AI/ML Algorithms and Applications in VLSI Design and Technology

An evident challenge ahead for the integrated circuit (IC) industry in the nanometer regime is the investigation and development of methods that can reduce the design complexity ensuing from growing process variations and curtail the turnaround time of chip manufacturing. Conventional methodologies employed for such tasks are largely manual; thus, time-consuming and resource-intensive. In contrast, the unique learning strategies of artificial intelligence (AI) provide numerous exciting automated approaches for handling complex and data-intensive tasks in very-large-scale integration (VLSI) design and testing. Employing AI and machine learning (ML) algorithms in VLSI design and manufacturing reduces the time and effort for understanding and processing the data within and across different abstraction levels via automated learning algorithms. It, in turn, improves the IC yield and reduces the manufacturing turnaround time. This paper thoroughly reviews the AI/ML automated approaches introduced in the past towards VLSI design and manufacturing. Moreover, we discuss the scope of AI/ML applications in the future at various abstraction levels to revolutionize the field of VLSI design, aiming for high-speed, highly intelligent, and efficient implementations

DFM Techniques for the Detection and Mitigation of Hotspots in Nanometer Technology

With the continuous scaling down of dimensions in advanced technology nodes, process variations are getting worse for each new node. Process variations have a large influence on the quality and yield of the designed and manufactured circuits. There is a growing need for fast and efficient techniques to characterize and mitigate the effects of different sources of process variations on the design's performance and yield. In this thesis we have studied the various sources of systematic process variations and their effects on the circuit, and the various methodologies to combat systematic process variation in the design space. We developed abstract and accurate process variability models, that would model systematic intra-die variations. The models convert the variation in process into variation in electrical parameters of devices and hence variation in circuit performance (timing and leakage) without the need for circuit simulation. And as the analysis and mitigation techniques are studied in different levels of the design ow, we proposed a flow for combating the systematic process variation in nano-meter CMOS technology. By calculating the effects of variability on the electrical performance of circuits we can gauge the importance of the accurate analysis and model-driven corrections. We presented an automated framework that allows the integration of circuit analysis with process variability modeling to optimize the computer intense process simulation steps and optimize the usage of variation mitigation techniques. And we used the results obtained from using this framework to develop a relation between layout regularity and resilience of the devices to process variation. We used these findings to develop a novel technique for fast detection of critical failures (hotspots) resulting from process variation. We showed that our approach is superior to other published techniques in both accuracy and predictability. Finally, we presented an automated method for fixing the lithography hotspots. Our method showed success rate of 99% in fixing hotspots

Dependable Embedded Systems

This Open Access book introduces readers to many new techniques for enhancing and optimizing reliability in embedded systems, which have emerged particularly within the last five years. This book introduces the most prominent reliability concerns from today’s points of view and roughly recapitulates the progress in the community so far. Unlike other books that focus on a single abstraction level such circuit level or system level alone, the focus of this book is to deal with the different reliability challenges across different levels starting from the physical level all the way to the system level (cross-layer approaches). The book aims at demonstrating how new hardware/software co-design solution can be proposed to ef-fectively mitigate reliability degradation such as transistor aging, processor variation, temperature effects, soft errors, etc. Provides readers with latest insights into novel, cross-layer methods and models with respect to dependability of embedded systems; Describes cross-layer approaches that can leverage reliability through techniques that are pro-actively designed with respect to techniques at other layers; Explains run-time adaptation and concepts/means of self-organization, in order to achieve error resiliency in complex, future many core systems

Analog design for manufacturability: lithography-aware analog layout retargeting

As transistor sizes shrink over time in the advanced nanometer technologies, lithography effects have become a dominant contributor of integrated circuit (IC) yield degradation. Random manufacturing variations, such as photolithographic defect or spot defect, may cause fatal functional failures, while systematic process variations, such as dose fluctuation and defocus, can result in wafer pattern distortions and in turn ruin circuit performance. This dissertation is focused on yield optimization at the circuit design stage or so-called design for manufacturability (DFM) with respect to analog ICs, which has not yet been sufficiently addressed by traditional DFM solutions. On top of a graph-based analog layout retargeting framework, in this dissertation the photolithographic defects and lithography process variations are alleviated by geometrical layout manipulation operations including wire widening, wire shifting, process variation band (PV-band) shifting, and optical proximity correction (OPC). The ultimate objective of this research is to develop efficient algorithms and methodologies in order to achieve lithography-robust analog IC layout design without circuit performance degradation

Timing speculation and adaptive reliable overclocking techniques for aggressive computer systems

Computers have changed our lives beyond our own imagination in the past several decades. The continued and progressive advancements in VLSI technology and numerous micro-architectural innovations have played a key role in the design of spectacular low-cost high performance computing systems that have become omnipresent in today\u27s technology driven world. Performance and dependability have become key concerns as these ubiquitous computing machines continue to drive our everyday life. Every application has unique demands, as they run in diverse operating environments. Dependable, aggressive and adaptive systems improve efficiency in terms of speed, reliability and energy consumption. Traditional computing systems run at a fixed clock frequency, which is determined by taking into account the worst-case timing paths, operating conditions, and process variations. Timing speculation based reliable overclocking advocates going beyond worst-case limits to achieve best performance while not avoiding, but detecting and correcting a modest number of timing errors. The success of this design methodology relies on the fact that timing critical paths are rarely exercised in a design, and typical execution happens much faster than the timing requirements dictated by worst-case design methodology. Better-than-worst-case design methodology is advocated by several recent research pursuits, which exploit dependability techniques to enhance computer system performance. In this dissertation, we address different aspects of timing speculation based adaptive reliable overclocking schemes, and evaluate their role in the design of low-cost, high performance, energy efficient and dependable systems. We visualize various control knobs in the design that can be favorably controlled to ensure different design targets. As part of this research, we extend the SPRIT3E, or Superscalar PeRformance Improvement Through Tolerating Timing Errors, framework, and characterize the extent of application dependent performance acceleration achievable in superscalar processors by scrutinizing the various parameters that impact the operation beyond worst-case limits. We study the limitations imposed by short-path constraints on our technique, and present ways to exploit them to maximize performance gains. We analyze the sensitivity of our technique\u27s adaptiveness by exploring the necessary hardware requirements for dynamic overclocking schemes. Experimental analysis based on SPEC2000 benchmarks running on a SimpleScalar Alpha processor simulator, augmented with error rate data obtained from hardware simulations of a superscalar processor, are presented. Even though reliable overclocking guarantees functional correctness, it leads to higher power consumption. As a consequence, reliable overclocking without considering on-chip temperatures will bring down the lifetime reliability of the chip. In this thesis, we analyze how reliable overclocking impacts the on-chip temperature of a microprocessor and evaluate the effects of overheating, due to such reliable dynamic frequency tuning mechanisms, on the lifetime reliability of these systems. We then evaluate the effect of performing thermal throttling, a technique that clamps the on-chip temperature below a predefined value, on system performance and reliability. Our study shows that a reliably overclocked system with dynamic thermal management achieves 25% performance improvement, while lasting for 14 years when being operated within 353K. Over the past five decades, technology scaling, as predicted by Moore\u27s law, has been the bedrock of semiconductor technology evolution. The continued downscaling of CMOS technology to deep sub-micron gate lengths has been the primary reason for its dominance in today\u27s omnipresent silicon microchips. Even as the transition to the next technology node is indispensable, the initial cost and time associated in doing so presents a non-level playing field for the competitors in the semiconductor business. As part of this thesis, we evaluate the capability of speculative reliable overclocking mechanisms to maximize performance at a given technology level. We evaluate its competitiveness when compared to technology scaling, in terms of performance, power consumption, energy and energy delay product. We present a comprehensive comparison for integer and floating point SPEC2000 benchmarks running on a simulated Alpha processor at three different technology nodes in normal and enhanced modes. Our results suggest that adopting reliable overclocking strategies will help skip a technology node altogether, or be competitive in the market, while porting to the next technology node. Reliability has become a serious concern as systems embrace nanometer technologies. In this dissertation, we propose a novel fault tolerant aggressive system that combines soft error protection and timing error tolerance. We replicate both the pipeline registers and the pipeline stage combinational logic. The replicated logic receives its inputs from the primary pipeline registers while writing its output to the replicated pipeline registers. The organization of redundancy in the proposed Conjoined Pipeline system supports overclocking, provides concurrent error detection and recovery capability for soft errors, intermittent faults and timing errors, and flags permanent silicon defects. The fast recovery process requires no checkpointing and takes three cycles. Back annotated post-layout gate-level timing simulations, using 45nm technology, of a conjoined two-stage arithmetic pipeline and a conjoined five-stage DLX pipeline processor, with forwarding logic, show that our approach, even under a severe fault injection campaign, achieves near 100% fault coverage and an average performance improvement of about 20%, when dynamically overclocked

Regular cell design approach considering lithography-induced process variations

The deployment delays for EUVL, forces IC design to continue using 193nm wavelength lithography with innovative and costly techniques in order to faithfully print sub-wavelength features and combat lithography induced process variations. The effect of the lithography gap in current and upcoming technologies is to cause severe distortions due to optical diffraction in the printed patterns and thus degrading manufacturing yield. Therefore, a paradigm shift in layout design is mandatory towards more regular litho-friendly cell designs in order to improve line pattern resolution. However, it is still unclear the amount of layout regularity that can be introduced and how to measure the benefits and weaknesses of regular layouts. This dissertation is focused on searching the degree of layout regularity necessary to combat lithography variability and outperform the layout quality of a design. The main contributions that have been addressed to accomplish this objective are: (1) the definition of several layout design guidelines to mitigate lithography variability; (2) the proposal of a parametric yield estimation model to evaluate the lithography impact on layout design; (3) the development of a global Layout Quality Metric (LQM) including a Regularity Metric (RM) to capture the degree of layout regularity of a layout implementation and; (4) the creation of different layout architectures exploiting the benefits of layout regularity to outperform line-pattern resolution, referred as Adaptive Lithography Aware Regular Cell Designs (ALARCs). The first part of this thesis provides several regular layout design guidelines derived from lithography simulations so that several important lithography related variation sources are minimized. Moreover, a design level methodology, referred as gate biasing, is proposed to overcome systematic layout dependent variations, across-field variations and the non-rectilinear gate effect (NRG) applied to regular fabrics by properly configuring the drawn transistor channel length. The second part of this dissertation proposes a lithography yield estimation model to predict the amount of lithography distortion expected in a printed layout due to lithography hotspots with a reduced set of lithography simulations. An efficient lithography hotspot framework to identify the different layout pattern configurations, simplify them to ease the pattern analysis and classify them according to the lithography degradation predicted using lithography simulations is presented. The yield model is calibrated with delay measurements of a reduced set of identical test circuits implemented in a CMOS 40nm technology and thus actual silicon data is utilized to obtain a more realistic yield estimation. The third part of this thesis presents a configurable Layout Quality Metric (LQM) that considering several layout aspects provides a global evaluation of a layout design with a single score. The LQM can be leveraged by assigning different weights to each evaluation metric or by modifying the parameters under analysis. The LQM is here configured following two different set of partial metrics. Note that the LQM provides a regularity metric (RM) in order to capture the degree of layout regularity applied in a layout design. Lastly, this thesis presents different ALARC designs for a 40nm technology using different degrees of layout regularity and different area overheads. The quality of the gridded regular templates is demonstrated by automatically creating a library containing 266 cells including combinational and sequential cells and synthesizing several ITC'99 benchmark circuits. Note that the regular cell libraries only presents a 9\% area penalty compared to the 2D standard cell designs used for comparison and thus providing area competitive designs. The layout evaluation of benchmark circuits considering the LQM shows that regular layouts can outperform other 2D standard cell designs depending on the layout implementation.Los continuos retrasos en la implementación de la EUVL, fuerzan que el diseño de IC se realice mediante litografía de longitud de onda de 193 nm con innovadoras y costosas técnicas para poder combatir variaciones de proceso de litografía. La gran diferencia entre la longitud de onda y el tamaño de los patrones causa severas distorsiones debido a la difracción óptica en los patrones impresos y por lo tanto degradando el yield. En consecuencia, es necesario realizar un cambio en el diseño de layouts hacia diseños más regulares para poder mejorar la resolución de los patrones. Sin embargo, todavía no está claro el grado de regularidad que se debe introducir y como medir los beneficios y los perjuicios de los diseños regulares. El objetivo de esta tesis es buscar el grado de regularidad necesario para combatir las variaciones de litografía y mejorar la calidad del layout de un diseño. Las principales contribuciones para conseguirlo son: (1) la definición de diversas reglas de diseño de layout para mitigar las variaciones de litografía; (2) la propuesta de un modelo para estimar el yield paramétrico y así evaluar el impacto de la litografía en el diseño de layout; (3) el diseño de una métrica para analizar la calidad de un layout (LQM) incluyendo una métrica para capturar el grado de regularidad de un diseño (RM) y; (4) la creación de diferentes tipos de layout explotando los beneficios de la regularidad, referidos como Adaptative Lithography Aware Regular Cell Designs (ALARCs). La primera parte de la tesis, propone las diversas reglas de diseño para layouts regulares derivadas de simulaciones de litografía de tal manera que las fuentes de variación de litografía son minimizadas. Además, se propone una metodología de diseño para layouts regulares, referida como "gate biasing" para contrarrestar las variaciones sistemáticas dependientes del layout, las variaciones en la ventana de proceso del sistema litográfico y el efecto de puerta no rectilínea para configurar la longitud del canal del transistor correctamente. La segunda parte de la tesis, detalla el modelo de estimación del yield de litografía para predecir mediante un número reducido de simulaciones de litografía la cantidad de distorsión que se espera en un layout impreso debida a "hotspots". Se propone una eficiente metodología que identifica los distintos patrones de un layout, los simplifica para facilitar el análisis de los patrones y los clasifica en relación a la degradación predecida mediante simulaciones de litografía. El modelo de yield se calibra utilizando medidas de tiempo de un número reducido de idénticos circuitos de test implementados en una tecnología CMOS de 40nm y de esta manera, se utilizan datos de silicio para obtener una estimación realista del yield. La tercera parte de este trabajo, presenta una métrica para medir la calidad del layout (LQM), que considera diversos aspectos para dar una evaluación global de un diseño mediante un único valor. La LQM puede ajustarse mediante la asignación de diferentes pesos para cada métrica de evaluación o modificando los parámetros analizados. La LQM se configura mediante dos conjuntos de medidas diferentes. Además, ésta incluye una métrica de regularidad (RM) para capturar el grado de regularidad que se aplica en un diseño. Finalmente, esta disertación presenta los distintos diseños ALARC para una tecnología de 40nm utilizando diversos grados de regularidad y diferentes impactos en área. La calidad de estos diseños se demuestra creando automáticamente una librería de 266 celdas incluyendo celdas combinacionales y secuenciales y, sintetizando diversos circuitos ITC'99. Las librerías regulares solo presentan un 9% de impacto en área comparado con diseños de celdas estándar 2D y por tanto proponiendo diseños competitivos en área. La evaluación de los circuitos considerando la LQM muestra que los diseños regulares pueden mejorar otros diseños 2D dependiendo de la implementación del layout

Cross-Layer Approaches for an Aging-Aware Design of Nanoscale Microprocessors

Thanks to aggressive scaling of transistor dimensions, computers have revolutionized our life. However, the increasing unreliability of devices fabricated in nanoscale technologies emerged as a major threat for the future success of computers. In particular, accelerated transistor aging is of great importance, as it reduces the lifetime of digital systems. This thesis addresses this challenge by proposing new methods to model, analyze and mitigate aging at microarchitecture-level and above

Monitor amb control strategies to reduce the impact of process variations in digital circuits

As CMOS technology scales down, Process, Voltage, Temperature and Ageing (PVTA) variations have an increasing impact on the performance and power consumption of electronic devices. These issues may hold back the continuous improvement of these devices in the near future. There are several ways to face the variability problem: to increase the operating margins of maximum clock frequency, the implementation of lithographic friendly layout styles, and the last one and the focus of this thesis, to adapt the circuit to its actual manufacturing and environment conditions by tuning some of the adjustable parameters once the circuit has been manufactured. The main challenge of this thesis is to develop a low-area variability compensation mechanism to automatically mitigate PVTA variations in run-time, i.e. while integrated circuit is running. This implies the development of a sensor to obtain the most accurate picture of variability, and the implementation of a control block to knob some of the electrical parameters of the circuit.A mesura que la tecnologia CMOS escala, les variacions de Procés, Voltatge, Temperatura i Envelliment (PVTA) tenen un impacte creixent en el rendiment i el consum de potència dels dispositius electrònics. Aquesta problemàtica podria arribar a frenar la millora contínua d'aquests dispositius en un futur proper. Hi ha diverses maneres d'afrontar el problema de la variabilitat: relaxar el marge de la freqüència màxima d'operació, implementar dissenys físics de xips més fàcils de litografiar, i per últim i com a tema principal d'aquesta tesi, adaptar el xip a les condicions de fabricació i d'entorn mitjançant la modificació d'algun dels seus paràmetres ajustables una vegada el circuit ja ha estat fabricat. El principal repte d'aquesta tesi és desenvolupar un mecanisme de compensació de variabilitat per tal de mitigar les variacions PVTA de manera automàtica en temps d'execució, és a dir, mentre el xip està funcionant. Això implica el desenvolupament d'un sensor capaç de mesurar la variabilitat de la manera més acurada possible, i la implementació d'un bloc de control que permeti l'ajust d'alguns dels paràmetres elèctrics dels circuits

Resilient Design for Process and Runtime Variations

The main objective of this thesis is to tackle the impact of parameter variations in order to improve the chip performance and extend its lifetime