Near-Zero-Power Temperature Sensing via Tunneling Currents Through Complementary Metal-Oxide-Semiconductor Transistors.

Temperature sensors are routinely found in devices used to monitor the environment, the human body, industrial equipment, and beyond. In many such applications, the energy available from batteries or the power available from energy harvesters is extremely limited due to limited available volume, and thus the power consumption of sensing should be minimized in order to maximize operational lifetime. Here we present a new method to transduce and digitize temperature at very low power levels. Specifically, two pA current references are generated via small tunneling-current metal-oxide-semiconductor field effect transistors (MOSFETs) that are independent and proportional to temperature, respectively, which are then used to charge digitally-controllable banks of metal-insulator-metal (MIM) capacitors that, via a discrete-time feedback loop that equalizes charging time, digitize temperature directly. The proposed temperature sensor was integrated into a silicon microchip and occupied 0.15 mm2 of area. Four tested microchips were measured to consume only 113 pW with a resolution of 0.21 °C and an inaccuracy of ±1.65 °C, which represents a 628× reduction in power compared to prior-art without a significant reduction in performance

Voyager electronic parts radiation program, volume 1

The Voyager spacecraft is subject to radiation from external natural space, from radioisotope thermoelectric generators and heater units, and from the internal environment where penetrating electrons generate surface ionization effects in semiconductor devices. Methods for radiation hardening and tests for radiation sensitivity are described. Results of characterization testing and sample screening of over 200 semiconductor devices in a radiation environment are summarized

A software controlled voltage tuning system using multi-purpose ring oscillators

This paper presents a novel software driven voltage tuning method that utilises multi-purpose Ring Oscillators (ROs) to provide process variation and environment sensitive energy reductions. The proposed technique enables voltage tuning based on the observed frequency of the ROs, taken as a representation of the device speed and used to estimate a safe minimum operating voltage at a given core frequency. A conservative linear relationship between RO frequency and silicon speed is used to approximate the critical path of the processor. Using a multi-purpose RO not specifically implemented for critical path characterisation is a unique approach to voltage tuning. The parameters governing the relationship between RO and silicon speed are obtained through the testing of a sample of processors from different wafer regions. These parameters can then be used on all devices of that model. The tuning method and software control framework is demonstrated on a sample of XMOS XS1-U8A-64 embedded microprocessors, yielding a dynamic power saving of up to 25% with no performance reduction and no negative impact on the real-time constraints of the embedded software running on the processor

The Rolf of Test Chips in Coordinating Logic and Circuit Design and Layout Aids for VLSI

This paper emphasizes the need for multipurpose test chips and comprehensive procedures for use in supplying accurate input data to both logic and circuit simulators and chip layout aids. It is shown that the location of test structures within test chips is critical in obtaining representative data, because geometrical distortions introduced during the photomasking process can lead to significant intrachip parameter variations. In order to transfer test chip designs quickly, accurately, and economically, a commonly accepted portable chip layout notation and commonly accepted parametric tester language are needed. In order to measure test chips more accurately and more rapidly, parametric testers with improved architecture need to be developed in conjunction with innovative test structures with on-chip signal conditioning

March CRF: an Efficient Test for Complex Read Faults in SRAM Memories

In this paper we study Complex Read Faults in SRAMs, a combination of various malfunctions that affect the read operation in nanoscale memories. All the memory elements involved in the read operation are studied, underlining the causes of the realistic faults concerning this operation. The requirements to cover these fault models are given. We show that the different causes of read failure are independent and may coexist in nanoscale SRAMs, summing their effects and provoking Complex Read Faults, CRFs. We show that the test methodology to cover this new read faults consists in test patterns that match the requirements to cover all the different simple read fault models. We propose a low complexity (?2N) test, March CRF, that covers effectively all the realistic Complex Read Fault

Product assurance technology for custom LSI/VLSI electronics

The technology for obtaining custom integrated circuits from CMOS-bulk silicon foundries using a universal set of layout rules is presented. The technical efforts were guided by the requirement to develop a 3 micron CMOS test chip for the Combined Release and Radiation Effects Satellite (CRRES). This chip contains both analog and digital circuits. The development employed all the elements required to obtain custom circuits from silicon foundries, including circuit design, foundry interfacing, circuit test, and circuit qualification

A review of advances in pixel detectors for experiments with high rate and radiation

The Large Hadron Collider (LHC) experiments ATLAS and CMS have established hybrid pixel detectors as the instrument of choice for particle tracking and vertexing in high rate and radiation environments, as they operate close to the LHC interaction points. With the High Luminosity-LHC upgrade now in sight, for which the tracking detectors will be completely replaced, new generations of pixel detectors are being devised. They have to address enormous challenges in terms of data throughput and radiation levels, ionizing and non-ionizing, that harm the sensing and readout parts of pixel detectors alike. Advances in microelectronics and microprocessing technologies now enable large scale detector designs with unprecedented performance in measurement precision (space and time), radiation hard sensors and readout chips, hybridization techniques, lightweight supports, and fully monolithic approaches to meet these challenges. This paper reviews the world-wide effort on these developments.Comment: 84 pages with 46 figures. Review article.For submission to Rep. Prog. Phy

Layout level design for testability strategy applied to a CMOS cell library

The layout level design for testability (LLDFT) rules used here allow to avoid some hard to detect faults or even undetectable faults on a cell library by modifying the cell layout without changing their behavior and achieving a good level of reliability. These rules avoid some open faults or reduce their appearance probability. The main purpose has been to apply that set of LLDFT rules on the cells of the library designed at the Centre Nacional de Microelectronica (CNM) in order to obtain a highly testable cell library. The authors summarize the main results (area overhead and performance degradation) of the application of the LLDFT rules on the cell

The Characterization of a CMOS Radiation Hardened-by-Design Circuit Technique

This thesis presents the analysis, implementation and testing of a circuit-level radiation hardened-by-design (RHBD) technique first presented in [1]. Radiation effects heavily influence the cost and design of electronics bound for radiation-rich environments such as in nuclear reactors or space. The circuit-level RHBD technique is presented as a cost-effective way to mitigate total-ionizing dose (TID) radiation in digital complementary metal-oxide-semiconductor (CMOS) transistor circuits. These claims are analyzed and experimentally tested. Devices from a relatively old and a newer semiconductor fabrication process are tested to investigate the impact of device scaling on the RHBD technique’s effectiveness. A rad-tolerant frequency synthesizer that implements this technique is discussed. Challenges in the project included implementing efficient testing procedures at the radiation test facilities. Testing time was limited and in-situ­ test methodologies utilizing LabView programs were used effectively