D-Band downconversion mixer design in CMOS-SOI

Abstract. The current surge in research interest around the sub-THz frequency region comes as a no surprise. The potential for greater data rates and available bandwidths are just a couple reasons why research around these frequencies should be prioritized. Many viable receiver structures have been presented for these frequency regions, but they all have one thing in common: They all include a downconversion mixer. The mixer is a crucial piece in the receiver structure, converting the higher frequency radio frequency (RF) signal to a much lower intermediate frequency (IF) signal using multiplication with a local oscillator (LO) signal. The resulting waveform is much easier to handle for signal processing that comes after. The downconversion should be able to provide a fair amount of gain to the converted signal on a wide range of input signals, measured with the 1dB compression point. The noise figure is also a major consideration for RF-devices, but in the case of the mixer, its importance is not as prevalent as it is for the LNA that precedes it, since the noise of the mixer is attenuated by the gain of the previous stages. This master’s thesis work introduces the basic theory around downconversion mixers, followed by the design of a mixer from schematic level circuit design all the way to the physical layout. The physical design is done using 22nm FDSOI technology, provided by GlobalFoundries. The design is made for a direct conversion receiver using Gilbert cell topology, meaning image rejection is reasonable and depends only on the received signal itself, and good noise and feedthrough performance should be expected in simulations. The mixer is to downconvert a 151 GHz signal down to 0–1 GHz, using an LO signal between 150–151 GHz. Two iterations of the mixer are shown in the end results, the first one being based on the schematic design, and the second one with adjustments made for better performance. While driving a high impedance 500 Ohm load, the second iteration was able to reach a conversion gain of -10.0 dB with a 1dB compression point of 6.4 dBm while dissipating 4.7 mW of power. DSB noise figure was simulated to be 17.3 dB and the LO leakage to the IF output at -27.7 dBm.Alaspäin taajuusmuuntavan sekoittimen suunnittelu D-kaistalle käyttäen CMOS-SOI teknologiaa. Tiivistelmä. Nykyinen tutkimuksen keskittyminen millimetriaalto ja THz taajuusalueille ei tule kenellekään yllätyksenä. Suurempien datanopeuksien ja vapaiden taajuuskaistojen potentiaali ovat vain joitain monista hyvistä käytännön syistä, miksi tutkimusta näiden taajuuksien ympärillä priorisoidaan. Monia käytännöllisiä vastaanotinrakenteita on esitetty näille taajuusalueille ja niillä on kaikilla yksi yhteinen tekijä: tajuusmuunnin alemmille taajuuksille. Taajuusmuunnin eli sekoitin on olennainen osa vastaanotinrakenteita, muuntaen korkeamman radiotaajuuden (RF) matalammalle välitaajuudelle (IF) käyttäen taajuuksien sekoittamista paikallisoskillaattorilla (LO). Mikserin ulostulosignaali on signaalinprosessoinnin näkökulmasta paljon käytännöllisempi. Alaspäin taajuusmuuntavan mikserin tulee pystyä vahvistamaan laajaa skaalaa erivahvuisia signaaleja, minkä ylärajaa mittaamme 1 dB kompressiopisteellä. Radiolaitteistossa kohinaluku tulee yleensä myös ottaa huomioon, mutta johtuen mikserin sijainnista vastaanotinketjussa, kohinaluku vaimenee suhteessa sitä edeltävien vahvistuksien verran, eikä siksi ole niin kriittinen. Tämä diplomityö esittelee lukijalle ensiksi alaspäin muuntavan taajuussekoittimen perusteorian, toisena sen teoreettisen piirikaavion suunnittelun sekä sen simuloinnin tuloksia, ja viimeisenä fyysisen layoutin suunnittelun sekä sen simuloinnin tulokset. Fyysisen layoutin suunnittelu ja simulointi tehdään käyttäen GlobalFoundries 22nm FDSOI teknologiaa. Suunnittelu tehdään suoramuunnosvastaanottimelle käyttäen Gilbertin solu topologiaa, eliminoiden peilitaajuuksista aiheutuvat ongelmat, sekä vähentäen kohinan sekä ei-haluttujen signaalien läpivuotojen vaikutusta. Sekoittimen tulee muuntaa 151 GHz signaali n. 0–1 GHz kantataajuudelle käyttäen LO-signaalia taajuusvälillä 150–151 GHz. Lopullisissa tuloksissa vertaillaan kahta eri iteraatiota. Ensimmäisenä versiota, joka luotiin alun perin teoriapohjaisen piirisuunnittelun pohjalta, sekä toista versiota, missä useilla parannuksilla mikserin suorituskykyä saatiin parannettua. Korkeaimpedanssista 500 Ohmin kuormaa ajaessa mikseri ylsi -10.0 dB vahvistukseen, 1 dB kompressiopiste oli 6.4 dB kuluttaen 4.7 mW virtaa käytössä. Kohinaluvuksi simuloitiin 17.3 dB, sekä LO signaalin vuodosta IF lähtöön oli -27.7 dBm

CMOS MESFET Cascode Amplifiers for RFIC Applications

abstract: There is an ever-increasing demand for higher bandwidth and data rate ensuing from exploding number of radio frequency integrated systems and devices. As stated in the Shannon-Hartley theorem, the maximum achievable data rate of a communication channel is linearly proportional to the system bandwidth. This is the main driving force behind pushing wireless systems towards millimeter-wave frequency range, where larger bandwidth is available at a higher carrier frequency. Observing the Moor’s law, highly scaled complementary metal–oxide–semiconductor (CMOS) technologies provide fast transistors with a high unity power gain frequency which enables operating at millimeter-wave frequency range. CMOS is the compelling choice for digital and signal processing modules which concurrently offers high computation speed, low power consumption, and mass integration at a high manufacturing yield. One of the main shortcomings of the sub-micron CMOS technologies is the low breakdown voltage of the transistors that limits the dynamic range of the radio frequency (RF) power blocks, especially with the power amplifiers. Low voltage swing restricts the achievable output power which translates into low signal to noise ratio and degraded linearity. Extensive research has been done on proposing new design and IC fabrication techniques with the goal of generating higher output power in CMOS technology. The prominent drawbacks of these solutions are an increased die area, higher cost per design, and lower overall efficiency due to lossy passive components. In this dissertation, CMOS compatible metal–semiconductor field-effect transistor (MESFETs) are utilized to put forward a new solution to enhance the power amplifier’s breakdown voltage, gain and maximum output power. Requiring no change to the conventional CMOS process flow, this low cost approach allows direct incorporation of high voltage power MESFETs into silicon. High voltage MESFETs were employed in a cascode structure to push the amplifier’s cutoff frequency and unity power gain frequency to the 5G and K-band frequency range. This dissertation begins with CMOS compatible MESFET modeling and fabrication steps, and culminates in the discussion of amplifier design and optimization methodology, parasitic de-embedding steps, simulation and measurement results, and high resistivity RF substrate characterization.Dissertation/ThesisDoctoral Dissertation Electrical Engineering 201

Wideband CMOS Data Converters for Linear and Efficient mmWave Transmitters

With continuously increasing demands for wireless connectivity, higher\ua0carrier frequencies and wider bandwidths are explored. To overcome a limited transmit power at these higher carrier frequencies, multiple\ua0input multiple output (MIMO) systems, with a large number of transmitters\ua0and antennas, are used to direct the transmitted power towards\ua0the user. With a large transmitter count, each individual transmitter\ua0needs to be small and allow for tight integration with digital circuits. In\ua0addition, modern communication standards require linear transmitters,\ua0making linearity an important factor in the transmitter design.In this thesis, radio frequency digital-to-analog converter (RF-DAC)-based transmitters are explored. They shift the transition from digital\ua0to analog closer to the antennas, performing both digital-to-analog\ua0conversion and up-conversion in a single block. To reduce the need for\ua0computationally costly digital predistortion (DPD), a linear and wellbehaved\ua0RF-DAC transfer characteristic is desirable. The combination\ua0of non-overlapping local oscillator (LO) signals and an expanding segmented\ua0non-linear RF-DAC scaling is evaluated as a way to linearize\ua0the transmitter. This linearization concept has been studied both for\ua0the linearization of the RF-DAC itself and for the joint linearization of\ua0the cascaded RF-DAC-based modulator and power amplifier (PA) combination.\ua0To adapt the linearization, observation receivers are needed.\ua0In these, high-speed analog-to-digital converters (ADCs) have a central\ua0role. A high-speed ADC has been designed and evaluated to understand\ua0how concepts used to increase the sample rate affect the dynamic performance

CMOS Data Converters for Closed-Loop mmWave Transmitters

With the increased amount of data consumed in mobile communication systems, new solutions for the infrastructure are needed. Massive multiple input multiple output (MIMO) is seen as a key enabler for providing this increased capacity. With the use of a large number of transmitters, the cost of each transmitter must be low. Closed-loop transmitters, featuring high-speed data converters is a promising option for achieving this reduced unit cost.In this thesis, both digital-to-analog (D/A) and analog-to-digital (A/D) converters suitable for wideband operation in millimeter wave (mmWave) massive MIMO transmitters are demonstrated. A 2 76 bit radio frequency digital-to-analog converter (RF-DAC)-based in-phase quadrature (IQ) modulator is demonstrated as a compact building block, that to a large extent realizes the transmit path in a closed-loop mmWave transmitter. The evaluation of an successive-approximation register (SAR) analog-to-digital converter (ADC) is also presented in this thesis. Methods for connecting simulated and measured performance has been studied in order to achieve a better understanding about the alternating comparator topology.These contributions show great potential for enabling closed-loop mmWave transmitters for massive MIMO transmitter realizations

Four-element phased-array beamformers and a self-interference canceling full-duplex transciver in 130-nm SiGe for 5G applications at 26 GHz

This thesis is on the design of radio-frequency (RF) integrated front-end circuits for next generation 5G communication systems. The demand for higher data rates and lower latency in 5G networks can only be met using several new technologies including, but not limited to, mm-waves, massive-MIMO, and full-duplex. Use of mm-waves provides more bandwidth that is necessary for high data rates at the cost of increased attenuation in air. Massive-MIMO arrays are required to compensate for this increased path loss by providing beam steering and array gain. Furthermore, full duplex operation is desirable for improved spectrum efficiency and reduced latency. The difficulty of full duplex operation is the self-interference (SI) between transmit (TX) and receive (RX) paths. Conventional methods to suppress this interference utilize either bulky circulators, isolators, couplers or two separate antennas. These methods are not suitable for fully-integrated full-duplex massive-MIMO arrays. This thesis presents circuit and system level solutions to the issues summarized above, in the form of SiGe integrated circuits for 5G applications at 26 GHz. First, a full-duplex RF front-end architecture is proposed that is scalable to massive-MIMO arrays. It is based on blind, RF self-interference cancellation that is applicable to single/shared antenna front-ends. A high resolution RF vector modulator is developed, which is the key building block that empowers the full-duplex frontend architecture by achieving better than state-of-the-art 10-b monotonic phase control. This vector modulator is combined with linear-in-dB variable gain amplifiers and attenuators to realize a precision self-interference cancellation circuitry. Further, adaptive control of this SI canceler is made possible by including an on-chip low-power IQ downconverter. It correlates copies of transmitted and received signals and provides baseband/dc outputs that can be used to adaptively control the SI canceler. The solution comes at the cost of minimal additional circuitry, yet significantly eases linearity requirements of critical receiver blocks at RF/IF such as mixers and ADCs. Second, to complement the proposed full-duplex front-end architecture and to provide a more complete solution, high-performance beamformer ICs with 5-/6- b phase and 3-/4-b amplitude control capabilities are designed. Single-channel, separate transmitter and receiver beamformers are implemented targeting massive- MIMO mode of operation, and their four-channel versions are developed for phasedarray communication systems. Better than state-of-the-art noise performance is obtained in the RX beamformer channel, with a full-channel noise figure of 3.3 d

Radiation Tolerant Electronics, Volume II

Research on radiation tolerant electronics has increased rapidly over the last few years, resulting in many interesting approaches to model radiation effects and design radiation hardened integrated circuits and embedded systems. This research is strongly driven by the growing need for radiation hardened electronics for space applications, high-energy physics experiments such as those on the large hadron collider at CERN, and many terrestrial nuclear applications, including nuclear energy and safety management. With the progressive scaling of integrated circuit technologies and the growing complexity of electronic systems, their ionizing radiation susceptibility has raised many exciting challenges, which are expected to drive research in the coming decade.After the success of the first Special Issue on Radiation Tolerant Electronics, the current Special Issue features thirteen articles highlighting recent breakthroughs in radiation tolerant integrated circuit design, fault tolerance in FPGAs, radiation effects in semiconductor materials and advanced IC technologies and modelling of radiation effects

Electronic Nanodevices

The start of high-volume production of field-effect transistors with a feature size below 100 nm at the end of the 20th century signaled the transition from microelectronics to nanoelectronics. Since then, downscaling in the semiconductor industry has continued until the recent development of sub-10 nm technologies. The new phenomena and issues as well as the technological challenges of the fabrication and manipulation at the nanoscale have spurred an intense theoretical and experimental research activity. New device structures, operating principles, materials, and measurement techniques have emerged, and new approaches to electronic transport and device modeling have become necessary. Examples are the introduction of vertical MOSFETs in addition to the planar ones to enable the multi-gate approach as well as the development of new tunneling, high-electron mobility, and single-electron devices. The search for new materials such as nanowires, nanotubes, and 2D materials for the transistor channel, dielectrics, and interconnects has been part of the process. New electronic devices, often consisting of nanoscale heterojunctions, have been developed for light emission, transmission, and detection in optoelectronic and photonic systems, as well for new chemical, biological, and environmental sensors. This Special Issue focuses on the design, fabrication, modeling, and demonstration of nanodevices for electronic, optoelectronic, and sensing applications

Novel e-band reflection-type phase shifter - theory, design, and fabrication

This dissertation reports on the development of the E-band reflection-type phase shifters (RTPS), for applications in phased array systems. A novel 3-bit phase shifter is proposed consisting of a broadside coupled quadrature coupler and two reflective loads. This design utilizes a differential configuration providing the following benefits: 1. the easy accessibility of the on-chip short-circuit; 2. the reduction of electromagnetic interference; 3. the potential for expanding the 180° designed phase shift range to 360°, with the use of a phase inverter. Based on the fundamentals of microwave and millimetre-wave (mm-wave) circuits, theories and design methodologies of RTPS designs are discussed. Two metal layers realizing the coupler body and two extra metal layers for bridging connections of the differential microstrip lines are utilized in this design. At the reflective loads, radio frequency (RF) microelectromechanical system (MEMS) switch-controlled short-circuited microstrip lines with variable length are employed to achieve reduced loss and a large tuneable range. The phase shifter is fabricated with complex customized fabrication processes on 100 μm thick fused silica substrates. The 3-bit (9 states) differential RTPS was successfully fabricated and measured. Typically, a probe-based set-up with a 4-port vector network analyser (VNA) has to be used to measure a 4-port device; in our case, a new calibration method using differential probes with a 2-port VNA was proposed and validated. With a further characterization, by removing the measurement pads, using the distributed open-short de-embedding techniques, excellent RF performance was achieved for a tuneable phase range of 195.6° at 78 GHz. The measured reflection coefficients are below -18 dB, with an insertion loss error of less than 0.7 dB and a phase error of less than 8.6°, over the range of 70-86 GHz. At 74 GHz, the measured insertion loss varies from 3.9 dB to 4.9 dB, regarding all 9 phase states