2,796 research outputs found

    Generalized Gray Codes for Local Rank Modulation

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    We consider the local rank-modulation scheme in which a sliding window going over a sequence of real-valued variables induces a sequence of permutations. Local rank-modulation is a generalization of the rank-modulation scheme, which has been recently suggested as a way of storing information in flash memory. We study Gray codes for the local rank-modulation scheme in order to simulate conventional multi-level flash cells while retaining the benefits of rank modulation. Unlike the limited scope of previous works, we consider code constructions for the entire range of parameters including the code length, sliding window size, and overlap between adjacent windows. We show our constructed codes have asymptotically-optimal rate. We also provide efficient encoding, decoding, and next-state algorithms.Comment: 7 pages, 1 figure, shorter version was submitted to ISIT 201

    Constant-Weight Gray Codes for Local Rank Modulation

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    We consider the local rank-modulation scheme in which a sliding window going over a sequence of real-valued variables induces a sequence of permutations. The local rank-modulation, as a generalization of the rank-modulation scheme, has been recently suggested as a way of storing information in flash memory. We study constant-weight Gray codes for the local rank-modulation scheme in order to simulate conventional multi-level flash cells while retaining the benefits of rank modulation. We provide necessary conditions for the existence of cyclic and cyclic optimal Gray codes. We then specifically study codes of weight 2 and upper bound their efficiency, thus proving that there are no such asymptotically-optimal cyclic codes. In contrast, we study codes of weight 3 and efficiently construct codes which are asymptotically-optimal

    Constant-Weight Gray Codes for Local Rank Modulation

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    We consider the local rank-modulation scheme in which a sliding window going over a sequence of real-valued variables induces a sequence of permutations. Local rank- modulation is a generalization of the rank-modulation scheme, which has been recently suggested as a way of storing information in flash memory. We study constant-weight Gray codes for the local rank- modulation scheme in order to simulate conventional multi-level flash cells while retaining the benefits of rank modulation. We provide necessary conditions for the existence of cyclic and cyclic optimal Gray codes. We then specifically study codes of weight 2 and upper bound their efficiency, thus proving that there are no such asymptotically-optimal cyclic codes. In contrast, we study codes of weight 3 and efficiently construct codes which are asymptotically-optimal. We conclude with a construction of codes with asymptotically-optimal rate and weight asymptotically half the length, thus having an asymptotically-optimal charge difference between adjacent cells

    Correcting Charge-Constrained Errors in the Rank-Modulation Scheme

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    We investigate error-correcting codes for a the rank-modulation scheme with an application to flash memory devices. In this scheme, a set of n cells stores information in the permutation induced by the different charge levels of the individual cells. The resulting scheme eliminates the need for discrete cell levels, overcomes overshoot errors when programming cells (a serious problem that reduces the writing speed), and mitigates the problem of asymmetric errors. In this paper, we study the properties of error-correcting codes for charge-constrained errors in the rank-modulation scheme. In this error model the number of errors corresponds to the minimal number of adjacent transpositions required to change a given stored permutation to another erroneous one—a distance measure known as Kendall’s τ-distance.We show bounds on the size of such codes, and use metric-embedding techniques to give constructions which translate a wealth of knowledge of codes in the Lee metric to codes over permutations in Kendall’s τ-metric. Specifically, the one-error-correcting codes we construct are at least half the ball-packing upper bound

    Constructions of Rank Modulation Codes

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    Rank modulation is a way of encoding information to correct errors in flash memory devices as well as impulse noise in transmission lines. Modeling rank modulation involves construction of packings of the space of permutations equipped with the Kendall tau distance. We present several general constructions of codes in permutations that cover a broad range of code parameters. In particular, we show a number of ways in which conventional error-correcting codes can be modified to correct errors in the Kendall space. Codes that we construct afford simple encoding and decoding algorithms of essentially the same complexity as required to correct errors in the Hamming metric. For instance, from binary BCH codes we obtain codes correcting tt Kendall errors in nn memory cells that support the order of n!/(log2n!)tn!/(\log_2n!)^t messages, for any constant t=1,2,...t= 1,2,... We also construct families of codes that correct a number of errors that grows with nn at varying rates, from Θ(n)\Theta(n) to Θ(n2)\Theta(n^{2}). One of our constructions gives rise to a family of rank modulation codes for which the trade-off between the number of messages and the number of correctable Kendall errors approaches the optimal scaling rate. Finally, we list a number of possibilities for constructing codes of finite length, and give examples of rank modulation codes with specific parameters.Comment: Submitted to IEEE Transactions on Information Theor

    Compressed Encoding for Rank Modulation

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    Rank modulation has been recently proposed as a scheme for storing information in flash memories. While rank modulation has advantages in improving write speed and endurance, the current encoding approach is based on the "push to the top" operation that is not efficient in the general case. We propose a new encoding procedure where a cell level is raised to be higher than the minimal necessary subset -instead of all - of the other cell levels. This new procedure leads to a significantly more compressed (lower charge levels) encoding. We derive an upper bound for a family of codes that utilize the proposed encoding procedure, and consider code constructions that achieve that bound for several special cases
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