Investigation of Cu‑Cu bonding for 2.5D and 3D system integration using self‑assembled monolayer as oxidation inhibitor

Das Cu-Cu-Bonden ist eine vielversprechende lötfreie Fine-Pitch-Verbindungstechnologie für die 2,5D- und 3D-Systemintegration. Diese Bondtechnologie wurde in den letzten Jahren intensiv untersucht und wird derzeit für miniaturisierte mikroelektronische Produkte eingesetzt. Allerdings, stellt das Cu‑Cu-Bonden zum einen sehr hohe Anforderungen an die Oberflächenplanarität und -reinheit, und zum anderen sollten die Bondpartner frei von Oxiden sein. Oxidiertes Cu erfordert erhöhte Bondparameter, um die Oxidschicht zu durchbrechen und zuverlässige Cu-Cu-Verbindungen zu erzielen. Diese Bondbedingungen sind für viele sensible Bauelemente nicht geeignet. Aus diesem Grund sollten alternative Technologien mit einer einfachen Technik zum Schutz von Cu vor Oxidation gefunden werden. In dieser Arbeit werden selbstorganisierte Monolagen (SAMs) für den Cu-Oxidationsschutz und die Verbesserung der Cu-Cu-Thermokompression- (TC) und Ultraschall- (US) Flip-Chip-Bondtechnologien untersucht. Die Experimente werden an Si-Chips mit galvanisch aufgebrachten Cu-Microbumps und Cu-Schichten durchgeführt. Die Arbeit beinhaltet die umfassende Charakterisierung der SAM für den Cu-Schutz, die Bewertung der technologischen Parameter für das TC- und US-Flip-Chip-Bonden sowie die Charakterisierung der Cu-Cu-Bondqualität (Scherfestigkeitstests, Bruchflächen- und Mikrostrukturanalysen). Eine Lagerung bei tiefen Temperaturen (bei ‑18 °C und ‑40 °C) bestätigte die langanhaltende Schutzwirkung der kurzkettigen SAMs für das galvanisch abgeschiedene Cu ohne chemisch-mechanische Politur. Der Einfluss der Tieftemperaturlagerung an Luft und der thermischen SAM-Desorption in einer Inertgasatmosphäre auf die TC-Verbindungsqualität wird im Detail analysiert. Die Idee, mit Hilfe der US-Leistung SAM mechanisch zu entfernen und gleichzeitig das US-Flip-Chip-Bonden zu starten, wurde in der Literatur bisher nicht systematisch untersucht. Die Methode ermöglicht kurze Bondzeiten, niedrige Bondtemperaturen und das Bonden an Umgebungsluft. Sowohl beim TC- als auch beim US-Flip-Chip-Bonden zeigt es sich, dass die Scherfestigkeit bei den Proben mit SAM-Passivierung um ca. 30 % höher ist als bei unbeschichteten Proben. Das Vorhandensein von Si- und Ti-Bruchflächen nach den Scherfestigkeitstests ist für die Proben mit der SAM-Passivierung typisch, was auf eine höhere Festigkeit solcher Verbindungen im Vergleich zu ungeschützten Proben schließen lässt. Die Transmissionselektronenmikroskopie (TEM) zeigt keine SAM-Spuren im zentralen Bereich der Cu-Cu-Grenzfläche nach dem US-Flip-Chip-Bonden. Die Ergebnisse dieser Arbeit zeigen die Verbesserung der Bondqualität durch den Einsatz von SAM zum Schutz des Cu vor Oxidation im Vergleich zum üblicherweise angewandten Cu-Vorätzen. Das gefundene technologische Prozessfenster für das US-Flip-Chip-Bonden an Luft bietet eine hohe Bondqualität bei 90 °C und 150 °C, bei 180 MPa, bei einer Bonddauer von 1 s an. Die in dieser Arbeit gewonnenen Erkenntnisse sind ein wichtiger Beitrag zum Verständnis des SAM-Einflusses auf Chips mit galvanischen Cu-Microbumps, bzw. Cu-Schichten, und zur weiteren Anwendung der Cu-Cu-Fine-Pitch-Bondtechnologie in der Mikroelektronik.Cu-Cu bonding is one of the most promising fine-pitch interconnect technologies with solder elimination for 2.5D and 3D system integration. This bonding technology has been intensively investigated in the last years and is currently in application for miniaturized microelectronics products. However, Cu-Cu bonding has very high demands on the sur-face planarity and purity, and the bonding partners should be oxide-free. Oxidized Cu requires elevated bonding parameters in order to break through the oxide layer and achieve reliable Cu-Cu interconnects. Those bonding conditions are undesirable for many devices (e.g. due to the temperature/pressure sensitivity). Therefore, alternative technologies with a simple technique for Cu protection from oxidation are required. Self-assembled monolayers (SAMs) are proposed for the Cu protection and the improvement of the Cu-Cu thermocompression (TC) and ultrasonic (US) flip-chip bonding technologies in this thesis. The experiments were carried out on Si dies with electroplated Cu microbumps and Cu layers. The thesis comprises the comprehensive characterization of the SAM for Cu protection, evaluation of technological parameters for TC and US flip-chip bonding as well as characterization of the Cu-Cu bonding quality (shear strength tests, fracture surface and microstructure analyses). The storage at low temperatures (at ‑18 °C and ‑40 °C) confirmed the prolonged protective effect of the short-chain SAMs for the electroplated Cu without chemical-mechanical polishing. The influence of the low-temperature storage in air and the thermal SAM desorption in an inert gas atmosphere on the TC bonding quality was analyzed in detail. The approach of using US power to mechanically remove SAM and simultaneously start the US flip-chip bonding has not been systematically investigated before. The method provides the benefit of short bonding time, low bonding temperature and bonding in ambient air. Both the TC and US flip-chip bonding results featured the shear strength that is approximately 30 % higher for the samples with SAM passivation in comparison to the uncoated samples. The presence of Si and Ti fracture surfaces after the shear strength tests is typical for the samples with the SAM passivation, which suggests a higher strength of such interconnects in comparison to the uncoated samples. The transmission electron microscopy (TEM) indicated no SAM traces at the central region of the Cu-Cu bonding interface after the US flip-chip bonding. The results of this thesis show the improvement of the bonding quality caused by the application of SAM for Cu protection from oxidation in comparison to the commonly applied Cu pre-treatments. The found technological process window for the US flip-chip bonding in air offers high bonding quality at 90 °C and 150 °C, at 180 MPa, for the bonding duration of 1 s. The knowledge gained in this thesis is an important contribution to the understanding of the SAM performance on chips with electroplated Cu microbumps/layers and further application of the Cu-Cu fine-pitch bonding technology for microelectronic devices

Through-Life Monitoring of the impact of vibration on the reliability of area array packages using Non- Destructive Testing

In order to keep up with the demands for faster, cheaper and smaller electronics, the packaging industry has evolved tremendously. Area array packages like flip chips and ball grid arrays are therefore widely used in modern day electronics. However, from the reliability standpoint, solder joints in these area array packages are often the weakest link. In case of harsh vibration environments like military and automobile applications, joint failure mainly occurs due to the high stress incurred during extreme environmental conditions that lead to fatigue failures. This thesis aims to study the effects of real time vibration on area array packages (flip chips in particular) using acoustic micro imaging for through life monitoring of the solder joints. Since real time vibration on solder joints have not been studied before, the various steps for successful testing, through life monitoring of the solder joints and data analysis will be investigated and discussed. Based on automobile industry standards, a real time vibration profile was obtained with the help of Delphi experts, who are the industry collaborators of this project. Due to its strong capability to detect discontinuities within materials and interconnections, Acoustic Micro Imaging (AMI) also known as Scanning Acoustic Microscopy (CSAM) has been used to monitor the solder joints. This approach has not previously been used as an effective tool in monitoring solder joints through life performance in vibration testing. The research regime proposed in this thesis was to monitor the health of solder joints through ultrasound images from beginning to failure, and to see how cracks initiate and propagate in them. The effect of the relative position and orientation on the reliability of the solder joints and the flip chips in the PCB was also studied. The data collected was analysed using MATLAB. The results have shown that three types of solder joints- healthy, partially fractured or fractured are formed near the time of complete failure of a flip chip. When about 70- 80% of the flip chips are either partially fractured or fractured a flip chip is expected to fail. The mean pixel intensity and area change in the acoustic image of a partially fractured or fully fractured joint tends to be higher compared to a healthy joint. Crack initiation in a joint occurs at around 35-40% cycling and propagates linearly till 80-85% cycling after which a joint fails. A statistical analysis done on the solder joints showed that the intensity distribution of healthy joints follow a simple Gaussian distribution while that of partially fractured or fractured joint can only be represented by using a mixture of Gaussians. The solder joints near the board edges are the least reliable in a vibration environment. However, solder joints with back to back connections are more reliable than the ones placed in one sided orientation. The most reliable flip chip orientation in a vibration environment is the back to back connection with no offset which was actually found to be the least reliable in the case of thermal cycling. Based on the analysis of the results, a few design guidelines for flip chip layout and orientations in a PCB has also been proposed in this work

Electrodeposition and characterisation of nickel-niobium-based diffusion barrier metallisations for high temperature electronics interconnections

The control of interfacial microstructural stability is of utmost importance to the reliability of liquid solder interconnects in high temperature electronic assemblies. This is primarily due to excessive intermetallic compounds (IMCs) that can form and continuously grow during high temperature operation, which practically renders conventional barrier metallisations inadequate. In this study, electrically conducting, NbOx containing Ni coatings were developed using electrodeposition. Their suitability as a solder diffusion barrier layer was assessed in terms of the electrical conductivity and barrier property. The present work explores a novel electrochemical route to produce Ni-NbOx composite coatings of good uniformity, compactness and purity, from non-aqueous glycol-based electrolytes consisting of NiCl2 and NbCl5 as metal precursors. The effects of cathodic current density and NaBH4 concentrations on the surface morphology, composition and thickness of the coatings were examined. A combined study of Scanning Transmission Electron Microscopy (STEM) and Electrochemical Quartz Crystal Microbalance (EQCM) was conducted to understand the fundamental aspects of this novel electrodeposition process. The composite coatings generally exhibited good electrical conductivity. The reaction behaviour between a liquid 52In-48Sn solder and Ni-NbOx, with Nb contents up to 6 at.%, were studied at 200ºC. The results indicate that, Ni-NbOx with sufficient layer thickness and higher Nb content, offered longer service lifetime. Nb enrichment was generally observed at or close to the reaction front after high temperature storage, which suggests evident effectiveness of the enhanced diffusion barrier characteristics

Correlative Framework of Techniques for the Inspection, Evaluation, and Design of Micro-electronic Devices

Trillions of micro- and nano-electronic devices are manufactured every year. They service countless electronic systems across a diverse range of applications ranging from civilian, military, and medical sectors. Examples of these devices include: packaged and board-mounted semiconductor devices such as ceramic capacitors, CPUs, GPUs, DSPs, etc., biomedical implantable electrochemical devices such as pacemakers, defibrillators, and neural stimulators, electromechanical sensors such as MEMS/NEMS accelerometers and positioning systems and many others. Though a diverse collection of devices, they are unified by their length scale. Particularly, with respect to the ever-present objectives of device miniaturization and performance improvement. Pressures to meet these objectives have left significant room for the development of widely applicable inspection and evaluation techniques to accurately and reliably probe new and failed devices on an ever-shrinking length scale. Presented in this study is a framework of correlative, cross-modality microscopy workflows coupled with novel in-situ experimentation and testing, and computational reverse engineering and modeling methods, aimed at addressing the current and future challenges of evaluating micro- and nano-electronic devices. The current challenges are presented through a unique series of micro- and nano-electronic devices from a wide range of applications with ties to industrial relevance. Solutions were reached for the challenges and through the development of these workflows, they were successfully expanded to areas outside the immediate area of the original project. Limitations on techniques and capabilities were noted to contextualize the applicability of these workflows to other current and future challenges

EFFECT OF ISOTHERMAL AGING ON SAC305 HARMONIC VIBRATION DURABILITY

The effect of isothermal aging on the harmonic vibration durability of Sn3.0Ag0.5Cu solder interconnects is examined. Printed wiring assemblies with daisy-chained leadless chip resistors (LCRs) are aged at 125°C for 0, 100, and 500 hours. These assemblies are instrumented with accelerometers and strain gages to maintain the same harmonic vibration profile in-test, and to characterize PWB behavior. The tested assemblies are excited at their first natural frequencies until LCRs show a resistance increase of 20%. Dynamic finite element models are employed to generate strain transfer functions, which relate board strain levels observed in-test to respective solder strain levels. The transfer functions are based on locally averaged values of strains in critical regions of the solder and in appropriate regions of the PWB. The vibration test data and the solder strains from FEA are used to estimate lower-bound material fatigue curves for SAC305 solder materials, as a function of isothermal pre-aging

Co-Nanomet: Co-ordination of Nanometrology in Europe

Nanometrology is a subfield of metrology, concerned with the science of measurement at the nanoscale level. Today’s global economy depends on reliable measurements and tests, which are trusted and accepted internationally. It must provide the ability to measure in three dimensions with atomic resolution over large areas. For industrial application this must also be achieved at a suitable speed/throughput. Measurements in the nanometre range should be traceable back to internationally accepted units of measurement (e.g. of length, angle, quantity of matter, and force). This requires common, validated measurement methods, calibrated scientific instrumentation as well as qualified reference samples. In some areas, even a common vocabulary needs to be defined. A traceability chain for the required measurements in the nm range has been established in only a few special cases. A common strategy for European nanometrology has been defined, as captured herein, such that future nanometrology development in Europe may build out from our many current strengths. In this way, European nanotechnology will be supported to reach its full and most exciting potential. As a strategic guidance, this document contains a vision for European nanometrology 2020; future goals and research needs, building out from an evaluation of the status of science and technology in 2010. It incorporates concepts for the acceleration of European nanometrology, in support of the effective commercial exploitation of emerging nanotechnologies. The field of nanotechnology covers a breadth of disciplines, each of which has specific and varying metrological needs. To this end, a set of four core technology fields or priority themes (Engineered Nanoparticles, Nanobiotechnology, Thin Films and Structured Surfaces and Modelling & Simulation) are the focus of this review. Each represents an area within which rapid scientific development during the last decade has seen corresponding growth in or towards commercial exploitation routes. This document was compiled under the European Commission Framework Programme 7 project, Co-Nanomet. It has drawn together input from industry, research institutes, (national) metrology institutes, regulatory and standardisation bodies across Europe. Through the common work of the partners and all those interested parties who have contributed, it represents a significant collaborative European effort in this important field. In the next decade, nanotechnology can be expected to approach maturity, as a major enabling technological discipline with widespread application. This document provides a guide to the many bodies across Europe in their activities or responsibilities in the field of nanotechnology and related measurement requirements. It will support the commercial exploitation of nanotechnology, as it transitions through this next exciting decade

From RF-Microsystem Technology to RF-Nanotechnology

The RF microsystem technology is believed to introduce a paradigm switch in the wireless revolution. Although only few companies are to date doing successful business with RF-MEMS, and on a case-by-case basis, important issues need yet to be addressed in order to maximize yield and performance stability and hence, outperform alternative competitive technologies (e.g. ferroelectric, SoS, SOI,…). Namely the behavior instability associated to: 1) internal stresses of the free standing thin layers (metal and/or dielectric) and 2) the mechanical contact degradation, be it ohmic or capacitive, which may occur due to low forces, on small areas, and while handling severe current densities.The investigation and understanding of these complex scenario, has been the core of theoretical and experimental investigations carried out in the framework of the research activity that will be presented here. The reported results encompass activities which go from coupled physics (multiphysics) modeling, to the development of experimental platforms intended to tackles the underlying physics of failure. Several original findings on RF-MEMS reliability in particular with respect to the major failure mechanisms such as dielectric charging, metal contact degradation and thermal induced phenomena have been obtained. The original use of advanced experimental setup (surface scanning microscopy, light interferometer profilometry) has allowed the definition of innovative methodology capable to isolate and separately tackle the different degradation phenomena under arbitrary working conditions. This has finally permitted on the one hand to shed some light on possible optimization (e.g. packaging) conditions, and on the other to explore the limits of microsystem technology down to the nanoscale. At nanoscale indeed many phenomena take place and can be exploited to either enhance conventional functionalities and performances (e.g. miniaturization, speed or frequency) or introduce new ones (e.g. ballistic transport). At nanoscale, moreover, many phenomena exhibit their most interesting properties in the RF spectrum (e.g. micromechanical resonances). Owing to the fact that today’s minimum manufacturable features have sizes comparable with the fundamental technological limits (e.g. surface roughness, metal grain size, …), the next generation of smart systems requires a switching paradigm on how new miniaturized components are conceived and fabricated. In fact endowed by superior electrical and mechanical performances, novel nanostructured materials (e.g. carbon based, as carbon nanotube (CNT) and graphene) may provide an answer to this endeavor. Extensively studied in the DC and in the optical range, the studies engaged in LAAS have been among the first to target microwave and millimiterwave transport properties in carbon-based material paving the way toward RF nanodevices. Preliminary modeling study performed on original test structures have highlighted the possibility to implement novel functionalities such as the coupling between the electromagnetic (RF) and microelectromechanical energy in vibrating CNT (toward the nanoradio) or the high speed detection based on ballistic transport in graphene three-terminal junction (TTJ). At the same time these study have contributed to identify the several challenges still laying ahead such as the development of adequate design and modeling tools (ballistic/diffusive, multiphysics and large scale factor) and practical implementation issues such as the effects of material quality and graphene-metal contact on the electrical transport. These subjects are the focus of presently on-going and future research activities and may represent a cornerstone of future wireless applications from microwave up to the THz range

Special Topics in Information Technology

This open access book presents thirteen outstanding doctoral dissertations in Information Technology from the Department of Electronics, Information and Bioengineering, Politecnico di Milano, Italy. Information Technology has always been highly interdisciplinary, as many aspects have to be considered in IT systems. The doctoral studies program in IT at Politecnico di Milano emphasizes this interdisciplinary nature, which is becoming more and more important in recent technological advances, in collaborative projects, and in the education of young researchers. Accordingly, the focus of advanced research is on pursuing a rigorous approach to specific research topics starting from a broad background in various areas of Information Technology, especially Computer Science and Engineering, Electronics, Systems and Control, and Telecommunications. Each year, more than 50 PhDs graduate from the program. This book gathers the outcomes of the thirteen best theses defended in 2020-21 and selected for the IT PhD Award. Each of the authors provides a chapter summarizing his/her findings, including an introduction, description of methods, main achievements and future work on the topic. Hence, the book provides a cutting-edge overview of the latest research trends in Information Technology at Politecnico di Milano, presented in an easy-to-read format that will also appeal to non-specialists