7,893 research outputs found
A 3D Framework for Characterizing Microstructure Evolution of Li-Ion Batteries
Lithium-ion batteries are commonly found in many modern consumer devices, ranging from portable computers and mobile phones to hybrid- and fully-electric vehicles. While improving efficiencies and increasing reliabilities are of critical importance for increasing market adoption of the technology, research on these topics is, to date, largely restricted to empirical observations and computational simulations. In the present study, it is proposed to use the modern technique of X-ray microscopy to characterize a sample of commercial 18650 cylindrical Li-ion batteries in both their pristine and aged states. By coupling this approach with 3D and 4D data analysis techniques, the present study aimed to create a research framework for characterizing the microstructure evolution leading to capacity fade in a commercial battery. The results indicated the unique capabilities of the microscopy technique to observe the evolution of these batteries under aging conditions, successfully developing a workflow for future research studies
Statistical Characterization and Decomposition of SRAM cell Variability and Aging
abstract: Memories play an integral role in today's advanced ICs. Technology scaling has enabled high density designs at the price paid for impact due to variability and reliability. It is imperative to have accurate methods to measure and extract the variability in the SRAM cell to produce accurate reliability projections for future technologies. This work presents a novel test measurement and extraction technique which is non-invasive to the actual operation of the SRAM memory array. The salient features of this work include i) A single ended SRAM test structure with no disturbance to SRAM operations ii) a convenient test procedure that only requires quasi-static control of external voltages iii) non-iterative method that extracts the VTH variation of each transistor from eight independent switch point measurements. With the present day technology scaling, in addition to the variability with the process, there is also the impact of other aging mechanisms which become dominant. The various aging mechanisms like Negative Bias Temperature Instability (NBTI), Channel Hot Carrier (CHC) and Time Dependent Dielectric Breakdown (TDDB) are critical in the present day nano-scale technology nodes. In this work, we focus on the impact of NBTI due to aging in the SRAM cell and have used Trapping/De-Trapping theory based log(t) model to explain the shift in threshold voltage VTH. The aging section focuses on the following i) Impact of Statistical aging in PMOS device due to NBTI dominates the temporal shift of SRAM cell ii) Besides static variations , shifting in VTH demands increased guard-banding margins in design stage iii) Aging statistics remain constant during the shift, presenting a secondary effect in aging prediction. iv) We have investigated to see if the aging mechanism can be used as a compensation technique to reduce mismatch due to process variations. Finally, the entire test setup has been tested in SPICE and also validated with silicon and the results are presented. The method also facilitates the study of design metrics such as static, read and write noise margins and also the data retention voltage and thus help designers to improve the cell stability of SRAM.Dissertation/ThesisM.S. Electrical Engineering 201
Cross-Layer Optimization for Power-Efficient and Robust Digital Circuits and Systems
With the increasing digital services demand, performance and power-efficiency
become vital requirements for digital circuits and systems. However, the
enabling CMOS technology scaling has been facing significant challenges of
device uncertainties, such as process, voltage, and temperature variations. To
ensure system reliability, worst-case corner assumptions are usually made in
each design level. However, the over-pessimistic worst-case margin leads to
unnecessary power waste and performance loss as high as 2.2x. Since
optimizations are traditionally confined to each specific level, those safe
margins can hardly be properly exploited.
To tackle the challenge, it is therefore advised in this Ph.D. thesis to
perform a cross-layer optimization for digital signal processing circuits and
systems, to achieve a global balance of power consumption and output quality.
To conclude, the traditional over-pessimistic worst-case approach leads to
huge power waste. In contrast, the adaptive voltage scaling approach saves
power (25% for the CORDIC application) by providing a just-needed supply
voltage. The power saving is maximized (46% for CORDIC) when a more aggressive
voltage over-scaling scheme is applied. These sparsely occurred circuit errors
produced by aggressive voltage over-scaling are mitigated by higher level error
resilient designs. For functions like FFT and CORDIC, smart error mitigation
schemes were proposed to enhance reliability (soft-errors and timing-errors,
respectively). Applications like Massive MIMO systems are robust against lower
level errors, thanks to the intrinsically redundant antennas. This property
makes it applicable to embrace digital hardware that trades quality for power
savings.Comment: 190 page
Voyager electronic parts radiation program, volume 1
The Voyager spacecraft is subject to radiation from external natural space, from radioisotope thermoelectric generators and heater units, and from the internal environment where penetrating electrons generate surface ionization effects in semiconductor devices. Methods for radiation hardening and tests for radiation sensitivity are described. Results of characterization testing and sample screening of over 200 semiconductor devices in a radiation environment are summarized
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