Design of CMOS integrated frequency synthesizers for ultra-wideband wireless communications systems

Ultra¬wide band (UWB) system is a breakthrough in wireless communication, as it provides data rate one order higher than existing ones. This dissertation focuses on the design of CMOS integrated frequency synthesizer and its building blocks used in UWB system. A mixer¬based frequency synthesizer architecture is proposed to satisfy the agile frequency hopping requirement, which is no more than 9.5 ns, three orders faster than conventional phase¬locked loop (PLL)¬based synthesizers. Harmonic cancela¬tion technique is extended and applied to suppress the undesired harmonic mixing components. Simulation shows that sidebands at 2.4 GHz and 5 GHz are below 36 dBc from carrier. The frequency synthesizer contains a novel quadrature VCO based on the capacitive source degeneration structure. The QVCO tackles the jeopardous ambiguity of the oscillation frequency in conventional QVCOs. Measurement shows that the 5¬GHz CSD¬QVCO in 0.18 µm CMOS technology draws 5.2 mA current from a 1.2 V power supply. Its phase noise is ¬120 dBc at 3 MHz offset. Compared with existing phase shift LC QVCOs, the proposed CSD¬QVCO presents better phase noise and power efficiency. Finally, a novel injection locking frequency divider (ILFD) is presented. Im¬plemented with three stages in 0.18 µm CMOS technology, the ILFD draws 3¬mA current from a 1.8¬V power supply. It achieves multiple large division ratios as 6, 12, and 18 with all locking ranges greater than 1.7 GHz and injection frequency up to 11 GHz. Compared with other published ILFDs, the proposed ILFD achieves the largest division ratio with satisfactory locking range

Review of Injected Oscillators

Oscillators are critical components in electrical and electronic engineering and other engineering and sciences. Oscillators are classified as free-running oscillators and injected oscillators. This chapter describes the background necessary for the analysis and design of injected oscillators. When an oscillator is injected by an external periodic signal mentioned as an injection signal, it is called an injected oscillator. Consequently, two phenomena occur in the injected oscillators: (I) pulling phenomena and (II) locking phenomena. For locking phenomena, the oscillation frequency of the injection signal must be near free-running oscillation frequency or its sub-/super-harmonics. Due to these phenomena are nonlinear phenomena, it is tough to achieve the exact equation or closed-form equation of them. Therefore, researchers are scrutinizing them by different analytical and numerical methods for accomplishing an exact inside view of their performances. In this chapter, injected oscillators are investigated in two main subjects: first, analytical methods on locking and pulling phenomena are reviewed, and second, applications of injected oscillators are reviewed such as injection-locked frequency dividers at the latter. Furthermore, methods of enhancing the locking range are introduced

Design of injection locked frequency divider in 65nm CMOS technology for mmW applications

In this paper, an Injection Locking Frequency Divider (ILFD) in 65 nm RF CMOS Technology for applications in millimeter-wave (mm-W) band is presented. The proposed circuit achieves 12.69% of locking range without any tuning mechanism and it can cover the entire mm-W band in presence of Process, Voltage and Temperature (PVT) variations by changing the Injection Locking Oscillator (ILO) voltage control. A design methodology flow is proposed for ILFD design and an overview regarding CMOS capabilities and opportunities for mm-W transceiver implementation is also exposed.Postprint (published version

Switched Capacitor Loop Filter 와 Source Switched Charge Pump 를 이용한 Phase-Locked Loop 의 설계

학위논문(석사) -- 서울대학교대학원 : 공과대학 전기·정보공학부, 2022.2. 정덕균.This thesis proposes a low integrated RMS jitter and low reference spur phase locked loop (PLL) using a switched capacitor loop filter and source switched charge pump. The PLL employs a single tunable charge pump which reduces current mis match across wide control voltage range and charge sharing effect to get high perfor mance of reference spur level. The switched capacitor loop filter is adopted to achieve insensitivity to temperature, supply voltage, and process variation of a resistor. The proposed PLL covers a wide frequency range and has a low integrated RMS jitter and low reference spur level to target various interface standards. The mechanism of switched capacitor loop filter and source switched charge pump is analyzed. Fabricated in 40 nm CMOS technology, the proposed analog PLL provides four phase for a quarter-rate transmitter, consumes 6.35 mW at 12 GHz using 750 MHz reference clock, and occupies an 0.008 mm2 with an integrated RMS jitter (10 kHz to 100 MHz) of 244.8 fs. As a result, the PLL achieves a figure of merit (FoM) of -244.2 dB with high power efficiency of 0.53 mW/GHz, and reference spur level is -60.3 dBc.본 논문에서는 낮은 RMS jitter 와 낮은 레퍼런스 스퍼를 가지며 스위치축전기 루프 필터와 소스 스위치 전하 펌프를 이용한 PLL 을 제안한다. 제안된 PLL 은 레퍼런스 스퍼의 성능을 위해 넓은 컨트롤 전압의 범위 동안 전류의 오차를 줄여주고 전하 공유 효과를 줄여주는 하나의 조절 가능한 전하 펌프를 사용하였다. 저항의 온도, 공급 전압, 공정 변화에 따른 민감도를 낮추기 위해 스위치 축전기 루프 필터가 사용되었다. 다양한 인터페이스 표준을 지원하기 위해 제안하는 PLL 은 넓은 주파수 범위를 지원하고 낮은 RMS jitter 와 낮은 레퍼런스 스퍼를 갖는다. 스위치 축전기 루프 필터와 소스 스위치 전하 펌프의 동작 원리에 대해 분석하였다. 40 nm CMOS 공정으로 제작되었으며, 제안된 회로는 quarter-rate 송신기를 위해 4 개의 phase 를 만들어내며 750 MHz 의 레퍼런스 클락을 이용하여 12 GHz 에서 6.35 mW 의 power 를 소모하고 0.008mm2 의 유효 면적을 차지하고 10 kHz 부터 100 MHz 까지 적분했을 때의 RMS jitter 값은 244.8fs 이다. 제안하는 PLL 은 -244.2 dB 의 FoM, 0.53 mW/GHz 의 power 효율을 달성했으며 레퍼런스 스퍼는 -60.3 dBc 이다CHAPTER 1 INTRODUCTION 1 1.1 MOTIVATION 1 1.2 THESIS ORGANIZATION 3 CHAPTER 2 BACKGROUNDS 4 2.1 CLOCK GENERATION IN SERIAL LINK 4 2.2 PLL BUILDING BLOCKS 6 2.2.1 OVERVIEW 6 2.2.2 PHASE FREQUENCY DETECTOR 7 2.2.3 CHARGE PUMP AND LOOP FILTER 9 2.2.4 VOLTAGE CONTROLLED OSCILLATOR 10 2.2.5 FREQUENCY DIVIDER 13 2.3 PLL LOOP ANALYSIS 15 CHAPTER 3 PLL WITH SWITCHED CAPACITOR LOOP FILTER AND SOURCE SWITCHED CHARGE PUMP 19 3.1 DESIGN CONSIDERATION 19 3.2 PROPOSED ARCHITECTURE 21 3.3 CIRCUIT IMPLEMENTATION 23 3.3.1 PHASE FREQUENCY DETECTOR 23 3.3.2 SOURCE SWITCHED CHARGE PUMP 26 3.3.3 SWITCHED CAPACITOR LOOP FILTER 30 3.3.4 VOLTAGE CONTROLLED OSCILLATOR 35 3.3.5 POST VCO AMPLIFIER 39 3.3.6 FREQUENCY DIVIDER 40 CHAPTER 4 MEASUREMENT RESULTS 43 4.1 CHIP PHOTOMICROGRAPH 43 4.2 MEASUREMENT SETUP 45 4.3 MEASURED PHASE NOISE AND REFERENCE SPUR 47 4.4 PERFORMANCE SUMMARY 50 CHAPTER 5 CONCLUSION 52 BIBLIOGRAPHY 53 초 록 58석

An Integrated Subharmonic Coupled-Oscillator Scheme for a 60-GHz Phased-Array Transmitter

This paper describes the design of an integrated coupled-oscillator array in SiGe for millimeter-wave applications. The design focuses on a scalable radio architecture where multiple dies are tiled to form larger arrays. A 2 × 2 oscillator array for a 60-GHz transmitter is fabricated with integrated power amplifiers and on-chip antennas. To lock between multiple dies, an injection-locking scheme appropriate for wire-bond interconnects is described. The 2 × 2 array demonstrates a 200–MHz locking range and 1 × 4 array formed by two adjacent chips has a 60-MHz locking range. The phase noise of the coupled oscillators is below 100 dBc/Hz at a 1-MHz offset when locked to an external reference. To the best of the authors’ knowledge, this is the highest frequency demonstration of coupled oscillators fabricated in a conventional silicon integrated-circuit process