219 research outputs found

    Side Channel Analysis of a Java-­based Contactless Smart Card

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    Smart cards are widely used in different areas of modern life including identification, banking, and transportation cards. Some types of cards are able to store data and process information as well. A number of them can run cryptographic algorithms to enhance the security of their transactions and it is usually believed that the information and values stored in them are completely safe. However, this is generally not the case due to the threat of the side channel. Side channel analysis is the process of obtaining additional information from the internal activity of a physical device beyond that allowed by its specifications. There exist different techniques to attempt to obtain information from a cryptosystem using other ways than the normally permitted. This thesis presents a series of experiments intended to study the side channel from a particular type of smart card, known as Java Cards. This investigation uses the well known technique, Correlation Analysis, and a new type of side channel attack called fast correlation in the frequency domain to study the side channel of Java Cards. This research presents a giant magnetoresistor (GMR) probe and for the first time, this type of sensor is used to investigate the side channel. A novel setup designed for studying the side channel of smart cards is described and two metrics used to evaluate the analysis results are presented. After testing the GMR probe and methodology on electronic devices executing the Advanced Encryption Standard (AES), such as 8 bit microcontrollers and 128 bit AES implementations on FPGAs, these techniques were applied to analyse two different models of Java Cards working in the contactless mode. The results show that successful attacks on a software implementation of AES running on both models of Java Cards are possible

    The Application of Electromagnetic NDT Method to the inspection of Non- ferrous Cast Materials

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    Inspection of non-ferrous cast material is routinely carried out looking for casting defects inherent for the manufacturing process. The NDT methods employed are Radiography and Ultrasonics, primarily for sub-surface or internal defects and Penetrants fo r surface breaking defects. Electromagnetic techniques have not been used on cast material except maybe for conductivity determination. This limitation resulting fi7om the surface roughness normally associated with cast surfaces and the fact the other techniques mention above have been very successful in finding and evaluating the discontinuities sought. The possible application of Electromagnetic techniques on surfaces in the as-cast condition of non-ferromagnetic material came about because of specific problems experienced by industry. Two major investigations were offered namely; 1) Investigation of CNC material - CuNiCr [1.6%Cr] castings exhibiting oxide entrapment in the form of networks. 2) Investigation of NAB - Nickel Aluminium Bronze exhibiting selective phase corrosion on immersion in seawater. The detection and measurement of both oxide entrapment and phase selective corrosion was difficult and in cases impossible with conventional NDT methods employed for quality control of these material/component types. Time of Flight DiMaction Ultrasonics did give some 50% detectability of phase selective corrosion, but the method was found to be expensive and very time consuming. The metallurgical properties of the material and morphology of the defects have been studied for both Cupro Nickel Chromium and Nickel Aluminium Bronze cast alloys. An investigation was then conducted to study the effects of eddy current signals and their potential in detecting, both linear and cluster type defects which were predominantly interdendritic with some reported as intergranular in nature. For inspecting Cupro Nickel Chromium castings two successful eddy current methods have been developed. Detection of surface flaws was achieved by high frequency [2MHzj examination and subsurface flaws by using low frequencies [1--'IKHz] but using specifically developed sensors that provided good penetration but maintained sensitivity to the fine defects. In the case of Nickel Aluminium Bronze material, the investigation was to look at electromagnetic techniques, which best utilizes the inherent feature of permeability/conductivity associated with this non- ferromagnetic material and any changes that phase selective corrosion may produce. Some meaningful results were obtained using a combination of edd'y current excitation with detection via magneto -re s istive sensors. Testing through 30-40mm of material to detect small magnetic variation produced by only 1-2 mm of corrosion penetration was difficult to quantify. Detection and assessment however appeared hopeful when examination was carried out from the corroded surface. With quantifiable samples a meaningful technique using eddy current excitation and magneto-resistive sensor for detection can be developed

    Performance evaluation of a prototyped wireless ground sensor networks

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    This thesis investigated the suitability of wireless, unattended ground sensor networks for military applications. The unattended aspect requires the network to self-organize and adapt to dynamic changes. A wireless, unattended ground sensor network was prototyped using commercial off-the-shelf technology and three to four networked nodes. Device and network performance were measured under indoor and outdoor scenarios. The measured communication range of a node varied between three and nineteen meters depending on the scenario. The sensors evaluated were an acoustic sensor, a magnetic sensor, and an acceleration sensor. The measured sensing range varied by the type of sensor. Node discovery durations observed were between forty seconds and over five minutes. Node density calculations indicated that the prototype was scalable to five hundred nodes. This thesis substantiated the feasibility of interconnecting, self-organizing sensor nodes in military applications. Tests and evaluations demonstrated that the network was capable of dynamic adaptation to failure and degradation.http://archive.org/details/performanceevalu109452263Approved for public release; distribution is unlimited

    Graphene and Beyond: Recent Advances in Two-Dimensional Materials Synthesis, Properties, and Devices

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    Since the isolation of graphene in 2004, two-dimensional (2D) materials research has rapidly evolved into an entire subdiscipline in the physical sciences with a wide range of emergent applications. The unique 2D structure offers an open canvas to tailor and functionalize 2D materials through layer number, defects, morphology, moir\ue9 pattern, strain, and other control knobs. Through this review, we aim to highlight the most recent discoveries in the following topics: theory-guided synthesis for enhanced control of 2D morphologies, quality, yield, as well as insights toward novel 2D materials; defect engineering to control and understand the role of various defects, including in situ and ex situ methods; and properties and applications that are related to moir\ue9 engineering, strain engineering, and artificial intelligence. Finally, we also provide our perspective on the challenges and opportunities in this fascinating field

    Evaluation of STT-MRAM main memory for HPC and real-time systems

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    It is questionable whether DRAM will continue to scale and will meet the needs of next-generation systems. Therefore, significant effort is invested in research and development of novel memory technologies. One of the candidates for nextgeneration memory is Spin-Transfer Torque Magnetic Random Access Memory (STT-MRAM). STT-MRAM is an emerging non-volatile memory with a lot of potential that could be exploited for various requirements of different computing systems. Being a novel technology, STT-MRAM devices are already approaching DRAM in terms of capacity, frequency and device size. Special STT-MRAM features such as intrinsic radiation hardness, non-volatility, zero stand-by power and capability to function in extreme temperatures also make it particularly suitable for aerospace, avionics and automotive applications. Despite of being a conceivable alternative for main memory technology, to this day, academic research of STT-MRAM main memory remains marginal. This is mainly due to the unavailability of publicly available detailed timing parameters of this novel technology, which are required to perform a cycle accurate main memory simulation. Some researchers adopt simplistic memory models to simulate main memory, but such models can introduce significant errors in the analysis of the overall system performance. Therefore, detailed timing parameters are a must-have for any evaluation or architecture exploration study of STT-MRAM main memory. These detailed parameters are not publicly available because STT-MRAM manufacturers are reluctant to release any delicate information on the technology. This thesis demonstrates an approach to perform a cycle accurate simulation of STT-MRAM main memory, being the first to release detailed timing parameters of this technology from academia, essentially enabling researchers to conduct reliable system level simulation of STT-MRAM using widely accepted existing simulation infrastructure. Our results show that, in HPC domain STT-MRAM provide performance comparable to DRAM. Results from the power estimation indicates that STT-MRAM power consumption increases significantly for Activation/Precharge power while Burst power increases moderately and Background power does not deviate much from DRAM. The thesis includes detailed STT-MRAM main memory timing parameters to the main repositories of DramSim2 and Ramulator, two of the most widely used and accepted state-of-the-art main memory simulators. The STT-MRAM timing parameters that has been originated as a part of this thesis, are till date the only reliable and publicly available timing information on this memory technology published from academia. Finally, the thesis analyzes the feasibility of using STT-MRAM in real-time embedded systems by investigating STT-MRAM main memory impact on average system performance and WCET. STT-MRAM's suitability for the real-time embedded systems is validated on benchmarks provided by the European Space Agency (ESA), EEMBC Autobench and MediaBench suite by analyzing performance and WCET impact. In quantitative terms, our results show that STT-MRAM main memory in real-time embedded systems provides performance and WCET comparable to conventional DRAM, while opening up opportunities to exploit various advantages.Es cuestionable si DRAM continuará escalando y cumplirá con las necesidades de los sistemas de la próxima generación. Por lo tanto, se invierte un esfuerzo significativo en la investigación y el desarrollo de nuevas tecnologías de memoria. Uno de los candidatos para la memoria de próxima generación es la Spin-Transfer Torque Magnetic Random Access Memory (STT-MRAM). STT-MRAM es una memoria no volátil emergente con un gran potencial que podría ser explotada para diversos requisitos de diferentes sistemas informáticos. Al ser una tecnología novedosa, los dispositivos STT-MRAM ya se están acercando a la DRAM en términos de capacidad, frecuencia y tamaño del dispositivo. Las características especiales de STTMRAM, como la dureza intrínseca a la radiación, la no volatilidad, la potencia de reserva cero y la capacidad de funcionar en temperaturas extremas, también lo hacen especialmente adecuado para aplicaciones aeroespaciales, de aviónica y automotriz. A pesar de ser una alternativa concebible para la tecnología de memoria principal, hasta la fecha, la investigación académica de la memoria principal de STT-MRAM sigue siendo marginal. Esto se debe principalmente a la falta de disponibilidad de los parámetros de tiempo detallados públicamente disponibles de esta nueva tecnología, que se requieren para realizar un ciclo de simulación de memoria principal precisa. Algunos investigadores adoptan modelos de memoria simplistas para simular la memoria principal, pero tales modelos pueden introducir errores significativos en el análisis del rendimiento general del sistema. Por lo tanto, los parámetros de tiempo detallados son indispensables para cualquier evaluación o estudio de exploración de la arquitectura de la memoria principal de STT-MRAM. Estos parámetros detallados no están disponibles públicamente porque los fabricantes de STT-MRAM son reacios a divulgar información delicada sobre la tecnología. Esta tesis demuestra un enfoque para realizar un ciclo de simulación precisa de la memoria principal de STT-MRAM, siendo el primero en lanzar parámetros de tiempo detallados de esta tecnología desde la academia, lo que esencialmente permite a los investigadores realizar una simulación confiable a nivel de sistema de STT-MRAM utilizando una simulación existente ampliamente aceptada infraestructura. Nuestros resultados muestran que, en el dominio HPC, STT-MRAM proporciona un rendimiento comparable al de la DRAM. Los resultados de la estimación de potencia indican que el consumo de potencia de STT-MRAM aumenta significativamente para la activation/Precharge power, mientras que la Burst power aumenta moderadamente y la Background power no se desvía mucho de la DRAM. La tesis incluye parámetros detallados de temporización memoria principal de STT-MRAM a los repositorios principales de DramSim2 y Ramulator, dos de los simuladores de memoria principal más avanzados y más utilizados y aceptados. Los parámetros de tiempo de STT-MRAM que se han originado como parte de esta tesis, son hasta la fecha la única información de tiempo confiable y disponible al público sobre esta tecnología de memoria publicada desde la academia. Finalmente, la tesis analiza la viabilidad de usar STT-MRAM en real-time embedded systems mediante la investigación del impacto de la memoria principal de STT-MRAM en el rendimiento promedio del sistema y WCET. La idoneidad de STTMRAM para los real-time embedded systems se valida en los applicaciones proporcionados por la European Space Agency (ESA), EEMBC Autobench y MediaBench, al analizar el rendimiento y el impacto de WCET. En términos cuantitativos, nuestros resultados muestran que la memoria principal de STT-MRAM en real-time embedded systems proporciona un desempeño WCET comparable al de una memoria DRAM convencional, al tiempo que abre oportunidades para explotar varias ventajas

    Gestión de jerarquías de memoria híbridas a nivel de sistema

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    Tesis inédita de la Universidad Complutense de Madrid, Facultad de Informática, Departamento de Arquitectura de Computadoras y Automática y de Ku Leuven, Arenberg Doctoral School, Faculty of Engineering Science, leída el 11/05/2017.In electronics and computer science, the term ‘memory’ generally refers to devices that are used to store information that we use in various appliances ranging from our PCs to all hand-held devices, smart appliances etc. Primary/main memory is used for storage systems that function at a high speed (i.e. RAM). The primary memory is often associated with addressable semiconductor memory, i.e. integrated circuits consisting of silicon-based transistors, used for example as primary memory but also other purposes in computers and other digital electronic devices. The secondary/auxiliary memory, in comparison provides program and data storage that is slower to access but offers larger capacity. Examples include external hard drives, portable flash drives, CDs, and DVDs. These devices and media must be either plugged in or inserted into a computer in order to be accessed by the system. Since secondary storage technology is not always connected to the computer, it is commonly used for backing up data. The term storage is often used to describe secondary memory. Secondary memory stores a large amount of data at lesser cost per byte than primary memory; this makes secondary storage about two orders of magnitude less expensive than primary storage. There are two main types of semiconductor memory: volatile and nonvolatile. Examples of non-volatile memory are ‘Flash’ memory (sometimes used as secondary, sometimes primary computer memory) and ROM/PROM/EPROM/EEPROM memory (used for firmware such as boot programs). Examples of volatile memory are primary memory (typically dynamic RAM, DRAM), and fast CPU cache memory (typically static RAM, SRAM, which is fast but energy-consuming and offer lower memory capacity per are a unit than DRAM). Non-volatile memory technologies in Si-based electronics date back to the 1990s. Flash memory is widely used in consumer electronic products such as cellphones and music players and NAND Flash-based solid-state disks (SSDs) are increasingly displacing hard disk drives as the primary storage device in laptops, desktops, and even data centers. The integration limit of Flash memories is approaching, and many new types of memory to replace conventional Flash memories have been proposed. The rapid increase of leakage currents in Silicon CMOS transistors with scaling poses a big challenge for the integration of SRAM memories. There is also the case of susceptibility to read/write failure with low power schemes. As a result of this, over the past decade, there has been an extensive pooling of time, resources and effort towards developing emerging memory technologies like Resistive RAM (ReRAM/RRAM), STT-MRAM, Domain Wall Memory and Phase Change Memory(PRAM). Emerging non-volatile memory technologies promise new memories to store more data at less cost than the expensive-to build silicon chips used by popular consumer gadgets including digital cameras, cell phones and portable music players. These new memory technologies combine the speed of static random-access memory (SRAM), the density of dynamic random-access memory (DRAM), and the non-volatility of Flash memory and so become very attractive as another possibility for future memory hierarchies. The research and information on these Non-Volatile Memory (NVM) technologies has matured over the last decade. These NVMs are now being explored thoroughly nowadays as viable replacements for conventional SRAM based memories even for the higher levels of the memory hierarchy. Many other new classes of emerging memory technologies such as transparent and plastic, three-dimensional(3-D), and quantum dot memory technologies have also gained tremendous popularity in recent years...En el campo de la informática, el término ‘memoria’ se refiere generalmente a dispositivos que son usados para almacenar información que posteriormente será usada en diversos dispositivos, desde computadoras personales (PC), móviles, dispositivos inteligentes, etc. La memoria principal del sistema se utiliza para almacenar los datos e instrucciones de los procesos que se encuentre en ejecución, por lo que se requiere que funcionen a alta velocidad (por ejemplo, DRAM). La memoria principal está implementada habitualmente mediante memorias semiconductoras direccionables, siendo DRAM y SRAM los principales exponentes. Por otro lado, la memoria auxiliar o secundaria proporciona almacenaje(para ficheros, por ejemplo); es más lenta pero ofrece una mayor capacidad. Ejemplos típicos de memoria secundaria son discos duros, memorias flash portables, CDs y DVDs. Debido a que estos dispositivos no necesitan estar conectados a la computadora de forma permanente, son muy utilizados para almacenar copias de seguridad. La memoria secundaria almacena una gran cantidad de datos aun coste menor por bit que la memoria principal, siendo habitualmente dos órdenes de magnitud más barata que la memoria primaria. Existen dos tipos de memorias de tipo semiconductor: volátiles y no volátiles. Ejemplos de memorias no volátiles son las memorias Flash (algunas veces usadas como memoria secundaria y otras veces como memoria principal) y memorias ROM/PROM/EPROM/EEPROM (usadas para firmware como programas de arranque). Ejemplos de memoria volátil son las memorias DRAM (RAM dinámica), actualmente la opción predominante a la hora de implementar la memoria principal, y las memorias SRAM (RAM estática) más rápida y costosa, utilizada para los diferentes niveles de cache. Las tecnologías de memorias no volátiles basadas en electrónica de silicio se remontan a la década de1990. Una variante de memoria de almacenaje por carga denominada como memoria Flash es mundialmente usada en productos electrónicos de consumo como telefonía móvil y reproductores de música mientras NAND Flash solid state disks(SSDs) están progresivamente desplazando a los dispositivos de disco duro como principal unidad de almacenamiento en computadoras portátiles, de escritorio e incluso en centros de datos. En la actualidad, hay varios factores que amenazan la actual predominancia de memorias semiconductoras basadas en cargas (capacitivas). Por un lado, se está alcanzando el límite de integración de las memorias Flash, lo que compromete su escalado en el medio plazo. Por otra parte, el fuerte incremento de las corrientes de fuga de los transistores de silicio CMOS actuales, supone un enorme desafío para la integración de memorias SRAM. Asimismo, estas memorias son cada vez más susceptibles a fallos de lectura/escritura en diseños de bajo consumo. Como resultado de estos problemas, que se agravan con cada nueva generación tecnológica, en los últimos años se han intensificado los esfuerzos para desarrollar nuevas tecnologías que reemplacen o al menos complementen a las actuales. Los transistores de efecto campo eléctrico ferroso (FeFET en sus siglas en inglés) se consideran una de las alternativas más prometedores para sustituir tanto a Flash (por su mayor densidad) como a DRAM (por su mayor velocidad), pero aún está en una fase muy inicial de su desarrollo. Hay otras tecnologías algo más maduras, en el ámbito de las memorias RAM resistivas, entre las que cabe destacar ReRAM (o RRAM), STT-RAM, Domain Wall Memory y Phase Change Memory (PRAM)...Depto. de Arquitectura de Computadores y AutomáticaFac. de InformáticaTRUEunpu

    Goddard Conference on Mass Storage Systems and Technologies, volume 2

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    Papers and viewgraphs from the conference are presented. Discussion topics include the IEEE Mass Storage System Reference Model, data archiving standards, high-performance storage devices, magnetic and magneto-optic storage systems, magnetic and optical recording technologies, high-performance helical scan recording systems, and low end helical scan tape drives. Additional discussion topics addressed the evolution of the identifiable unit for processing (file, granule, data set, or some similar object) as data ingestion rates increase dramatically, and the present state of the art in mass storage technology

    The application of electromagnetic NDT method to the inspection of non-ferrous cast materials

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    Inspection of non-ferrous cast material is routinely carried out looking for casting defects inherent for the manufacturing process. The NDT methods employed are Radiography and Ultrasonics, primarily for sub-surface or internal defects and Penetrants fo r surface breaking defects. Electromagnetic techniques have not been used on cast material except maybe for conductivity determination. This limitation resulting fi7om the surface roughness normally associated with cast surfaces and the fact the other techniques mention above have been very successful in finding and evaluating the discontinuities sought. The possible application of Electromagnetic techniques on surfaces in the as-cast condition of non-ferromagnetic material came about because of specific problems experienced by industry. Two major investigations were offered namely; 1) Investigation of CNC material - CuNiCr [1.6%Cr] castings exhibiting oxide entrapment in the form of networks. 2) Investigation of NAB - Nickel Aluminium Bronze exhibiting selective phase corrosion on immersion in seawater. The detection and measurement of both oxide entrapment and phase selective corrosion was difficult and in cases impossible with conventional NDT methods employed for quality control of these material/component types. Time of Flight DiMaction Ultrasonics did give some 50% detectability of phase selective corrosion, but the method was found to be expensive and very time consuming. The metallurgical properties of the material and morphology of the defects have been studied for both Cupro Nickel Chromium and Nickel Aluminium Bronze cast alloys. An investigation was then conducted to study the effects of eddy current signals and their potential in detecting, both linear and cluster type defects which were predominantly interdendritic with some reported as intergranular in nature. For inspecting Cupro Nickel Chromium castings two successful eddy current methods have been developed. Detection of surface flaws was achieved by high frequency [2MHzj examination and subsurface flaws by using low frequencies [1--'IKHz] but using specifically developed sensors that provided good penetration but maintained sensitivity to the fine defects. In the case of Nickel Aluminium Bronze material, the investigation was to look at electromagnetic techniques, which best utilizes the inherent feature of permeability/conductivity associated with this non- ferromagnetic material and any changes that phase selective corrosion may produce. Some meaningful results were obtained using a combination of edd'y current excitation with detection via magneto -re s istive sensors. Testing through 30-40mm of material to detect small magnetic variation produced by only 1-2 mm of corrosion penetration was difficult to quantify. Detection and assessment however appeared hopeful when examination was carried out from the corroded surface. With quantifiable samples a meaningful technique using eddy current excitation and magneto-resistive sensor for detection can be developed.EThOS - Electronic Theses Online ServiceGBUnited Kingdo
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