Silicon-organic hybrid photonics: Overview of recent advances, electro-optical effects and CMOS-integration concepts

In recent decades, much research effort has been invested in the development of photonic integrated circuits, and silicon-on-insulator technology has been established as a reliable platform for highly scalable silicon-based electro-optical modulators. However, the performance of such devices is restricted by the inherent material properties of silicon. An approach to overcoming these deficiencies is to integrate organic materials with exceptionally high optical nonlinearities into a silicon-on-insulator photonic platform. Silicon–organic hybrid photonics has been shown to overcome the drawbacks of silicon-based modulators in terms of operating speed, bandwidth, and energy consumption. This work reviews recent advances in silicon–organic hybrid photonics and covers the latest improvements to single components and device concepts. Special emphasis is given to the in-device performance of novel electro-optical polymers and the use of different electro-optical effects, such as the linear and quadratic electro-optical effect, as well as the electric-field-induced linear electro-optical effect. Finally, the inherent challenges of implementing non-linear optical polymers on a silicon photonic platform are discussed and a perspective for future directions is given

Plasmonic-Organic and Silicon-Organic Hybrid Modulators for High-Speed Signal Processing

High-speed electro-optic (EO) modulators are key devices for optical communications, microwave photonics, and for broadband signal processing. Among the different material platforms for high-density photonic integrated circuits (PIC), silicon photonics sticks out because of CMOS foundries specialized in PIC fabrication. However, the absence of the Pockels effect in silicon renders EO modulators with high-efficiency and large modulation bandwidth difficult. In this dissertation, plasmonic and photonic slot waveguide modulators are investigated. The devices are built on the silicon platform and are combined with highly-efficient organic EO materials. Using such a hybrid platform, we realize compact and fast plasmonic-organic hybrid (POH) and silicon-organic hybrid (SOH) modulators. As an application example, we demonstrate for the first time an advanced terahertz communication link by directly converting data on a 360 GHz carrier to a data stream on an optical carrier. For optical transmitter applications, we overcome the bandwidth limitation of conventional SOH modulators by introducing a high-k dielectric microwave slotline for guiding the modulating radio-frequency signal which is capacitively-coupled to the EO modulating region. We confirm the viability of such capacitively-coupled SOH modulators by generating four-state pulse amplitude modulated signals with data rates up to 200 Gbit/s

Silicon - polymer hybrid integrated microwave photonic devices for optical interconnects and electromagnetic wave detection

textThe accelerating increase in information traffic demands the expansion of optical access network systems that require high-performance optical and photonic components. In short-range communication links, optical interconnects have been widely accepted as a viable approach to solve the problems that copper based electrical interconnects have encountered in keeping up with the surge in the data rate demand over the last decades. Low cost, ease of fabrication, and integration capabilities of low optical-loss polymers make them attractive for integrated photonic applications to support futuristic data communication networks. In addition to passive wave-guiding components, electro-optic (EO) polymers consisting of a polymeric matrix doped with organic nonlinear chromophores have enabled wide-RF-bandwidth and low-power active photonic devices. Beside board level passive and active optical components, on-chip micro- or nano-photonic devices have been made possible by the hybrid integration of EO polymers onto the silicon platform. In recent years, silicon photonics have attracted a significant amount of attentions, because it offers compact device size and the potential of complementary metal–oxide–semiconductor (CMOS) compatible photonic integrated circuits. The combination of silicon photonics and EO polymers can enable miniaturized and high-performance hybrid integrated photonic devices, such as electro-optic modulators, optical interconnects, and microwave photonic sensors. Silicon photonic crystal waveguides (PCWs) exhibit slow-light effects which are beneficial for device miniaturization. Especially, EO polymer filled silicon slotted PCWs further reduce the device size and enhance the device performance by combining the best of these two systems. The potential applications of these silicon-polymer hybrid integrated devices include not only optical interconnects, but also optical sensing and microwave photonics. In this dissertation, the design, fabrication, and characterization of several types of silicon-polymer hybrid photonic devices will be presented, including EO polymer filled silicon PCW modulators for on-chip optical interconnects, antenna-coupled optical modulators for electromagnetic wave detections, and low-loss strip-to-slot PCW mode converters. In addition, some polymer-based devices and silicon-based photonic devices will also be presented, such as traveling wave electro-optic polymer modulators based on domain-inversion directional couplers, and silicon thermo-optic switches based on coupled photonic crystal microcavities. Furthermore, some microwave (or RF) components such as integrated broadband bowtie antennas for microwave photonic applications will be covered. Some on-going work or suggested future work will also be introduced, including in-device pyroelectric poling for EO polymer filled silicon slot PCWs, millimeter- or Terahertz-wave sensors based on EO polymer filled plasmonic slot waveguide, low-loss silicon-polymer hybrid slot photonic crystal waveguides fabricated by CMOS foundry, logic devices based on EO polymer microring resonators, and so on.Electrical and Computer Engineerin

Transfer printing for heterogeneous silicon PICs

Photonic integrated circuits (PICs), implementing optical functions such as light generation, modulation, routing and detection on a single chip, are emerging as a powerful platform to realize miniaturized optical systems. These chips find applications in various fields, ranging from high-speed optical transceivers to disposable biosensors, LiDARs for detection and ranging, spectroscopic analytical sensors, etc. Silicon photonics is the field that is using silicon fabrication technologies, developed over the last decades for advanced electronic integrated circuits, to realize PI Cs. Using this approach advanced PICs can be realized on 200 mm or 300 mm wafers in high volume and at low cost. On the silicon photonics platform many device structures are readily available: Si or SiN waveguides, micro-heaters for tuning/switching, Si or Ge based modulators and photodetectors. However, other optical functions such as light generation require the integration of III-V semiconductors on the silicon wafers. This can be realized using different approaches ranging from hybrid assembly over die-towafer bonding to monolithic integration. Every approach has its advantages and disadvantages. An interesting approach that we are developing is the use of microtransfer- printing technology for the integration of III-V semiconductor devices on a silicon photonic wafer, which is a scalable and minimally-invasive approach

Silicon-organic hybrid electro-optical devices

Organic materials combined with strongly guiding silicon waveguides open the route to highly efficient electro-optical devices. Modulators based on the so-called silicon-organic hybrid (SOH) platform have only recently shown frequency responses up to 100 GHz, high-speed operation beyond 112 Gbit/s with fJ/bit power consumption. In this paper, we review the SOH platform and discuss important devices such as Mach-Zehnder and IQ-modulators based on the linear electro-optic effect. We further show liquid-crystal phase-shifters with a voltage-length product as low as V pi L = 0.06 V.mm and sub-mu W power consumption as required for slow optical switching or tuning optical filters and devices

Silicon optical modulators

Optical technology is poised to revolutionise short reach interconnects. The leading candidate technology is silicon photonics, and the workhorse of such interconnect is the optical modulator. Modulators have been improved dramatically in recent years. Most notably the bandwidth has increased from the MHz to the multi GHz regime in little more than half a decade. However, the demands of optical interconnect are significant, and many questions remain unanswered as to whether silicon can meet the required performance metrics. Minimising metrics such as the energy per bit, and device footprint, whilst maximising bandwidth and modulation depth are non trivial demands. All of this must be achieved with acceptable thermal tolerance and optical spectral width, using CMOS compatible fabrication processes. Here we discuss the techniques that have, and will, be used to implement silicon optical modulators, as well as the outlook for these devices, and the candidate solutions of the future

Co-integration of Ge detectors and Si modulators in an advanced Si photonics platform

A Si photonics platform is described, co-integrating advanced passive components with Si modulators and Ge detectors. This platform is developed on a 200mm CMOS toolset, compatible with a 130nm CMOS baseline. The paper describes the process flow, and describes the performance of selected electro-optical devices to demonstrate the viability of the flow