Low Power Analog to Digital Converters in Advanced CMOS Technology Nodes

The dissertation presents system and circuit solutions to improve the power efficiency and address high-speed design issues of ADCs in advanced CMOS technologies. For image sensor applications, a high-performance digitizer prototype based on column-parallel single-slope ADC (SS-ADC) topology for readout of a back-illuminated 3D-stacked CMOS image sensor is presented. To address the high power consumption issue in high-speed digital counters, a passing window (PW) based hybrid counter topology is proposed. To address the high column FPN under bright illumination conditions, a double auto-zeroing (AZ) scheme is proposed. The proposed techniques are experimentally verified in a prototype chip designed and fabricated in the TSMC 40 nm low-power CMOS process. The PW technique saves 52.8% of power consumption in the hybrid digital counters. Dark/bright column fixed pattern noise (FPN) of 0.0024%/0.028% is achieved employing the proposed double AZ technique for digital correlated double sampling (CDS). A single-column digitizer consumes total power of 66.8μW and occupies an area of 5.4 µm x 610 µm. For mobile/wireless receiver applications, this dissertation presents a low-power wide-bandwidth multistage noise-shaping (MASH) continuous-time delta-sigma modulator (CT-ΔΣM) employing finite impulse response (FIR) digital-to-analog converters (DACs) and encoder-embedded loop-unrolling (EELU) quantizers. The proposed MASH 1-1-1 topology is a cascade of three single-loop first-order CT-ΔΣM stages, each of which consists of an active-RC integrator, a current-steering DAC, and an EELU quantizer. An FIR filter in the main 1.5-bit DAC improves the modulator’s jitter sensitivity performance. FIR’s effect on the noise transfer function (NTF) of the modulator is compensated in the digital domain thanks to the MASH topology. Instead of employing a conventional analog direct feedback path, a 1.5-bit EELU quantizer based on multiplexing comparator outputs is proposed; this approach is suitable for highspeed operation together with power and area benefits. Fabricated in a 40-nm low-power CMOS technology, the modulator’s prototype achieves a 67.3 dB of signal-to-noise and distortion ratio (SNDR), 68 dB of signal-to-noise ratio (SNR), and 68.2 dB of dynamic range (DR) within 50.5 MHz of bandwidth (BW), while consuming 19 mW of total power (P). The proposed modulator features 161.5 dB of figure-of-merit (FOM), defined as FOM = SNDR + 10 log10 (BW/P)

A mixed-signal ASIC for time and charge measurements with GEM detectors

L'abstract è presente nell'allegato / the abstract is in the attachmen

Built-in self test of RF subsystems

textWith the rapid development of wireless and wireline communications, a variety of new standards and applications are emerging in the marketplace. In order to achieve higher levels of integration, RF circuits are frequently embedded into System on Chip (SoC) or System in Package (SiP) products. These developments, however, lead to new challenges in manufacturing test time and cost. Use of traditional RF test techniques requires expensive high frequency test instruments and long test time, which makes test one of the bottlenecks for reducing IC costs. This research is in the area of built-in self test technique for RF subsystems. In the test approach followed in this research, on-chip detectors are used to calculate circuits specifications, and data converters are used to collect the data for analysis by an on-chip processor. A novel on-chip amplitude detector has been designed and optimized for RF circuit specification test. By using on-chip detectors, both the system performance and specifications of the individual components can be accurately measured. On-chip measurement results need to be collected by Analog to Digital Converters (ADCs). A novel time domain, low power ADC has been designed for this purpose. The ADC architecture is based on a linear voltage controlled delay line. Using this structure results in a linear transfer function for the input dependent delay. The time delay difference is then compared to a reference to generate a digital code. Two prototype test chips were fabricated in commercial CMOS processes. One is for the RF transceiver front end with on-chip detectors; the other is for the test ADC. The 940MHz RF transceiver front-end was implemented with on-chip detectors in a 0.18 [micrometer] CMOS technology. The chips were mounted onto RF Printed Circuit Boards (PCBs), with tunable power supply and biasing knobs. The detector was characterized with measurements which show that the detector keeps linear performance over a wide input amplitude range of 500mV. Preliminary simulation and measurements show accurate transceiver performance prediction under process variations. A 300MS/s 6 bit ADC was designed using the novel time domain architecture in a 0.13 [micrometer] standard digital CMOS process. The simulation results show 36.6dB Signal to Noise Ratio (SNR), 34.1dB Signal to Noise and Distortion Ratio (SNDR) for 99MHz input, Differential Non-Linearity (DNL)<0.2 Least Significant Bit (LSB), and Integral Non-Linearity (INL)<0.5LSB. Overall chip power is 2.7mW with a 1.2V power supply. The built-in detector RF test was extended to a full transceiver RF front end test with a loop-back setup, so that measurements can be made to verify the benefits of the technique. The application of the approach to testing gain, linearity and noise figure was investigated. New detector types are also evaluated. In addition, the low-power delay-line based ADC was characterized and improved to facilitate gathering of data from the detector. Several improved ADC structures at the system level are also analyzed. The built-in detector based RF test technique enables the cost-efficient test for SoCs.Electrical and Computer Engineerin