94 research outputs found

    A 0.18µm CMOS UWB wireless transceiver for medical sensing applications

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    Recently, there is a new trend of demand of a biomedical device that can continuously monitor patient’s vital life index such as heart rate variability (HRV) and respiration rate. This desired device would be compact, wearable, wireless, networkable and low-power to enable proactive home monitoring of vital signs. This device should have a radar sensor portion and a wireless communication link all integrated in one small set. The promising technology that can satisfy these requirements is the impulse radio based Ultra-wideband (IR-UWB) technology. Since Federal Communications Commission (FCC) released the 3.1GHz-10.6GHz frequency band for UWB applications in 2002 [1], IR-UWB has received significant attention for applications in target positioning and wireless communications. IR-UWB employs extremely narrow Gaussian monocycle pulses or any other forms of short RF pulses to represent information. In this project, an integrated wireless UWB transceiver for the 3.1GHz-10.6GHz IR-UWB medical sensor was developed in the 0.18µm CMOS technology. This UWB transceiver can be employed for both radar sensing and communication purposes. The transceiver applies the On-Off Keying (OOK) modulation scheme to transmit short Gaussian pulse signals. The transmitter output power level is adjustable. The fully integrated UWB transceiver occupies a core area of 0.752mm^2 and the total die area of 1.274mm^2 with the pad ring inserted. The transceiver was simulated with overall power consumption of 40mW for radar sensing. The receiver is very sensitive to weak signals with a sensitivity of -73.01dBm. The average power of a single pulse is 9.8µW. The pulses are not posing any harm to human tissues. The sensing resolution and the target positioning precision are presumably sufficient for heart movement detection purpose in medical applications. This transceiver can also be used for high speed wireless data communications. The data transmission rate of 200 Mbps was achieved with an overall power consumption of 57mW. A combination of sensing and communications can be used to build a low power sensor

    Current reuse topology in UWB CMOS LNA

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    A New CMOS Fully Differential Low Noise Amplifier for Wideband Applications

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    In this paper, a multi-stage fully differential low noise amplifier (LNA) has been presented for wideband applications. A common-gate input stage is used to improve the input impedance matching and linearity. A common-source stage is also used as the second stage to enhance gain and reduce noise. A shunt-shunt feedback is employed to extend bandwidth and enhance linearity. The proposed low noise amplifier has been designed and simulated using RF-TSMC 0.18 μm CMOS process technology. In frequency band of 3.5-7.5 GHz, this amplifier has a flat power gain (S21) of 16.5 ± 1.5 dB, low noise figure (NF) of 3dB, input (S11) and output (S22) return losses less than -10 dB and high linearity with input thirdorder intercept point (IIP3) of -3dBm. It’s power consumption is also less than 10 mw with low power supply voltage of 0.8v

    A Review of CMOS Low Noise Amplifier for UWB System

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    A number of CMOS low noise amplifier (LNA) design for ultra-wideband (UWB) application had been produced with a various topology and techniques from year 2004 to 2016. The performance of LNA such as frequency bandwidth, noise figure, input and output matching and gain depend with the choice of the topology and technique used. Among the techniques introduced are current reuse, common source, resistive feedback, common gate, Chebyshev filter, distributed amplifier, folded cascade and negative feedback. This paper presents the collection of review about design of low noise amplifier used for UWB application in term of topology circuit. Thus, the problem and limitation of the CMOS LNA for UWB application are reviewed. Furthermore, recent developments of CMOS LNAs are examined and a comparison of the performance criteria of various topologies is presented

    LNA for UWB transceiver using 0.18µm CMOS Technology

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    An Ultra WideBand CMOS Low Noise Amplifier (LNA) is presented. Due to really low power consumption and extremely high data rates the UWB standard is bound to be popular in the consumer market. The LNA is the outer most part of an UWB transceiver. The LNA is responsible for providing enough gain to the signal with the least distortion possible. CMOS 0.18µm TSMC technology has been chosen for the design of the LNA at the transistor level. As many as five on chip inductors are implemented for the proper gain shaping over the frequency range of 3.1GHz to 10.6GHz. A noise figure of 3.98 dB is achieved to make sure noise contribution of the amplifier is as low as possible

    High performance building blocks for wireless receiver: multi-stage amplifiers and low noise amplifiers

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    Different wireless communication systems utilizing different standards and for multiple applications have penetrated the normal people's life, such as Cell phone, Wireless LAN, Bluetooth, Ultra wideband (UWB) and WiMAX systems. The wireless receiver normally serves as the primary part of the system, which heavily influences the system performance. This research concentrates on the designs of several important blocks of the receiver; multi-stage amplifier and low noise amplifier. Two novel multi-stage amplifier typologies are proposed to improve the bandwidth and reduce the silicon area for the application where a large capacitive load exists. They were designed using AMI 0.5 m µ CMOS technology. The simulation and measurement results show they have the best Figure-of-Merits (FOMs) in terms of small signal and large signal performances, with 4.6MHz and 9MHz bandwidth while consuming 0.38mW and 0.4mW power from a 2V power supply. Two Low Noise Amplifiers (LNAs) are proposed, with one designed for narrowband application and the other for UWB application. A noise reduction technique is proposed for the differential cascode Common Source LNA (CS-LNA), which reduces the LNA Noise Figure (NF), increases the LNA gain, and improves the LNA linearity. At the same time, a novel Common Gate LNA (CG-LNA) is proposed for UWB application, which has better linearity, lower power consumption, and reasonable noise performance. Finally a novel practical current injection built-in-test (BIT) technique is proposed for the RF Front-end circuits. If the off-chip component Lg and Rs values are well controlled, the proposed technique can estimate the voltage gain of the LNA with less than 1dB (8%) error

    Dual-band FSK receiver and building block design for UWB impulse radio

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    Master'sMASTER OF ENGINEERIN

    Design of a 3.1-4.8 GHZ RF front-end for an ultra wideband receiver

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    IEEE 802.15 High Rate Alternative PHY task group (TG3a) is working to define a protocol for Wireless Personal Area Networks (WPANs) which makes it possible to attain data rates of greater than 110Mbps. Ultra Wideband (UWB) technology utilizing frequency band of 3.168 GHz 10.6 GHz is an emerging solution to this with data rates of 110, 200 and 480 Mbps. Initially, UWB mode I devices using only 3.168 GHz 4.752 GHz have been proposed. Low Noise Amplifier (LNA) and I-Q mixers are key components constituting the RF front-end. Performance of these blocks is very critical to the overall performance of the receiver. In general, main considerations for the LNA are low noise, 50 broadband input matching, high gain with maximum flatness and good linearity. For the mixers, it is essential to attain low flicker noise performance coupled with good conversion gain. Proposed LNA architecture is a derivative of inductive source degenerated topology. Broadband matching at the LNA output is achieved using LC band-pass filter. To obtain high gain with maximum flatness, an LC band-pass filter is used at its output. Proposed LNA achieved a gain of 15dB, noise figure of less than 2.6dB and IIP3 of more than -7dBm. Mixer is a modified version of double balanced Gilbert cell topology where both I and Q channel mixers are merged together. Frequency response of each sub-band is matched by using an additional inductor, which further improves the noise figure and conversion gain. Current bleeding scheme is used to further reduce the low frequency noise. Mixer achieves average conversion gain of 14.5dB, IIP3 more than 6dBm and Double Side Band (DSB) noise figure less than 9dB. Maximum variation in conversion gain is desired to be less than 1dB. Both LNA and mixers are designed to be fabricated in TSMC 0.18µm CMOS technology
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