Reconfigurable Receiver Front-Ends for Advanced Telecommunication Technologies

The exponential growth of converging technologies, including augmented reality, autonomous vehicles, machine-to-machine and machine-to-human interactions, biomedical and environmental sensory systems, and artificial intelligence, is driving the need for robust infrastructural systems capable of handling vast data volumes between end users and service providers. This demand has prompted a significant evolution in wireless communication, with 5G and subsequent generations requiring exponentially improved spectral and energy efficiency compared to their predecessors. Achieving this entails intricate strategies such as advanced digital modulations, broader channel bandwidths, complex spectrum sharing, and carrier aggregation scenarios. A particularly challenging aspect arises in the form of non-contiguous aggregation of up to six carrier components across the frequency range 1 (FR1). This necessitates receiver front-ends to effectively reject out-of-band (OOB) interferences while maintaining high-performance in-band (IB) operation. Reconfigurability becomes pivotal in such dynamic environments, where frequency resource allocation, signal strength, and interference levels continuously change. Software-defined radios (SDRs) and cognitive radios (CRs) emerge as solutions, with direct RF-sampling receivers offering a suitable architecture in which the frequency translation is entirely performed in digital domain to avoid analog mixing issues. Moreover, direct RF- sampling receivers facilitate spectrum observation, which is crucial to identify free zones, and detect interferences. Acoustic and distributed filters offer impressive dynamic range and sharp roll off characteristics, but their bulkiness and lack of electronic adjustment capabilities limit their practicality. Active filters, on the other hand, present opportunities for integration in advanced CMOS technology, addressing size constraints and providing versatile programmability. However, concerns about power consumption, noise generation, and linearity in active filters require careful consideration.This thesis primarily focuses on the design and implementation of a low-voltage, low-power RFFE tailored for direct sampling receivers in 5G FR1 applications. The RFFE consists of a balun low-noise amplifier (LNA), a Q-enhanced filter, and a programmable gain amplifier (PGA). The balun-LNA employs noise cancellation, current reuse, and gm boosting for wideband gain and input impedance matching. Leveraging FD-SOI technology allows for programmable gain and linearity via body biasing. The LNA's operational state ranges between high-performance and high-tolerance modes, which are apt for sensitivityand blocking tests, respectively. The Q-enhanced filter adopts noise-cancelling, current-reuse, and programmable Gm-cells to realize a fourth-order response using two resonators. The fourth-order filter response is achieved by subtracting the individual response of these resonators. Compared to cascaded and magnetically coupled fourth-order filters, this technique maintains the large dynamic range of second-order resonators. Fabricated in 22-nm FD-SOI technology, the RFFE achieves 1%-40% fractional bandwidth (FBW) adjustability from 1.7 GHz to 6.4 GHz, 4.6 dB noise figure (NF) and an OOB third-order intermodulation intercept point (IIP3) of 22 dBm. Furthermore, concerning the implementation uncertainties and potential variations of temperature and supply voltage, design margins have been considered and a hybrid calibration scheme is introduced. A combination of on-chip and off-chip calibration based on noise response is employed to effectively adjust the quality factors, Gm-cells, and resonance frequencies, ensuring desired bandpass response. To optimize and accelerate the calibration process, a reinforcement learning (RL) agent is used.Anticipating future trends, the concept of the Q-enhanced filter extends to a multiple-mode filter for 6G upper mid-band applications. Covering the frequency range from 8 to 20 GHz, this RFFE can be configured as a fourth-order dual-band filter, two bandpass filters (BPFs) with an OOB notch, or a BPF with an IB notch. In cognitive radios, the filter’s transmission zeros can be positioned with respect to the carrier frequencies of interfering signals to yield over 50 dB blocker rejection

Built-in-self-test of RF front-end circuitry

Fuelled by the ever increasing demand for wireless products and the advent of deep submicron CMOS, RF ICs have become fairly commonplace in the semiconductor market. This has given rise to a new breed of Systems-On-Chip (SOCs) with RF front-ends tightly integrated along with digital, analog and mixed signal circuitry. However, the reliability of the integrated RF front-end continues to be a matter of significant concern and considerable research. A major challenge to the reliability of RF ICs is the fact that their performance is also severely degraded by wide tolerances in on-chip passives and package parasitics, in addition to process related faults. Due to the absence of contact based testing solutions in embedded RF SOCs (because the very act of probing may affect the performance of the RF circuit), coupled with the presence of very few test access nodes, a Built In Self Test approach (BiST) may prove to be the most efficient test scheme. However due to the associated challenges, a comprehensive and low-overhead BiST methodology for on-chip testing of RF ICs has not yet been reported in literature. In the current work, an approach to RF self-test that has hitherto been unexplored both in literature and in the commercial arena is proposed. A sensitive current monitor has been used to extract variations in the supply current drawn by the circuit-under-test (CUT). These variations are then processed in time and frequency domain to develop signatures. The acquired signatures can then be mapped to specific behavioral anomalies and the locations of these anomalies. The CUT is first excited by simple test inputs that can be generated on-chip. The current monitor extracts the corresponding variations in the supply current of the CUT, thereby creating signatures that map to various performance metrics of the circuit. These signatures can then be post-processed by low overhead on-chip circuitry and converted into an accessible form. To be successful in the RF domain any BIST architecture must be minimally invasive, reliable, offer good fault coverage and present low real estate and power overheads. The current-based self-test approach successfully addresses all these concerns. The technique has been applied to RF Low Noise Amplifiers, Mixers and Voltage Controlled Oscillators. The circuitry and post-processing techniques have also been demonstrated in silicon (using the IBM 0.25 micron RF CMOS process). The entire self-test of the RF front-end can be accomplished with a total test time of approximately 30µs, which is several orders of magnitude better than existing commercial test schemes

CURRENT REUSE ACTIVE INDUCTOR BASED WIDEBAND LNA

This paper presents the design of an active inductor based wideband LNA using current reuse topology,which is designed and simulated in 0.18um CMOS technology. The low noise amplifier is considered to be the key block in an RF receiver. It plays a critical role in determining the noise figure of a receiver. The main function of an LNA is to provide sufficient gain to reduce the noise of subsequent stages while adding as little noise as possible. To achieve a good impedance matching over a desire bandwidth (0.05GHz to1.5GHz) active inductor is implemented based on gyrator structure and its noise is improved by employing a feed-forward path (FFP). The simulations show a maximum power gain of 17.32dB, minimum noise figure (NF) of 0.87dB with a 3db bandwidth of 1.0GHz over 0.05-1.5 GHz range. The total power consumption is 6.38mW with 1.8V power supply

Discrete-Time Chaotic-Map Truly Random Number Generators: Design, Implementation, and Variability Analysis of the Zigzag Map

In this paper, we introduce a novel discrete chaotic map named zigzag map that demonstrates excellent chaotic behaviors and can be utilized in Truly Random Number Generators (TRNGs). We comprehensively investigate the map and explore its critical chaotic characteristics and parameters. We further present two circuit implementations for the zigzag map based on the switched current technique as well as the current-mode affine interpolation of the breakpoints. In practice, implementation variations can deteriorate the quality of the output sequence as a result of variation of the chaotic map parameters. In order to quantify the impact of variations on the map performance, we model the variations using a combination of theoretical analysis and Monte-Carlo simulations on the circuits. We demonstrate that even in the presence of the map variations, a TRNG based on the zigzag map passes all of the NIST 800-22 statistical randomness tests using simple post processing of the output data.Comment: To appear in Analog Integrated Circuits and Signal Processing (ALOG

BiCMOS Millimetre-wave low-noise amplifier

Abstract: Please refer to full text to view abstract.D.Phil. (Electrical and Electronic Engineering

Characterization of 28 nm FDSOI MOS and application to the design of a low-power 2.4 GHz LNA

IoT is expected to connect billions of devices all over world in the next years, and in a near future, it is expected to use LR-WPAN in a wide variety of applications. Not all the devices will require of high performance but will require of low power hungry systems since most of them will be powered with a battery. Conventional CMOS technologies cannot cover these needs even scaling it to very small regimes, which appear other problems. Hence, new technologies are emerging to cover the needs of this devices. One promising technology is the UTBB FDSOI, which achieves good performance with very good energy efficiency. This project characterizes this technology to obtain a set of parameters of interest for analog/RF design. Finally, with the help of a low-power design methodology (gm/Id approach), a design of an ULP ULV LNA is performed to check the suitability of this technology for IoT

Blocker Tolerant Radio Architectures

Future radio platforms have to be inexpensive and deal with a variety of co- existence issues. The technology trend during the last few years is towards system- on-chip (SoC) that is able to process multiple standards re-using most of the digital resources. A major bottle-neck to this approach is the co-existence of these standards operating at different frequency bands that are hitting the receiver front-end. So the current research is focused on the power, area and performance optimization of various circuit building blocks of a radio for current and incoming standards. Firstly, a linearization technique for low noise amplifiers (LNAs) called, Robust Derivative Superposition (RDS) method is proposed. RDS technique is insensitive to Process Voltage and Temperature (P.V.T.) variations and is validated with two low noise transconductance amplifier (LNTA) designs in 0.18µm CMOS technology. Measurement results from 5 dies of a resistive terminated LNTA shows that the pro- posed method improves IM3 over 20dB for input power up to -18dBm, and improves IIP_(3) by 10dB. A 2V inductor-less broadband 0.3 to 2.8GHz balun-LNTA employing the proposed RDS linearization technique was designed and measured. It achieves noise figure of 6.5dB, IIP3 of 16.8dBm, and P1dB of 0.5dBm having a power consumption of 14.2mW. The balun LNTA occupies an active area of 0.06mm2. Secondly, the design of two high linearity, inductor-less, broadband LNTAs employing noise and distortion cancellation techniques is presented. Main design issues and the performance trade-offs of the circuits are discussed. In the fully differential architecture, the first LNTA covers 0.1-2GHz bandwidth and achieves a minimum noise figure (NFmin) of 3dB, IIP_(3) of 10dBm and a P_(1dB) of 0dBm while dissipating 30.2mW. The 2^(nd) low power bulk driven LNTA with 16mW power consumption achieves NFmin of 3.4dB, IIP3 of 11dBm and 0.1-3GHz bandwidth. Each LNTA occupy an active area of 0.06mm2 in 45nm CMOS. Thirdly, a continuous-time low-pass ∆ΣADC equipped with design techniques to provide robustness against loop saturation due to blockers is presented. Loop over- load detection and correction is employed to improve the ADC’s tolerance to blockers; a fast overload detector activates the input attenuator, maintaining the ADC in linear operation. To further improve ADC’s blocker tolerance, a minimally-invasive integrated low-pass filter that reduces the most critical adjacent/alternate channel blockers is implemented. An ADC prototype is implemented in a 90nm CMOS technology and experimentally it achieves 69dB dynamic range over a 20MHz bandwidth with a sampling frequency of 500MHz and 17.1mW of power consumption. The alternate channel blocker tolerance at the most critical frequency is as high as -5.5dBFS while the conventional feed-forward modulator becomes unstable at -23.5dBFS of blocker power. The proposed blocker rejection techniques are minimally-invasive and take less than 0.3µsec to settle after a strong agile blocker appears. Finally, a new radio partitioning methodology that gives robust analog and mixed signal radio development in scaled technology for SoC integration, and the co-design of RF FEM-antenna system is presented. Based on the proposed methodology, a CMOS RF front-end module (FEM) with power amplifier (PA), LNA and transmit/receive switch, co-designed with antenna is implemented. The RF FEM circuit is implemented in a 32nm CMOS technology. Post extracted simulations show a noise figure < 2.5dB, S_(21) of 14dB, IIP3 of 7dBm and P1dB of -8dBm for the receiver. Total power consumption of the receiver is 11.8mW from a 1V supply. On the trans- mitter side, PA achieves peak RF output power of 22.34dBm with peak power added efficiency (PAE) of 65% and PAE of 33% with linearization at -6dB power back off. Simulations show an efficiency of 80% for the miniaturized dipole antenna

Flexible Receivers in CMOS for Wireless Communication

Consumers are pushing for higher data rates to support more services that are introduced in mobile applications. As an example, a few years ago video-on-demand was only accessed through landlines, but today wireless devices are frequently used to stream video. To support this, more flexible network solutions have merged in 4G, introducing new technical problems to the mobile terminal. New techniques are thus needed, and this dissertation explores five different ideas for receiver front-ends, that are cost-efficient and flexible both in performance and operating frequency. All ideas have been implemented in chips fabricated in 65 nm CMOS technology and verified by measurements. Paper I explores a voltage-mode receiver front-end where sub-threshold positive feedback transistors are introduced to increase the linearity in combination with a bootstrapped passive mixer. Paper II builds on the idea of 8-phase harmonic rejection, but simplifies it to a 6-phase solution that can reject noise and interferers at the 3rd order harmonic of the local oscillator frequency. This provides a good trade-off between the traditional quadrature mixer and the 8- phase harmonic rejection mixer. Furthermore, a very compact inductor-less low noise amplifier is introduced. Paper III investigates the use of global negative feedback in a receiver front-end, and also introduces an auxiliary path that can cancel noise from the main path. In paper IV, another global feedback based receiver front-end is designed, but with positive feedback instead of negative. By introducing global positive feedback, the resistance of the transistors in a passive mixer-first receiver front-end can be reduced to achieve a lower noise figure, while still maintaining input matching. Finally, paper V introduces a full receiver chain with a single-ended to differential LNA, current-mode downconversion mixers, and a baseband circuity that merges the functionalities of the transimpedance amplifier, channel-select filter, and analog-to-digital converter into one single power-efficient block

SiGe BiCMOS RF front-ends for adaptive wideband receivers

The pursuit of dense monolithic integration and higher operating speed continues to push the integrated circuit (IC) fabrication technologies to their limits. The increasing process variation, associated with aggressive technology scaling, is having a negative impact on circuit yield in current IC technologies, and the problem is likely to become worse in the future. Circuit solutions that are more tolerant of the process variations are needed to fully utilize the benefits of technology scaling. The primary goal of this research is to develop high-frequency circuits that can deliver consistent performance even under the threat of increasing process variation. These circuits can be used to build ``self-healing" systems, which can detect process imperfections and compensate accordingly to optimize performance. In addition to improving yield, such adaptive circuits and systems can provide more robust and efficient solutions for a wide range of applications under varying operational and environmental conditions.Silicon-germanium (SiGe) BiCMOS technology is an ideal platform for highly integrated systems requiring both high-performance analog and radio-frequency (RF) circuits as well as large-scale digital functionality. This research is focused on designing circuit components for a high-frequency wideband self-healing receiver in SiGe BiCMOS technology. An adaptive image-reject mixer, low insertion-loss switches, a wideband low-noise amplifier (LNA), and a SiGe complementary LC oscillator were designed. Healing algorithms were developed, and automated self-healing of multiple parameters of the mixer was demonstrated in measurement. A monte-carlo simulation based methodology was developed to verify the effectiveness of the healing procedure. In summary, this research developed circuits, algorithms, simulation tools, and methods that are useful for building "self-healing" systems.Ph.D