150 research outputs found

    Switchable wideband receiver frontend for 5G and satellite applications

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    Modern day communication architectures provides the requirement for interconnected devices offering very high data rate (more than 10 Gbps), low latency, and support for multiple service integration across existing communication generations with wideband spectrum coverage. An integrated satellite and 5G architecture switchable receiver frontend is presented in this thesis, consisting of a single pole double throw (SPDT) switch and two low noise amplifiers (LNAs) spanning X-band and K/Ka-band frequencies. The independent X-band LNA (8-12 GHz) has a gain of 38 dB at a centre design frequency of 9.8 GHz, while the K/Ka-band (23-28 GHz) has a gain of 29 GHz at a centre design frequency of 25.4 GHz. Both LNAs are a three-stage cascaded design with separated gate and drain lines for each transistor stage. The broadband high isolation single pole double throw (SPDT) switch based on a 0.15 μm gate length Indium Gallium Arsenide (InGaAs) pseudomorphic high electron transistor (pHEMT) is designed to operate at the frequency range of DC-50 GHz with less than 3 dB insertion loss and more than 40 dB isolation. The switch is designed to improve the overall stability of the system and the gain. A gain of about 25 dB is achieved at 9.8 GHz when the X-band arm is turned on and the K/Ka-band is turned off. A gain of about 23 dB is achieved at 25.4 GHz when the K/Ka-band arm is turned on and the X-band arm is off. This presented switchable receiver frontend is suitable for radar applications, 5G mobile applications, and future broadband receivers in the millimetre wave frequency range

    Feedback methods for inductorless bandwidth extension and linearisation of post-amplifiers in optical receiver frontends

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    Optical communication is increasingly important in today's telecommunications. It is not only a key component in long-haul infrastructure, but is also being brought into new applications within the datacentre, at the circuit board and integrated circuit level, and in next generation mobile networks. This thesis proposes feedback tuning approaches in order to address two challenges within optical receiver analog frontend circuits: a) the dynamic response of a prior bandwidth extension technique; and b) linearity optimisation. To address dynamic response, we begin with an inductorless method of bandwidth extension using positive feedback loops. In a multi-stage post-amplifier with local positive feedback loops, we propose an approach which tunes each positive feedback gain separately, and demonstrate that this achieves better dynamic response and eye opening than the prior equal-feedback-gain approach. We additionally propose root-locus analysis as a means of characterising dynamic response, and suggest some design guidelines based on this analysis. To address linearity optimisation, we propose the use of an interleaving negative-feedback post-amplifier topology, previously proposed only for bandwidth extension. We investigate the relationship between the feedback gains and linearity and develop a design approach for linearity optimisation. We then designed and fabricated two 70 dB 6 GHz optical receiver circuits, making use of two different post-amplifiers, in order to compare different design approaches. We achieved a linearity of 0.08 dBVrms OIP3 (quasi-static) and a THD of 0.195\% at 1 GHz

    HIGH PERFORMANCE CMOS WIDE-BAND RF FRONT-END WITH SUBTHRESHOLD OUT OF BAND SENSING

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    In future, the radar/satellite wireless communication devices must support multiple standards and should be designed in the form of system-on-chip (SoC) so that a significant reduction happen on cost, area, pins, and power etc. However, in such device, the design of a fully on-chip CMOS wideband receiver front-end that can process several radar/satellite signal simultaneously becomes a multifold complex problem. Further, the inherent high-power out-of-band (OB) blockers in radio spectrum will make the receiver more non-linear, even sometimes saturate the receiver. Therefore, the proper blocker rejection techniques need to be incorporated. The primary focus of this research work is the development of a CMOS high-performance low noise wideband receiver architecture with a subthreshold out of band sensing receiver. Further, the various reconfigurable mixer architectures are proposed for performance adaptability of a wideband receiver for incoming standards. Firstly, a high-performance low- noise bandwidthenhanced fully differential receiver is proposed. The receiver composed of a composite transistor pair noise canceled low noise amplifier (LNA), multi-gate-transistor (MGTR) trans-conductor amplifier, and passive switching quad followed by Tow Thomas bi-quad second order filter based tarns-impedance amplifier. An inductive degenerative technique with low-VT CMOS architecture in LNA helps to improve the bandwidth and noise figure of the receiver. The full receiver system is designed in UMC 65nm CMOS technology and measured. The packaged LNA provides a power gain 12dB (including buffer) with a 3dB bandwidth of 0.3G – 3G, noise figure of 1.8 dB having a power consumption of 18.75mW with an active area of 1.2mm*1mm. The measured receiver shows 37dB gain at 5MHz IF frequency with 1.85dB noise figure and IIP3 of +6dBm, occupies 2mm*1.2mm area with 44.5mW of power consumption. Secondly, a 3GHz-5GHz auxiliary subthreshold receiver is proposed to estimate the out of blocker power. As a redundant block in the system, the cost and power minimization of the auxiliary receiver are achieved via subthreshold circuit design techniques and implementing the design in higher technology node (180nm CMOS). The packaged auxiliary receiver gives a voltage gain of 20dB gain, the noise figure of 8.9dB noise figure, IIP3 of -10dBm and 2G-5GHz bandwidth with 3.02mW power consumption. As per the knowledge, the measured results of proposed main-high-performancereceiver and auxiliary-subthreshold-receiver are best in state of art design. Finally, the various viii reconfigurable mixers architectures are proposed to reconfigure the main-receiver performance according to the requirement of the selected communication standard. The down conversion mixers configurability are in the form of active/passive and Input (RF) and output (IF) bandwidth reconfigurability. All designs are simulated in 65nm CMOS technology. To validate the concept, the active/ passive reconfigurable mixer configuration is fabricated and measured. Measured result shows a conversion gain of 29.2 dB and 25.5 dB, noise figure of 7.7 dB and 10.2 dB, IIP3 of -11.9 dBm and 6.5 dBm in active and passive mode respectively. It consumes a power 9.24mW and 9.36mW in passive and active case with a bandwidth of 1 to 5.5 GHz and 0.5 to 5.1 GHz for active/passive case respectively

    Ultra-wideband and highly linear 43-97 GHz receiver front-end

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    This research presents a wideband mmWave receiver front-end that covers the frequency range from 43 to 97 GHz, supporting the operation in the major parts of the V-, E- and W-bands. The front-end incorporates a passive mixer-first topology to achieve high linearity and wideband performance along with an optimum operational instantaneous bandwidth. In addition, it implements the multi-gate gm3 cancellation technique at the IF amplifiers to preserve the linearity and provide gain at the IF section. Image rejection capabilities using a current mode transformer based IF 90o coupler is implemented on chip and demonstrated with measurements. The front-end is fabricated on the Globelfoundries 22nm FD-SOI CMOS process and demonstrates an ultra-wideband performance across the frequency range 43-97 GHz (2.25:1 bandwidth) with image rejection of up to 32 dB, IIP3 of 1.6-5.2 dBm and gain of 15 dB. Furthermore, the measurement results show that the front-end supports high speed modulated signals of up to 6 Gbps 64QAM modulation data.M.S

    A CMOS spectrum analyzer frontend for cognitive radio achieving +25dBm IIP3 and −169 dBm/Hz DANL

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    A dual RF-receiver preceded by discrete-step attenuators is implemented in 65nm CMOS and operates from 0.3– 1.0 GHz. The noise of the receivers is reduced by cross-correlating the two receiver outputs in the digital baseband, allowing attenuation of the RF input signal to increase linearity. With this technique a displayed average noise level below -169 dBm/Hz is obtained with +25 dBm IIP3, giving a spurious-free dynamic range of 89 dB in 1 MHz resolution bandwidth

    Current reuse topology in UWB CMOS LNA

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    Technology Advances for Radio Astronomy

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    The field of radio astronomy continues to provide fundamental contributions to the understanding of the evolution, and inner workings of, our universe. It has done so from its humble beginnings, where single antennas and receivers were used for observation, to today's focal plane arrays and interferometers. The number of receiving elements (pixels) in these instruments is quickly growing, currently approaching one hundred. For the instruments of tomorrow, the number of receiving elements will be in the thousands. Such instruments will enable researchers to peer deeper into the fabric of our universe and do so at faster survey speeds. They will provide enormous capability, both for unraveling today's mysteries as well as for the discovery of new phenomena. Among other challenges, producing the large numbers of low-noise amplifiers required for these instruments will be no easy task. The work described in this thesis advances the state of the art in three critical areas, technological advancements necessary for the future design and manufacturing of thousands of low-noise amplifiers. These areas being: the automated, cryogenic, probing of \diameter100 mm indium phosphide wafers; a system for measuring the noise parameters of devices at cryogenic temperatures; and the development of low-noise, silicon germanium amplifiers for terahertz mixer receivers. The four chapters that comprise the body of this work detail the background, design, assembly, and testing involved in these contributions. Also included is a brief survey of noise parameters, the knowledge of which is fundamental to the design of low-noise amplifiers and the optimization of the system noise temperature for large, dense, interferometers.</p

    Amplifiers in Biomedical Engineering: A Review from Application Perspectives

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    Continuous monitoring and treatment of various diseases with biomedical technologies and wearable electronics has become significantly important. The healthcare area is an important, evolving field that, among other things, requires electronic and micro-electromechanical technologies. Designed circuits and smart devices can lead to reduced hospitalization time and hospitals equipped with high-quality equipment. Some of these devices can also be implanted inside the body. Recently, various implanted electronic devices for monitoring and diagnosing diseases have been presented. These instruments require communication links through wireless technologies. In the transmitters of these devices, power amplifiers are the most important components and their performance plays important roles. This paper is devoted to collecting and providing a comprehensive review on the various designed implanted amplifiers for advanced biomedical applications. The reported amplifiers vary with respect to the class/type of amplifier, implemented CMOS technology, frequency band, output power, and the overall efficiency of the designs. The purpose of the authors is to provide a general view of the available solutions, and any researcher can obtain suitable circuit designs that can be selected for their problem by reading this survey
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