Real time unsupervised learning of visual stimuli in neuromorphic VLSI systems

Neuromorphic chips embody computational principles operating in the nervous system, into microelectronic devices. In this domain it is important to identify computational primitives that theory and experiments suggest as generic and reusable cognitive elements. One such element is provided by attractor dynamics in recurrent networks. Point attractors are equilibrium states of the dynamics (up to fluctuations), determined by the synaptic structure of the network; a `basin' of attraction comprises all initial states leading to a given attractor upon relaxation, hence making attractor dynamics suitable to implement robust associative memory. The initial network state is dictated by the stimulus, and relaxation to the attractor state implements the retrieval of the corresponding memorized prototypical pattern. In a previous work we demonstrated that a neuromorphic recurrent network of spiking neurons and suitably chosen, fixed synapses supports attractor dynamics. Here we focus on learning: activating on-chip synaptic plasticity and using a theory-driven strategy for choosing network parameters, we show that autonomous learning, following repeated presentation of simple visual stimuli, shapes a synaptic connectivity supporting stimulus-selective attractors. Associative memory develops on chip as the result of the coupled stimulus-driven neural activity and ensuing synaptic dynamics, with no artificial separation between learning and retrieval phases.Comment: submitted to Scientific Repor

Spiking Neural Networks for Inference and Learning: A Memristor-based Design Perspective

On metrics of density and power efficiency, neuromorphic technologies have the potential to surpass mainstream computing technologies in tasks where real-time functionality, adaptability, and autonomy are essential. While algorithmic advances in neuromorphic computing are proceeding successfully, the potential of memristors to improve neuromorphic computing have not yet born fruit, primarily because they are often used as a drop-in replacement to conventional memory. However, interdisciplinary approaches anchored in machine learning theory suggest that multifactor plasticity rules matching neural and synaptic dynamics to the device capabilities can take better advantage of memristor dynamics and its stochasticity. Furthermore, such plasticity rules generally show much higher performance than that of classical Spike Time Dependent Plasticity (STDP) rules. This chapter reviews the recent development in learning with spiking neural network models and their possible implementation with memristor-based hardware

X-SRAM: Enabling In-Memory Boolean Computations in CMOS Static Random Access Memories

Silicon-based Static Random Access Memories (SRAM) and digital Boolean logic have been the workhorse of the state-of-art computing platforms. Despite tremendous strides in scaling the ubiquitous metal-oxide-semiconductor transistor, the underlying \textit{von-Neumann} computing architecture has remained unchanged. The limited throughput and energy-efficiency of the state-of-art computing systems, to a large extent, results from the well-known \textit{von-Neumann bottleneck}. The energy and throughput inefficiency of the von-Neumann machines have been accentuated in recent times due to the present emphasis on data-intensive applications like artificial intelligence, machine learning \textit{etc}. A possible approach towards mitigating the overhead associated with the von-Neumann bottleneck is to enable \textit{in-memory} Boolean computations. In this manuscript, we present an augmented version of the conventional SRAM bit-cells, called \textit{the X-SRAM}, with the ability to perform in-memory, vector Boolean computations, in addition to the usual memory storage operations. We propose at least six different schemes for enabling in-memory vector computations including NAND, NOR, IMP (implication), XOR logic gates with respect to different bit-cell topologies $-$ the 8T cell and the 8$^+$T Differential cell. In addition, we also present a novel \textit{`read-compute-store'} scheme, wherein the computed Boolean function can be directly stored in the memory without the need of latching the data and carrying out a subsequent write operation. The feasibility of the proposed schemes has been verified using predictive transistor models and Monte-Carlo variation analysis.Comment: This article has been accepted in a future issue of IEEE Transactions on Circuits and Systems-I: Regular Paper