461 research outputs found

    Area-power-delay trade-off in logic synthesis

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    This thesis introduces new concepts to perform area-power-delay trade-offs in a logic synthesis system. To achieve this, a new delay model is presented, which gives accurate delay estimations for arbitrary sets of Boolean expressions. This allows use of this delay model already during the very first steps of logic synthesis. Furthermore, new algorithms are presented for a number of different optimization tasks within logic synthesis. There are new algorithms to create prime irredundant Boo lean expressions, to perform technology mapping for use with standard cell generators, and to perform gate sizing. To prove the validity of the presented ideas, benchmark results are given throughout the thesis

    A 12GHz 30mW 130nm CMOS Rotary Travelling Wave Voltage Controlled Oscillator

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    This paper reports a 12GHz Rotary Travelling Wave (RTW) Voltage Controlled Oscillator designed in a 130nm CMOS technology. The phase noise and power consumption performances were compared with the literature and with telecommunication standards for broadcast satellite applications. The RTW VCO exhibits a -106dBc/Hz@1MHz and a 30mW power consumption with a sensibility of 400 MHz/V. Finally, requirements are given for a PLL implementation of the RTW VCO and simulated results are presented

    Technology library modeling for information-driven circuit synthesis

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    Due to weaknesses in circuit synthesis methods used in todaypsilas CAD tools, the opportunities created by modern microelectronic technology cannot effectively be exploited. This paper considers major issues and requirements of circuit synthesis for the nano CMOS technologies, and discusses our new information-driven circuit synthesis technology that satisfies these requirements. It focuses on an adequate technology library modelling for information-driven circuit synthesis. The new circuit synthesis technology considerably differs from all other known synthesis methods and overcomes their main weaknesses. The experimental results demonstrate that it is able to produce very fast, compact and low-power circuits

    On the dynamics of ECL inverter based Ring Oscillators

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    The effect of electrical variations in free running frequency and in the dynamics of BJT based Ring Oscillator (RO) have been thoroughly examined in this paper. Techniques of electronic frequency tuning of an emitter coupled inverter based RO have been experimentally studied. The oscillation frequency of the RO depends on the dc reference voltage and the dc bias current. An analytical explanation of the observed results has been incorporated in this paper. The dynamics of the said hardware experimental circuit also have been scrupulously examined. It is observed that a periodic oscillation starts for a given reference voltage and gradual variations of the reference voltage in this region give rise to different multi periodic and chaotic oscillations. A higher order nonlinear mathematical model of the RO circuit has been proposed and the system has been numerically studied. The numerical simulations results support the experimental observations

    Circuit design in complementary organic technologies

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    Optimization of buffer placement by simulated annealing

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    Design and analysis of SRAMs for energy harvesting systems

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    PhD ThesisAt present, the battery is employed as a power source for wide varieties of microelectronic systems ranging from biomedical implants and sensor net-works to portable devices. However, the battery has several limitations and incurs many challenges for the majority of these systems. For instance, the design considerations of implantable devices concern about the battery from two aspects, the toxic materials it contains and its lifetime since replacing the battery means a surgical operation. Another challenge appears in wire-less sensor networks, where hundreds or thousands of nodes are scattered around the monitored environment and the battery of each node should be maintained and replaced regularly, nonetheless, the batteries in these nodes do not all run out at the same time. Since the introduction of portable systems, the area of low power designs has witnessed extensive research, driven by the industrial needs, towards the aim of extending the lives of batteries. Coincidentally, the continuing innovations in the field of micro-generators made their outputs in the same range of several portable applications. This overlap creates a clear oppor-tunity to develop new generations of electronic systems that can be powered, or at least augmented, by energy harvesters. Such self-powered systems benefit applications where maintaining and replacing batteries are impossi-ble, inconvenient, costly, or hazardous, in addition to decreasing the adverse effects the battery has on the environment. The main goal of this research study is to investigate energy harvesting aware design techniques for computational logic in order to enable the capa- II bility of working under non-deterministic energy sources. As a case study, the research concentrates on a vital part of all computational loads, SRAM, which occupies more than 90% of the chip area according to the ITRS re-ports. Essentially, this research conducted experiments to find out the design met-ric of an SRAM that is the most vulnerable to unpredictable energy sources, which has been confirmed to be the timing. Accordingly, the study proposed a truly self-timed SRAM that is realized based on complete handshaking protocols in the 6T bit-cell regulated by a fully Speed Independent (SI) tim-ing circuitry. The study proved the functionality of the proposed design in real silicon. Finally, the project enhanced other performance metrics of the self-timed SRAM concentrating on the bit-line length and the minimum operational voltage by employing several additional design techniques.Umm Al-Qura University, the Ministry of Higher Education in the Kingdom of Saudi Arabia, and the Saudi Cultural Burea

    Design of variation-tolerant synchronizers for multiple clock and voltage domains

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    PhD ThesisParametric variability increasingly affects the performance of electronic circuits as the fabrication technology has reached the level of 32nm and beyond. These parameters may include transistor Process parameters (such as threshold voltage), supply Voltage and Temperature (PVT), all of which could have a significant impact on the speed and power consumption of the circuit, particularly if the variations exceed the design margins. As systems are designed with more asynchronous protocols, there is a need for highly robust synchronizers and arbiters. These components are often used as interfaces between communication links of different timing domains as well as sampling devices for asynchronous inputs coming from external components. These applications have created a need for new robust designs of synchronizers and arbiters that can tolerate process, voltage and temperature variations. The aim of this study was to investigate how synchronizers and arbiters should be designed to tolerate parametric variations. All investigations focused mainly on circuit-level and transistor level designs and were modeled and simulated in the UMC90nm CMOS technology process. Analog simulations were used to measure timing parameters and power consumption along with a “Monte Carlo” statistical analysis to account for process variations. Two main components of synchronizers and arbiters were primarily investigated: flip-flop and mutual-exclusion element (MUTEX). Both components can violate the input timing conditions, setup and hold window times, which could cause metastability inside their bistable elements and possibly end in failures. The mean-time between failures is an important reliability feature of any synchronizer delay through the synchronizer. The MUTEX study focused on the classical circuit, in addition to a number of tolerance, based on increasing internal gain by adding current sources, reducing the capacitive loading, boosting the transconductance of the latch, compensating the existing Miller capacitance, and adding asymmetry to maneuver the metastable point. The results showed that some circuits had little or almost no improvements, while five techniques showed significant improvements by reducing τ and maintaining high tolerance. Three design approaches are proposed to provide variation-tolerant synchronizers. wagging synchronizer proposed to First, the is significantly increase reliability over that of the conventional two flip-flop synchronizer. The robustness of the wagging technique can be enhanced by using robust τ latches or adding one more cycle of synchronization. The second approach is the Metastability Auto-Detection and Correction (MADAC) latch which relies on swiftly detecting a metastable event and correcting it by enforcing the previously stored logic value. This technique significantly reduces the resolution time down from uncertain synchronization technique is proposed to transfer signals between Multiple- Voltage Multiple-Clock Domains (MVD/MCD) that do not require conventional level-shifters between the domains or multiple power supplies within each domain. This interface circuit uses a synchronous set and feedback reset protocol which provides level-shifting and synchronization of all signals between the domains, from a wide range of voltage-supplies and clock frequencies. Overall, synchronizer circuits can tolerate variations to a greater extent by employing the wagging technique or using a MADAC latch, while MUTEX tolerance can suffice with small circuit modifications. Communication between MVD/MCD can be achieved by an asynchronous handshake without a need for adding level-shifters.The Saudi Arabian Embassy in London, Umm Al-Qura University, Saudi Arabi

    Low energy digital circuits in advanced nanometer technologies

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    The demand for portable devices and the continuing trend towards the Internet ofThings (IoT) have made of energy consumption one of the main concerns in the industry and researchers. The most efficient way of reducing the energy consump-tion of digital circuits is decreasing the supply voltage (Vdd) since the dynamicenergy quadratically depends onVdd. Several works have shown that an optimumsupply voltage exists that minimizes the energy consumption of digital circuits. This optimum supply voltage is usually around 200 mV and 400 mV dependingon the circuit and technology used. To obtain these low supply voltages, on-chipdc-dc converters with high efficiency are needed.This thesis focuses on the study of subthreshold digital systems in advancednanometer technologies. These systems usually can be divided into a Power Man-agement Unit (PMU) and a digital circuit operating at the subthreshold regime.In particular, while considering the PMU, one of the key circuits is the dc-dcconverter. This block converts the voltage from the power source (battery, supercapacitor or wireless power transfer link) to a voltage between 200 mV and 400mV in order to power the digital circuit. In this thesis, we developed two chargerecycling techniques in order to improve the efficiency of switched capacitors dc-dcconverters. The first one is based on a technique used in adiabatic circuits calledstepwise charging. This technique was used in circuits and applications wherethe switching consumption of a big capacitance is very important. We analyzedthe possibility of using this technique in switched capacitor dc-dc converters withintegrated capacitors. We showed through measurements that a 29% reductionin the gate drive losses can be obtained with this technique. The second one isa simplification of stepwise charging which can be applied in some architecturesof switched capacitors dc-dc converters. We also fabricated and tested a dc-dcconverter with this technique and obtained a 25% energy reduction in the drivingof the switches that implement the converter.Furthermore, we studied the digital circuit working in the subthreshold regime,in particular, operating at the minimum energy point. We studied different modelsfor circuits working in these conditions and improved them by considering thedifferences between the NMOS and PMOS transistors. We obtained an optimumNMOS/PMOS leakage current imbalance that minimizes the total leakage energy per operation. This optimum depends on the architecture of the digital circuitand the input data. However, we also showed that important energy reductionscan be obtained by operating at a mean optimum imbalance. We proposed two techniques to achieve the optimum imbalance. We used aFully Depleted Silicon on Insulator (FD-SOI) 28 nm technology for most of the simulations, but we also show that these techniques can be applied in traditionalbulk CMOS technologies. The first one consists in using the back plane voltage of the transistors (or bulk voltage in traditional CMOS) to adjust independently theleakage current of the NMOS and PMOS transistor to work under the optimum NMOS/PMOS leakage current imbalance. We called this approach the OptimumBack Plane Biasing (OBB). A second technique consists of using the length of the transistors to adjust this leakage current imbalance. In the subthreshold regimeand in advanced nanometer technologies a moderate increase in the length has little impact in the output capacitance of the gates and thus in the dynamic energy.We called this approach an Asymmetric Length Biasing (ALB). Finally, we use these techniques in some basic circuits such as adders. We show that around 50% energy reduction can be obtained, in a wide range of frequency while working near the minimum energy point and using these techniques. The main contributions of this thesis are: • Analysis of the stepwise charging technique in small capacitances. •Implementation of stepwise charging technique as a charge recycling tech-nique for efficiency improvement in switched capacitor dc-dc converters. • Development of a charge sharing technique for efficiency improvement inswitched capacitor dc-dc converters. • Analysis of minimum operating voltage of digital circuits due to intrinsicnoise and the impact of technology scaling in this minimum. • Improvement in the modeling of the minimum energy point while considering NMOS and PMOS transistors difference. • Demonstration of the existence of an optimum leakage current imbalance be-tween the NMOS and PMOS transistors that minimizes energy consumptionin the subthreshold regiion. • Development of a back plane (bulk) voltage strategy for working in this optimum.• Development of a sizing strategy for working in the aforementioned optimum. • Analysis of the impact of architecture and input data on the optimum im-balance. The thesis is based on the publications [1–8]. During the Ph.D. program, other publications were generated [9–16] that are partially related with the thesis butwere not included in it.La constante demanda de dispositivos portables y los avances hacia la Internet de las Cosas han hecho del consumo de energía uno de los mayores desafíos y preocupación en la industria y la academia. La forma más eficiente de reducir el consumo de energía de los circuitos digitales es reduciendo su voltaje de alimentación ya que la energía dinámica depende de manera cuadrática con dicho voltaje. Varios trabajos demostraron que existe un voltaje de alimentación óptimo, que minimiza la energía consumida para realizar cierta operación en un circuito digital, llamado punto de mínima energía. Este óptimo voltaje se encuentra usualmente entre 200 mV y 400 mV dependiendo del circuito y de la tecnología utilizada. Para obtener estos voltajes de alimentación de la fuente de energía, se necesitan conversores dc-dc integrados con alta eficiencia. Esta tesis se concentra en el estudio de sistemas digitales trabajando en la región sub umbral diseñados en tecnologías nanométricas avanzadas (28 nm). Estos sistemas se pueden dividir usualmente en dos bloques, uno llamado bloque de manejo de potencia, y el segundo, el circuito digital operando en la region sub umbral. En particular, en lo que corresponde al bloque de manejo de potencia, el circuito más crítico es en general el conversor dc-dc. Este circuito convierte el voltaje de una batería (o super capacitor o enlace de transferencia inalámbrica de energía o unidad de cosechado de energía) en un voltaje entre 200 mV y 400 mV para alimentar el circuito digital en su voltaje óptimo. En esta tesis desarrollamos dos técnicas que, mediante el reciclado de carga, mejoran la eficiencia de los conversores dc-dc a capacitores conmutados. La primera es basada en una técnica utilizada en circuitos adiabáticos que se llama carga gradual o a pasos. Esta técnica se ha utilizado en circuitos y aplicaciones en donde el consumo por la carga y descarga de una capacidad grande es dominante. Nosotros analizamos la posibilidad de utilizar esta técnica en conversores dc-dc a capacitores conmutados con capacitores integrados. Se demostró a través de medidas que se puede reducir en un 29% el consumo debido al encendido y apagado de las llaves que implementan el conversor dc-dc. La segunda técnica, es una simplificación de la primera, la cual puede ser aplicada en ciertas arquitecturas de conversores dc-dc a capacitores conmutados. También se fabricó y midió un conversor con esta técnica y se obtuvo una reducción del 25% en la energía consumida por el manejo de las llaves del conversor. Por otro lado, estudiamos los circuitos digitales operando en la región sub umbral y en particular cerca del punto de mínima energía. Estudiamos diferentes modelos para circuitos operando en estas condiciones y los mejoramos considerando las diferencias entre los transistores NMOS y PMOS. Mediante este modelo demostramos que existe un óptimo en la relación entre las corrientes de fuga de ambos transistores que minimiza la energía de fuga consumida por operación. Este óptimo depende de la arquitectura del circuito digital y ademas de los datos de entrada del circuito. Sin embargo, demostramos que se puede reducir el consumo de manera considerable al operar en un óptimo promedio. Propusimos dos técnicas para alcanzar la relación óptima. Utilizamos una tecnología FD-SOI de 28nm para la mayoría de las simulaciones, pero también mostramos que estas técnicas pueden ser utilizadas en tecnologías bulk convencionales. La primer técnica, consiste en utilizar el voltaje de la puerta trasera (o sustrato en CMOS convencional) para ajustar de manera independiente las corrientes del NMOS y PMOS para que el circuito trabaje en el óptimo de la relación de corrientes. Esta técnica la llamamos polarización de voltaje de puerta trasera óptimo. La segunda técnica, consiste en utilizar los largos de los transistores para ajustar las corrientes de fugas de cada transistor y obtener la relación óptima. Trabajando en la región sub umbral y en tecnologías avanzadas, incrementar moderadamente el largo del transistor tiene poco impacto en la energía dinámica y es por eso que se puede utilizar. Finalmente, utilizamos estas técnicas en circuitos básicos como sumadores y mostramos que se puede obtener una reducción de la energía consumida de aproximadamente 50%, en un amplio rango de frecuencias, mientras estos circuitos trabajan cerca del punto de energía mínima. Las principales contribuciones de la tesis son: • Análisis de la técnica de carga gradual o a pasos en capacidades pequeñas. • Implementación de la técnica de carga gradual para la mejora de eficiencia de conversores dc-dc a capacitores conmutados. • Simplificación de la técnica de carga gradual para mejora de la eficiencia en algunas arquitecturas de conversores dc-dc de capacitores conmutados. • Análisis del mínimo voltaje de operación en circuitos digitales debido al ruido intrínseco del dispositivo y el impacto del escalado de las tecnologías en el mismo. • Mejoras en el modelado del punto de energía mínima de operación de un circuito digital en el cual se consideran las diferencias entre el transistor PMOS y NMOS. • Demostración de la existencia de un óptimo en la relación entre las corrientes de fuga entre el NMOS y PMOS que minimiza la energía de fugas consumida en la región sub umbral. • Desarrollo de una estrategia de polarización del voltaje de puerta trasera para que el circuito digital trabaje en el óptimo antes mencionado. • Desarrollo de una estrategia para el dimensionado de los transistores que componen las compuertas digitales que permite al circuito digital operar en el óptimo antes mencionado. • Análisis del impacto de la arquitectura del circuito y de los datos de entrada del mismo en el óptimo antes mencionado
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