A NEW LOW POWER TECHNOLOGY FOR POWER REDUCTION IN SRAM’S USING COLUMN DECOUPLING COMBINED WITH VIRTUAL GROUNDING

In this paper we are going to modify the column decoupled SRAM for the purpose of more reduced leakages than the existing type of designs as well as the new design which is combined of virtual grounding with column decoupling logic is compared with the existing technologies & the nanometer technology is also improved for the purpose of much improved reduction of area & power factors the simulations were done using microwind& DSCH result

myCACTI: A new cache design tool for pipelined nanometer caches

TThe presence of caches in microprocessors has always been one of the most important techniques in bridging the memory wall, or the speed gap between the microprocessor and main memory. This importance is continuously increasing especially as we enter the regime of nanometer process technologies (i.e. 90nm and below), as industry has favored investing a larger and larger fraction of a chip.s transistor budget to improving the on-chip cache. This is the case in practice, as it has proven to be an efficient way to utilize the increasing number of transistors available with each succeeding technology. Consequently, it becomes even more important to have cache design tools that give accurate representations of designs that exist in actual microprocessors. The prevalent cache design tools that are the most widely used in academe are CACTI [Wilton1996] and eCACTI [Mamidipaka2004], and these have proven to be very useful tools not just for cache designers, but also for computer architects. This dissertation will show that both CACTI and eCACTI still contain major limitations and even flaws in their design, making them unsuitable for use in very-deep submicron and nanometer caches, especially pipelined designs. These limitations and flaws will be discussed in detail. This dissertation then introduces a new tool, called myCACTI, that addresses all these limitations and, in addition, introduces major enhancements to the simulation framework. This dissertation then demonstrates the use of myCACTI in the cache design process. Detailed design space explorations are done on multiple cache configurations to produce pareto optimal curves of the caches to show optimal implementations. Detailed studies are also performed to characterize the delay and power dissipation of different cache configurations and implementations. Finally, future directions to the development of myCACTI are identified to show possible ways that the tool can be improved in such a way as to allow even more different kinds of studies to be performed

A METHODOLOGY OF SPICE SIMULATION TO EXTRACT SRAM SETUP AND HOLD TIMING PARAMETERS BASED ON DFF DELAY DEGRADATION

SRAM is a significant component in high speed computer design, which serves mainly as high speed storage elements like register files in microprocessors, or the interface like multiple-level caches between high speed processing elements and low speed peripherals. One method to design the SRAM is to use commercial memory compiler. Such compiler can generate different density/speed SRAM designs with single/dual/multiple ports to fulfill design purpose. There are discrepancy of the SRAM timing parameters between extracted layout netlist SPICE simulation vs. equation-based Liberty file (.lib) by a commercial memory compiler. This compiler takes spec values as its input and uses them as the starting points to generate the timing tables/matrices in the .lib. Originally large spec values are given to guarantee design correctness. While such spec values are usually too pessimistic when comparing with the results from extracted layout SPICE simulation, which serves as the “golden” rule. Besides, there is no margin information built-in such .lib generated by this compiler. A new methodology is proposed to get accurate spec values for the input of this compiler to generate more realistic matrices in .lib, which will benefit during the integration of the SRAM IP and timing analysis

A Micro Power Hardware Fabric for Embedded Computing

Field Programmable Gate Arrays (FPGAs) mitigate many of the problemsencountered with the development of ASICs by offering flexibility, faster time-to-market, and amortized NRE costs, among other benefits. While FPGAs are increasingly being used for complex computational applications such as signal and image processing, networking, and cryptology, they are far from ideal for these tasks due to relatively high power consumption and silicon usage overheads compared to direct ASIC implementation. A reconfigurable device that exhibits ASIC-like power characteristics and FPGA-like costs and tool support is desirable to fill this void. In this research, a parameterized, reconfigurable fabric model named as domain specific fabric (DSF) is developed that exhibits ASIC-like power characteristics for Digital Signal Processing (DSP) style applications. Using this model, the impact of varying different design parameters on power and performance has been studied. Different optimization techniques like local search and simulated annealing are used to determine the appropriate interconnect for a specific set of applications. A design space exploration tool has been developed to automate and generate a tailored architectural instance of the fabric.The fabric has been synthesized on 160 nm cell-based ASIC fabrication process from OKI and 130 nm from IBM. A detailed power-performance analysis has been completed using signal and image processing benchmarks from the MediaBench benchmark suite and elsewhere with comparisons to other hardware and software implementations. The optimized fabric implemented using the 130 nm process yields energy within 3X of a direct ASIC implementation, 330X better than a Virtex-II Pro FPGA and 2016X better than an Intel XScale processor

Reducing leakage in a high-performance deep-submicron instruction cache

Deep-submicron CMOS designs maintain high transistor switching speeds by scaling down the supply voltage and proportionately reducing the transistor threshold voltage. Lowering the threshold voltage increases leakage energy dissipation due to subthreshold leakage current even when the transistor is not switching. Estimates suggest a five-fold increase in leakage energy in every future generation. In modern microarchitectures, much of the leakage energy is dissipated in large on-chip cache memory structures with high transistor densities. While cache utilization varies both within and across applications, modern cache designs are fixed in size resulting in transistor leakage inefficiencies. This paper explores an integrated architectural and circuit-level approach to reducing leakage energy in instruction caches (i-caches). At the architecture level, we propose the Dynamically ResIzable i-cache (DRI i-cache), a novel i-cache design that dynamically resizes and adapts to an application's required size. At the circuit-level, we use gated-Vdd, a novel mechanism that effectively turns off the supply voltage to, and eliminates leakage in, the SRAM cells in a DRI i-cache's unused sections. Architectural and circuit-level simulation results indicate that a DRI i-cache successfully and robustly exploits the cache size variability both within and across applications. Compared to a conventional i-cache using an aggressively-scaled threshold voltage a 64 K DRI i-cache reduces on average both the leakage energy-delay product and cache size by 62%, with less than 4% impact on execution time. Our results also indicate that a wide NMOS dual-Vt gated-Vdd transistor with a charge pump offers the best gating implementation and virtually eliminates leakage energy with minimal increase in an SRAM cell read time area as compared to an i-cache with an aggressively-scaled threshold voltage

An integrated circuit/architecture approach to reducing leakage in deep-submicron high-performance I-caches

Deep-submicron CMOS designs maintain high transistor switching speeds by scaling down the supply voltage and proportionately, reducing the transistor threshold voltage. Lowering the threshold voltage increases leakage energy dissipation due to subthreshold leakage current even when the transistor is for switching. Estimates suggest a five- fold increase in leakage energy in every future generation. In modern microarchirectures, much of the leakage energy is dissipated in large on-chip cache memory structures with high transistor densities. While cache utilization varies both within and across applications, modern cache designs are fixed in size resulting in transistor leakage inefficiencies. This paper explores an integrated architectural and circuit level approach to reducing leakage energy in instruction caches (i-caches). At the architectural level, we propose the Dynamically Resizable i- cache (DRI i-cache), a novel i-cache design that dynamically resizes and adapts to an application's required size. At the circuit-level, we use gated-Vdd, a mechanism that effectively turns of the supply voltage to, and eliminates leakage in, the SRAM cells in a DRI i-cache's unused sections. Architectural and circuit-level simulation results indicate that a DRI i-cache successfully and robust exploits the cache size variability both within and across applications. Compared to a conventional i-cache using an aggressively-scaled threshold voltage a 64K DRI i-cache reduces on average both the leakage energy-delay product and cache size 62%, with less than 4% impact on execution tim

ENERGY-EFFICIENT FEATURE EXTRACTION ENGINE AND SECURE CHIP IDENTIFICATION FOR UBIQUITOUS SURVEILLANCE

Ph.DDOCTOR OF PHILOSOPH

A Study of Nanometer Semiconductor Scaling Effects on Microelectronics Reliability

The desire to assess the reliability of emerging scaled microelectronics technologies through faster reliability trials and more accurate acceleration models is the precursor for further research and experimentation in this relevant field. The effect of semiconductor scaling on microelectronics product reliability is an important aspect to the high reliability application user. From the perspective of a customer or user, who in many cases must deal with very limited, if any, manufacturer's reliability data to assess the product for a highly-reliable application, product-level testing is critical in the characterization and reliability assessment of advanced nanometer semiconductor scaling effects on microelectronics reliability. This dissertation provides a methodology on how to accomplish this and provides techniques for deriving the expected product-level reliability on commercial memory products. Competing mechanism theory and the multiple failure mechanism model are applied to two separate experiments; scaled SRAM and SDRAM products. Accelerated stress testing at multiple conditions is applied at the product level of several scaled memory products to assess the performance degradation and product reliability. Acceleration models are derived for each case. For several scaled SDRAM products, retention time degradation is studied and two distinct soft error populations are observed with each technology generation: early breakdown, characterized by randomly distributed weak bits with Weibull slope Beta=1, and a main population breakdown with an increasing failure rate. Retention time soft error rates are calculated and a multiple failure mechanism acceleration model with parameters is derived for each technology. Defect densities are calculated and reflect a decreasing trend in the percentage of random defective bits for each successive product generation. A normalized soft error failure rate of the memory data retention time in FIT/Gb and FIT/cm2 for several scaled SDRAM generations is presented revealing a power relationship. General models describing the soft error rates across scaled product generations are presented. The analysis methodology may be applied to other scaled microelectronic products and key parameters

Robust low-power digital circuit design in nano-CMOS technologies

Device scaling has resulted in large scale integrated, high performance, low-power, and low cost systems. However the move towards sub-100 nm technology nodes has increased variability in device characteristics due to large process variations. Variability has severe implications on digital circuit design by causing timing uncertainties in combinational circuits, degrading yield and reliability of memory elements, and increasing power density due to slow scaling of supply voltage. Conventional design methods add large pessimistic safety margins to mitigate increased variability, however, they incur large power and performance loss as the combination of worst cases occurs very rarely. In-situ monitoring of timing failures provides an opportunity to dynamically tune safety margins in proportion to on-chip variability that can significantly minimize power and performance losses. We demonstrated by simulations two delay sensor designs to detect timing failures in advance that can be coupled with different compensation techniques such as voltage scaling, body biasing, or frequency scaling to avoid actual timing failures. Our simulation results using 45 nm and 32 nm technology BSIM4 models indicate significant reduction in total power consumption under temperature and statistical variations. Future work involves using dual sensing to avoid useless voltage scaling that incurs a speed loss. SRAM cache is the first victim of increased process variations that requires handcrafted design to meet area, power, and performance requirements. We have proposed novel 6 transistors (6T), 7 transistors (7T), and 8 transistors (8T)-SRAM cells that enable variability tolerant and low-power SRAM cache designs. Increased sense-amplifier offset voltage due to device mismatch arising from high variability increases delay and power consumption of SRAM design. We have proposed two novel design techniques to reduce offset voltage dependent delays providing a high speed low-power SRAM design. Increasing leakage currents in nano-CMOS technologies pose a major challenge to a low-power reliable design. We have investigated novel segmented supply voltage architecture to reduce leakage power of the SRAM caches since they occupy bulk of the total chip area and power. Future work involves developing leakage reduction methods for the combination logic designs including SRAM peripherals