A 0.2pJ/conversion-step 6-bit 200MHz flash ADC with redundancy

Comunicación presentada al "27th Conference on Design of Circuits and Integrated Systems (DCIS 2012)" celebrada del 28 al 30 de Noviembre del 2012 en Avignon (Francia), organizada por el LIRMM laboratory of Montpellier: http://www.lirmm.fr/dcis2012/index.phpIn this paper, a 200MHz 6-bit Flash analog-to-digital converter (ADC) is presented. The principal objective is to obtain a digital-friendly converter. Hence, small and simple latched comparators are used and redundancy allows reducing the offset down to an acceptable level. This obviously requires calibration but reduces power consumption, since small size transistors can be used and the unused comparators are powered down. The proposed ADC is designed in UMC 0:18m CMOS technology. Full electrical simulations show that the ADC reaches an effective number of bits (ENOB) of 5.3 associated to a signal-to-noise-anddistortion ratio (SNDR) is 33dB. The converter consumes only 1.56mW and has figure-of-merit (FoM) of 0.2 pJ / conversion step.This work has been partially funded by the Junta de Andalucia project P09-TIC-5386, the Ministerio de Economia y Competitividad project TEC2011-28302, both of them cofinanced by the FEDER program.Peer Reviewe

Design and Implementation of a Novel Flash ADC for Ultra Wide Band Applications

This dissertation presents a design and implementation of a novel flash ADC architecture for ultra wide band applications. The advancement in wireless technology takes us in to a world without wires. Most of the wireless communication systems use digital signal processing to transmit as well as receive the information. The real world signals are analog. Due to the processing complexity of the analog signal, it is converted to digital form so that processing becomes easier. The development in the digital signal processor field is rapid due to the advancement in the integrated circuit technology over the last decade. Therefore, analog-to -digital converter acts as an interface in between analog signal and digital signal processing systems. The continuous speed enhancement of the wireless communication systems brings out huge demands in speed and power specifications of high-speed low-resolution analog-to -digital converters. Even though wired technology is a primary mode of communication, the quality and efficiency of the wireless technology allows us to apply to biomedical applications, in home services and even to radar applications. These applications are highly relying on wireless technology to send and receive information at high speed with great accuracy. Ultra Wideband (UWB) technology is the best method to these applications. A UWB signal has a bandwidth of minimum 500MHz or a fractional bandwidth of 25 percentage of its centre frequency. The two different technology standards that are used in UWB are multiband orthogonal frequency division multiplexing ultra wideband technology (MB-OFDM) and carrier free direct sequence ultra wideband technology (DS-UWB). ADC is the core of any UWB receiver. Generally a high speed flash ADC is used in DS-UWB receiver. Two different flash ADC architectures are proposed in this thesis for DS-UWB applications. The first design is a high speed five bit flash ADC architecture with a sampling rate of 5 GS/s. The design is verified using CADENCE tool with CMOS 90 nm technology. The total power dissipation of the ADC is 8.381 mW from power supply of 1.2 V. The die area of the proposed flash ADC is 186 μm × 210 μm (0.039 mm2). The proposed flash ADC is analysed and compared with other papers in the literature having same resolution and it is concluded that it has the highest speed of operation with medium power dissipation. iii The second design is a reconfigurable five bit flash ADC architecture with a sampling rate of 1.25 GS/s. The design is verified using CADENCE tool with UMC 180 nm technology. The total power dissipation of the ADC is 11.71 mW from power supply of 1.8 V. The die area of the implementation is 432 μm × 720 μm (0.31104 mm2). The chip tape out of the proposed reconfigurable flash ADC is made for fabrication

A Novel Compressing Analog-to-Digital Converter

Analog-to-digital converters form the backbone of many real world systems. A compression and expansion (companding) capability is a useful tool to increase the signal-to-noise ratio of many of these applications. Frequently, power-signal systems utilize analog compression to simplify signal processing. A novel compressing high-speed converter is presented in this thesis. The converter described here has a natural compressing transfer function of f(x)=1-1/x. The converter is a variation on Flash conversion, so it is high speed, with a sampling frequency of 80MHz. A four bit implementation of this converter was manufactured on a 0.5μm CMOS process with an area of 0.018mm2. The power consumed was 50mW on a first pass design. The compressing converter will to scale with process improvements. The converter desensitizes the linear region to reference mismatch, and arbitrary compressing transfer functions can be obtained

A 1Gsample/s 6-bit flash A/D converter with a combined chopping and averaging technique for reduced distortion in 0.18(mu)m CMOS

Hard disk drive applications require a high Spurious Free Dynamic Range (SFDR), 6-bit Analog-to-Digital Converter (ADC) at conversion rates of 1GHz and beyond. This work proposes a robust, fault-tolerant scheme to achieve high SFDR in an av- eraging flash A/D converter using comparator chopping. Chopping of comparators in a flash A/D converter was never previously implemented due to lack of feasibility in implementing multiple, uncorrelated, high speed random number generators. This work proposes a novel array of uncorrelated truly binary random number generators working at 1GHz to chop all comparators. Chopping randomizes the residual offset left after averaging, further pushing the dynamic range of the converter. This enables higher accuracy and lower bit-error rate for high speed disk-drive read channels. Power consumption and area are reduced because of the relaxed design requirements for the same linearity. The technique has been verified in Matlab simulations for a 6-bit 1Gsamples/s flash ADC under case of process gradients with non-zero mean offsets as high as 60mV and potentially serious spot offset errors as high as 1V for a 2V peak to peak input signal. The proposed technique exhibits an improvement of over 15dB compared to pure averaging flash converters for all cases. The circuit-level simulation results, for a 1V peak to peak input signal, demon- strate superior performance. The reported ADC was fabricated in TSMC 0.18 ??mCMOS process. It occupies 8.79mm2 and consumes about 400mW from 1.8V power supply at 1GHz. The targeted SFDR performance for the fabricated chip is at least 45dB for a 256MHz input sine wave, sampled at 1GHz, about 10dB improvement on the 6-bit flash ADCs in the literature

An high-speed parametric ADC and a co-designed mixer for CMOS RF receivers

Dissertação apresentada na faculdade de Ciências e Tecnologia da Universidade Nova de Lisboa para a obtenção do grau de Mestre em Engenharia Electrotécnica e de ComputadoresThe rapid growth of wireless communications and the massive use of wireless end-user equipments have created a demand for low-cost, low-power and low-area devices with tight specifications imposed by standards. The advances in CMOS technology allows, nowadays, designers to implement circuits that work at high-frequencies, thus, allowing the complete implementation of RF front ends in a single chip. In this work, a co-design strategy for the implementation of a fully integrated CMOS receiver for use in the ISM band is presented. The main focus is given to the Mixer and the ADC blocks of the presented architecture. The traditional approach used in RF design requires 50 matching buffers and networks and AC coupling capacitors between Mixer inputs and LNA and LO outputs. The codesign strategy avoids the use of DC choke inductors for Mixer biasing, because it is possible to use the DC level from the output of the LNA and the LO to provide bias to the Mixer. Moreover, since the entire circuit is in the same chip and the Mixer inputs are transistors gates, we should consider voltage instead of power and avoid the 50 matching networks. The proposed ADC architecture relies on a 4-bit flash converter. The main goals are to achieve low-power and high sampling frequency. To meet these goals, parametric amplification based on MOS varactors is applied to reduce the offset voltage of the comparators, avoiding the traditional and power-consuming approach of active pre-amplification gain stages

High-Speed Analog-to-Digital Converters for Broadband Applications

Flash Analog-to-Digital Converters (ADCs), targeting optical communication standards, have been reported in SiGe BiCMOS technology. CMOS implementation of such designs faces two challenges. The first is to achieve a high sampling speed, given the lower gain-bandwidth (lower ft) of CMOS technology. The second challenge is to handle the wide bandwidth of the input signal with a certain accuracy. Although the first problem can be relaxed by using the time-interleaved architecture, the second problem remains as a main obstacle to CMOS implementation. As a result, the feasibility of the CMOS implementation of ADCs for such applications, or other wide band applications, depends primarily on achieving a very small input capacitance (large bandwidth) at the desired accuracy. In the flash architecture, the input capacitance is traded off for the achievable accuracy. This tradeoff becomes tighter with technology scaling. An effective way to ease this tradeoff is to use resistive offset averaging. This permits the use of smaller area transistors, leading to a reduction in the ADC input capacitance. In addition, interpolation can be used to decrease the input capacitance of flash ADCs. In an interpolating architecture, the number of ADC input preamplifiers is reduced significantly, and a resistor network interpolates the missing zero-crossings needed for an N-bit conversion. The resistive network also averages out the preamplifiers offsets. Consequently, an interpolating network works also as an averaging network. The resistor network used for averaging or interpolation causes a systematic non-linearity at the ADC transfer characteristics edges. The common solution to this problem is to extend the preamplifiers array beyond the input signal voltage range by using dummy preamplifiers. However, this demands a corresponding extension of the flash ADC reference-voltage resistor ladder. Since the voltage headroom of the reference ladder is considered to be a main bottleneck in the implementation of flash ADCs in deep-submicron technologies with reduced supply voltage, extending the reference voltage beyond the input voltage range is highly undesirable. The principal objective of this thesis is to develop a new circuit technique to enhance the bandwidth-accuracy product of flash ADCs. Thus, first, a rigorous analysis of flash ADC architectures accuracy-bandwidth tradeoff is presented. It is demonstrated that the interpolating architecture achieves a superior accuracy compared to that of a full flash architecture for the same input capacitance, and hence would lead to a higher bandwidth-accuracy product, especially in deep-submicron technologies that use low power supplies. Also, the gain obtained, when interpolation is employed, is quantified. In addition, the limitations of a previous claim, which suggests that an interpolating architecture is equivalent to an averaging full flash architecture that trades off accuracy for the input capacitance, is presented. Secondly, a termination technique for the averaging/interpolation network of flash ADC preamplifiers is devised. The proposed technique maintains the linearity of the ADC at the transfer characteristics edges and cancels out the over-range voltage, consumed by the dummy preamplifiers. This makes flash ADCs more amenable for integration in deep-submicron CMOS technologies. In addition, the elimination of this over-range voltage allows a larger least-significant bit. As a result, a higher input referred offset is tolerated, and a significant reductions in the ADC input capacitance and power dissipation are achieved at the same accuracy. Unlike a previous solution, the proposed technique does not introduce negative transconductance at flash ADC preamplifiers array edges. As a result, the offset averaging technique can be used efficiently. To prove the resulting saving in the ADC input capacitance and power dissipation that is attained by the proposed termination technique, a 6-bit 1.6-GS/s flash ADC test chip is designed and implemented in 0.13-$\mu$m CMOS technology. The ADC consumes 180 mW from a 1.5-V supply and achieves a Signal-to-Noise-plus-Distortion Ratio (SNDR) of 34.5 dB and 30 dB at 50-MHz and 1450-MHz input signal frequency, respectively. The measured peak Integral-Non-Linearity (INL) and Differential-Non-Linearity (DNL) are 0.42 LSB and 0.49 LSB, respectively

Analysis and Design of High-Speed A/D Converters in SiGe Technology

Mixed-signal systems play a key role in modern communications and electronics. The quality of A/D and D/A conversions deeply affects what we see and what we hear in the real world video and radio. This dissertation deals with high-speed ADCs: a 5-bit 500-MSPS ADC and an 8-bit 2-GSPS ADC. These units can be applied in flat panel display, image enhancement and in high-speed data link. To achieve the state-of-the-art performance, we employed a 0.13-μm/2.5-V 210-GHz (unity-gain frequency) BiCMOS SiGe process for all the implementations. The circuit building blocks, such as the Track-and-Hold circuit (T/H) and the comparator, required by an ADC not only benefit from SiGe's superior ultra-high frequency properties but also by its power drive capability. The T/H described here achieved a dynamic performance of 8-bit accuracy at 2-GHz Nyquist rate with an input full scale range of 1 Vp-p. The T/H consumed 13 mW of power. The unique 4-in/2-out comparator was made of fully differential emitter couple pairs in order to operate at such a high frequency. Cascaded cross-coupled amplifier core was employed to reduce Miller effect and to avoid collector-emitter breakdown of the HBTs. We utilized the comparator interpolation technique between the preamplifer stages and the latches to reduce the total power dissipated by the comparator array. In addition, we developed an innovative D/A conversion and analog subtraction approach necessary for two-step conversion by using a bipolar pre-distortion technique. This innovation enabled us to decrease the design complexity in the subranging process of a two-step ADC. The 5-bit interpolating ADC operated at 2-GSPS achieved a differential nonlinearity (DNL) of 0.114 LSB and an integral nonlinearity (INL) of 0.076 LSB. The effective number of bits (ENOBs) are 4.3 bits at low frequency and 4.1 bits near Nyquist rate. The power dissipation was reduced more than half to 66.14 mW, with comparator interpolation. The 8-bit two-step interpolating ADC operated at 500-MSPS. It achieved a DNL of 0.33 LSB and an INL of 0.40 LSB with a power consumption of 172 mW. The ENOBs are 7.5 bits at low frequency and 6.9 bits near Nyquist rate