3 research outputs found
Reliability-aware memory design using advanced reconfiguration mechanisms
Fast and Complex Data Memory systems has become a necessity in modern computational units in today's integrated circuits. These memory systems are integrated in form of large embedded memory for data manipulation and storage. This goal has been achieved by the aggressive scaling of transistor dimensions to few nanometer (nm) sizes, though; such a progress comes with a drawback, making it critical to obtain high yields of the chips. Process variability, due to manufacturing imperfections, along with temporal aging, mainly induced by higher electric fields and temperature, are two of the more significant threats that can no longer be ignored in nano-scale embedded memory circuits, and can have high impact on their robustness.
Static Random Access Memory (SRAM) is one of the most used embedded memories; generally implemented with the smallest device dimensions and therefore its robustness can be highly important in nanometer domain design paradigm. Their reliable operation needs to be considered and achieved both in cell and also in architectural SRAM array design.
Recently, and with the approach to near/below 10nm design generations, novel non-FET devices such as Memristors are attracting high attention as a possible candidate to replace the conventional memory technologies. In spite of their favorable characteristics such as being low power and highly scalable, they also suffer with reliability challenges, such as process variability and endurance degradation, which needs to be mitigated at device and architectural level.
This thesis work tackles such problem of reliability concerns in memories by utilizing advanced reconfiguration techniques. In both SRAM arrays and Memristive crossbar memories novel reconfiguration strategies are considered and analyzed, which can extend the memory lifetime. These techniques include monitoring circuits to check the reliability status of the memory units, and architectural implementations in order to reconfigure the memory system to a more reliable configuration before a fail happens.Actualmente, el diseño de sistemas de memoria en circuitos integrados busca continuamente que sean más rápidos y complejos, lo cual se ha vuelto de gran necesidad para las unidades de computación modernas. Estos sistemas de memoria están integrados en forma de memoria embebida para una mejor manipulación de los datos y de su almacenamiento. Dicho objetivo ha sido conseguido gracias al agresivo escalado de las dimensiones del transistor, el cual está llegando a las dimensiones nanométricas. Ahora bien, tal progreso ha conllevado el inconveniente de una menor fiabilidad, dado que ha sido altamente difÃcil obtener elevados rendimientos de los chips. La variabilidad de proceso - debido a las imperfecciones de fabricación - junto con la degradación de los dispositivos - principalmente inducido por el elevado campo eléctrico y altas temperaturas - son dos de las más relevantes amenazas que no pueden ni deben ser ignoradas por más tiempo en los circuitos embebidos de memoria, echo que puede tener un elevado impacto en su robusteza final. Static Random Access Memory (SRAM) es una de las celdas de memoria más utilizadas en la actualidad. Generalmente, estas celdas son implementadas con las menores dimensiones de dispositivos, lo que conlleva que el estudio de su robusteza es de gran relevancia en el actual paradigma de diseño en el rango nanométrico. La fiabilidad de sus operaciones necesita ser considerada y conseguida tanto a nivel de celda de memoria como en el diseño de arquitecturas complejas basadas en celdas de memoria SRAM. Actualmente, con el diseño de sistemas basados en dispositivos de 10nm, dispositivos nuevos no-FET tales como los memristores están atrayendo una elevada atención como posibles candidatos para reemplazar las actuales tecnologÃas de memorias convencionales. A pesar de sus caracterÃsticas favorables, tales como el bajo consumo como la alta escabilidad, ellos también padecen de relevantes retos de fiabilidad, como son la variabilidad de proceso y la degradación de la resistencia, la cual necesita ser mitigada tanto a nivel de dispositivo como a nivel arquitectural. Con todo esto, esta tesis doctoral afronta tales problemas de fiabilidad en memorias mediante la utilización de técnicas de reconfiguración avanzada. La consideración de nuevas estrategias de reconfiguración han resultado ser validas tanto para las memorias basadas en celdas SRAM como en `memristive crossbar¿, donde se ha observado una mejora significativa del tiempo de vida en ambos casos. Estas técnicas incluyen circuitos de monitorización para comprobar la fiabilidad de las unidades de memoria, y la implementación arquitectural con el objetivo de reconfigurar los sistemas de memoria hacia una configuración mucho más fiables antes de que el fallo suced
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On thermal sensor calibration and software techniques for many-core thermal management
The high power density of a many-core processor results in increased temperature which negatively impacts system reliability and performance. Dynamic thermal management applies thermal-aware techniques at run time to avoid overheating using temperature information collected from on-chip thermal sensors. Temperature sensing and thermal control schemes are two critical technologies for successfully maintaining thermal safety. In this dissertation, on-line thermal sensor calibration schemes are developed to provide accurate temperature information.
Software-based dynamic thermal management techniques are proposed using calibrated thermal sensors. Due to process variation and silicon aging, on-chip thermal sensors require periodic calibration before use in DTM. However, the calibration cost for thermal sensors can be prohibitively high as the number of on-chip sensors increases. Linear models which are suitable for on-line calculation are employed to estimate temperatures at multiple sensor locations using performance counters. The estimated temperature and the actual sensor thermal profile show a very high similarity with correlation coefficient ~0.9 for SPLASH2 and SPEC2000 benchmarks.
A calibration approach is proposed to combine potentially inaccurate temperature values obtained from two sources: thermal sensor readings and temperature estimations. A data fusion strategy based on Bayesian inference, which combines information from these two sources, is demonstrated. The result shows the strategy can effectively recalibrate sensor readings in response to inaccuracies caused by process variation and environmental noise. The average absolute error of the corrected sensor temperature readings is
A dynamic task allocation strategy is proposed to address localized overheating in many-core systems. Our approach employs reinforcement learning, a dynamic machine learning algorithm that performs task allocation based on current temperatures and a prediction regarding which assignment will minimize the peak temperature. Our results show that the proposed technique is fast (scheduling performed in \u3c1 \u3ems) and can efficiently reduce peak temperature by up to 8 degree C in a 49-core processor (6% on average) versus a leading competing task allocation approach for a series of SPLASH-2 benchmarks. Reinforcement learning has also been applied to 3D integrated circuits to allocate tasks with thermal awareness