(Invited) mm-wave silicon ICs: An opportunity for holistic design

Millimeter-waves integrated circuits offer a unique opportunity for a holistic design approach encompassing RF, analog, and digital, as well as radiation and electromagnetics. The ability to deal with the complete system from the digital circuitry to on-chip antennas and everything in between offers unparalleled opportunities for completely new architectures and topologies, previously impossible due the traditional partitioning of various blocks in conventional design. This opens a plethora of new architectural and system level innovation within the integrated circuit platform. This paper reviews some of the challenges and opportunities for mm-wave ICs and presents several solutions to them

Exploiting smallest error to calibrate non-linearity in SAR ADCs

This paper presents a statistics-optimised organisation technique to achieve better element matching in Successive Approximation Register (SAR) Analog-to-Digital Converter (ADC) in smart sensor systems. We demonstrate the proposed technique ability to achieve a significant improvement of around 23 dB on Spurious Free Dynamic Range (SFDR) of the ADC than the conventional, testing with a capacitor mismatch σu = 0.2% in a 14 bit SAR ADC system. For the static performance, the max root mean square (rms) value of differential nonlinearity (DNL) reduces from 1.63 to 0.20 LSB and the max rms value of integral nonlinearity (INL) reduces from 2.10 to 0.21 LSB. In addition, it is demonstrated that by applying grouping optimisation and strategy optimisation, the performance boosting on SFDR can be effectively achieved. Such great improvement on the resolution of the ADC only requires an off-line pre-processing digital part

A Spectral-Scanning Nuclear Magnetic Resonance Imaging (MRI) Transceiver

An integrated spectral-scanning nuclear magnetic resonance imaging (MRI) transceiver is implemented in a 0.12 mum SiGe BiCMOS process. The MRI transmitter and receiver circuitry is designed specifically for small-scale surface MRI diagnostics applications where creating low (below 1 T) and inhomogeneous magnetic field is more practical. The operation frequency for magnetic resonance detection and analysis is tunable from 1 kHz to 37 MHz, corresponding to 0-0.9 T magnetization for ^1H (hydrogen). The concurrent measurement bandwidth is approximately one frequency octave. The chip can also be used for conventional narrowband nuclear magnetic resonance (NMR) spectroscopy from 1 kHz up to 250 MHz. This integrated transceiver consists of both the magnetic resonance transmitter which generates the required excitation pulses for the magnetic dipole excitation, and the receiver which recovers the responses of the dipoles

Flash-memories in Space Applications: Trends and Challenges

Nowadays space applications are provided with a processing power absolutely overcoming the one available just a few years ago. Typical mission-critical space system applications include also the issue of solid-state recorder(s). Flash-memories are nonvolatile, shock-resistant and power-economic, but in turn have different drawbacks. A solid-state recorder for space applications should satisfy many different constraints especially because of the issues related to radiations: proper countermeasures are needed, together with EDAC and testing techniques in order to improve the dependability of the whole system. Different and quite often contrasting dimensions need to be explored during the design of a flash-memory based solid- state recorder. In particular, we shall explore the most important flash-memory design dimensions and trade-offs to tackle during the design of flash-based hard disks for space application

Equalization of Third-Order Intermodulation Products in Wideband Direct Conversion Receivers

This paper reports a SAW-less direct-conversion receiver which utilizes a mixed-signal feedforward path to regenerate and adaptively cancel IM3 products, thus accomplishing system-level linearization. The receiver system performance is dominated by a custom integrated RF front end implemented in 130-nm CMOS and achieves an uncorrected out-of-band IIP3 of -7.1 dBm under the worst-case UMTS FDD Region 1 blocking specifications. Under IM3 equalization, the receiver achieves an effective IIP3 of +5.3 dBm and meets the UMTS BER sensitivity requirement with 3.7 dB of margin