Analog/RF Circuit Design Techniques for Nanometerscale IC Technologies

CMOS evolution introduces several problems in analog design. Gate-leakage mismatch exceeds conventional matching tolerances requiring active cancellation techniques or alternative architectures. One strategy to deal with the use of lower supply voltages is to operate critical parts at higher supply voltages, by exploiting combinations of thin- and thick-oxide transistors. Alternatively, low voltage circuit techniques are successfully developed. In order to benefit from nanometer scale CMOS technology, more functionality is shifted to the digital domain, including parts of the RF circuits. At the same time, analog control for digital and digital control for analog emerges to deal with current and upcoming imperfections

Reducing MOSFET 1/f Noise and Power Consumption by "Switched Biasing"

Switched biasing is proposed as a technique for reducing the 1/f noise in MOSFET's. Conventional techniques, such as chopping or correlated double sampling, reduce the effect of 1/f noise in electronic circuits, whereas the switched biasing technique reduces the 1/f noise itself. Whereas noise reduction techniques generally lead to more power consumption, switched biasing can reduce the power consumption. It exploits an intriguing physical effect: cycling a MOS transistor from strong inversion to accumulation reduces its intrinsic 1/f noise. As the 1/f noise is reduced at its physical roots, high frequency circuits, in which 1/f noise is being upconverted, can also benefit. This is demonstrated by applying switched biasing in a 0.8 ¿m CMOS sawtooth oscillator. By periodically switching off the bias currents, during time intervals that they are not contributing to the circuit operation, a reduction of the 1/f noise induced phase noise by more than 8 dB is achieved, while the power consumption is also reduced by 30

High linearity analog and mixed-signal integrated circuit design

Linearity is one of the most important specifications in electrical circuits.;In Chapter 1, a ladder-based transconductance networks has been adopted first time to build a low distortion analog filters for low frequency applications. This new technique eliminated the limitation of the application with the traditional passive resistors for low frequency applications. Based on the understanding of this relationship, a strategy for designing high linear analog continuous-time filters has been developed. According to our strategy, a prototype analog integrated filter has been designed and fabricated with AMI05 0.5 um standard CMOS process. Experimental results proved this technique has the ability to provide excellent linearity with very limited active area.;In Chapter 2, the relationships between the transconductance networks and major circuit specifications have been explored. The analysis reveals the trade off between the silicon area saved by the transconductance networks and the some other important specifications such as linearity, noise level and the process variations of the overall circuit. Experimental results of discrete component circuit matched very well with our analytical outcomes to predict the change of linearity and noise performance associated with different transconductance networks.;The Chapter 3 contains the analysis and mathematical proves of the optimum passive area allocations for several most popular analog active filters. Because the total area is now manageable by the technique introduced in the Chapter 1, the further reduce of the total area will be very important and useful for efficient utilizing the silicon area, especially with the today\u27s fast growing area efficiency of the highly density digital circuits. This study presents the mathematical conclusion that the minimum passive area will be achieved with the equalized resistor and capacitor.;In the Chapter 4, a well recognized and highly honored current division circuit has been studied. Although it was claimed to be inherently linear and there are over 60 published works reported with high linearity based on this technique, our study discovered that this current division circuit can achieve, if proper circuit condition being managed, very limited linearity and all the experimental verified performance actually based on more general circuit principle. Besides its limitation, however, we invented a novel current division digital to analog converter (DAC) based on this technique. Benefiting from the simple circuit structure and moderate good linearity, a prototype 8-bit DAC was designed in TSMC018 0.2 um CMOS process and the post layout simulations exhibited the good linearity with very low power consumption and extreme small active area.;As the part of study of the output stage for the current division DAC discussed in the Chapter 4, a current mirror is expected to amplify the output current to drive the low resistive load. The strategy of achieving the optimum bandwidth of the cascode current mirror with fixed total current gain is discussed in the Chapter 5.;Improving the linearity of pipeline ADC has been the hottest and hardest topic in solid-state circuit community for decade. In the Chapter 6, a comprehensive study focus on the existing calibration algorithms for pipeline ADCs is presented. The benefits and limitations of different calibration algorithms have been discussed. Based on the understanding of those reported works, a new model-based calibration is delivered. The simulation results demonstrate that the model-based algorithms are vulnerable to the model accuracy and this weakness is very hard to be removed. From there, we predict the future developments of calibration algorithms that can break the linearity limitations for pipelined ADC. (Abstract shortened by UMI.

Low-Noise Energy-Efficient Sensor Interface Circuits

Today, the Internet of Things (IoT) refers to a concept of connecting any devices on network where environmental data around us is collected by sensors and shared across platforms. The IoT devices often have small form factors and limited battery capacity; they call for low-power, low-noise sensor interface circuits to achieve high resolution and long battery life. This dissertation focuses on CMOS sensor interface circuit techniques for a MEMS capacitive pressure sensor, thermopile array, and capacitive microphone. Ambient pressure is measured in the form of capacitance. This work propose two capacitance-to-digital converters (CDC): a dual-slope CDC employs an energy efficient charge subtraction and dual comparator scheme; an incremental zoom-in CDC largely reduces oversampling ratio by using 9b zoom-in SAR, significantly improving conversion energy. An infrared gesture recognition system-on-chip is then proposed. A hand emits infrared radiation, and it forms an image on a thermopile array. The signal is amplified by a low-noise instrumentation chopper amplifier, filtered by a low-power 30Hz LPF to remove out-band noise including the chopper frequency and its harmonics, and digitized by an ADC. Finally, a motion history image based DSP analyzes the waveform to detect specific hand gestures. Lastly, a microphone preamplifier represents one key challenge in enabling voice interfaces, which are expected to play a dominant role in future IoT devices. A newly proposed switched-bias preamplifier uses switched-MOSFET to reduce 1/f noise inherently.PHDElectrical EngineeringUniversity of Michigan, Horace H. Rackham School of Graduate Studieshttps://deepblue.lib.umich.edu/bitstream/2027.42/137061/1/chaseoh_1.pd

Analog Circuits in Ultra-Deep-Submicron CMOS

Modern and future ultra-deep-submicron (UDSM) technologies introduce several new problems in analog design. Nonlinear output conductance in combination with reduced voltage gain pose limits in linearity of (feedback) circuits. Gate-leakage mismatch exceeds conventional matching tolerances. Increasing area does not improve matching any more, except if higher power consumption is accepted or if active cancellation techniques are used. Another issue is the drop in supply voltages. Operating critical parts at higher supply voltages by exploiting combinations of thin- and thick-oxide transistors can solve this problem. Composite transistors are presented to solve this problem in a practical way. Practical rules of thumb based on measurements are derived for the above phenomena

Reconfigurable Receiver Front-Ends for Advanced Telecommunication Technologies

The exponential growth of converging technologies, including augmented reality, autonomous vehicles, machine-to-machine and machine-to-human interactions, biomedical and environmental sensory systems, and artificial intelligence, is driving the need for robust infrastructural systems capable of handling vast data volumes between end users and service providers. This demand has prompted a significant evolution in wireless communication, with 5G and subsequent generations requiring exponentially improved spectral and energy efficiency compared to their predecessors. Achieving this entails intricate strategies such as advanced digital modulations, broader channel bandwidths, complex spectrum sharing, and carrier aggregation scenarios. A particularly challenging aspect arises in the form of non-contiguous aggregation of up to six carrier components across the frequency range 1 (FR1). This necessitates receiver front-ends to effectively reject out-of-band (OOB) interferences while maintaining high-performance in-band (IB) operation. Reconfigurability becomes pivotal in such dynamic environments, where frequency resource allocation, signal strength, and interference levels continuously change. Software-defined radios (SDRs) and cognitive radios (CRs) emerge as solutions, with direct RF-sampling receivers offering a suitable architecture in which the frequency translation is entirely performed in digital domain to avoid analog mixing issues. Moreover, direct RF- sampling receivers facilitate spectrum observation, which is crucial to identify free zones, and detect interferences. Acoustic and distributed filters offer impressive dynamic range and sharp roll off characteristics, but their bulkiness and lack of electronic adjustment capabilities limit their practicality. Active filters, on the other hand, present opportunities for integration in advanced CMOS technology, addressing size constraints and providing versatile programmability. However, concerns about power consumption, noise generation, and linearity in active filters require careful consideration.This thesis primarily focuses on the design and implementation of a low-voltage, low-power RFFE tailored for direct sampling receivers in 5G FR1 applications. The RFFE consists of a balun low-noise amplifier (LNA), a Q-enhanced filter, and a programmable gain amplifier (PGA). The balun-LNA employs noise cancellation, current reuse, and gm boosting for wideband gain and input impedance matching. Leveraging FD-SOI technology allows for programmable gain and linearity via body biasing. The LNA's operational state ranges between high-performance and high-tolerance modes, which are apt for sensitivityand blocking tests, respectively. The Q-enhanced filter adopts noise-cancelling, current-reuse, and programmable Gm-cells to realize a fourth-order response using two resonators. The fourth-order filter response is achieved by subtracting the individual response of these resonators. Compared to cascaded and magnetically coupled fourth-order filters, this technique maintains the large dynamic range of second-order resonators. Fabricated in 22-nm FD-SOI technology, the RFFE achieves 1%-40% fractional bandwidth (FBW) adjustability from 1.7 GHz to 6.4 GHz, 4.6 dB noise figure (NF) and an OOB third-order intermodulation intercept point (IIP3) of 22 dBm. Furthermore, concerning the implementation uncertainties and potential variations of temperature and supply voltage, design margins have been considered and a hybrid calibration scheme is introduced. A combination of on-chip and off-chip calibration based on noise response is employed to effectively adjust the quality factors, Gm-cells, and resonance frequencies, ensuring desired bandpass response. To optimize and accelerate the calibration process, a reinforcement learning (RL) agent is used.Anticipating future trends, the concept of the Q-enhanced filter extends to a multiple-mode filter for 6G upper mid-band applications. Covering the frequency range from 8 to 20 GHz, this RFFE can be configured as a fourth-order dual-band filter, two bandpass filters (BPFs) with an OOB notch, or a BPF with an IB notch. In cognitive radios, the filter’s transmission zeros can be positioned with respect to the carrier frequencies of interfering signals to yield over 50 dB blocker rejection