10 research outputs found
Development of an integrated silicon photonic transceiver for access networks
Debido a la imparable aparición de dispositivos móviles multifunción junto con
aplicaciones que requieren cada vez más un mayor ancho de banda en cualquier momento
y en cualquier lugar, las futuras redes de acceso deberán ser capaces de proporcionar
servicios tanto inalámbricos como cableados. Es por ello que una solución a seguir es el
uso de sistemas de comunicaciones ópticas como medio de transporte de señales
inalámbricas en enlaces de radio sobre fibra. Con ello, se converge a un dominio óptico
reduciendo y aliviando el cuello de botella entre los estándares de acceso inalámbrico y
cableado.
En esta tesis, como parte de los objetivos establecidos en el proyecto europeo HELIOS
en el que está enmarcada, se han investigado y desarrollado los bloques funcionales
básicos necesarios para realizar un transceptor fotónico integrado trabajando en el rango
de longitudes de onda milimétricas, y haciendo uso de los formatos de modulación más
robustos y que mejor se adaptan al ámbito de aplicación considerado.
El trabajo que se presenta en esta tesis se puede dividir básicamente en tres partes. La
primera de ellas ofrece una descripción general de los beneficios del uso de la fotónica en
silicio para el desarrollo de enlaces inalámbricos a velocidades de Gbps, así como el
estado del arte de los transceptores desarrollados por los grupos de investigación más
activos y punteros para satisfacer las necesidades de mercado, cada vez más exigentes.
La segunda parte se centra en el estudio y desarrollo del transmisor integrado de onda
milimétrica. Primero realizamos una breve introducción teórica tanto del funcionamiento
de los dispositivos que forman parte del transmisor, como a los formatos de modulación
existentes, centrando la atención en la modulación por desplazamiento de fase (PSK) que
es la que se va a utilizar en el desarrollo de los dispositivos implicados, y más
concretamente en la modulación (diferencial) de fase en cuadratura ((D)QPSK). También
se presentan los bloques básicos que integran nuestro transmisor y se fijan las
especificaciones que deben cumplir dichos bloques para conseguir una transmisión libre
de errores. El transmisor está compuesto por un filtro/demultiplexor encargado de separar
dos portadoras ópticas separadas una frecuencia de 60 GHz. Una de estas portadoras es
modulada al pasar por un modulador DQPSK basado en una estructura de dos MachZehnders (MZs) anidados, para ser nuevamente combinada con la otra portadora óptica que se ha mantenido intacta. Una vez combinadas, éstas son fotodetectadas para ser
transmitidas inalámbricamente.
En la tercera parte de esta tesis, se investiga el uso de un esquema de diversidad en
polarización junto a un receptor DQPSK integrado para la demodulación de la señal
recibida. El esquema de diversidad en polarización está formado básicamente por dos
bloques: un separador de polarización con el objetivo de separar la luz a la entrada del
chip en sus dos componentes ortogonales; y un rotador de polarización.
En lo que se refiere al receptor DQPSK propiamente dicho, se ha investigado y
optimizado cada uno de los bloques funcionales que lo componen. Éstos son básicamente
un divisor de potencia termo-ópticamente sintonizable basado en un interferómetro MZ,
en serie con un interferómetro MZ que introduce un retardo de duración de un bit en uno
de sus brazos, para obtener una correcta demodulación diferencial. El siguiente bloque
que forma parte de nuestro receptor DQPSK es un 2x4 acoplador de interferencia
multimodal actuando como un híbrido de 90 grados, cuyas salidas van a parar a dos
fotodetectores balanceados de germanio.
Las contribuciones principales de esta tesis han sido:
¿ Demostración de un filtro/demultiplexor con tres grados de sintonización con una
relación de extinción superior a 25dB.
¿ Demostración de un rotador con una longitud de tan sólo 25µm y CMOS
compatible.
¿ Demostración de un modulador DPSK a una velocidad máxima de 20 Gbit/s.
¿ Demostración de un demodulador DQPSK a una velocidad máxima de 20 Gbit/s.Due to the relentless emergence of multifunction mobile devices with applications that
require increasingly greater bandwidth at anytime and anywhere, future access networks
must be capable of providing both wireless and wired services. The use of optical
communications systems as transport medium of wireless signals over fiber radio links is
a steady solution to be taken into account. This will make possible a convergence to an
optical domain reducing and alleviating the bottleneck between wireless access standards
and current wired access.
In this thesis, as part of the objectives of the European project HELIOS in which it is
framed, we have investigated and developed the basic functional blocks needed to achieve
an integrated photonic transceiver working in the range of millimetre wavelengths, and
using robust modulation formats that best fit the scope considered.
The work presented in this thesis can be basically divided into three parts. The first one
provides an overview of the benefits of using silicon photonics for the development of
wireless links at rates of Gbps, and the state of the art of the transceivers reported by the
most important research groups in order to meet the increasingly demanding needs¿
market.
The second part focuses on the study and development of millimetre-wave integrated
transmitter. First we provide a brief theoretical introduction of the operation principles of
the devices involved in the transmitter such as a modulation formats, focusing on the
phase shift keying (PSK) which is the one that will be used, particularly the (differential)
quadrature phase shift keying ((D) QPSK). We also present the building blocks involved
in our transmitter and we set the specifications that must be met by these devices in order
to achieve an error-free transmission. The transmitter includes a filter/demultiplexer
which must separate two optical carriers 60 GHz separated. One of these optical carriers
is modulated by passing through a DQPSK Mach-Zehnder-based modulator (MZM) by
arranging two MZMs in a nested configuration. Using a combiner, the modulated optical
signal and the un-modulated carrier are combined and photodetected to be transmitted
wirelessly.
In the third part of this thesis, we investigate the use of a polarization diversity scheme
with an integrated DQPSK receiver for demodulating of the wireless signal. The polarization diversity scheme basically consists of two blocks: a polarization splitter in
order to separate the random polarization state of the incoming light into its two
orthogonal components, and a polarization rotator.
Regarding the DQPSK receiver itself, all the functional blocks that comprise it have been
investigated and optimized. It basically includes a thermo-optically tunable MZ
interferometer power splitter, in series with a MZ interferometer that introduces, in one
of its arms, a delay of one bit length in order to obtain a correct differential demodulation.
The next building block of our DQPSK receiver is a 2x4 multimode interference coupler
acting as a 90 degree hybrid, whose outputs are connected to two balanced germanium
photodetectors.
The main contributions of this thesis are:
¿ Demonstration of a filter/demultiplexer with three degrees of tuning and an
extinction ratio greater than 25dB.
¿ Demonstration of a polarization rotator with a length of only 25¿m and CMOS
compatible.
¿ Demonstration of a DPSK modulator at a maximum rate of 20 Gbit/s.
¿ Demonstration of a DQPSK demodulator to a maximum rate of 20 Gbit/s.Aamer, M. (2013). Development of an integrated silicon photonic transceiver for access networks [Tesis doctoral no publicada]. Universitat Politècnica de València. https://doi.org/10.4995/Thesis/10251/31649TESI
Optical Communication
Optical communication is very much useful in telecommunication systems, data processing and networking. It consists of a transmitter that encodes a message into an optical signal, a channel that carries the signal to its desired destination, and a receiver that reproduces the message from the received optical signal. It presents up to date results on communication systems, along with the explanations of their relevance, from leading researchers in this field. The chapters cover general concepts of optical communication, components, systems, networks, signal processing and MIMO systems. In recent years, optical components and other enhanced signal processing functions are also considered in depth for optical communications systems. The researcher has also concentrated on optical devices, networking, signal processing, and MIMO systems and other enhanced functions for optical communication. This book is targeted at research, development and design engineers from the teams in manufacturing industry, academia and telecommunication industries
Building blocks of a silicon photonic integrated wavelength division multiplexing transmitter for detector instrumentation = Bausteine für einen integrierten siliziumphotonischen Wellenlängenmultiplexsender zur Detektorinstrumentierung
In dieser Arbeit werden Datenübertragungssysteme für die Detektorinstrumentierung und die Herausforderungen dieser einzigartigen Anwendung untersucht. Begrenzt durch die hohe Strahlungsintensität, den verfügbaren Platz, niedrige Temperaturen usw., liegt die Auslesebandbreite von Detektoren nach dem derzeitigen Stand der Technik im Bereich von einigen zehn Gb/s pro Faser. Angesichts des ständig wachsenden Datenvolumens ist die Verbesserung der Übertragungsbandbreite ein dringend zu lösendes Problem. Daher wird in dieser Arbeit ein universell einsetzbares Konzept für einen integrierten, siliziumphotonischen Sender auf Basis der Wellenlängenmultiplex-Technologie vorgeschlagen. Die angestrebte Übertragungsbandbreite in der ersten Version beträgt 40 Gb/s. Zwei Schlüsselbausteine des integrierten Senders, der Mach-Zehnder-Modulator und der Wellenlängen-Demultiplexer, werden im Detail untersucht. Eine Reihe von Modulatoren mit unterschiedlichen Längen und Ätztiefen werden entworfen, hergestellt und charakterisiert. Für den Entwurf des Demultiplexers wird eine angepasste Entwurfsmethode entwickelt, die mit zwei dedizierten Brennpunkten arbeitet. Ein neuer Entwurfsparameter wird in diese Methode eingeführt, um sie flexibler und leichter anwendbar zu machen. Die Auswirkung der Modifizierung des eingeführten Parameters wird anhand einer Reihe vergleichbarer Bauelemente untersucht. Alle Charakterisierungen bestätigen die Machbarkeit des vorgeschlagenen Konzepts
High speed nonlinear optical components for next-generation optical communications
Electronic signal processing systems currently employed at core internet routers require huge amounts of power to operate and they may be unable to continue to satisfy consumer demand for more bandwidth without an inordinate increase in cost, size and/or energy consumption. Optical signal processing techniques may be deployed in next-generation optical networks for simple tasks such as wavelength conversion, demultiplexing and format conversion at high speed (≥100Gb.s-1) to alleviate the pressure on existing core router infrastructure. To implement optical signal processing functionalities, it is necessary to exploit the nonlinear optical properties of suitable materials such as III-V semiconductor compounds, silicon, periodically-poled lithium niobate (PPLN), highly nonlinear fibre (HNLF) or chalcogenide glasses. However, nonlinear optical (NLO) components such as semiconductor optical amplifiers (SOAs), electroabsorption modulators (EAMs) and silicon nanowires are the most promising candidates as all-optical switching elements vis-à-vis ease of integration, device footprint and energy consumption. This PhD thesis presents the amplitude and phase dynamics in a range of device configurations containing SOAs, EAMs and/or silicon nanowires to support the design of all optical switching elements for deployment in next-generation optical networks. Time-resolved pump-probe spectroscopy using pulses with a pulse width of 3ps from mode-locked laser sources was utilized to accurately measure the carrier dynamics in the device(s) under test. The research work into four main topics: (a) a long SOA, (b) the concatenated SOA-EAMSOA (CSES) configuration, (c) silicon nanowires embedded in SU8 polymer and (d) a custom epitaxy design EAM with fast carrier sweepout dynamics. The principal aim was to identify the optimum operation conditions for each of these NLO device configurations to enhance their switching capability and to assess their potential for various optical signal processing functionalities. All of the NLO device configurations investigated in this thesis are compact and suitable for monolithic and/or hybrid integration
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Ultra-energy-efficient Silicon Photonic Modulators Driven by Transparent Conductive Oxides
Silicon photonics has become the most promising platform for future large-scale optical interconnect and optical computing systems due to its inherent CMOS compatibility, which brings exclusive advantages in bandwidth density, energy efficiency, and cost effectiveness. Parallel optical interconnects based on photonic integrated circuits (PICs) have the capacity to meet the high bandwidth density requirement of parallel computing systems, however, are facing the same challenge in energy efficiency and bandwidth limit as their electrical counterparts because the margin shrinks unfavorably for shorter distance optical interconnects. Unprecedented requirement in energy efficiency has been outlined, which poses tremendous challenges to existing PIC devices, even to the state-of-the-arts silicon photonics.
In recent years, transparent conductive oxides (TCOs) have emerged as increasingly favorable tunable materials for active photonic devices. TCOs exhibit a large refractive index tunability on the order of unity, which enables unique epsilon-near-zero (ENZ) light confinement and significant enhancement in light-matter interaction. These intriguing optical properties offer us the potential to expand the functionality and improve the device performance of the silicon photonics platform. This dissertation presents design and demonstration of novel active photonic devices driven by TCOs on silicon photonics platform, with a focus on achieving ultra-energy-efficient silicon photonic modulator.
Three types of photonic devices are investigated. Firstly, an electrically tunable plasmonic subwavelength grating based on a metallic subwavelength slit array coupled with a Si/SiO2/ITO MOS capacitor is designed and demonstrated. We show that large modulation depth can be achieved for both transmission and reflection modes through modifying the electron concentration within 0.5 nm thick TCO accumulation layer. In the second part, we develop a novel device platform of TCO-gated silicon micro-resonators. A Si-TCO photonic crystal (PC) nanocavity modulator is designed and demonstrated. We achieve extreme large wavelength tuning of 250 pm/V, single digit femto-joule per bit energy efficiency, and 2.2 GHz operation bandwidth with a deep sub-λ ultra-small modulation volume. We also propose a strategy to improve bandwidth to over 23GHz and reduce energy consumption to atto-joule per bit level. Besides, TCO-gated microring resonators are investigated for two applications. We design and demonstrate a tunable microring filter with an unprecedented wavelength tuning of 271 pm/V, a large electrical tuning range of 2 nm, and a negligible static energy consumption, which can be used for wavelength division multiplex (WDM) application. A TCO-gated microring modulator is also designed, which can potentially achieve a large operation bandwidth over 50GHz. Lastly, a sub-micron, sub-pico-second, femto-joule level all-optical switch (AOS) using hybrid plasmonic-silicon waveguides driven by high mobility TCOs is proposed. By defining a comprehensive metric using the product of device size, switching energy and switching time, the proposed device shows superior performance than any existing on-chip AOS device.
In addition to the device research, we systematically analyze the energy efficiency and bandwidth limit of resonator-based silicon photonic modulators from three fundamental perspectives: free carrier dispersion strength of the active materials, Purcell factors of the resonators, and electrical configuration of the capacitors. The analysis lays the theoretical foundation and identifies possible routes for achieving atto-joule per bit energy efficiency and approaching the bandwidth limit of silicon photonic modulators.
In summary, TCOs could play an important role in the development of future photonics technology, which provide a CMOS compatible solution to overcome the intrinsic weak E-O effect of the silicon photonics platform, lead to unprecedented reduction in energy consumption, increasing bandwidth, as well as enable novel functionalities. Future researches should include, but not limited to, optimizing the design and fabrication of TCO-driven modulators to reduce series resistance and increasing overlapping factor, integrating TCO-driven devices with photonics foundry fabricated PICs, and developing of high mobility TCOs
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