Fabrication technology for high light-extraction ultraviolet thin-film flip-chip (UV TFFC) LEDs grown on SiC

The light output of deep ultraviolet (UV-C) AlGaN light-emitting diodes (LEDs) is limited due to their poor light extraction efficiency (LEE). To improve the LEE of AlGaN LEDs, we developed a fabrication technology to process AlGaN LEDs grown on SiC into thin-film flip-chip LEDs (TFFC LEDs) with high LEE. This process transfers the AlGaN LED epi onto a new substrate by wafer-to-wafer bonding, and by removing the absorbing SiC substrate with a highly selective SF6 plasma etch that stops at the AlN buffer layer. We optimized the inductively coupled plasma (ICP) SF6 etch parameters to develop a substrate-removal process with high reliability and precise epitaxial control, without creating micromasking defects or degrading the health of the plasma etching system. The SiC etch rate by SF6 plasma was ~46 \mu m/hr at a high RF bias (400 W), and ~7 \mu m/hr at a low RF bias (49 W) with very high etch selectivity between SiC and AlN. The high SF6 etch selectivity between SiC and AlN was essential for removing the SiC substrate and exposing a pristine, smooth AlN surface. We demonstrated the epi-transfer process by fabricating high light extraction TFFC LEDs from AlGaN LEDs grown on SiC. To further enhance the light extraction, the exposed N-face AlN was anisotropically etched in dilute KOH. The LEE of the AlGaN LED improved by ~3X after KOH roughening at room temperature. This AlGaN TFFC LED process establishes a viable path to high external quantum efficiency (EQE) and power conversion efficiency (PCE) UV-C LEDs.Comment: 22 pages, 6 figures. (accepted in Semiconductor Science and Technology, SST-105156.R1 2018

The Role Of Photonics In Energy

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)In celebration of the 2015 International Year of Light, we highlight major breakthroughs in photonics for energy conversion and conservation. The section on energy conversion discusses the role of light in solar light harvesting for electrical and thermal power generation; chemical energy conversion and fuel generation; as well as photonic sensors for energy applications. The section on energy conservation focuses on solid-state lighting, flat-panel displays, and optical communications and interconnects. (C) The Authors. Published by SPIE under a Creative Commons Attribution 3.0 Unported License. Distribution or reproduction of this work in whole or in part requires full attribution of the original publication, including its DOI.5Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)U.S. National Science Foundation [DMR-1309459, ECCS 1408051, DMR 1505122]U.S. Office of Naval ResearchEngineering and Physical Sciences Research Council of the UK [EP/K00042X, EP/L012294]European Research Council of the European Union [321305]Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP

A Review of Solid State White Light Emitting Diode and Its Potentials for Replacing Conventional Lighting Technologies in Developing Countries

Lighting is an indispensable energy end use of man. A significant number people in developing countries live without electric lighting and depend on oil-based lamps. Globally, lighting consumes substantial amount of energy and is a major contributor to green house emissions. Conventional electric lighting systems such as incandescent lamps are highly inefficient and waste energy while the fluorescent/CFL lamps contain toxic chemicals like mercury. Incandescent lamps with short lifespan as well as the fluorescent/CFL lamps pose environmental waste disposal problems (e.g.). The use of renewable energy resource such as solar and wind power systems for example as sources of power for the most efficient and long life lighting source such as high-brightness light emitting diodes (LEDs) (also known as solid state lighting) would reduce global energy consumption for lighting by half, with corresponding reduction in green house emissions. In developing countries solar powered solid state lighting (SPSSL) would ensure access to electric lighting by the disperse population who may not be connected to the national grid in the near feature. In this article we elaborately review the upcoming solid state lighting technology. The physics and principles of operation of LEDs are also reviewed. The impact of this new lighting technology on developing countries in the areas of commerce, education, health and environmental impacts in comparison to conventional lighting technologies is the main thrust of this review

Light-Emitting Diodes in the Solid-State Lighting Systems

Red and green light-emitting diodes (LEDs) had been produced for several decades before blue emitting diodes, suitable for lighting applications, were widely available. Today, we have the possibility of combining the three fundamental colours to have a bright white light. And therefore, a new form of lighting, the solid-state lighting, has now become a reality. Here we discuss LEDs and some of their applications in displays and lamps

Atomic-Scale Insights into Light Emitting Diode

In solid-state lightning, GaN-based vertical LED technology has attracted tremendous attention because its luminous efficacy has surpassed the traditional lightning technologies, even the 2014 Nobel Prize in Physics was awarded for the invention of efficient blue LEDs, which enabled eco-friendly and energy-saving white lighting sources. Despite today’s GaN-based blue VLEDs can produce IQE of 90% and EQE of 70-80%, still there exist a major challenge of efficiency droop. Nonetheless, state-of-the-art material characterization and failure analysis tools are inevitable to address that issue. In this context, although LEDs have been characterized by different microscopy techniques, they are still limited to either its semiconductor or active layer, which mainly contributes towards the IQE. This is also one of the reason that today’s LEDs IQE exceeded above 80% but EQE of 70-80% remains. Therefore, to scrutinize the efficiency droop issue, this work focused on developing a novel strategy to investigate key layers of the LED structure, which play the critical role in enhancing the EQE = IQE x LEE factors. Based on that strategy, wafer bonding, reflection, GaN-Ag interface, MQWs and top-textured layers have been systematically investigated under the powerful advanced microscopy techniques of SEM-based TKD/EDX/EBSD, AC-STEM, AFM, Raman spectroscopy, XRD, and PL. Further, based on these correlative microscopy results, optimization suggestions are given for performance enhancement in the LEDs. The objective of this doctoral research is to perform atomic-scale characterization on the VLED layers/interfaces to scrutinize their surface topography, grain morphology, chemical composition, interfacial diffusion, atomic structure and carrier localization mechanism in quest of efficiency droop and reliability issues. The outcome of this research advances in understanding LED device physics, which will facilitate standardization in its design for better smart optoelectronics products

Graphene and other Two-dimensional Materials in Nanoelectronics and Optoelectronics

Graphene is probably the most fascinating material discovered in this century. A group of 2D materials can be called graphene derivatives, and these have attracted tremendous interest. This includes materials that are one or a few atoms thick. They have outstanding optical/electrical properties, and, most importantly, they are flat and thin—they can be processed with existing semiconductor technologies. Therefore, they have great potential in nanoelectronics and optoelectronics, playing a revolutionary role in these fields via their integration with other bulk materials. Of course, there are still challenges, such as large-scale production, as well as the mechanical transfer of these atomically thin sheets. These are the fields where scientists are now actively doing research. In this book, some leading scientists in the area share their most recent results on the material growth, device physics/processing, and system integration of 2D materials and devices. This book can serve as a starting point for young students to get familiar with the field, and should also be valuable to established device physicists and engineers who would like to explore the potential applications of 2D materials in electronics

The 2020 UV emitter roadmap

Solid state UV emitters have many advantages over conventional UV sources. The (Al,In,Ga)N material system is best suited to produce LEDs and laser diodes from 400 nm down to 210 nm—due to its large and tuneable direct band gap, n- and p-doping capability up to the largest bandgap material AlN and a growth and fabrication technology compatible with the current visible InGaN-based LED production. However AlGaN based UV-emitters still suffer from numerous challenges compared to their visible counterparts that become most obvious by consideration of their light output power, operation voltage and long term stability. Most of these challenges are related to the large bandgap of the materials. However, the development since the first realization of UV electroluminescence in the 1970s shows that an improvement in understanding and technology allows the performance of UV emitters to be pushed far beyond the current state. One example is the very recent realization of edge emitting laser diodes emitting in the UVC at 271.8 nm and in the UVB spectral range at 298 nm. This roadmap summarizes the current state of the art for the most important aspects of UV emitters, their challenges and provides an outlook for future developments

Thin-film flip-chip UVB LEDs realized by electrochemical etching

We demonstrate a thin-film flip-chip (TFFC) light-emitting diode (LED) emitting in the ultraviolet B (UVB) at 311 nm, where substrate removal has been achieved by electrochemical etching of a sacrificial Al0.37Ga0.63N layer. The electroluminescence spectrum of the TFFC LED corresponds well to the as-grown LED structure, showing no sign of degradation of structural and optical properties by electrochemical etching. This is achieved by a proper epitaxial design of the sacrificial layer and the etch stop layers in relation to the LED structure and the electrochemical etch conditions. Enabling a TFFC UV LED is an important step toward improving the light extraction efficiency that limits the power conversion efficiency in AlGaN-based LEDs

Design, fabrication and characterization of III-nitride PN junction devices

Design, fabrication and characterization of III-Nitride pn junction devices Jae Boum Limb 94 pages Directed by Dr. Russell D. Dupuis This dissertation describes an investigation of three types of III-nitride (AlInGaN) based p-n junction devices that were grown by metalorganic chemical vapor deposition (MOCVD). The three types of devices are Ultra-Violet (UV) avalanche photodiodes (APDs), green light emitting diodes (LEDs), and p-i-n rectifiers. For avalanche photodiodes, a material growth on low-dislocation density GaN substrates, processed with low-damage etching receipes and high quality dielectric passivations, were proposed. Using this technology, GaN APDs with optical gains greater than 3000, and AlGaN APDs showing true avalanche gains have been demonstrated. For green LEDs, the use of InGaN:Mg as the p-layer, rather than employing the conventional GaN:Mg has been proposed. Green LEDs with p-InGaN have shown higher emission intensities and lower diode series resistances compared to LEDs with p-GaN. Using p-InGaN layers, LEDs emitting at green and longer wavelengths have been realized. For p-i-n rectifiers, design, fabrication and characterization of device structures using the conventional mesa-etch configuration, as well as the full-vertical method have been proposed. High breakdown devices with low on-resistances have been achieved. Specific details on device structures, fabrication methods, and characterization results are discussed.Ph.D.Committee Chair: Russell Dupuis; Committee Member: David Citrin; Committee Member: Joy Laskar; Committee Member: Srinivas Garimella; Committee Member: William Doolittl