de um sistema DFE (Decision Feedback Equalization) com base na igualização de sinal utilizando filtros integrados analógicos em tempo contínuo. Ao nível do projecto de realização do bloco de filtragem e das técnicas de implementação de filtros e dos seus blocos constituintes em circuito integrado, concluiu-se que a técnica baseada em circuitos de transcondutância e condensadores, também conhecida como filtros gm-C (ou transcondutância-C), é a mais adequada para a realização de filtros adaptativos em muito-alta-frequência. Definiram-se neste nível hierárquico mais baixo, dois subníveis de aprofundamento do estudo no âmbito desta tese, nomeadamente: a pesquisa e análise de estruturas ideais no projecto de filtros recorrendo a representações no espaço de estados; e, o estudo de técnicas de realização em tecnologia digital CMOS de circuitos de transcondutância para a implementação de filtros integrados analógicos em tempo contínuo. Na sequência deste estudo, apresentam-se e comparam-se duas estruturas de filtros no espaço de estados, correspondentes a duas soluções alternativas para a realização de um igualador adaptativo realizado por um filtro contínuo passa-tudo de terceira ordem, para utilização num canal de leitura de dados em suporte magnético. Como parte constituinte destes filtros, apresenta-se uma técnica de realização de circuitos de transcondutância, e de realização de condensadores lineares usando matrizes de transístores MOSFET para processamento de sinal em muito-alta-frequência realizada em circuito integrado usando tecnologia digital CMOS submicrométrica. Apresentam-se métodos de adaptação automática capazes de compensar os erros face aos valores nominais dos componentes, devidos às tolerâncias inerentes ao processo de fabrico, para os quais apresentamos os resultados de simulação e de medição experimental obtidos. Na sequência deste estudo, resultou igualmente a apresentação de um circuito passível de constituir uma solução para o controlo de posicionamento da cabeça de leitura em sistemas de gravação/reprodução de dados em suporte magnético. O bloco proposto é um filtro adaptativo de primeira ordem, com base nos mesmos circuitos de transcondutância e técnicas de igualação propostos e utilizados na implementação do filtro adaptativo de igualação do canal de leitura. Este bloco de filtragem foi projectado e incluído num circuito integrado (Jaguar) de controlo de posicionamento da cabeça de leitura realizado para a empresa ATMEL em Colorado Springs, e incluído num produto comercial em parceria com uma empresa escocesa utilizado em discos rígidos amovíveis.This thesis studies the design and behavior of continuous-time very-high-frequency filters. The motivation of this work was the search for filtering solutions for the readchannel in recording and reproduction of data on magnetic media systems, with costs and consumption (total size less than 1 mm2 and consumption under 1mW/pole), lower than the available circuits. Accordingly, as was done in this work, the rapid development of microelectronics technology raised very significant efforts worldwide in order to investigate new techniques for implementing such filters in monolithic integrated circuit, especially in CMOS technology (Complementary Metal Oxide Semiconductor). We present a comparative study on different hierarchical levels of the project, which led to the realization and characterization of solutions with the desired characteristics. In the first level, this study addresses the conceptual question of recording and transmission of signal and the choice of good mathematical models for the processing of information and minimization of error inherent in the approaches and in accordance with the principles of the characterized physical devices. The main work of this thesis is focused on the hierarchical levels of the architecture of the read channel and the integrated circuit implementation of its main block - the filtering block. At the architecture level of the read channel this work presents a comprehensive study on existing methodologies of adaptation and signal recovery of data on magnetic media. This project appears in the sequence of the proposed solution for a lowcost, low consumption, low voltage, low complexity, using CMOS digital technology for the performance of a DFE (Decision Feedback Equalization) based on the equalization of the signal using integrated analog filters in continuous time. At the project level of implementation of the filtering block and techniques for implementing filters and its building components, it was concluded that the technique based on transconductance circuits and capacitors, also known as gm-C filters is the most appropriate for the implementation of very-high-frequency adaptive filters. We defined in this lower level, two sub-levels of depth study for this thesis, namely: research and analysis of optimal structures for the design of state-space filters, and the study of techniques for the design of transconductance cells in digital CMOS circuits for the implementation of continuous time integrated analog filters. Following this study, we present and compare two filtering structures operating in the space of states, corresponding to two alternatives for achieving a realization of an adaptive equalizer by the use of a continuous-time third order allpass filter, as part of a read-channel for magnetic media devices. As a constituent part of these filters, we present a technique for the realization of transconductance circuits and for the implementation of linear capacitors using arrays of MOSFET transistors for signal processing in very-high-frequency integrated circuits using sub-micrometric CMOS technology. We present methods capable of automatic adjustment and compensation for deviation errors in respect to the nominal values of the components inherent to the tolerances of the fabrication process, for which we present the simulation and experimental measurement results obtained. Also as a result of this study, is the presentation of a circuit that provides a solution for the control of the head positioning on recording/playback systems of data on magnetic media. The proposed block is an adaptive first-order filter, based on the same transconductance circuits and equalization techniques proposed and used in the implementation of the adaptive filter for the equalization of the read channel. This filter was designed and included in an integrated circuit (Jaguar) used to control the positioning of the read-head done for ATMEL company in Colorado Springs, and part of a commercial product used in removable hard drives fabricated in partnership with a Scottish company

Design and debugging of multi-step analog to digital converters

With the fast advancement of CMOS fabrication technology, more and more signal-processing functions are implemented in the digital domain for a lower cost, lower power consumption, higher yield, and higher re-configurability. The trend of increasing integration level for integrated circuits has forced the A/D converter interface to reside on the same silicon in complex mixed-signal ICs containing mostly digital blocks for DSP and control. However, specifications of the converters in various applications emphasize high dynamic range and low spurious spectral performance. It is nontrivial to achieve this level of linearity in a monolithic environment where post-fabrication component trimming or calibration is cumbersome to implement for certain applications or/and for cost and manufacturability reasons. Additionally, as CMOS integrated circuits are accomplishing unprecedented integration levels, potential problems associated with device scaling – the short-channel effects – are also looming large as technology strides into the deep-submicron regime. The A/D conversion process involves sampling the applied analog input signal and quantizing it to its digital representation by comparing it to reference voltages before further signal processing in subsequent digital systems. Depending on how these functions are combined, different A/D converter architectures can be implemented with different requirements on each function. Practical realizations show the trend that to a first order, converter power is directly proportional to sampling rate. However, power dissipation required becomes nonlinear as the speed capabilities of a process technology are pushed to the limit. Pipeline and two-step/multi-step converters tend to be the most efficient at achieving a given resolution and sampling rate specification. This thesis is in a sense unique work as it covers the whole spectrum of design, test, debugging and calibration of multi-step A/D converters; it incorporates development of circuit techniques and algorithms to enhance the resolution and attainable sample rate of an A/D converter and to enhance testing and debugging potential to detect errors dynamically, to isolate and confine faults, and to recover and compensate for the errors continuously. The power proficiency for high resolution of multi-step converter by combining parallelism and calibration and exploiting low-voltage circuit techniques is demonstrated with a 1.8 V, 12-bit, 80 MS/s, 100 mW analog to-digital converter fabricated in five-metal layers 0.18-µm CMOS process. Lower power supply voltages significantly reduce noise margins and increase variations in process, device and design parameters. Consequently, it is steadily more difficult to control the fabrication process precisely enough to maintain uniformity. Microscopic particles present in the manufacturing environment and slight variations in the parameters of manufacturing steps can all lead to the geometrical and electrical properties of an IC to deviate from those generated at the end of the design process. Those defects can cause various types of malfunctioning, depending on the IC topology and the nature of the defect. To relive the burden placed on IC design and manufacturing originated with ever-increasing costs associated with testing and debugging of complex mixed-signal electronic systems, several circuit techniques and algorithms are developed and incorporated in proposed ATPG, DfT and BIST methodologies. Process variation cannot be solved by improving manufacturing tolerances; variability must be reduced by new device technology or managed by design in order for scaling to continue. Similarly, within-die performance variation also imposes new challenges for test methods. With the use of dedicated sensors, which exploit knowledge of the circuit structure and the specific defect mechanisms, the method described in this thesis facilitates early and fast identification of excessive process parameter variation effects. The expectation-maximization algorithm makes the estimation problem more tractable and also yields good estimates of the parameters for small sample sizes. To allow the test guidance with the information obtained through monitoring process variations implemented adjusted support vector machine classifier simultaneously minimize the empirical classification error and maximize the geometric margin. On a positive note, the use of digital enhancing calibration techniques reduces the need for expensive technologies with special fabrication steps. Indeed, the extra cost of digital processing is normally affordable as the use of submicron mixed signal technologies allows for efficient usage of silicon area even for relatively complex algorithms. Employed adaptive filtering algorithm for error estimation offers the small number of operations per iteration and does not require correlation function calculation nor matrix inversions. The presented foreground calibration algorithm does not need any dedicated test signal and does not require a part of the conversion time. It works continuously and with every signal applied to the A/D converter. The feasibility of the method for on-line and off-line debugging and calibration has been verified by experimental measurements from the silicon prototype fabricated in standard single poly, six metal 0.09-µm CMOS process

Energy challenges for ICT

The energy consumption from the expanding use of information and communications technology (ICT) is unsustainable with present drivers, and it will impact heavily on the future climate change. However, ICT devices have the potential to contribute signi - cantly to the reduction of CO2 emission and enhance resource e ciency in other sectors, e.g., transportation (through intelligent transportation and advanced driver assistance systems and self-driving vehicles), heating (through smart building control), and manu- facturing (through digital automation based on smart autonomous sensors). To address the energy sustainability of ICT and capture the full potential of ICT in resource e - ciency, a multidisciplinary ICT-energy community needs to be brought together cover- ing devices, microarchitectures, ultra large-scale integration (ULSI), high-performance computing (HPC), energy harvesting, energy storage, system design, embedded sys- tems, e cient electronics, static analysis, and computation. In this chapter, we introduce challenges and opportunities in this emerging eld and a common framework to strive towards energy-sustainable ICT