Self-Calibrated, Low-Jitter and Low-Reference-Spur Injection-Locked Clock Multipliers

Department of Electrical EngineeringThis dissertation focuses primarily on the design of calibrators for the injection-locked clock multiplier (ILCM). ILCMs have advantage to achieve an excellent jitter performance at low cost, in terms of area and power consumption. The wide loop bandwidth (BW) of the injection technique could reject the noise of voltage-controlled oscillator (VCO), making it thus suitable for the rejection of poor noise of a ring-VCO and a high frequency LC-VCO. However, it is difficult to use without calibrators because of its sensitiveness in process-voltage-temperature (PVT) variations. In Chapter 2, conventional frequency calibrators are introduced and discussed. This dissertation introduces two types of calibrators for low-power high-frequency LC-VCO-based ILFMs in Chapter 3 and Chapter 4 and high-performance ring-VCO-based ILCM in Chapter 5. First, Chapter 3 presents a low power and compact area LC-tank-based frequency multiplier. In the proposed architecture, the input signals have a pulsed waveform that involves many high-order harmonics. Using an LC-tank that amplifies only the target harmonic component, while suppressing others, the output signal at the target frequency can be obtained. Since the core current flows for a very short duration, due to the pulsed input signals, the average power consumption can be dramatically reduced. Effective removal of spurious tones due to the damping of the signal is achieved using a limiting amplifier. In this work, a prototype frequency tripler using the proposed architecture was designed in a 65 nm CMOS process. The power consumption was 950 ??W, and the active area was 0.08 mm2. At a 3.12 GHz frequency, the phase noise degradation with respect to the theoretical bound was less than 0.5 dB. Second, Chapter 4 presents an ultra-low-phase-noise ILFM for millimeter wave (mm-wave) fifth-generation (5G) transceivers. Using an ultra-low-power frequency-tracking loop (FTL), the proposed ILFM is able to correct the frequency drifts of the quadrature voltage-controlled oscillator of the ILFM in a real-time fashion. Since the FTL is monitoring the averages of phase deviations rather than detecting or sampling the instantaneous values, it requires only 600??W to continue to calibrate the ILFM that generates an mm-wave signal with an output frequency from 27 to 30 GHz. The proposed ILFM was fabricated in a 65-nm CMOS process. The 10-MHz phase noise of the 29.25-GHz output signal was ???129.7 dBc/Hz, and its variations across temperatures and supply voltages were less than 2 dB. The integrated phase noise from 1 kHz to 100 MHz and the rms jitter were???39.1 dBc and 86 fs, respectively. Third, Chapter 5 presents a low-jitter, low-reference-spur ring voltage-controlled oscillator (ring VCO)-based ILCM. Since the proposed triple-point frequency/phase/slope calibrator (TP-FPSC) can accurately remove the three root causes of the frequency errors of ILCMs (i.e., frequency drift, phase offset, and slope modulation), the ILCM of this work is able to achieve a low-level reference spur. In addition, the calibrating loop for the frequency drift of the TP-FPSC offers an additional suppression to the in-band phase noise of the output signal. This capability of the TP-FPSC and the naturally wide bandwidth of the injection-locking mechanism allows the ILCM to achieve a very low RMS jitter. The ILCM was fabricated in a 65-nm CMOS technology. The measured reference spur and RMS jitter were ???72 dBc and 140 fs, respectively, both of which are the best among the state-of-the-art ILCMs. The active silicon area was 0.055 mm2, and the power consumption was 11.0 mW.clos

LOW-JITTER AND LOW-SPUR RING-OSCILLATOR-BASED PHASE-LOCKED LOOPS

Department of Electrical EngineeringIn recent years, ring-oscillator based clock generators have drawn a lot of attention due to the merits of high area efficiency, potentially wide tuning range, and multi-phase generation. However, the key challenge is how to suppress the poor jitter of ring oscillators. There have been many efforts to develop a ring-oscillator-based clock generator targeting very low-jitter performance. However, it remains difficult for conventional architectures to achieve both low RMS jitter and low levels of reference spurs concurrently while having a high multiplication factor. In this dissertation, a time-domain analysis is presented that provides an intuitive understanding of RMS jitter calculation of the clock generators from their phase-error correction mechanisms. Based on this analysis, we propose new designs of a ring-oscillator-based PLL that addresses the challenges of prior-art ring-based architectures. This dissertation introduces a ring-oscillator-based PLL with the proposed fast phase-error correction (FPEC) technique, which emulates the phase-realignment mechanism of an injection-locked clock multiplier (ILCM). With the FPEC technique, the phase error of the voltage-controlled oscillator (VCO) is quickly removed, achieving ultra-low jitter. In addition, in the transfer function of the proposed architecture, an intrinsic integrator is involved since it is naturally based on a PLL topology. The proposed PLL can thus have low levels of reference spurs while maintaining high stability even for a large multiplication factor. Furthermore, it presents another design of a digital PLL embodying the FPEC technique (or FPEC DPLL). To overcome the problem of a conventional TDC, a low-power optimally-spaced (OS) TDC capable of effectively minimizing the quantization error is presented. In the proposed FPEC DPLL, background digital controllers continuously calibrate the decision thresholds and the gain of the error correction by the loop to be optimal, thus dramatically reducing the quantization error. Since the proposed architecture is implemented in a digital fashion, the variables defining the characteristics of the loop can be easily estimated and calibrated by digital calibrators. As a result, the performances of an ultra-low jitter and the figure-of-merit can be achieved.clos

Millimeter-wave Communication and Radar Sensing — Opportunities, Challenges, and Solutions

With the development of communication and radar sensing technology, people are able to seek for a more convenient life and better experiences. The fifth generation (5G) mobile network provides high speed communication and internet services with a data rate up to several gigabit per second (Gbps). In addition, 5G offers great opportunities of emerging applications, for example, manufacture automation with the help of precise wireless sensing. For future communication and sensing systems, increasing capacity and accuracy is desired, which can be realized at millimeter-wave spectrum from 30 GHz to 300 GHz with several tens of GHz available bandwidth. Wavelength reduces at higher frequency, this implies more compact transceivers and antennas, and high sensing accuracy and imaging resolution. Challenges arise with these application opportunities when it comes to realizing prototype or demonstrators in practice. This thesis proposes some of the solutions addressing such challenges in a laboratory environment.High data rate millimeter-wave transmission experiments have been demonstrated with the help of advanced instrumentations. These demonstrations show the potential of transceiver chipsets. On the other hand, the real-time communication demonstrations are limited to either low modulation order signals or low symbol rate transmissions. The reason for that is the lack of commercially available high-speed analog-to-digital converters (ADCs); therefore, conventional digital synchronization methods are difficult to implement in real-time systems at very high data rates. In this thesis, two synchronous baseband receivers are proposed with carrier recovery subsystems which only require low-speed ADCs [A][B].Besides synchronization, high-frequency signal generation is also a challenge in millimeter-wave communications. The frequency divider is a critical component of a millimeter-wave frequency synthesizer. Having both wide locking range and high working frequencies is a challenge. In this thesis, a tunable delay gated ring oscillator topology is proposed for dual-mode operation and bandwidth extension [C]. Millimeter-wave radar offers advantages for high accuracy sensing. Traditional millimeter-wave radar with frequency-modulated continuous-wave (FMCW), or continuous-wave (CW), all have their disadvantages. Typically, the FMCW radar cannot share the spectrum with other FMCW radars.\ua0 With limited bandwidth, the number of FMCW radars that could coexist in the same area is limited. CW radars have a limited ambiguous distance of a wavelength. In this thesis, a phase-modulated radar with micrometer accuracy is presented [D]. It is applicable in a multi-radar scenario without occupying more bandwidth, and its ambiguous distance is also much larger than the CW radar. Orthogonal frequency-division multiplexing (OFDM) radar has similar properties. However, its traditional fast calculation method, fast Fourier transform (FFT), limits its measurement accuracy. In this thesis, an accuracy enhancement technique is introduced to increase the measurement accuracy up to the micrometer level [E]

Lithium niobate RF-MEMS oscillators for IoT, 5G and beyond

This dissertation focuses on the design and implementation of lithium niobate (LiNbO3) radiofrequency microelectromechanical (RF-MEMS) oscillators for internet-of-things (IoT), 5G and beyond. The dissertation focuses on solving two main problems found nowadays in most of the published works: the narrow tuning range and the low operating frequency (sub 3 GHz) acoustic oscillators currently deliver. The work introduced here enables wideband voltage-controlled MEMS oscillators (VCMOs) needed for emerging applications in IoT. Moreover, it enables multi-GHz (above 8 GHz) RF-MEMS oscillators through harnessing over mode resonances for 5G and beyond. LiNbO3 resonators characterized by high-quality factor (Q), high electromechanical coupling (kt2), and high figure-of-merit (FoMRES= Q kt2) are crucial for building the envisioned high-performance oscillators. Those oscillators can be enabled with lower power consumption, wider tuning ranges, and a higher frequency of oscillation when compared to other state-of-the-art (SoA) RF-MEMS oscillators. Tackling the tuning range issue, the first VCMO based on the heterogeneous integration of a high Q LiNbO3 RF-MEMS resonator and complementary metal-oxide semiconductor (CMOS) is demonstrated in this dissertation. A LiNbO3 resonator array with a series resonance of 171.1 MHz, a Q of 410, and a kt2 of 12.7% is adopted, while the TSMC 65 nm RF LP CMOS technology is used to implement the active circuitry with an active area of 220×70 µm2. Frequency tuning of the VCMO is achieved by programming a binary-weighted digital capacitor bank and a varactor that are both connected in series to the resonator. The measured best phase noise performances of the VCMO are -72 and -153 dBc/Hz at 1 kHz and 10 MHz offsets from 178.23 and 175.83 MHz carriers, respectively. The VCMO consumes a direct current (DC) of 60 µA from a 1.2 V supply while realizing a tuning range of 2.4 MHz (~ 1.4% tuning range). Such VCMOs can be applied to enable ultralow-power, low phase noise, and wideband RF synthesis for emerging applications in IoT. Moreover, the first VCMO based on LiNbO3 lateral overtone bulk acoustic resonator (LOBAR) is demonstrated in this dissertation. The LOBAR excites over 30 resonant modes in the range of 100 to 800 MHz with a frequency spacing of 20 MHz. The VCMO consists of a LOBAR in a closed-loop with two amplification stages and a varactor-embedded tunable LC tank. By the bias voltage applied to the varactor, the tank can be tuned to change the closed-loop gain and phase responses of the oscillator so that Barkhausen’s conditions are satisfied for the targeted resonant mode. The tank is designed to allow the proposed VCMO to lock to any of the ten overtones ranging from 300 to 500 MHz. These ten tones are characterized by average Qs of 2100, kt2 of 1.5%, FoMRES of 31.5 enabling low phase noise, and low-power oscillators crucial for IoT. Owing to the high Qs of the LiNbO3 LOBAR, the measured VCMO shows a close-in phase noise of -100 dBc/Hz at 1 kHz offset from a 300 MHz carrier and a noise floor of -153 dBc/Hz while consuming 9 mW. With further optimization, this VCMO can lead to direct RF synthesis for ultra-low-power transceivers in multi-mode IoT nodes. Tackling the multi-GHz operation problem, the first Ku-band RF-MEMS oscillator utilizing a third antisymmetric overtone (A3) in a LiNbO3 resonator is presented in the dissertation. Quarter-wave resonators are used to satisfy Barkhausen’s oscillation conditions for the 3rd overtone while suppressing the fundamental and higher-order resonances. The oscillator achieves measured phase noise of -70 and -111 dBc/Hz at 1 kHz and 100 kHz offsets from a 12.9 GHz carrier while consuming 20 mW of dc power. The oscillator achieves a FoMOSC of 200 dB at 100 kHz offset. The achieved oscillation frequency is the highest reported to date for a MEMS oscillator. In addition, this dissertation introduces the first X-band RF-MEMS oscillator built using CMOS technology. The oscillator consists of an acoustic resonator in a closed loop with cascaded RF tuned amplifiers (TAs) built on TSMC RF GP 65 nm CMOS. The TAs bandpass response, set by on-chip inductors, satisfies Barkhausen's oscillation conditions for A3 only. Two circuit variations are implemented. The first is an 8.6 GHz standalone oscillator with a source-follower buffer for direct 50 Ω-based measurements. The second is an oscillator-divider chain using an on-chip 3-stage divide-by-2 frequency divider for a ~1.1 GHz output. The standalone oscillator achieves measured phase noise of -56, -113, and -135 dBc/Hz at 1 kHz, 100 kHz, and 1 MHz offsets from an 8.6 GHz output while consuming 10.2 mW of dc power. The oscillator also attains a FoMOSC of 201.6 dB at 100 kHz offset, surpassing the SoA electromagnetic (EM) and RF-MEMS based oscillators. The oscillator-divider chain produces a phase noise of -69.4 and -147 dBc/Hz at 1 kHz and 1 MHz offsets from a 1075 MHz output while consuming 12 mW of dc power. Its phase noise performance also surpasses the SoA L-band phase-locked loops (PLLs). The demonstrated performance shows the strong potential of microwave acoustic oscillators for 5G frequency synthesis and beyond. This work will enable low-power 5G transceivers featuring high speed, high sensitivity, and high selectivity in small form factors

High Data-Rate, Battery-Free, Active Millimeter-Wave Identification Technologies for Future Integrated Sensing, Tracking, and Communication Systems-On-Chip

RÉSUMÉ Pour de nombreuses applications allant de la sécurité, le contrôle d'accès, la surveillance et la gestion de la chaîne d'approvisionnement aux applications biomédicales et d'imagerie parmi tant d'autres, l'identification par radiofréquence (RFID) a énormément influencé notre quotidien. Jusqu'à présent, cette technologie émergente a été la plupart du temps conçue et développé dans les basses fréquences (en dessous de 3 GHz). D’une part, pour des applications où de courte distances (quelques centimètres) et à faible taux de communications de données sont suffisantes (même préférables dans certains cas), la technologie RFID à couplage inductif qui fonctionne à basse fréquences (LF) ou à haute fréquences (HF) fonctionne très bien et elle est largement utilisée dans de nombreuses applications commerciales. D'autre part, afin d’augmenter la distance de communication (quelques mètres), le débit de données de communication, et ainsi minimiser la taille du tag, la technologie RFID fonctionnant dans la bande d’ultra-haute fréquence (UHF) et aux fréquences micro-ondes (par exemple, 2.4 GHz) a récemment attiré beaucoup d'attention dans le milieu de la recherche et le développement. Cependant, dans ces bandes de fréquences, une bande passante disponible restreinte avec la taille du tag assez large (principalement dominée par la taille d'antenne et de la batterie dans le cas d'un tag actif) sont les principaux facteurs qui ont toujours limité l'évolution de la technologie RFID actuelle. En effet, propulser la technologie RFID dans la bande de fréquences à ondes millimétriques briserait les barrières actuelles de la technologie RFID. La technologie d’identification aux fréquences à ondes millimétriques (MMID) offre plus de bande passante, et permet également la miniaturisation de la taille du tag, car à ces bandes de fréquences, la longueur d’onde est de l’ordre de quelques millimètres, une taille comparable à la taille d’un circuit intégré. L'antenne peut donc être soit intégré sur la même puce (antenne sur puce) ou soit encapsulé dans le même boitier que le circuit intégré. En dotant le tag la capacité de récolter sans fil son énergie à partir d'un signal aux fréquences à ondes millimétriques provenant du lecteur, lui fournissant ainsi l'autonomie énergétique (ainsi éliminant la nécessité d'une batterie et en même temps permettant la miniaturisation du tag), il devient alors possible d'intégrer entièrement tout le tag MMID sur une seule puce y compris les antennes, ce qui aboutira à la mise au point d’une nouvelle technologie miniature (μRFID) fonctionnant à la bande de fréquences à ondes millimétriques.----------ABSTRACT For countless applications ranging from security, access control, monitoring, and supply chain management to biomedical and imaging applications among many others, radio frequency identification (RFID) technology has tremendously impacted our daily life. So far, this ever-needed and emerging technology has been mostly designed and developed at low RF frequencies (below 3-GHz). For many practical applications where short-range (few centimeters) and low data-rate communications are sufficient and in some cases even preferable, inductively coupled RFID systems that operate over either low-frequency (LF) or high-frequency (HF) bands have performed quite well and have been widely used for practical and commercial applications. On the other hand, in the quest for a longer communication range (few meters), relatively high data-rate and smaller antenna size RFID systems operating over ultra-high frequency (UHF) and microwave frequency bands (e.g., 2.4-GHz) have recently attracted much attention in the research and development community. However, over these RF bands, a restricted available bandwidth together with an undesired tag size (mainly dominated by its off-chip antenna size and battery in the case of active tag) are the main factors that have been limiting the evolution of today’s RFID technology. Indeed, propelling RFID technology into millimeter-wave frequencies opens up new applications that cannot be made possible today.Millimeter-wave identification (MMID) technology is set out to exploit significantly larger bandwidth and smaller antenna size. Over these frequency bands, an effective wavelength is in the order of a few millimeters, hence close to a typical semiconductor (CMOS) die size. The antenna, therefore, may either be integrated on the same chip (antenna-on-chip – AoC) or embedded in the related package (antenna-in-package – AiP). In addition, by equipping the tag with the capability to wirelessly harvest its energy from an incoming millimeter-wave signal, thereby providing energy autonomy without the need of a battery and at the same time allowing miniaturization, it becomes possible to integrate the entire MMID tag circuitry on a single chip. Furthermore, the timely MMID concept is fully compatible with upcoming and future applications of millimeter-wave technology in wireless communications which are being discussed and developed worldwide in research and development communities, such as the internet of things (IoT), 5G, autonomous mobility, μSmart sensors, automotive RADAR technologies, etc

Analysis and Design of Energy Efficient Frequency Synthesizers for Wireless Integrated Systems

Advances in ultra-low power (ULP) circuit technologies are expanding the IoT applications in our daily life. However, wireless connectivity, small form factor and long lifetime are still the key constraints for many envisioned wearable, implantable and maintenance-free monitoring systems to be practically deployed at a large scale. The frequency synthesizer is one of the most power hungry and complicated blocks that not only constraints RF performance but also offers subtle scalability with power as well. Furthermore, the only indispensable off-chip component, the crystal oscillator, is also associated with the frequency synthesizer as a reference. This thesis addresses the above issues by analyzing how phase noise of the LO affect the frequency modulated wireless system in different aspects and how different noise sources in the PLL affect the performance. Several chip prototypes have been demonstrated including: 1) An ULP FSK transmitter with SAR assisted FLL; 2) A ring oscillator based all-digital BLE transmitter utilizing a quarter RF frequency LO and 4X frequency multiplier; and 3) An XO-less BLE transmitter with an RF reference recovery receiver. The first 2 designs deal with noise sources in the PLL loop for ultimate power and cost reduction, while the third design deals with the reference noise outside the PLL and explores a way to replace the XO in ULP wireless edge nodes. And at last, a comprehensive PN theory is proposed as the design guideline.PHDElectrical EngineeringUniversity of Michigan, Horace H. Rackham School of Graduate Studieshttps://deepblue.lib.umich.edu/bitstream/2027.42/153420/1/chenxing_1.pd

Design of Power-Efficient Optical Transceivers and Design of High-Linearity Wireless Wideband Receivers

The combination of silicon photonics and advanced heterogeneous integration is promising for next-generation disaggregated data centers that demand large scale, high throughput, and low power. In this dissertation, we discuss the design and theory of power-efficient optical transceivers with System-in-Package (SiP) 2.5D integration. Combining prior arts and proposed circuit techniques, a receiver chip and a transmitter chip including two 10 Gb/s data channels and one 2.5 GHz clocking channel are designed and implemented in 28 nm CMOS technology. An innovative transimpedance amplifier (TIA) and a single-ended to differential (S2D) converter are proposed and analyzed for a low-voltage high-sensitivity receiver; a four-to-one serializer, programmable output drivers, AC coupling units, and custom pads are implemented in a low-power transmitter; an improved quadrature locked loop (QLL) is employed to generate accurate quadrature clocks. In addition, we present an analysis for inverter-based shunt-feedback TIA to explicitly depict the trade-off among sensitivity, data rate, and power consumption. At last, the research on CDR-based​ clocking schemes for optical links is also discussed. We introduce prior arts and propose a power-efficient clocking scheme based on an injection-locked phase rotator. Next, we analyze injection-locked ring oscillators (ILROs) that have been widely used for quadrature clock generators (QCGs) in multi-lane optical or wireline transceivers due to their low power, low area, and technology scalability. The asymmetrical or partial injection locking from 2 phases to 4 phases results in imbalances in amplitude and phase. We propose a modified frequency-domain analysis to provide intuitive insight into the performance design trade-offs. The analysis is validated by comparing analytical predictions with simulations for an ILRO-based QCG in 28 nm CMOS technology. This dissertation also discusses the design of high-linearity wireless wideband receivers. An out-of-band (OB) IM3 cancellation technique is proposed and analyzed. By exploiting a baseband auxiliary path (AP) with a high-pass feature, the in-band (IB) desired signal and out-of-band interferers are split. OB third-order intermodulation products (IM3) are reconstructed in the AP and cancelled in the baseband (BB). A 0.5-2.5 GHz frequency-translational noise-cancelling (FTNC) receiver is implemented in 65nm CMOS to demonstrate the proposed approach. It consumes 36 mW without cancellation at 1 GHz LO frequency and 1.2 V supply, and it achieves 8.8 MHz baseband bandwidth, 40dB gain, 3.3dB NF, 5dBm OB IIP3, and −6.5dBm OB B1dB. After IM3 cancellation, the effective OB-IIP3 increases to 32.5 dBm with an extra 34 mW for narrow-band interferers (two tones). For wideband interferers, 18.8 dB cancellation is demonstrated over 10 MHz with two −15 dBm modulated interferers. The local oscillator (LO) leakage is −92 dBm and −88 dB at 1 GHz and 2 GHz LO respectively. In summary, this technique achieves both high OB linearity and good LO isolation