Process techniques study of integrated circuits Final scientific report

Surface impurity and structural defect analysis on thermally grown silicon oxide integrated circui

Reliability Analysis of Hafnium Oxide Dielectric Based Nanoelectronics

With the physical dimensions ever scaling down, the increasing level of sophistication in nano-electronics requires a comprehensive and multidisciplinary reliability investigation. A kind of nano-devices, HfO2-based high-k dielectric films, are studied in the statistical aspect of reliability as well as electrical and physical aspects of reliability characterization, including charge trapping and degradation mechanisms, breakdown modes and bathtub failure rate estimation. This research characterizes charge trapping and investigates degradation mechanisms in high-k dielectrics. Positive charges trapped in both bulk and interface contribute to the interface state generation and flat band voltage shift when electrons are injected from the gate under a negative gate bias condition.A negligible number of defects are generated until the stress voltage increases to a certain level. As results of hot electrons and positive charges trapped in the interface region, the difference in the breakdown sequence is attributed to the physical thickness of the bulk high-k layer and the structure of the interface layer. Time-to-breakdown data collected in the accelerated life tests are modeled with a bathtub failure rate curve by a 3-step Bayesian approach. Rather than individually considering each stress level in accelerating life tests (ALT), this approach derives the change point and the priors for Bayesian analysis from the time-to-failure data under neighborhood stresses, based on the relationship between the lifetime and stress voltage. This method can provide a fast and reliable estimation of failure rate for burn-in optimization when only a small sample of data is available

Feature Papers in Electronic Materials Section

This book entitled "Feature Papers in Electronic Materials Section" is a collection of selected papers recently published on the journal Materials, focusing on the latest advances in electronic materials and devices in different fields (e.g., power- and high-frequency electronics, optoelectronic devices, detectors, etc.). In the first part of the book, many articles are dedicated to wide band gap semiconductors (e.g., SiC, GaN, Ga2O3, diamond), focusing on the current relevant materials and devices technology issues. The second part of the book is a miscellaneous of other electronics materials for various applications, including two-dimensional materials for optoelectronic and high-frequency devices. Finally, some recent advances in materials and flexible sensors for bioelectronics and medical applications are presented at the end of the book

Conference of Microelectronics Research 2000

https://scholarworks.rit.edu/meec_archive/1009/thumbnail.jp

Artificial olfactory system for multi-component analysis of gas mixtures.

Gas analysis is an important part of our world and gas sensing technology is becoming more essential for various aspects of our life. A novel approach for gas mixture analysis by using portable gas chromatography in combination with an array of highly integrated and selective metal oxide (MOX) sensors has been studied. We developed a system with small size (7 x 13 x 16 inches), low power consumption (~10 W) and absence of special carrier gases designed for portable field analysis (assuming apriori calibration). Low ppb and even sub-ppb level of detection for some VOCs was achieved during the analysis of 50 ml of gas samples. A detailed description of our innovative design of multi-sensory platforms based on MOX sensors for multidimensional portable gas chromatography is provided in detail in this work. As a part of this effort, we successfully synthesized nanocomposite gas sensors based on SnO2 for selective detection of hydrogen sulfide, mercaptans, alcohols, ketones and heavy hydrocarbons. The morphology of the prepared sensors was closely studied by scanning electron microscopy (SEM), atomic force microscopy (AFM), transition electron microscopy (TEM) and X-Ray diffraction (XRD). Optical and electrical properties of polycrystalline SnO2 were investigated by using UV-Vis spectroscopy, transmission line measurement (TLM) and four probe resistance measurement techniques. Furthermore, more advanced gas sensing performance for detection of benzene, toluene, ethylbenzene, and O-xylene (BTEX) of polycrystalline SnO2 film (30 nm) coated with bimetal Au:Pd (9:1 molar ratio) nanoclusters was measured. Finally, besides the experimental result, the theoretical validation of the detector’s performance was provided based on high catalytic activity of nanocomposite materials and its superior electronic structure for gas detection compared to the polycrystalline SnO2. The theoretical background of gas chemisorption process at the surface of polycrystalline SnO2 was reviewed in this work. Furthermore, one dimensional Poisson equation relates surface energy states ( and ) and the bulk electronic structure ( and ) of polycrystalline SnO2. The main theory of electronic processes on the surface of semiconductors during the gas chemisorption was further applied in a case of nanocomposite materials