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2 research outputs found
How can a cutting-edge gallium nitride high-electron-mobility transistor encounter catastrophic failure within the acceptable temperature range
Author
Munk-Nielsen Stig
Song Sungyoung
Uhrenfeldt Christian
Publication venue
'Institute of Electrical and Electronics Engineers (IEEE)'
Publication date
01/07/2020
Field of study
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VBN
Lifetime Prediction Modeling of Non-Insulated TO-220AB Packages with Lead-Based Solder Joints during Power Cycling
Author
Batut Nathalie
Caldeira Adelphe
+4Â more
Gonthier Laurent
Jacques Sébastien
Leroy René
Schellmanns Ambroise
Publication venue
'Elsevier BV'
Publication date
01/01/2012
Field of study
No full text
International audienc
HAL Université de Tours