IGBT Avalanche Current Filamentaion Ratio: Precise Simulations on Mesh and Structure Effect

Current filamentaion effect with dynamic avalanche during turn-off transient in IGBT has been discussed for years. In the prior papers, the possibility of device failure has been reported based on TCAD simulation and simulation results have shown that variety of filamentation phenomena exist for conditions assumed in each simulation. It is discussed in this paper, for the first time, that the relationship of filamentation current concentration strength to device design parameters and categorizes filamentation phenomena, introducing current filamentation ratio (CFR). In the paper, guidelines for appropriate mesh pattern selection are also described to ensure the validity of simulation results.ISPSD 2016 28th International Symposium on Power Semiconductor Devices and ICs., Jun 12-16, 2016, Žofín Palace, Prague, Czech Republi

IGBT Avalanche Current Filamentaion Ratio: Precise Simulations on Mesh and Structure Effect

ISPSD 2016 28th International Symposium on Power Semiconductor Devices and ICs., Jun 12-16, 2016, Žofín Palace, Prague, Czech RepublicCurrent filamentaion effect with dynamic avalanche during turn-off transient in IGBT has been discussed for years. In the prior papers, the possibility of device failure has been reported based on TCAD simulation and simulation results have shown that variety of filamentation phenomena exist for conditions assumed in each simulation. It is discussed in this paper, for the first time, that the relationship of filamentation current concentration strength to device design parameters and categorizes filamentation phenomena, introducing current filamentation ratio (CFR). In the paper, guidelines for appropriate mesh pattern selection are also described to ensure the validity of simulation results

A temperature gradient based Condition Estimation Method for IGBT Module

The paper presents a temperature gradient based method for device state evaluation, taking the insulated Gated Bipolar Transistor (IGBT) modules as an example investigation. Firstly, theoretical basis of this method is presented and the results from example calculation on temperature gradient indicate that the increased thermal resistance and power loss of IGBT modules would increase the temperature gradient. Then an electrical-thermal- mechanical finite element method (FEM) model of IGBT modules, which takes the material temperature-dependent characteristic into account, is utilized to estimate the temperature gradient distribution for both healthy and fatigue conditions. It is found that the temperature gradient varies with power loss. Furthermore, both the experimental and simulation investigation on the temperature gradient for different conditions were conducted, and it is concluded that the temperature gradient can not only track the change of power loss, but have a better sensitivity compared with temperature distribution. In addition, the temperature gradient can reflect the defects location and distinguish failures degree. In the end the influence on the temperature gradient distribution caused by solder fatigue, void and delamination are discussed

State detection of bond wires in IGBT modules using eddy current pulsed thermography

Insulated gate bipolar transistor (IGBT) modules are important safety critical components in electrical power systems. Bond wire lift-off, a plastic deformation between wire bond and adjacent layers of a device caused by repeated power/thermal cycles, is the most common failure mechanism in IGBT modules. For the early detection and characterization of such failures, it is important to constantly detect or monitor the health state of IGBT modules, and the state of bond wires in particular. This paper introduces eddy current pulsed thermography (ECPT), a nondestructive evaluation technique, for the state detection and characterization of bond wire lift-off in IGBT modules. After the introduction of the experimental ECPT system, numerical simulation work is reported. The presented simulations are based on the 3-D electromagnetic-thermal coupling finite-element method and analyze transient temperature distribution within the bond wires. This paper illustrates the thermal patterns of bond wires using inductive heating with different wire statuses (lifted-off or well bonded) under two excitation conditions: nonuniform and uniform magnetic field excitations. Experimental results show that uniform excitation of healthy bonding wires, using a Helmholtz coil, provides the same eddy currents on each, while different eddy currents are seen on faulty wires. Both experimental and numerical results show that ECPT can be used for the detection and characterization of bond wires in power semiconductors through the analysis of the transient heating patterns of the wires. The main impact of this paper is that it is the first time electromagnetic induction thermography, so-called ECPT, has been employed on power/electronic devices. Because of its capability of contactless inspection of multiple wires in a single pass, and as such it opens a wide field of investigation in power/electronic devices for failure detection, performance characterization, and health monitoring

Experimental investigation of direct contact baseplate cooling for electric vehicle power electronics

An experimental setup has been built to investigate the thermo-hydraulic performance of the direct contact baseplate cooling technique for power electronics in electric vehicles, to improve the design and to validate the modelling of this technique. The setup consists of an electrical heater to emulate the heat dissipation of the power electronics and which is cooled by a 60/40% mixture by mass of water-glycol. It is equipped with a flow rate sensor, absolute and differential pressure sensors and temperature measurements at the inlet, outlet and baseplate over the channel length, to determine the performance parameters used in the comparison: thermal resistance and pumping power. Three fluid inlet temperatures, four power levels and four flow rates have been tested for three channel heights (1.5mm, 3mm and 7.6mm). Increasing the fluid temperature and/or heating power, results in a lower thermal resistance and pumping power, due to a lower viscosity of the fluid. The performance of the 1.5mm and 7.6mm channel was found to be quite similar, while the 3mm channel results on average in a 5.8% lower thermal resistance compared to the other two channel heights. The heat transfer in terms of the Nusselt number was also evaluated in function of the Reynolds number. By analyzing the hydraulic and thermal entrance lengths it could be concluded that the flow in all measurements is simultaneously developing. A comparison with two correlations from scientific literature for simultaneously developing flow did not show a good agreement, possibly due to the specific inlet and outlet effect, which is more pronounced for a bigger channel height than a smaller channel height

Temperature Measurement of Power Semiconductor Devices by Thermo-Sensitive Electrical Parameters – A Review

This paper proposes a synthesis of different electrical methods used to estimate the temperature of power semiconductor devices. The following measurement methods are introduced: the voltage under low current levels, the threshold voltage, the voltage under high current levels, the gate-emitter voltage, the saturation current, and the switching times. All these methods are then compared in terms of sensitivity, linearity, accuracy, genericity, calibration needs, and possibility of characterizing the thermal impedance or the temperature during the operation of the converter. The measurement of thermo-sensitive parameters of wide bandgap semiconductors is also discussed. Chip temperature; thermo-sensitive electrical paramete

Two decades of condition monitoring methods for power devices

Condition monitoring (CM) of power semiconductor devices enhances converter reliability and customer service. Many studies have investigated the semiconductor devices failure modes, the sensor technologies, and the signal processing techniques to optimize the CM. Furthermore, the improvement of power devices’ CM thanks to the use of the Internet of Things and artificial intelligence technologies is rising in smart grids, transportation electrification, and so on. These technologies will be widespread in the future, where more and more smart techniques and smart sensors will enable a better estimation of the state of the health (SOH) of the devices. Considering the increasing use of power converters, CM is essential as the analysis of the data obtained from multiple sensors enables the prediction of the SOH, which, in turn, enables to properly schedule the maintenance, i.e., accounting for the trade-off between the maintenance cost and the cost and issues due to the device failure. From this perspective, this review paper summarizes past developments and recent advances of the various methods with the aim of describing the current state-of-the-art in CM research