Absorbance based light emitting diode optical sensors and sensing devices

The ever increasing demand for in situ monitoring of health, environment and security has created a need for reliable, miniaturised sensing devices. To achieve this, appropriate analytical devices are required that possess operating characteristics of reliability, low power consumption, low cost, autonomous operation capability and compatibility with wireless communications systems. The use of light emitting diodes (LEDs) as light sources is one strategy, which has been successfully applied in chemical sensing. This paper summarises the development and advancement of LED based chemical sensors and sensing devices in terms of their configuration and application, with the focus on transmittance and reflectance absorptiometric measurements

A practical degradation based method to predict long-term moisture incursion and colour change in high power LEDs

The effect of relative humidity on LEDs and how the moisture incursion is associated to the color shift is studied. This paper proposes a different approach to describe the lumen degradation of LEDs due to the long-term effects of humidity. Using the lumen degradation data of different types of LEDs under varying conditions of relative humidity, a humidity based degradation model (HBDM) is developed. A practical estimation method from the degradation behaviour is proposed to quantitatively gauge the effect of moisture incursion by means of a humidity index. This index demonstrates a high correlation with the color shift indicated by the LED's yellow to blue output intensity ratio. Physical analyses of the LEDs provide a qualitative validation of the model, which provides good accuracy with longer periods of moisture exposure. The results demonstrate that the HBDM is an effective indicator to predict the extent of the long-term impact of humidity and associated relative color shift

Influence of dislocation loops on the near infrared light emission from silicon diodes

The infrared light emission of forward-biased silicon diodes is studied. Through ion implantation and anneal, dislocation loops were created near the diode junction. These loops suppress the light emission at the band-to-band peak around 1.1 μm. The so-called D1 line at 1.5 μm is strongly enhanced by these dislocation loops. We report a full study of photoluminescence and electroluminescence of these diodes. The results lead to new insights for the manufacturing approach of practical infrared light sources in integrated circuit

Thermal And Mechanical Analysis of High-power Light-emitting Diodes with Ceramic Packages

In this paper we present the thermal and mechanical analysis of high-power light-emitting diodes (LEDs) with ceramic packages. Transient thermal measurements and thermo-mechanical simulation were performed to study the thermal and mechanical characteristics of ceramic packages. Thermal resistance from the junction to the ambient was decreased from 76.1 oC/W to 45.3 oC/W by replacing plastic mould to ceramic mould for LED packages. Higher level of thermo-mechanical stresses in the chip were found for LEDs with ceramic packages despite of less mismatching coefficients of thermal expansion comparing with plastic packages. The results suggest that the thermal performance of LEDs can be improved by using ceramic packages, but the mounting process of the high power LEDs with ceramic packages is critically important and should be in charge of delaminating interface layers in the packages.Comment: Submitted on behalf of TIMA Editions (http://irevues.inist.fr/tima-editions

Room-temperature-operation visible-emission semiconductor diode lasers

There were two main approaches taken to develop shorter wavelength lasers. (1) Based on (AlGa)As and liquid-phase epitaxy, significant new results were obtained: Properties of these laser diodes (power output, spectra, and beam patterns), materials considerations, laser theory, and growth problems are discussed. The design of (AlGa)As layers is discussed from the vertical point of view, and various design curves are given. Horizontal structural requirements are also discussed. Experimental results from measurements done as a function of hydrostatic pressure are correlated with other results. (2) The first heterojunction laser structures using GaAs sub l-x P sub x and In sub y Ga sub l-y P at compositions, where the lattice constants are matched, were grown using vapor-phase growth technology and are described in detail, including experimental device results. Threshold current densities from 3,000 to 5,000 A per sq cm. and emission wavelengths from 6,520 A to 6,640 A were obtained at 77 K. The limiting factor in these devices is nonradiative recombination at the heterojunctions. Life tests on facet-coated (AlGa)As CW diodes are reported

Performance of LED-Based Fluorescence Microscopy to Diagnose Tuberculosis in a Peripheral Health Centre in Nairobi.

Sputum microscopy is the only tuberculosis (TB) diagnostic available at peripheral levels of care in resource limited countries. Its sensitivity is low, particularly in high HIV prevalence settings. Fluorescence microscopy (FM) can improve performance of microscopy and with the new light emitting diode (LED) technologies could be appropriate for peripheral settings. The study aimed to compare the performance of LED-FM versus Ziehl-Neelsen (ZN) microscopy and to assess feasibility of LED-FM at a low level of care in a high HIV prevalence country

A dose-ranging, parallel group, split-face, single-blind phase II study of light emitting diode-red light (LED-RL) for skin scarring prevention: study protocol for a randomized controlled trial.

BackgroundSkin fibrosis is a significant global health problem that affects over 100 million people annually and has a profoundly negative impact on quality of life. Characterized by excessive fibroblast proliferation and collagen deposition, skin fibrosis underlies a wide spectrum of dermatologic conditions ranging from pathologic scars secondary to injury (e.g., burns, surgery, trauma) to immune-mediated diseases. Effective anti-scarring therapeutics remain an unmet need, underscoring the importance of developing novel approaches to treat and prevent skin fibrosis. Our in vitro data show that light emitting diode-red light (LED-RL) can modulate key cellular and molecular processes involved in skin fibrosis. In two phase I clinical trials (STARS 1 and STARS 2), we demonstrated the safety and tolerability of LED-RL at fluences of 160 J/cm2 up to 480 J/cm2 on normal human skin.Methods/designCURES (Cutaneous Understanding of Red-light Efficacy on Scarring) is a dose-ranging, randomized, parallel group, split-face, single-blind, mock-controlled phase II study to evaluate the efficacy of LED-RL to limit post-surgical skin fibrosis in subjects undergoing elective mini-facelift surgery. Thirty subjects will be randomly allocated to three treatment groups to receive LED-RL phototherapy or temperature-matched mock irradiation (control) to either periauricular incision site at fluences of 160 J/cm2, 320 J/cm2, or 480 J/cm2. Starting one week post-surgery (postoperative days 4-8), treatments will be administered three times weekly for three consecutive weeks, followed by efficacy assessments at 30 days, 3 months, and 6 months. The primary endpoint is the difference in scar pliability between LED-RL-treated and control sites as determined by skin elasticity and induration measurements. Secondary outcomes include clinical and photographic evaluations of scars, 3D skin imaging analysis, histological and molecular analyses, and adverse events.DiscussionLED-RL is a therapeutic modality of increasing importance in dermatology, and has the potential to limit skin fibrosis clinically by decreasing dermal fibroblast activity and collagen production. The administration of LED-RL phototherapy in the early postoperative period may optimize wound healing and prevent excessive scarring. The results from this study may change the current treatment paradigm for fibrotic skin diseases and help to pioneer LED-RL as a safe, non-invasive, cost-effective, portable, at-home therapy for scars.Trial registrationClinicalTrials.gov, NCT03795116 . Registered on 20 December 2018

Effects of Humidity on the Electro-Optical-Thermal Characteristics of High-Power LEDs

LEDs are subjected to environments with high moisture in many applications. In this paper, the experiments reveal photometric and colorimetric degradation at high humidity. Corresponding spectral power analysis and parameter extraction indicate that the flip-chip bonded LED samples show accelerated chip failure compared to the conventionally bonded samples. The chip-related failure induces greater heat accumulation, which correlates with the increase in heating power observed in the package. However, the temperature rise and thermal resistance for the flip-chip bonded LEDs do not increase substantially as compared to the conventionally bonded LEDs. This is because the junction temperature can be reduced with a flip-chip die-bonding configuration where the heat generated in the LED chip is dissipated effectively onto the AlN substrate, thereby reducing the increase in temperature rise and thermal resistance. The experimental results are supported by evaluation of the derivative structure functions. In addition, as the thermal resistance of the LED package varies with different humidity levels, there is a need to specify the conditions of humidity in data sheets as LED manufacturers routinely specify a universal thermal resistance value under a fixed operating condition

Fabrication technology for high light-extraction ultraviolet thin-film flip-chip (UV TFFC) LEDs grown on SiC

The light output of deep ultraviolet (UV-C) AlGaN light-emitting diodes (LEDs) is limited due to their poor light extraction efficiency (LEE). To improve the LEE of AlGaN LEDs, we developed a fabrication technology to process AlGaN LEDs grown on SiC into thin-film flip-chip LEDs (TFFC LEDs) with high LEE. This process transfers the AlGaN LED epi onto a new substrate by wafer-to-wafer bonding, and by removing the absorbing SiC substrate with a highly selective SF6 plasma etch that stops at the AlN buffer layer. We optimized the inductively coupled plasma (ICP) SF6 etch parameters to develop a substrate-removal process with high reliability and precise epitaxial control, without creating micromasking defects or degrading the health of the plasma etching system. The SiC etch rate by SF6 plasma was ~46 \mu m/hr at a high RF bias (400 W), and ~7 \mu m/hr at a low RF bias (49 W) with very high etch selectivity between SiC and AlN. The high SF6 etch selectivity between SiC and AlN was essential for removing the SiC substrate and exposing a pristine, smooth AlN surface. We demonstrated the epi-transfer process by fabricating high light extraction TFFC LEDs from AlGaN LEDs grown on SiC. To further enhance the light extraction, the exposed N-face AlN was anisotropically etched in dilute KOH. The LEE of the AlGaN LED improved by ~3X after KOH roughening at room temperature. This AlGaN TFFC LED process establishes a viable path to high external quantum efficiency (EQE) and power conversion efficiency (PCE) UV-C LEDs.Comment: 22 pages, 6 figures. (accepted in Semiconductor Science and Technology, SST-105156.R1 2018