Physics-Based Electromigration Modeling and Analysis and Optimization

Long-term reliability is a major concern in modern VLSI design. Literature has shown that reliability gets worse as technology advances. It is expected that the future VLSI systems would have shorter reliability-induced lifetime comparing with previous generations. Being one of the most serious reliability effects, electromigration (EM) is a physical phenomenon of the migration of metal atoms due to the momentum exchange between atoms and the conducting electrons. It can cause wire resistance change or open circuit and result in functional failure of the circuit. Power-ground networks are the most vulnerable part to EM effect among all the interconnect wires since the current flow on this part is the largest on the chip. With new generation oftechnology node and aggressive design strategies, more accurate and efficient EM models are required. However, traditional EM approaches are very conservative and cannot meet current aggressive design strategies. Besides circuit level, EM also need to be thoroughly studied in system level due to limited power and temperature budgets among cores on chip. This research focuses on developing physical level EM model for VLSI circuits and system level EM optimization for multi-core systems in order to overcome the aforementioned problems. Specifically, for physical level, we develop two EM immortality check methods and a power grid EM check method. Firstly, a voltage based EM immortality analysis has been developed. Immortality condition in nucleation phase can be determined fast and accurately for multi-segment interconnect wires. Secondly, a saturation volume based incubation phase immortality check method has been proposed. This method can further reduce the redundancy in VLSI circuit design by immortality check in multiphase. Furthermore, both immortality check methods are integrated into a new power grid EM check methodology (EMspice) as filter for EM analysis. These filters can accelerate the simulation by filtering out immortal trees so that we only need to do simulation on fewer trees that are mortal. Coupled EM simulation considering both hydrostatic stress and electronic current/voltage in the power grid network will be applied to these mortal trees. This tool can work seamlessly with commercial synthesis flow. Besides physical level reliability models, system level reliability optimization is also discussed in this research. A deep reinforcement learning based EM optimization has been proposed for multi-core system. Both long term reliability effect (hard error) and transient soft error are considered. Energy can be optimized with all the reliability and other constraints fast and accurately compared to existing reliability management techniques. Last but not least, a scheduling based reliability optimization method for multi-core systems has been proposed. NBTI, HCI and EM are considered jointly. Lifetime of the system can be improved significantly compared to traditional methods which mainly focus on utilization

Thermal Management for Dependable On-Chip Systems

This thesis addresses the dependability issues in on-chip systems from a thermal perspective. This includes an explanation and analysis of models to show the relationship between dependability and tempature. Additionally, multiple novel methods for on-chip thermal management are introduced aiming to optimize thermal properties. Analysis of the methods is done through simulation and through infrared thermal camera measurements

Dependable Embedded Systems

This Open Access book introduces readers to many new techniques for enhancing and optimizing reliability in embedded systems, which have emerged particularly within the last five years. This book introduces the most prominent reliability concerns from today’s points of view and roughly recapitulates the progress in the community so far. Unlike other books that focus on a single abstraction level such circuit level or system level alone, the focus of this book is to deal with the different reliability challenges across different levels starting from the physical level all the way to the system level (cross-layer approaches). The book aims at demonstrating how new hardware/software co-design solution can be proposed to ef-fectively mitigate reliability degradation such as transistor aging, processor variation, temperature effects, soft errors, etc. Provides readers with latest insights into novel, cross-layer methods and models with respect to dependability of embedded systems; Describes cross-layer approaches that can leverage reliability through techniques that are pro-actively designed with respect to techniques at other layers; Explains run-time adaptation and concepts/means of self-organization, in order to achieve error resiliency in complex, future many core systems

A Holistic Solution for Reliability of 3D Parallel Systems

As device scaling slows down, emerging technologies such as 3D integration and carbon nanotube field-effect transistors are among the most promising solutions to increase device density and performance. These emerging technologies offer shorter interconnects, higher performance, and lower power. However, higher levels of operating temperatures and current densities project significantly higher failure rates. Moreover, due to the infancy of the manufacturing process, high variation, and defect densities, chip designers are not encouraged to consider these emerging technologies as a stand-alone replacement for Silicon-based transistors. The goal of this dissertation is to introduce new architectural and circuit techniques that can work around high-fault rates in the emerging 3D technologies, improving performance and reliability comparable to Silicon. We propose a new holistic approach to the reliability problem that addresses the necessary aspects of an effective solution such as detection, diagnosis, repair, and prevention synergically for a practical solution. By leveraging 3D fabric layouts, it proposes the underlying architecture to efficiently repair the system in the presence of faults. This thesis presents a fault detection scheme by re-executing instructions on idle identical units that distinguishes between transient and permanent faults while localizing it to the granularity of a pipeline stage. Furthermore, with the use of a dynamic and adaptive reconfiguration policy based on activity factors and temperature variation, we propose a framework that delivers a significant improvement in lifetime management to prevent faults due to aging. Finally, a design framework that can be used for large-scale chip production while mitigating yield and variation failures to bring up Carbon Nano Tube-based technology is presented. The proposed framework is capable of efficiently supporting high-variation technologies by providing protection against manufacturing defects at different granularities: module and pipeline-stage levels.PHDComputer Science & EngineeringUniversity of Michigan, Horace H. Rackham School of Graduate Studieshttp://deepblue.lib.umich.edu/bitstream/2027.42/168118/1/javadb_1.pd

Multi-criteria optimization for energy-efficient multi-core systems-on-chip

The steady down-scaling of transistor dimensions has made possible the evolutionary progress leading to today’s high-performance multi-GHz microprocessors and core based System-on-Chip (SoC) that offer superior performance, dramatically reduced cost per function, and much-reduced physical size compared to their predecessors. On the negative side, this rapid scaling however also translates to high power densities, higher operating temperatures and reduced reliability making it imperative to address design issues that have cropped up in its wake. In particular, the aggressive physical miniaturization have increased CMOS fault sensitivity to the extent that many reliability constraints pose threat to the device normal operation and accelerate the onset of wearout-based failures. Among various wearout-based failure mechanisms, Negative biased temperature instability (NBTI) has been recognized as the most critical source of device aging. The urge of reliable, low-power circuits is driving the EDA community to develop new design techniques, circuit solutions, algorithms, and software, that can address these critical issues. Unfortunately, this challenge is complicated by the fact that power and reliability are known to be intrinsically conflicting metrics: traditional solutions to improve reliability such as redundancy, increase of voltage levels, and up-sizing of critical devices do contrast with traditional low-power solutions, which rely on compact architectures, scaled supply voltages, and small devices. This dissertation focuses on methodologies to bridge this gap and establishes an important link between low-power solutions and aging effects. More specifically, we proposed new architectural solutions based on power management strategies to enable the design of low-power, aging aware cache memories. Cache memories are one of the most critical components for warranting reliable and timely operation. However, they are also more susceptible to aging effects. Due to symmetric structure of a memory cell, aging occurs regardless of the fact that a cell (or word) is accessed or not. Moreover, aging is a worst-case matric and line with worst-case access pattern determines the aging of the entire cache. In order to stop the aging of a memory cell, it must be put into a proper idle state when a cell (or word) is not accessed which require proper management of the idleness of each atomic unit of power management. We have proposed several reliability management techniques based on the idea of cache partitioning to alleviate NBTI-induced aging and obtain joint energy and lifetime benefits. We introduce graceful degradation mechanism which allows different cache blocks into which a cache is partitioned to age at different rates. This implies that various sub-blocks become unreliable at different times, and the cache keeps functioning with reduced efficiency. We extended the capabilities of this architecture by integrating the concept of reconfigurable caches to maintain the performance of the cache throughout its lifetime. By this strategy, whenever a block becomes unreliable, the remaining cache is reconfigured to work as a smaller size cache with only a marginal degradation of performance. Many mission-critical applications require guaranteed lifetime of their operations and therefore the hardware implementing their functionality. Such constraints are usually enforced by means of various reliability enhancing solutions mostly based on redundancy which are not energy-friendly. In our work, we have proposed a novel cache architecture in which a smart use of cache partitions for redundancy allows us to obtain cache that meet a desired lifetime target with minimal energy consumption

DEEP SUBMICRON CMOS VLSI CIRCUIT RELIABILITY MODELING, SIMULATION AND DESIGN

CMOS VLSI circuit reliability modeling and simulation have attracted intense research interest in the last two decades, and as a result almost all IC Design For Reliability (DFR) tools now try to incrementally simulate device wearout mechanisms in iterative ways. These DFR tools are capable of accurately characterizing the device wearout process and predicting its impact on circuit performance. Nevertheless, excessive simulation time and tedious parameter testing process often limit popularity of these tools in product design and fabrication. This work develops a new SPICE reliability simulation method that shifts the focus of reliability analysis from device wearout to circuit functionality. A set of accelerated lifetime models and failure equivalent circuit models are proposed for the most common MOSFET intrinsic wearout mechanisms, including Hot Carrier Injection (HCI), Time Dependent Dielectric Breakdown (TDDB), and Negative Bias Temperature Instability (NBTI). The accelerated lifetime models help to identify the most degraded transistors in a circuit in terms of the device's terminal voltage and current waveforms. Then corresponding failure equivalent circuit models are incorporated into the circuit to substitute these identified transistors. Finally, SPICE simulation is performed again to check circuit functionality and analyze the impact of device wearout on circuit operation. Device wearout effects are lumped into a very limited number of failure equivalent circuit model parameters, and circuit performance degradation and functionality are determined by the magnitude of these parameters. In this new method, it is unnecessary to perform a large number of small-step SPICE simulation iterations. Therefore, simulation time is obviously shortened in comparison to other tools. In addition, a reduced set of failure equivalent circuit model parameters, rather than a large number of device SPICE model parameters, need to be accurately characterized at each interim wearout process. Thus device testing and parameter extraction work are also significantly simplified. These advantages will allow circuit designers to perform quick and efficient circuit reliability analyses and to develop practical guidelines for reliable electronic designs

Characterisation and mitigation of long-term degradation effects in programmable logic

Reliability has always been an issue in silicon device engineering, but until now it has been managed by the carefully tuned fabrication process. In the future the underlying physical limitations of silicon-based electronics, plus the practical challenges of manufacturing with such complexity at such a small scale, will lead to a crunch point where transistor-level reliability must be forfeited to continue achieving better productivity. Field-programmable gate arrays (FPGAs) are built on state-of-the-art silicon processes, but it has been recognised for some time that their distinctive characteristics put them in a favourable position over application-specific integrated circuits in the face of the reliability challenge. The literature shows how a regular structure, interchangeable resources and an ability to reconfigure can all be exploited to detect, locate, and overcome degradation and keep an FPGA application running. To fully exploit these characteristics, a better understanding is needed of the behavioural changes that are seen in the resources that make up an FPGA under ageing. Modelling is an attractive approach to this and in this thesis the causes and effects are explored of three important degradation mechanisms. All are shown to have an adverse affect on FPGA operation, but their characteristics show novel opportunities for ageing mitigation. Any modelling exercise is built on assumptions and so an empirical method is developed for investigating ageing on hardware with an accelerated-life test. Here, experiments show that timing degradation due to negative-bias temperature instability is the dominant process in the technology considered. Building on simulated and experimental results, this work also demonstrates a variety of methods for increasing the lifetime of FPGA lookup tables. The pre-emptive measure of wear-levelling is investigated in particular detail, and it is shown by experiment how di fferent reconfiguration algorithms can result in a significant reduction to the rate of degradation

Ultra thin ultrafine-pitch chip-package interconnections for embedded chip last approach

Ever growing demands for portability and functionality have always governed the electronic technology innovations. IC downscaling with Moore s law and system miniaturization with System-On-Package (SOP) paradigm has resulted and will continue to result in ultraminiaturized systems with unprecedented functionality at reduced cost. The trend towards 3D silicon system integration is expected to downscale IC I/O pad pitches from 40µm to 1- 5 µm in future. Device- to- system board interconnections are typically accomplished today with either wire bonding or solders. Both of these are incremental and run into either electrical or mechanical barriers as they are extended to higher density of interconnections. Alternate interconnection approaches such as compliant interconnects typically require lengthy connections and are therefore limited in terms of electrical properties, although expected to meet the mechanical requirements. As supply currents will increase upto 220 A by 2012, the current density will exceed the maximum allowable current density of solders. The intrinsic delay and electromigration in solders are other daunting issues that become critical at nanometer size technology nodes. In addition, formation of intermetallics is also a bottleneck that poses significant mechanical issues. Recently, many research groups have investigated various techniques for copper-copper direct bonding. Typically, bonding is carried out at 400oC for 30 min followed by annealing for 30 min. High thermal budget in such process makes it less attractive for integrated systems because of the associated process incompatibilities. In the present study, copper-copper bonding at ultra fine-pitch using advanced nano-conductive and non-conductive adhesives is evaluated. The proposed copper-copper based interconnects using advanced conductive and non-conductive adhesives will be a new fundamental and comprehensive paradigm to solve all the four barriers: 1) I/O pitch 2) Electrical performance 3) Reliability and 4) Cost. This thesis investigates the mechanical integrity and reliability of copper-copper bonding using advanced adhesives through test vehicle fabrication and reliability testing. Test vehicles were fabricated using low cost electro-deposition techniques and assembled onto glass carrier. Experimental results show that proposed copper-copper bonding using advanced adhesives could potentially meet all the system performance requirements for the emerging micro/nano-systems.M.S.Committee Chair: Prof. Rao R Tummala; Committee Member: Dr. Jack Moon; Committee Member: Dr. P M Ra

Metodologia de monitorização do envelhecimento para aplicações de auto-teste embutido

Dissertação de mestrado, Engenharia Eléctrica e Electrónica, Instituto Superior de Engenharia, Universidade do Algarve, 2013The high integration level achieved as well as complexity and performance enhancements in new nanometer technologies make IC (Integrated Circuits) products very difficult to test. Moreover, long term operation brings aging cumulative degradations, due to new processes and materials that lead to emerging defect phenomena and the consequence are products with increased variability in their behaviour, more susceptible to delay-faults and with a reduced expected lifecycle. The main objectives of this thesis are twofold, as explained in the following. First, a new software tool is presented to generate HDL (Hardware Description Language) for BIST (Built-In Self-Test) structures, aiming delay-faults, and inserted the new auto-test functionality in generic sequential CMOS circuits. The BIST methodology used implements a scan based BIST approach, using a new BIST controller to implement the Launch-On-Shift (LOS) and Launch-On-Capture (LOC) delay-fault techniques. Second, it will be shown that multi-VDD tests in circuits with BIST infra-structures can be used to detect gross delay-faults during on-field operations, and consequently can be used as an aging sensor methodology during circuits’ lifecycle. The discrete set of multi-VDD BIST sessions generates a Voltage Signature Collection (VSC) and the presence of a delay-fault (or a physical defect) modifies the VSC collection, allowing the aging sensor capability. The proposed Design for Testability (DFT) method and tool are demonstrated with extensive SPICE simulation using three ITC’99 benchmark circuits.O elevado nível de integração atingida, complexidade, assim como performances melhoradas em novas tecnologias nanométricas tornam os produtos em circuitos integrados tecnológicos muito difíceis de testar. Para além disso, a operação a longo prazo produz degradações cumulativas pelo envelhecimento dos circuitos, devido a novos processos e materiais que conduzem a novos defeitos e a consequência são produtos com maior variabilidade no seu funcionamento, mais susceptíveis às faltas de atraso e com um tempo de vida menor. Os principais objectivos desta tese são dois, como explicado em seguida. Primeiro, é apresentada uma nova ferramenta de software para gerar estruturas de auto-teste integrado (BIST, Built-In Self-Test) descritas em linguagens de descrição de hardware (HDL, Hardware Description Language), com o objectivo de detectar faltas de atraso, e inserir a nova funcionalidade de auto-teste em circuitos genéricos sequenciais CMOS. A metodologia de BIST utilizada implementa um procedimento baseado em caminhos de deslocamento, utilizando um novo controlador de BIST para implementar técnicas de faltas de atraso, como Launch-On-Shift (LOS) e Launch-On-Capture (LOC). Segundo, irá ser mostrado que testes multi-VDD em circuitos com infra-estruturas de BIST podem ser usados para detectar faltas de atraso grosseiras durante a operação no terreno e, consequentemente, pode ser usado como uma metodologia de sensor de envelhecimento durante o tempo de vida dos circuitos. Um número discreto de sessões BIST multi-VDD geram uma Colecção de Assinaturas de Tensão (Voltage Signature Collection, VSC) e a presença de uma falta de atraso (ou um defeito físico) faz modificar a colecção VSC, comportando-se como sensor de envelhecimento. O trabalho foi iniciado com o estudo do estado da arte nesta área. Assim, foram estudadas e apresentadas no capítulo 2 as principais técnicas de DfT (Design for Testability) disponíveis e utilizadas pela indústria, nomeadamente, as técnicas de SP (Scan Path), de BIST e as técnicas de scan para delay-faults, LOS e LOC. No capítulo 3, ainda referente ao estudo sobre o estado da arte, é apresentado o estudo sobre os fenómenos que provocam o envelhecimento dos circuitos digitais, nomeadamente o NBTI (Negative Bias Temperature Instability), que é considerado o factor mais relevante no envelhecimento de circuitos integrados (especialmente em nanotecnologias). Em seguida, iniciou-se o desenvolvimento do primeiro objectivo. Relativamente a este assunto, começou-se por definir qual o comportamento das estruturas de BIST e como se iriam interligar. O comportamento foi descrito, bloco a bloco, em VHDL comportamental, ao nível RTL (Register Transfer Level). Esta descrição foi então validada por simulação, utilizando a ferramenta ModelSim. Posteriormente, esta descrição comportamental foi sintetizada através da ferramenta Synopsys, com a colaboração do INESC-ID em Lisboa (instituição parceira nestes trabalhos de investigação), e foi obtida uma netlist ao nível de porta lógica, que foi guardada utilizando a linguagem de descrição de hardware Verilog. Assim, obtiveram-se dois tipos de descrição dos circuitos BIST: uma comportamental, em VHDL, e outra estrutural, em Verilog (esta descrição estrutural em Verilog irá permitir, posteriormente, fazer a simulação e análise de envelhecimento). A nova estrutura de BIST obtida é baseada no modelo clássico de BIST, mas apresenta algumas alterações, nomeadamente ao nível da geração de vectores de teste e no controlo e aplicação desses vectores ao circuito. Estas modificações têm como objectivo aumentar a detecção de faltas e permitir o teste de faltas de atraso. É composto por três blocos denominados LFSRs (Linear Feedback Shift Registers), um utilizado para gerar os vectores pseudo-aleatórios para as entradas primárias do circuito, outro para gerar os vectores para a entrada do scan path, e o último utilizado como contador para controlar o número de bits introduzidos no scan path. Relativamente ao controlador, este foi especificamente desenhado para controlar um teste com estratégia de test-per-scan (ou seja, um teste baseado no caminho de varrimento existente no circuito) e tem uma codificação de estados que permite implementar as estratégias de teste de faltas de atraso, Launch-On-Shift (LOS) e Launch-On-Capture (LOC). Na secção de saída do novo modelo de BIST, o processo de compactação usa o mesmo princípio do modelo tradicional, utilizando neste caso um MISR (Multiple Input Signature Register). Ainda relativamente ao primeiro objectivo, seguiu-se o desenvolvimento da ferramenta BISTGen, para automatizar a geração das estruturas de BIST atrás mencionadas, nos dois tipos de descrição, e automaticamente inserir estas estruturas num circuito de teste (CUT, Circuit Under Test). A aplicação de software deve permitir o manuseamento de dois tipos de informação relativa ao circuito: descrição do circuito pelo seu comportamento, em VHDL, e descrição do circuito pela sua estrutura, em Verilog. Deve ter como saída a descrição de hardware supra citada, inserindo todos os blocos integrantes da estrutura num só ficheiro, contendo apenas um dos tipos de linguagem (Verilog ou VHDL), escolhida previamente pelo utilizador. No caso dos LFSRs e do MISR, o programa deve permitir ao utilizador a escolha de LFSRs do tipo linear ou do tipo modular (também conhecidos por fibonacci ou galois), e deve também possuir suporte para automaticamente seleccionar de uma base de dados quais as realimentações necessárias que conduzem à definição do polinómio primitivo para o LFSR. Será necessário ainda criar uma estrutura em base de dados para gerir os nomes e o número de entradas e saídas do circuito submetido a teste, a que chamamos CUT, de forma a simplificar o processo de renomeação que o utilizador poderá ter de efectuar. Dar a conhecer ao programa os nomes das entradas e saídas do CUT é de relevante importância, uma vez que a atribuição de nomes para as entradas e saídas pode vir em qualquer língua ou dialecto, não coincidindo com os nomes padrão normalmente atribuídos. Relativamente às duas linguagens que o programa recebe através do CUT na sua entrada, no caso VHDL após inserir BIST o ficheiro final terá sempre uma estrutura semelhante, qualquer que seja o ficheiro a ser tratado, variando apenas com o hardware apresentado pelo CUT. No entanto, para o caso Verilog a situação será diferente, uma vez que o programa tem de permitir que o ficheiro final gerado possa surgir de duas formas dependendo da escolha desejada. A primeira forma que o software deve permitir para o caso Verilog é gerar um ficheiro contendo módulos, de uma forma semelhante ao que acontece no caso VHDL. No entanto, deve permitir também a obtenção, caso o utilizador solicite, de um ficheiro unificado, sem sub-módulos nos blocos, para que o ficheiro final contenha apenas uma única estrutura, facilitando a sua simulação e análise de envelhecimento nas etapas seguintes. Relativamente ao segundo objectivo, com base no trabalho anterior já efectuado em metodologias para detectar faltas de delay em circuitos com BIST, foi definida uma metodologia de teste para, durante a vida útil dos circuitos, permitir avaliar como vão envelhecendo, tratando-se assim de uma metodologia de monitorização de envelhecimento para circuitos com BIST. Um aspecto fundamental para a realização deste segundo objectivo é podermos prever como o circuito vai envelhecer. Para realizar esta tarefa, sempre subjectiva, utilizou-se uma ferramenta desenvolvida no ISE-UAlg em outra tese de mestrado anterior a esta, a ferramenta AgingCalc. Esta ferramenta inicia-se com a definição, por parte do utilizador, das probabilidades de operação das entradas primárias do circuito (probabilidades de cada entrada estar a ‘0’ ou a ‘1’). De notar que este é o processo subjectivo existente na análise de envelhecimento, já que é impossível prever como um circuito irá ser utilizado. Com base nestas probabilidades de operação, o programa utiliza a estrutura do circuito para calcular, numa primeira instância, as probabilidades dos nós do circuito estarem a ‘0’ ou a ‘1’, e numa segunda instância as probabilidades de cada transístor PMOS estar ligado e com o seu canal em stress (com uma tensão negativa aplicada à tensão VGS e um campo eléctrico aplicado ao dieléctrico da porta). Utilizando fórmulas definidas na literatura para modelação do parâmetro Vth (tensão limiar de condução) do transístor de acordo com um envelhecimento produzido pelo efeito NBTI (Negative Bias Temperature Instability), o programa calcula, para cada ano ou tempo de envelhecimento a considerar, as variações ocorridas no Vth de cada transístor PMOS, com base nas probabilidades e condições de operação previamente definidas, obtendo um novo Vth para cada transístor (os valores prováveis para os transístores envelhecidos). Em seguida, o programa instancia o simulador HSPICE para simular as portas lógicas do circuito, utilizando uma descrição que contém os Vth calculados. Esta simulação permite calcular os atrasos em cada porta para cada ano de envelhecimento considerado, podendo em seguida calcular e obter a previsão para o envelhecimento de cada caminho combinatório do circuito. É de notar que, embora a previsão de envelhecimento seja subjectiva, pois depende de uma previsão de operação, é possível definir diferentes probabilidades de operação de forma a estabelecer limites prováveis para o envelhecimento de cada caminho. Tendo uma ferramenta que permite prever como o circuito irá envelhecer, é possível utilizá-la para modificar a estrutura do circuito e introduzir faltas de delay produzidas pelo envelhecimento por NBTI ao longo dos anos de operação (modelados pelo Vth dos transístores PMOS). Assim, no capítulo 5 irá ser mostrado que testes multi-VDD em circuitos com infra-estruturas de BIST podem ser usados para detectar faltas de atraso grosseiras durante a operação no terreno, podendo em alguns casos identificar variações provocadas pelo envelhecimento em caminhos curtos, e consequentemente, estes testes podem ser usados como uma metodologia de sensor de envelhecimento durante o tempo de vida dos circuitos. Um número discreto de sessões BIST multi-VDD geram uma Colecção de Assinaturas de Tensão (Voltage Signature Collection, VSC) e a presença de uma falta de atraso (ou um defeito físico) faz modificar a colecção VSC, comportando-se como sensor de envelhecimento. O objectivo será, especificando, fazer variar a tensão de alimentação, baixando o seu valor dentro de um determinado intervalo e submetendo o circuito a sucessivas sessões de BIST para cada valor de tensão, até que o circuito retorne uma assinatura diferente da esperada. Este procedimento de simulação será feito para uma maturidade de até 20 anos, podendo o incremento não ser unitário. Na realidade os circuitos nos primeiros anos de vida em termos estatísticos não sofrem envelhecimento a ponto de causar falhas por esse efeito. As falhas que podem acelerar o processo de envelhecimento estão relacionadas com defeitos significativos no processo de fabrico mas que ainda assim não são suficientes para no início do seu ciclo de vida fazer o circuito falhar, tornando-se efectivas após algum tempo de utilização. Os métodos e ferramentas propostos de DfT são demonstrados com extensas simulações VHDL e SPICE, utilizando circuitos de referência